2013 IEEE 39th Photovoltaic Specialists Conference (PVSC)最新文献_第8页

Diffusion activation energy of cadmium in thin film CuInGaSe2 镉在CuInGaSe2薄膜中的扩散活化能

2013 IEEE 39th Photovoltaic Specialists Conference (PVSC) Pub Date : 2013-06-16 DOI: 10.1109/PVSC.2013.6744499

N. Biderman, S. Novak, T. Laursen, R. Matyi, R. Sundaramoorthy, Gary Dufresne, J. Wax, M. Gardner, D. Fobare, D. Metacarpa, P. Haldar, J. Lloyd

引用次数: 2

Progress towards 14% efficient CdTe solar cells in substrate configuration 衬底结构中14%效率CdTe太阳能电池的进展

2013 IEEE 39th Photovoltaic Specialists Conference (PVSC) Pub Date : 2013-06-16 DOI: 10.1109/PVSC.2013.6744460

L. Kranz, R. Schmitt, C. Gretener, J. Perrenoud, F. Pianezzi, A. Uhl, D. Keller, S. Buecheler, A. Tiwari

引用次数: 9

Comparative study of stress inducing layers to produce kerfless thin wafers by the Slim-cut technique 薄切法生产无角薄晶圆的应力诱导层的比较研究

2013 IEEE 39th Photovoltaic Specialists Conference (PVSC) Pub Date : 2013-06-16 DOI: 10.1109/PVSC.2013.6744124

J. Serra, P. Bellanger, K. Lobato, R. Martini, M. Debucquoy, J. Poortmans

{"title":"Comparative study of stress inducing layers to produce kerfless thin wafers by the Slim-cut technique","authors":"J. Serra, P. Bellanger, K. Lobato, R. Martini, M. Debucquoy, J. Poortmans","doi":"10.1109/PVSC.2013.6744124","DOIUrl":"https://doi.org/10.1109/PVSC.2013.6744124","url":null,"abstract":"The decrease in wafer thickness seen as a route to cost reductions has raised a growing interest in techniques that allow the preparation of thin wafers without kerf loss. The Slim-cut process [1] is one of these new techniques and comprises mainly three stages: a stress layer deposition step on the top of a monocrystalline silicon sample, a heating step necessary to induce the stress on the silicon sample and detach a thin silicon layer, and a third step to clean the stress-inducing layer to obtain a silicon foil adapted to the fabrication of solar cells. One of the major problems of this technology consists in finding a stress layer that induces a sufficiently high contraction in order to achieve a rupture of the silicon without contamination of the foil. In this work we present a comparison between thin foils obtained by Slim-cut, using three different stress layers: i) a double screen printed Silver/Aluminum layer, ii) a dispensed epoxy paste, iii) an electrodeposited Nickel metallization. Results on lifetime measurements indicate that some of the stress layers, although capable of inducing large stress, severely degrade lifetime of the foil.","PeriodicalId":6350,"journal":{"name":"2013 IEEE 39th Photovoltaic Specialists Conference (PVSC)","volume":"1 1","pages":"0177-0180"},"PeriodicalIF":0.0,"publicationDate":"2013-06-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90869072","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 5

Using broad-band irradiance data to model the short circuit response of aSi modules 利用宽带辐照度数据模拟aSi模块的短路响应

2013 IEEE 39th Photovoltaic Specialists Conference (PVSC) Pub Date : 2013-06-16 DOI: 10.4229/28thEUPVSEC2013-5BV.4.37

H. Beyer, T. O. Saetre, G. Yordanov

引用次数: 4

A puzzling solar cell structure: An exercise to get insight on intermediate band solar cells 一个令人困惑的太阳能电池结构:一项深入了解中间波段太阳能电池的练习

2013 IEEE 39th Photovoltaic Specialists Conference (PVSC) Pub Date : 2013-06-16 DOI: 10.1109/PVSC.2013.6744325

A. Martí, E. Antolín, P. García‐Linares, I. Ramiro, E. López, I. Tobías, A. Luque

引用次数: 5

Design and performance evaluation of building integrated PVT and heat pump water heating (BIPVT/HPWH) system 建筑PVT/HPWH一体化供热系统设计与性能评价

2013 IEEE 39th Photovoltaic Specialists Conference (PVSC) Pub Date : 2013-06-16 DOI: 10.1109/PVSC.2013.6744272

Huan-Liang Tsai, C. Hsu, Chao-Yia Yang

引用次数: 2

Fluorinated wastewater abatement method and clean production in crystalline silicon photovoltaic manufacturing 晶体硅光伏制造中氟化废水治理方法及清洁生产

2013 IEEE 39th Photovoltaic Specialists Conference (PVSC) Pub Date : 2013-06-16 DOI: 10.1109/PVSC.2013.6744958

Zhang Jia, Lv Fang, L. Hailing, W. Wenjing, Liu Xiuqiong, Ma Liyun

{"title":"Fluorinated wastewater abatement method and clean production in crystalline silicon photovoltaic manufacturing","authors":"Zhang Jia, Lv Fang, L. Hailing, W. Wenjing, Liu Xiuqiong, Ma Liyun","doi":"10.1109/PVSC.2013.6744958","DOIUrl":"https://doi.org/10.1109/PVSC.2013.6744958","url":null,"abstract":"Fluoride emissions have strict rules to supervise for its poison to the human and environment. HF is used by the photovoltaic manufacturing industry in 3 manufacturing sections including high-purity polysilicon, silicon wafer and PV cell & module, which will generate fluoride waste. This paper focused on the fluoride emission in the waste water and the clean production of crystalline PV manufacturing. The fluoride generation processes and abatement method in the waste water, as well as the clean production of 3 manufacturing sections in crystalline PV manufacturing were analyzed. Abatement system is needed to remove the fluoride (F-) generated by PV production and after treatment, the fluoride won't cause the water environmental problems. In high-purity polysilicon and wafer manufacturing, the fluoride emission amount depended on the manufacturing technique level and raw silicon material quality. Clean production is very important for the PV manufacturing development, which can make the PV industry double green. The research can lay the foundation for the environmental impact assessment and management of photovoltaic manufacturing industry in China.","PeriodicalId":6350,"journal":{"name":"2013 IEEE 39th Photovoltaic Specialists Conference (PVSC)","volume":"17 1","pages":"2399-2403"},"PeriodicalIF":0.0,"publicationDate":"2013-06-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78509837","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

In-situ stage development for high-temperature X-ray nanocharacterization of defects in solar cells 太阳能电池中高温x射线纳米缺陷的原位阶段开发

2013 IEEE 39th Photovoltaic Specialists Conference (PVSC) Pub Date : 2013-06-16 DOI: 10.1109/PVSC.2013.6744404

S. Gangam, A. Jeffries, D. Fenning, B. Lai, J. Maser, T. Buonassisi, C. Honsberg, M. Bertoni

{"title":"In-situ stage development for high-temperature X-ray nanocharacterization of defects in solar cells","authors":"S. Gangam, A. Jeffries, D. Fenning, B. Lai, J. Maser, T. Buonassisi, C. Honsberg, M. Bertoni","doi":"10.1109/PVSC.2013.6744404","DOIUrl":"https://doi.org/10.1109/PVSC.2013.6744404","url":null,"abstract":"The vast majority of photovoltaic materials are highly sensitive to the presence of inhomogeneously distributed nanoscale defects, which commonly regulate the overall performance of the devices. The defects can take the form of impurities, stoichiometry variations, microstructural misalignments, and secondary phases - the majority of which are created during solar cell processing. Scientific understanding of these defects and development of defect-engineering techniques have the potential to significantly increase cell efficiencies, as well as provide a science-based approach to increase the competitiveness for the US PV industry on a dollar per installed kWh criterion. For the case of Cu(In, Ga)Se2 devices for example, the theoretically limit sits at 30.5% efficiency [1], thus, surpassing DOE's SunShot goals for cost-competitive solar power. However, to date, CIGS laboratory scale cells have been reported to achieve only 20.3% efficiencies and modules have not crossed the 15 % certified efficiency barrier. Recent reports have suggested that these record cells are limited by non-ideal recombination and, more specifically, by an increased saturation current that seems to originate from the particular defect chemistry at structural defects. In order to understand the severe efficiency limitations that currently affect solar cell materials, it is necessary to understand in detail the role of defects and their interactions under actual operating and processing conditions. In this work we propose to develop a high-temperature, in-situ stage for X-ray microscopes, with the capabilities of temperature and ambient control. Here, we provide insight into the design and preliminary testing at the Advanced Photon Source with beam sizes ≈100nm.","PeriodicalId":6350,"journal":{"name":"2013 IEEE 39th Photovoltaic Specialists Conference (PVSC)","volume":"6 1","pages":"1394-1395"},"PeriodicalIF":0.0,"publicationDate":"2013-06-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78582543","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Effect of c-Si doping density on heterojunction with intrinsic thin layer (HIT) radial junction solar cells c-Si掺杂密度对本征薄层(HIT)径向结太阳能电池异质结的影响

2013 IEEE 39th Photovoltaic Specialists Conference (PVSC) Pub Date : 2013-06-16 DOI: 10.1109/PVSC.2013.6744975

Haoting Shen, Yu A. Yuwen, Xin Wang, J. I. Ramírez, Yuanyuan Li, Y. Ke, C. Kendrick, N. Podraza, T. Jackson, E. Dickey, T. Mayer, J. Redwing

引用次数: 4

Utility scale PV plant variability and energy storage for ramp rate control 公用事业规模的光伏电站可变性和斜坡速率控制的能量存储

2013 IEEE 39th Photovoltaic Specialists Conference (PVSC) Pub Date : 2013-06-16 DOI: 10.1109/PVSC.2013.6744304

R. van Haaren, M. Morjaria, V. Fthenakis

引用次数: 8