2018 4th IEEE International Conference on Emerging Electronics (ICEE)最新文献_第4页

Functionalized Silicon Nanoporous Membranes for Efficient Dialysis 用于高效透析的功能化硅纳米孔膜

2018 4th IEEE International Conference on Emerging Electronics (ICEE) Pub Date : 2018-12-01 DOI: 10.1109/icee44586.2018.8938002

Ananya Ghosh, Fidal V T, S. Sengupta, E. Bhattacharya

引用次数: 1

Thin EOT MoS2 FET for Efficient Photodetection and Gas Sensing 用于高效光电检测和气体传感的薄EOT MoS2场效应管

2018 4th IEEE International Conference on Emerging Electronics (ICEE) Pub Date : 2018-12-01 DOI: 10.1109/icee44586.2018.8937927

Kartikey Thakar, Abin Varghese, Sushovan Dhara, Sayantani Ghosh, S. Lodha

引用次数: 1

GaN Growth Process by MOCVD Revisited: TEM Study of Microstructural Evolution Presented 回顾了MOCVD生长GaN的过程:TEM研究了微观结构的演变

2018 4th IEEE International Conference on Emerging Electronics (ICEE) Pub Date : 2018-12-01 DOI: 10.1109/icee44586.2018.8937929

S. Saha, Krishna Yaddanapudi, K. Muraleedharan, S. Raghavan, D. Banerjee

{"title":"GaN Growth Process by MOCVD Revisited: TEM Study of Microstructural Evolution Presented","authors":"S. Saha, Krishna Yaddanapudi, K. Muraleedharan, S. Raghavan, D. Banerjee","doi":"10.1109/icee44586.2018.8937929","DOIUrl":"https://doi.org/10.1109/icee44586.2018.8937929","url":null,"abstract":"Microstructure evolution of GaN grown on c-sapphire by MOCVD has been systematically studied using transmission electron microscopy based techniques. Individual samples have been derived by interrupting the GaN growth at various steps, starting from nitridation at 530° C, followed by the standard two step growth comprising of first deposition of low temperature GaN nucleation layer (LT-GaN NL) and then ramping up the temperature followed by high temperature GaN epilayer growth. Effect of nitridation, and the microstructure of the nitride layer for various nitridation temperatures has been recently reported by our group [1], where we have shown that the nitride layer formed at this nitridation temperature is cubic spinel AlxOyNz. In this paper it will be shown, that the LT-GaN grown on this AlxOyNz (after nitridation at 530° C) is primarily cubic zinc blende (zb) in structure, with multiple twin variants existing about various {111} planes. Its crystallographic orientation relationships with the underlying nitride layer and the sapphire substrate will be shown. The transformation of LT-GaN and the regions of transformation from cubic zb phase to the wurtzite (w) phase during the annealing step will be presented. Subsequent effects on the GaN epilayer growth due to the microstructural evolution of these underlying layers along with the evolution of defects will also be discussed.","PeriodicalId":6590,"journal":{"name":"2018 4th IEEE International Conference on Emerging Electronics (ICEE)","volume":"26 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83152291","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Mapping of Bulk Diffusion Length and Effective Back Surface Recombination Velocity in Silicon Solar Cells 硅太阳能电池体扩散长度和有效后表面复合速度的映射

2018 4th IEEE International Conference on Emerging Electronics (ICEE) Pub Date : 2018-12-01 DOI: 10.1109/icee44586.2018.8937904

R. Jain, S. Behera, K. Sreejith, A. Kottantharayil, P. Basu, A. Sharma

{"title":"Mapping of Bulk Diffusion Length and Effective Back Surface Recombination Velocity in Silicon Solar Cells","authors":"R. Jain, S. Behera, K. Sreejith, A. Kottantharayil, P. Basu, A. Sharma","doi":"10.1109/icee44586.2018.8937904","DOIUrl":"https://doi.org/10.1109/icee44586.2018.8937904","url":null,"abstract":"Mapping of diffusion length (L) in the bulk region and effective back surface recombination velocity (SRV) in AI-BSF and PERC Si solar cells has been carried out by utilizing the spectral response (SR) at desired wavelengths. Light beam induced current (LBIC) technique was used to generate the maps of SR and reflectivity (R) on cell area (6” x6”). MATLAB tool was used to convert the spatial maps of SR and R into L and SRV. We found that (i) the distribution of L in multi-crystalline cells varied from grain to grain in wide range (150-600 $mu$m) while in mono-crystalline cells, it varied in rather narrow range (450-600$mu$m); (ii) the values of SRV for PERC cells (120-250 cm/sec for mono-crystalline and 100-250 cm/sec for multi-crystalline) and AI-BSF cells (320-400 cm/sec for mono-crystalline and 250-350 cm/sec for multi-crystalline) differ by considerable magnitude due to passivation quality at back side. Three multi-crystalline AI-BSF Si solar cells of cell efficiencies 17.6%, 17.9% and 18.1% were investigated with the proposed methodology and demonstrated that the efficiency deficit is primarily due to defects present in bulk material and poor back surface passivation.","PeriodicalId":6590,"journal":{"name":"2018 4th IEEE International Conference on Emerging Electronics (ICEE)","volume":"45 1","pages":"1-5"},"PeriodicalIF":0.0,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83844097","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 7

High-performance ultraviolet detector employing out-of-plane rGO/MoS2 PN heterostructure 采用面外rGO/MoS2 PN异质结构的高性能紫外探测器

2018 4th IEEE International Conference on Emerging Electronics (ICEE) Pub Date : 2018-12-01 DOI: 10.1109/icee44586.2018.8937993

Rahul Kumar, Neeraj Goel, R. Raliya, P. Biswas, Mahesh Kumar

引用次数: 0

A Simple Charge and Capacitance Compact Model for Asymmetric III-V DGFETs Using CCDA 基于CCDA的非对称III-V dgfet的简单电荷电容紧凑模型

2018 4th IEEE International Conference on Emerging Electronics (ICEE) Pub Date : 2018-12-01 DOI: 10.1109/ICEE44586.2018.8937952

Mohit D. Ganeriwala, G. M. Sarath Chandran, N. Mohapatra

引用次数: 0

Effect of Antisolvent Method on the Performance of HOIP based Memristive Devices 抗溶剂法对基于HOIP的记忆器件性能的影响

2018 4th IEEE International Conference on Emerging Electronics (ICEE) Pub Date : 2018-12-01 DOI: 10.1109/icee44586.2018.8937971

H. J. Gogoi, Ankur Solanki, A. T. Mallajosyula

引用次数: 0

Skyrmionic implementation of Spike Time Dependent Plasticity (STDP) enabled Spiking Neural Network (SNN) under supervised learning scheme 在监督学习方案下，Skyrmionic实现了峰值时间依赖可塑性(STDP)的峰值神经网络(SNN)

2018 4th IEEE International Conference on Emerging Electronics (ICEE) Pub Date : 2018-12-01 DOI: 10.1109/icee44586.2018.8937850

U. Sahu, Kushaagra Goyal, Utkarsh Saxena, T. Chavan, U. Ganguly, D. Bhowmik

{"title":"Skyrmionic implementation of Spike Time Dependent Plasticity (STDP) enabled Spiking Neural Network (SNN) under supervised learning scheme","authors":"U. Sahu, Kushaagra Goyal, Utkarsh Saxena, T. Chavan, U. Ganguly, D. Bhowmik","doi":"10.1109/icee44586.2018.8937850","DOIUrl":"https://doi.org/10.1109/icee44586.2018.8937850","url":null,"abstract":"Hardware implementation of Artificial Neural Network (ANN) algorithms, which are being currently used widely by the data sciences community, provides advantages of memory-computing intertwining, high speed and low energy dissipation which software implementation of the same does not have. In this paper, we simulate a spintronic hardware implementation of a third generation neural network - Spike Time Dependent Plasticity (STDP) learning enabled Spiking Neural Network (SNN), which is closer to functioning of the brain than most other ANN-s. Spin orbit torque driven skyrmionic device, driven by a transistor based circuit to enable STDP, is used as a synapse here. We use a combination of micromagnetic simulations, transistor circuit simulations and implementation of SNN algorithm in a numerical package to simulate our skyrmionic SNN. We train the skyrmionic SNN on different datasets under a supervised learning scheme and calculate the energy dissipated in updating the weights of the synapses in order to train the network.","PeriodicalId":6590,"journal":{"name":"2018 4th IEEE International Conference on Emerging Electronics (ICEE)","volume":"80 1","pages":"1-6"},"PeriodicalIF":0.0,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78393277","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Impact of Linear Intergranular Variation in Remnant Polarization on Negative Capacitance Field Effect Transistor 残余极化线性晶间变化对负电容场效应晶体管的影响

2018 4th IEEE International Conference on Emerging Electronics (ICEE) Pub Date : 2018-12-01 DOI: 10.1109/icee44586.2018.8937999

K. Qureshi, G. Pahwa, Y. Chauhan

{"title":"Impact of Linear Intergranular Variation in Remnant Polarization on Negative Capacitance Field Effect Transistor","authors":"K. Qureshi, G. Pahwa, Y. Chauhan","doi":"10.1109/icee44586.2018.8937999","DOIUrl":"https://doi.org/10.1109/icee44586.2018.8937999","url":null,"abstract":"We present an explicable study of the impact of variability in the remnant polarization (Pr) of the polycrystalline ferroelectric layer of a double gate (DG) NCFET. We analyze the impact of intergranular linear variance in Pr considering (i) source end as reference point and (ii) drain end as reference point with the percentage value advancing to the other end. The study evaluates the device performance at various ferroelectric thicknesses for both long as well as short gate lengths. The electrical characteristics exhibit different behaviour for low and high values of applied drain bias. While for low drain voltage, intuitive results are obtained, high drain voltage characteristics follow a distinct trend of subthreshold swing (SS) decreasing from its initially deteriorated value, as the magnitude of Pr variance decreases from source to drain, whereas the tendency is reversed moving from drain to source. Based on the results, we further conclude that in order to prevent the hysteric effects, the granular variation between the first and the last grain should not exceed 25% for long channel and 20% for short channel devices.","PeriodicalId":6590,"journal":{"name":"2018 4th IEEE International Conference on Emerging Electronics (ICEE)","volume":"61 1","pages":"1-5"},"PeriodicalIF":0.0,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73893084","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

The role of Na+, Zn2+ cations on the mechanical, thermal and moisture permeation behaviors of poly(vinyl butyral) based ionomeric films Na+、Zn2+阳离子对聚乙烯醇基离子膜力学、热、湿渗透性能的影响

2018 4th IEEE International Conference on Emerging Electronics (ICEE) Pub Date : 2018-12-01 DOI: 10.1109/icee44586.2018.8937908

S. Saravanan, Akshay Km, S. Kn, Praveen C Ramamurthy

{"title":"The role of Na+, Zn2+ cations on the mechanical, thermal and moisture permeation behaviors of poly(vinyl butyral) based ionomeric films","authors":"S. Saravanan, Akshay Km, S. Kn, Praveen C Ramamurthy","doi":"10.1109/icee44586.2018.8937908","DOIUrl":"https://doi.org/10.1109/icee44586.2018.8937908","url":null,"abstract":"In the present study, the inclusion of ionic moieties in the poly(vinyl butyral) matrix was accomplished by co-polymerizing butyraldehyde with poly(vinyl alcohol) and carboxy benzaldehyde in aqueous acidic medium. FT-IR and NMR spectroscopy results confirms the formation of acetal and butyral linkage in the polymer. Mechanical studies (both static and dynamic) of these ionomeric films show flexibility with ionic linkages up to 15 mol % acid neutralized with sodium and zinc ions. Zinc ionomers exhibit enhanced mechanical properties compared to sodium neutralized samples, because of its ionic size and ion-pair association within the multiplets. The moisture permeability studies accessed through calcium degradation test show the films with 15 mol % exhibit enhanced impermeability than other sodium ion neutralized films. The same trend was also observed for organic solar cells that are encapsulated with these films after exposure to external environment for 400 h. The water interaction with ionomer films was also evaluated at various temperatures and the results were presented based on the ionpair clustering and the steric hindrances in due of phenyl ring attachment to the base PVB matrix.","PeriodicalId":6590,"journal":{"name":"2018 4th IEEE International Conference on Emerging Electronics (ICEE)","volume":"114 1","pages":"1-6"},"PeriodicalIF":0.0,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79216020","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0