电路与系统(英文) Pub Date : 2023-01-01 DOI: 10.4236/cs.2023.145001

Mussa Elsaadi, Rema Hamad

引用次数: 0

Dual-Delay-Path Ring Oscillator with Self-Biased Delay Cells for Clock Generation 时钟产生用自偏置延迟单元的双延迟路径环形振荡器

电路与系统(英文) Pub Date : 2023-01-01 DOI: 10.4236/cs.2023.146003

Agord de Matos Pinto Jr, Raphael Ronald Noal Souza, Mateus Biancarde Castro, Eduardo Rodrigues de Lima, Leandro Tiago Manêra

引用次数: 0

Behavioral Model of Molecular Gap-Type Atomic Switches and Its SPICE Integration 分子间隙型原子开关的行为模型及其SPICE集成

电路与系统(英文) Pub Date : 2022-01-01 DOI: 10.4236/cs.2022.131001

H. Kubota, T. Hasegawa, M. Akai‐Kasaya, T. Asai

引用次数: 0

Ultrasound Needle Guidance System for Precision Vaccinations and Drug Deliver 用于精确疫苗接种和药物输送的超声针导向系统

电路与系统(英文) Pub Date : 2021-03-31 DOI: 10.4236/CS.2021.121001

S. Aslan, Mahbubur Rahman, Sourav Das, B. Schnitta

{"title":"Ultrasound Needle Guidance System for Precision Vaccinations and Drug Deliver","authors":"S. Aslan, Mahbubur Rahman, Sourav Das, B. Schnitta","doi":"10.4236/CS.2021.121001","DOIUrl":"https://doi.org/10.4236/CS.2021.121001","url":null,"abstract":"Image-guided \u0000needles are currently used for drug delivery in bodies, but the additional time \u0000associated with aligning and maintaining the needle’s position results in increased patient discomfort \u0000or risk of invasion of the human body. In this paper, a needle guidance system \u0000using piezoelectric materials is designed and analyzed for precise drug \u0000delivery without damaging parts of the body and improving processing time. A \u0000piezoelectric generates an ultrasound wave that can propagate through different \u0000mediums, and a second piezoelectric crystal can receive that energy and convert \u0000it into voltage. A 1D real-time image represents the changes of the voltage \u0000induced in the double piezoelectric crystal. Extensive data analysis and \u0000visualization are done using different obstacles and location of the needle \u0000verified for other mediums. The presence of obstacles in between those crystals \u0000can be identified in the real-time grayscale image. The needle can reach its \u0000destination using this image information as directional guidance. This guided \u0000drug delivery improves patient recovery time and eliminates extra injuries that \u0000can be caused due to wrong needle injections, such as lumbar puncture-related \u0000nerve damage.","PeriodicalId":63422,"journal":{"name":"电路与系统(英文)","volume":"12 1","pages":"1-12"},"PeriodicalIF":0.0,"publicationDate":"2021-03-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"42044971","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Drafting an Electrostatic Charge Control Plan for a Large Scale Scientific Instrument: Guidelines and a Case Study 大型科学仪器静电电荷控制方案的制定：指导原则和案例研究

电路与系统(英文) Pub Date : 2021-03-28 DOI: 10.4236/cs.2021.123003

C. Oliver, O. Martínez, S. Ronda, J. M. Miranda

{"title":"Drafting an Electrostatic Charge Control Plan for a Large Scale Scientific Instrument: Guidelines and a Case Study","authors":"C. Oliver, O. Martínez, S. Ronda, J. M. Miranda","doi":"10.4236/cs.2021.123003","DOIUrl":"https://doi.org/10.4236/cs.2021.123003","url":null,"abstract":"Large-scale scientific instruments strongly support top-level research all around the world. Besides their intrinsic merits, they often play a valuable role as pathfinders for developing and testing instrumentation and as training grounds for young researchers. Strategies and roadmaps for these facilities have become a priority for a number of private and public funding organizations. Despite the large amount of mature work done in the industrial arena, it is difficult to find documents providing clear and concise orientation on how to prevent or minimize the damage caused by electrostatic discharges (ESD) in research infrastructure. This paper aims to gather all this information to develop a static charge control plan for a large-scale scientific facility. The specific case of the static charge control plan for the installation of CTA-LST telescopes is added as an example and verification of the actual applicability of the measures proposed in this document, providing static charge in human body monitoring measurements. Specific tests performed on equipment with ESD sensitive components are also described, which helped to assess any possible damage.","PeriodicalId":63422,"journal":{"name":"电路与系统(英文)","volume":"1 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2021-03-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"44944291","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Modeling of Waveguide Filter Using Wave Concept Iterative Procedure 基于波概念迭代法的波导滤波器建模

电路与系统(英文) Pub Date : 2021-01-01 DOI: 10.4236/CS.2021.122002

A. Sassi, N. Sboui, A. Gharbi, H. Baudrand

引用次数: 1

Physical Parameter Variation Analysis on the Performance Characteristics of Nano DG-MOSFETs 纳米dg - mosfet性能特性物理参数变化分析

电路与系统(英文) Pub Date : 2021-01-01 DOI: 10.4236/cs.2021.124004

Yashu Swami, Sanjeev Rai

{"title":"Physical Parameter Variation Analysis on the Performance Characteristics of Nano DG-MOSFETs","authors":"Yashu Swami, Sanjeev Rai","doi":"10.4236/cs.2021.124004","DOIUrl":"https://doi.org/10.4236/cs.2021.124004","url":null,"abstract":"DG-MOSFETs are the most widely explored device architectures for na-no-scale CMOS circuit design in sub-50 nm due to the improved subthreshold slope and the reduced leakage power compared to bulk MOSFETs. In thin-film (t si < 10 nm) DG-MOS structures, charge carriers are affected by t si induced quantum confinement along with the confinement caused by a very high electric field at the interface. Therefore, quantum confinement effects on the device characteristics are also quite important and it needs to be incorporated along with short channel effects for nano-scale circuit design. In this paper, we analyzed a DG-MOSFET structure at the 20 nm technology node incorporating quantum confinement effects and various short channel effects. The effect of physical parameter variations on performance characteristics of the device such as threshold voltage, subthreshold slope, I ON - I OFF ratio, DIBL, etc. has been investigated and plotted through extensive TCAD simulations. The physical parameters considered in this paper are operating temperature (T op ), channel doping concentration (N c ), gate oxide thickness (t ox ) and Silicon film thickness (t si ). It was observed that quantum confinement of charge carriers significantly affected the performance characteristics (mostly the subthreshold characteristics) of the device and therefore, it cannot be ignored in the subthreshold region-based circuit design like in many previous research works. The ATLAS TM device simulator has been used in this paper to perform simulation and parameter extraction. The TCAD analysis presented in the manuscript can be incorporated for device modeling and device matching. It can be used to illustrate exact device behavior and for proper device control.","PeriodicalId":63422,"journal":{"name":"电路与系统(英文)","volume":"1 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2021-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"70481994","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 3

Noise Reduction for Digital Communications—The Masterpiece, a Modified Costas Loop 数字通信降噪——改进的科斯塔斯环路的杰作

电路与系统(英文) Pub Date : 2020-06-28 DOI: 10.4236/cs.2020.116006

Janos Ladvanszky

引用次数: 1

Tunable Floating Resistor Based on Current Inverting Differential Input Transconductance Amplifier 基于电流反向差分输入跨导放大器的可调谐浮动电阻器

电路与系统(英文) Pub Date : 2020-05-29 DOI: 10.4236/cs.2020.115005

Zainab Haseeb, D. Prasad, Mainuddin nbsp, M. W. Akram

引用次数: 0

CMOS Realization of VDVTA and OTA Based Fully Electronically Tunable First Order All Pass Filter with Optimum Linearity at Low Supply Voltage ± 0.85 V 低电压±0.85 V下基于VDVTA和OTA的线性度最佳全电子可调谐一阶全通滤波器的CMOS实现

电路与系统(英文) Pub Date : 2020-04-30 DOI: 10.4236/cs.2020.114004

G. Singh

引用次数: 5

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