2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC)最新文献_第4页

Soiling measurement station to evaluate anti-soiling properties of PV module coatings 污污测量站，用于评估光伏组件涂层的防污性能

2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC) Pub Date : 2016-06-05 DOI: 10.1109/PVSC.2016.7750242

M. Gostein, B. Stueve, B. Brophy, Ki-yul Jung, A. Martinez-Morales, Shu Zhang, Yeyi Jin, Jianmei Xu

引用次数: 16

Cross-linkable styrene-functionalized fullerenes as electron-selective contacts for robust and efficient perovskite solar cells 交联苯乙烯功能化富勒烯作为稳健高效的钙钛矿太阳能电池的电子选择触点

2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC) Pub Date : 2016-06-05 DOI: 10.1109/PVSC.2016.7749722

Brian L. Watson, Nicholas Rolston, Kevin A. Bush, T. Leijtens, M. McGehee, R. Dauskardt

引用次数: 0

A programmable solar simulator for realistic seasonal, diurnal, and air-mass testing of multi-junction concentrator photovoltaics 一个可编程的太阳模拟器，用于多结聚光光伏的真实季节，昼夜和空气质量测试

2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC) Pub Date : 2016-06-05 DOI: 10.1109/PVSC.2016.7750054

T. Dennis, C. Yasanayake, T. Gerke, A. Payne, L. Eng, Brent Fisher, M. Meitl

引用次数: 6

Automatic fault classification of photovoltaic strings based on an in situ IV characterization system and a Gaussian process algorithm 基于原位IV表征系统和高斯过程算法的光伏串故障自动分类

2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC) Pub Date : 2016-06-05 DOI: 10.1109/PVSC.2016.7749915

C. B. Jones, M. Martínez‐Ramón, Ryan M. Smith, C. Carmignani, O. Lavrova, Charles D. Robinson, J. Stein

引用次数: 17

Using a multi-junction cell receiver as self-detector for spectrally-resolved optical efficiency measurement of concentrators 利用多结电池接收器作为自检测器进行光谱分辨聚光器光效率测量

2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC) Pub Date : 2016-06-05 DOI: 10.1109/PVSC.2016.7750055

C. Domínguez, M. Victoria, Valentín Pérez, S. Askins, R. Herrero, I. Antón, G. Sala

引用次数: 0

Improving module temperature measurements using averaging resistive temperature devices 使用平均电阻温度器件改进模块温度测量

2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC) Pub Date : 2016-06-05 DOI: 10.1109/PVSC.2016.7750243

N. Guay, Clifford W. Hansen, Charles D. Robinson, B. King

引用次数: 3

Novel InAs/GaAs QD subcell design for radiation hard 3-J ELO IMM solar cell 辐射硬3-J ELO IMM太阳能电池的新型InAs/GaAs量子点亚电池设计

2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC) Pub Date : 2016-06-05 DOI: 10.1109/PVSC.2016.7750302

Z. Bittner, M. Slocum, G. Nelson, R. Tatavarti, S. Hubbard

{"title":"Novel InAs/GaAs QD subcell design for radiation hard 3-J ELO IMM solar cell","authors":"Z. Bittner, M. Slocum, G. Nelson, R. Tatavarti, S. Hubbard","doi":"10.1109/PVSC.2016.7750302","DOIUrl":"https://doi.org/10.1109/PVSC.2016.7750302","url":null,"abstract":"InAs/GaAs quantum dots (QDs) have been investigated as a potential method of engineering the bandgap of the middle junction in triple junction solar cells to better match current generation and radiation tolerance to that of the InGaP top cell. While it is possible to successfully include QDs without inducing middle junction voltage degradation, they can lead to a slight reduction of minority carrier diffusion lengths in films grown after the QDs. Switching to an inverted metamorphic structure allows for the top cell to be grown first, but leads to challenges in maintaining current collection in the middle junction. In this work, a novel InAs/GaAs QD middle junction cell design is proposed for improving the efficiency of triple junction inverted metamorphic solar cells. Conventionally designed thin emitter devices as well as the proposed thick emitter devices were grown with and without InAs QDs in the uid region of the middle junction. The conventionally designed QDSC exhibited 1.8% relative increase in Jsc over the control device with no loss in VoC resulting in a 1.8% relative increase in efficiency over the control device.","PeriodicalId":6524,"journal":{"name":"2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2016-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76567556","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

22.13% Efficient industrial p-type mono PERC solar cell 22.13%高效工业p型单PERC太阳能电池

2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC) Pub Date : 2016-06-05 DOI: 10.1109/PVSC.2016.7750289

F. Ye, W. Deng, Wangwu Guo, Ruimin Liu, Daming Chen, Yifeng Chen, Yang Yang, N. Yuan, Jianning Ding, Zhiqiang Feng, P. Altermatt, P. Verlinden

引用次数: 38

First-principles calculations of Na and K impurities in CuInSe2 and their effect on Cd incorporation CuInSe2中Na和K杂质的第一性原理计算及其对Cd掺入的影响

2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC) Pub Date : 2016-06-05 DOI: 10.1109/PVSC.2016.7750041

David E. Sommer, D. Mutter, S. Dunham

引用次数: 1

Admittance spectroscopy analysis on the interfacial defect levels in the surface-activated bonding of GaAs 砷化镓表面活化键合中界面缺陷水平的导纳光谱分析

2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC) Pub Date : 2016-06-05 DOI: 10.1109/PVSC.2016.7750051

Daiji Yamashita, Kentaroh Watanabe, M. Fujino, T. Hoshii, Y. Okada, Y. Nakano, T. Suga, M. Sugiyama

{"title":"Admittance spectroscopy analysis on the interfacial defect levels in the surface-activated bonding of GaAs","authors":"Daiji Yamashita, Kentaroh Watanabe, M. Fujino, T. Hoshii, Y. Okada, Y. Nakano, T. Suga, M. Sugiyama","doi":"10.1109/PVSC.2016.7750051","DOIUrl":"https://doi.org/10.1109/PVSC.2016.7750051","url":null,"abstract":"Room-temperature surface-activated wafer bonding between bare III-V semiconductor surfaces has become a key technology for high-efficiency multi-junction solar cells, where the reduction of interfacial electrical resistance is of crucial importance for achieving highest efficiency. In the bonding process, surface cleaning using fast atom beam (FAB) of noble gas elements is vital for successful bonding but it damages the surface, resulting in numerous crystal defects at the bonded interface and increases electrical resistance. We here developed quantitative evaluation of such defects introduced by FAB treatment. The surface of n-GaAs was treated with the FAB using Ne, Ar and Kr, and Au Schottky electrodes were formed on the surfaces. Capacitance of a Schottky diode as a function of both probe frequency and DC bias allowed us to characterize both energy depth of the defects and their density profile along the physical depth from the GaAs surface. The results indicated that atoms with the smaller diameter generate high-density defects to the deeper region from the surface. When the defect density exceeding the doping level of GaAs spreads to wider than 5 nm, significant Schottky characteristics appears in the interfacial current-voltage characteristics, as suggested by simulations. Such a tendency was semi-quantitatively in good agreement with the measured current-voltage characteristics of the n-GaAs/n-GaAs bonded interfaces treated with the FAB of Ne, Ar and Kr, suggesting that the capacitance analysis of the FAB-treated surface provides us a direction for optimizing the surface- activated bonding process using FAB.","PeriodicalId":6524,"journal":{"name":"2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2016-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83114151","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0