Indian Journal of Physics最新文献

{"title":"Investigating the role of effective density of states on solar cells efficiency","authors":"Prabakaran Maruthamuthu Paramasivam,&nbsp;R. Thandaiah Prabu,&nbsp;Arun Kumar Selvam,&nbsp;Atul Kumar","doi":"10.1007/s12648-026-04063-y","DOIUrl":"10.1007/s12648-026-04063-y","url":null,"abstract":"<div><p>Optimal device architecture and material parameters are essential for achieving high device performance. In line with this, we have evaluated the impact of density of states on thin film solar cells. Numerical simulations highlighted that a lower density of state (DOS) results in low effective mass which is beneficial in terms of increased mobility. The simulated J-V characteristics of <i>p-n</i>⁺<i>-n</i>⁺⁺ configuration solar cells for various DOS values showed that efficiency and V_OC increases with decreasing DOS, whereas J_SC increases with increasing DOS. This is due to the fact that absorption increases with increasing DOS, while mobility increases with decreasing DOS. The study showed that the rise in V_OC at lower DOS is higher and dominant than the increases in J_SC at higher DOS. Thus, low DOS is one of the crucial requirements in absorber materials for high performance solar cells.Please confirm if the author names are presented accurately and in the correct sequence (given name, middle name/initial, family name). Author 1 Given name: [Prabakaran Maruthamuthu] Last name [Paramasivam], Author 2 Given name: [R. Thandaiah] Last name [Prabu], Author 3 Given name [Arun kumar] Last name [Selvam] Also, kindly confirm the details in the metadata are correct.All correct\u0000</p></div>","PeriodicalId":584,"journal":{"name":"Indian Journal of Physics","volume":"100 9","pages":"3767 - 3772"},"PeriodicalIF":1.7,"publicationDate":"2026-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148752320","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Modeling the biological implications of fractal and memory based fractional operators in type 2 diabetes mellitus with genetic/non-genetic indicators","authors":"Tarun Kashyap,&nbsp;Shayamli Dutt,&nbsp;Rakesh Kumar","doi":"10.1007/s12648-026-04046-z","DOIUrl":"10.1007/s12648-026-04046-z","url":null,"abstract":"<div><p>The integration of fractal properties and fractional calculus has emerged as a promising approach in biomedical modeling. This work proposes a fractal–fractional mathematical model to investigate the biological implications of memory and heterogeneity effects in the progression of type 2 diabetes mellitus. The framework incorporates both genetic and non-genetic indicators, thereby capturing heterogeneous pathways influencing the disease dynamics. The present study introduces a mathematical model designed to capture the dynamics of Type 2 diabetes mellitus. Initially, the biological relevance of the fractal–fractional model is ensured through the positivity and boundedness properties. The equilibrium states are also determined, the stability of each steady state is analyzed. Parameter estimation is performed to validate the model using real data from the United Kingdom, reflected with 0.000025789 as sum of squared errors and 0.983 as accuracy coefficient of determination. Sensitivity analysis is conducted to identify the key influencing parameters. Furthermore, the existence and uniqueness of solutions are established using the Banach contraction principle. To obtain numerical approximations, we employ Lagrange polynomials to compute the solutions effectively. Through graphical simulations, we analyze the impact of varying fractal and fractional orders on the system’s behaviour. It is observed that adopting a healthy diet and engaging in regular physical activity can effectively reduce the overall burden of diabetes in the population. The susceptible population declines more rapidly under the influence of non-genetic factors than genetic factors, suggesting a greater impact on the lifestyle-related risk of disease transmission.</p></div>","PeriodicalId":584,"journal":{"name":"Indian Journal of Physics","volume":"100 9","pages":"3795 - 3813"},"PeriodicalIF":1.7,"publicationDate":"2026-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148752317","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"The astrophysical S-factor for the 14N(p,γ)15O reaction: a Gaussian potential model study","authors":"Roshanak Ghorbani,&nbsp;Hassan Khalili,&nbsp;Amir Hossein Ansari,&nbsp;Shahla Nahidinezhad,&nbsp;Masoumeh Dalvand","doi":"10.1007/s12648-026-04050-3","DOIUrl":"10.1007/s12648-026-04050-3","url":null,"abstract":"<div><p>The ¹⁴N (<i>p, γ</i>)¹⁵O reaction is a very important reaction and plays a key role in the CNO cycle for determining the lifetime of stars. The main goal of this work is to calculate the astrophysical S-factor at low energies and accurately determine the reaction rate at high temperatures using the Gaussian potential model. In this work, we computed the cross section and the astrophysical S-factor for this reaction for E1 and E2 electric transitions from the ¹⁵O resonance at 8.2840MeV ± 0.5 keV to key excited states (5.18, 5.24, 6.18, 6.79, 6.86, and 7.28 MeV).The calculated S-factor values have been compared with previous theoretical and experimental studies, showing good agreement. The S(0) values for the mentioned transitions were also compared with other works and showed consistent results. The derived reaction rate agrees well with the NACRE compilation and other established datasets, validating the GPM (Gaussian potential model) as a reliable tool for astrophysical applications.</p></div>","PeriodicalId":584,"journal":{"name":"Indian Journal of Physics","volume":"100 9","pages":"3519 - 3529"},"PeriodicalIF":1.7,"publicationDate":"2026-05-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148752313","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A machine learning-based surrogate model for enhanced four-body charge exchange calculations in ion-atom collisions","authors":"Hoda Ghavaminia","doi":"10.1007/s12648-026-03972-2","DOIUrl":"10.1007/s12648-026-03972-2","url":null,"abstract":"<div><p>This study introduces a hybrid computational framework that integrates the quantum-mechanically rigorous Boundary-Corrected Four-Body Continuum-Intermediate-State (BCIS-4B) method with a deep neural network (DNN) to create a high-fidelity surrogate model for predicting electron capture cross-sections in ion-atom collisions. The model was trained on a curated dataset of 4820 theoretical data points, generated from both new BCIS-4B calculations and published results, covering a wide range of projectile energies (50–1000 keV) and scattering angles (0.1–3.5mrad). The DNN architecture, optimized through systematic hyper parameter tuning, demonstrates exceptional performance as a surrogate, achieving a coefficient of determination (R²) of 0.998 ± 0.001 on independent test data. When validated against experimental measurements, the hybrid BCIS-4B-ML model shows superior predictive accuracy compared to standard BCIS-4B and CB1-4B methods, particularly in the critical intermediate angular range where it reduces the mean absolute percentage error by up to 73.3%. Beyond accuracy enhancement, the surrogate model delivers a computational speedup of several orders of magnitude, enabling near-instantaneous cross-section predictions while bypassing the computationally expensive numerical integrations of the traditional quantum method. This work establishes a new paradigm for physics-informed surrogate modeling in atomic collision theory, providing both computational efficiency and enhanced physical insight into complex four-body charge transfer processes.</p></div>","PeriodicalId":584,"journal":{"name":"Indian Journal of Physics","volume":"100 6","pages":"2189 - 2197"},"PeriodicalIF":1.7,"publicationDate":"2026-05-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148281220","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Optical and transport attributes of lithium aluminum borate glasses doped with Tb2O3","authors":"J. Nagaraju,&nbsp;B. Eraiah","doi":"10.1007/s12648-026-04075-8","DOIUrl":"10.1007/s12648-026-04075-8","url":null,"abstract":"<div><p>The comprehensive analysis of optical, structural, and electrical properties of lithium aluminum borate glasses doped with Tb₂O₃ was carried out. Using the melt quenching method, glass samples were fabricated with varying Tb₂O₃ concentrations. Through XRD characterization, the produced glasses’ non-crystalline nature was verified. FTIR spectra analysis was used to identify functional groups. The optical band gaps were evaluated using absorption spectra, and the values vary from 3.37 to 3.033 eV. As Tb₂O₃ increased, the glass transition temperature declined, but the thermal stability parameter (ΔT) improved, according to differential thermal analysis. Dielectric properties were analyzed across a broad frequency range and at temperatures from 30 to 110°C using an impedance analyzer. Dielectric studies show the increased dielectric constant and loss with higher temperatures and also with Tb₂O₃ concentrations. The complex modulus analysis indicates a relaxation process and a transition from long-range to short-range ion mobility with increasing frequency. Our findings reveal that the addition of Tb₂O₃ decreases impedance values and increases AC conductivity. The results indicated that terbium-doped lithium aluminum borate glasses exhibit enhanced conductivity and dielectric properties, suggesting their suitability for advanced optoelectronic devices. The temperature-dependent activation energy increases with higher Tb₂O₃ content, further supporting their potential for high-performance photonic devices.</p></div>","PeriodicalId":584,"journal":{"name":"Indian Journal of Physics","volume":"100 10","pages":"4107 - 4123"},"PeriodicalIF":1.7,"publicationDate":"2026-05-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148909614","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Effect of urea doping on the structural, optical and second-order nonlinear optical properties of ADP crystals","authors":"H. P. Chatra,&nbsp;A. N. Prabhu,&nbsp;P. K. Shetty","doi":"10.1007/s12648-026-04056-x","DOIUrl":"10.1007/s12648-026-04056-x","url":null,"abstract":"<div><p>Ammonium dihydrogen phosphate (ADP) is an excellent inorganic nonlinear optical crystal used in different device applications. In the present study, pure and Urea doped ADP crystals were grown using a slow evaporation solution growth technique. The grown crystals have been subjected to various characterization studies such as powder X-ray diffraction, ultraviolet visible (UV Vis) spectroscopy, Fourier transform infrared (FTIR) spectroscopy, photoluminescence (PL) study and refractive index (R.I.) measurement. By using the powder X-ray diffraction technique, the structural characteristics of the pure and Urea-doped ADP crystals were identified. The crystallite size for pure ADP was found to be 104.9 nm, and it was reduced to 55. nm after doping with 10% Urea. The consequence of Urea on the optical transparency of ADP crystals was examined within 200–1100 nm by means of UV–vis spectral analysis. The direct band gap varied from 4.89 to 6.23 eV, and the indirect band gap varied from 4.21 to 5.87 eV. Additionally, a decrease in the value of the refractive index from 1.46 to 1.24 is observed for the doped ADP crystals. Fourier transform infrared (FTIR) studies confirm the presence of functional groups in the crystals. In the PL spectra, the intensity of blue emission is enhanced with increasing Urea concentration. The second harmonic generation (SHG) efficiency of 10 mol % Urea doped ADP is improved 1.21 times compared to the reference KDP compound. The second harmonic generation (SHG) efficiency of the ADP crystal was found to be decreased at higher concentrations of Urea doping.Please check and confirm that the authors and their respective affiliations have been correctly identified and amend if necessary.Checked. Authors and their respective affiliations are correct.</p></div>","PeriodicalId":584,"journal":{"name":"Indian Journal of Physics","volume":"100 9","pages":"3815 - 3823"},"PeriodicalIF":1.7,"publicationDate":"2026-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s12648-026-04056-x.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148752392","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Comparative study on the optoelectronic properties of multilayered thin film based on ITO/metal contact for transparent conducting applications","authors":"Abdelbaki Hacini,&nbsp;Ahmad Hadi Ali,&nbsp;Leila Harkat,&nbsp;Nurul Nadia Adnan","doi":"10.1007/s12648-026-04009-4","DOIUrl":"10.1007/s12648-026-04009-4","url":null,"abstract":"<div><p>This work used sputtering for the growth of single and multilayered thin films based on chromium, molybdenum, silver, and indium tin oxide. The thin film properties were compared at different structures, including a single layer, a bilayer (ITO/metal), three layers (ITO/metal/ITO), and four layers (ITO/metal–metal/ITO). The properties were examined using different techniques. Most of the materials show high transparency, particularly the samples with a lower thickness, which reached &gt; 85% in the visible range. The optical transmittance decreases with the augmentation of thickness and number of layers. ITO/Cr recorded the highest transmittance, which reached 95%. The grain size of all structures varied with thickness and number of layers, where every material has its own growth. The largest grain size was obtained by ITO, which is 46.03 nm. This is because the ITO atoms grow for a longer time, which produces a larger grain. Similarly to the electrical resistivity, which changed with every structure. While the four-layer structures show the lowest resistivity, including the ITO/Mo-Ag/ITO (7.2 × 10⁻⁴ Ω.cm), followed by the ITO/Cr–Ag/ITO (7.6 × 10⁻⁴ Ω.cm). The maximum figure of merit Φ_TC achieved was 1.69 × 10⁻³ Ω⁻¹ by IMAI, then 1.64 × 10⁻³ Ω⁻¹ by ICAI. Both structures, IMAI and ICAI, have suitable properties that can replace and reduce the amount of the ITO for transparent conducting applications. This research contributes to the development of transparent conducting materials for photovoltaic applications by minimising light reflections, electric contact losses, and the use of indium.</p></div>","PeriodicalId":584,"journal":{"name":"Indian Journal of Physics","volume":"100 8","pages":"3423 - 3436"},"PeriodicalIF":1.7,"publicationDate":"2026-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148433531","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Impact of Sn on structural, optical and electrical properties of CdO nanoparticles prepared by solid state reaction for optoelectronic applications","authors":"Arcot Jaswanth,&nbsp;Shaik Kaleemulla","doi":"10.1007/s12648-026-04066-9","DOIUrl":"10.1007/s12648-026-04066-9","url":null,"abstract":"<div><p>Pure and tin doped cadmium oxide (Cd_1-xSn_xO) nanoparticles at different Sn concentrations (x = 0, 0.03, 0.05, and 0.07) were prepared using simple, low-cost solid-state reaction and subjected to various characterization techniques. Cubic structure with polycrystalline nature was confirmed from X-ray diffraction profile. Furthermore, nanoparticles size, dislocation density, strain, interplanar spacing and lattice constant were also calculated from the XRD profile. Fourier-transform infrared (FT-IR) spectra were recorded for all the prepared nanoparticles in the energy range of 400–1400 cm⁻¹ and from this, the metal–oxygen (M–O) stretching vibrations were confirmed. Optical properties such as optical absorbance and reflectance spectra were recorded using UV–Vis-NIR spectrophotometer and found increase in reflectance with increase of tin (Sn) concentration. From this optical data, the optical band gap (E_g) of the nanoparticles was calculated using Tauc’s relation and it was observed that when Sn concentration increased from x = 0 to x = 0.07, the optical band gap also increased from 1.65 to 1.92 eV. The photoluminescence (PL) spectra were recorded in the wavelength range of 350–600 nm and a broad emission peak was observed at ~ 430 nm. The PL data was used for plotting the CIE graphs and that graphs indicated that the prepared nanoparticles are good fit for the blue-green light emitting diodes (LED). The electrical resistivity of the nanoparticles was calculated from current versus voltage (I-V) characteristics, and it decreased with Sn concentration.</p></div>","PeriodicalId":584,"journal":{"name":"Indian Journal of Physics","volume":"100 9","pages":"3949 - 3957"},"PeriodicalIF":1.7,"publicationDate":"2026-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148751836","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Mechanical properties of nano polystyrene (PS) fibers reinforced epoxy composites","authors":"Salma M. Hassan","doi":"10.1007/s12648-026-04059-8","DOIUrl":"10.1007/s12648-026-04059-8","url":null,"abstract":"<div><p>In this search, Polystyrene Nanofibers reinforced epoxy (NPS.Ep.) was presented, in addition to the mechanical properties involved (Shore D hardness, Bending Strength, Impact strength, and Density) were studied. PS Nano fibers with a diameter of 100 nm are used as a reinforcement phase and different volume fractions of PS Nanofibers between 30–60 wt. % were used for reinforced epoxy resin. Results of nanocomposites' density show a decrease with increasing the weight ratio of PS nanofibers in the nanocomposite. While the thermal characterization of the epoxy composites was carried out by using differential scanning calorimetry (DSC), the result of thermal analysis revealed that the addition of PS increased thermal stability. Results of Shore D Hardness also show an increase in hardness with increasing the weight ratio of PS Nanofibers in the nanocomposite, it increases from (40) of pure epoxy to (78) of epoxy with (60 wt. %) PS nanofibers. Another result is related to the bending test results, which show that the addition of the PSNFs can increase the bending strength of the pure substrate (Epoxy). Another group of characterizations included the impact test. We noticed that the addition of the PSNFs can increase the impact strength of the epoxy substrate. All the results show there is an improvement in the physical and mechanical properties of nanocomposites (NPS: Ep.), and the increase in fiber weight ratio led to further improvement in these properties. This study figured out that the composite material tested is acceptable for many applications because it enhances the mechanical properties, such as stiffness and strength, and lightweight characteristics for the composite, making it ideal for high–performance structural parts, such as replacing automobile interiors, particularly car dashboards.</p></div>","PeriodicalId":584,"journal":{"name":"Indian Journal of Physics","volume":"100 9","pages":"3697 - 3702"},"PeriodicalIF":1.7,"publicationDate":"2026-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148751746","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"First-principles DFT investigation of structural, electronic, optical, mechanical, and thermoelectric properties of VCoSn half-heusler compound","authors":"Shivani Shah,&nbsp;Karam Chand,&nbsp;Mitesh B. Solanki,&nbsp;Nisha Mahepal","doi":"10.1007/s12648-026-04053-0","DOIUrl":"10.1007/s12648-026-04053-0","url":null,"abstract":"<div><p>This study presents a comprehensive first-principles investigation of the VCoSn half-Heusler compound using density functional theory within the Quantum ESPRESSO framework, employing the Perdew-Burke-Ernzerhof generalized gradient approximation to model electron exchange–correlation effects in its cubic F-43 m structure. Structural optimization via the Broyden-Fletcher-Goldfarb-Shanno algorithm yields a lattice constant of approximately 5.9 Å, with phonon dispersion confirming dynamical stability by the absence of imaginary frequencies, akin to stable analogs such as TaCoSn. The electronic band structure reveals metallic behavior with no bandgap and a high density of states near the Fermi level, dominated by V and Co d-orbitals, drawing parallels to VFeSb. The complex Fermi surface exhibits anisotropic sheets with nesting features that enhance electron–phonon interactions. Optical properties, including dielectric function and absorption spectra, indicate potential for photonic applications, with strong responses in the visible range. Mechanical analysis uncovers elastic anisotropy, with bulk modulus ~ 140 GPa, shear modulus ~ 80 GPa, and Young’s modulus ~ 200 GPa, confirming ductility (Poisson’s ratio ~ 0.26) and robustness for stress-bearing uses, like HfNiSn. Thermoelectric transport properties, computed via BoltzTraP, show temperature-dependent electrical conductivity peaking at ~ 6 × 10²⁰ Ω⁻¹ m⁻¹ s⁻¹ at 800 K, asymmetric Seebeck coefficients up to ± 8 × 10^–5 V/K indicating n-type dominance, and power factors reaching ~ 1 × 10¹² W/m·K² s, alongside electronic thermal conductivity ~ 1 × 10¹⁶ W/m·K. The figure of merit (ZT) reaches a maximum of ~ 0.20 at low temperatures, then diminishes to ~ 0.10 at 800 K due to bipolar effects. Yet, low lattice thermal conductivity (~ 1–2 W/m·K) suggests promise for mid-temperature energy harvesting. These findings position VCoSn as a tunable material for thermoelectric devices, spintronics, and structural applications, suggesting doping (e.g., Nb) to optimize ZT. Limited experimental synthesis of VCoSn has been reported, yielding a lattice constant of ~ 5.95 Å and a low ZT ≈ 0.007, consistent with our computed lattice constant (~ 5.9 Å) and metallic character; however, phase purity remains challenging due to competing phases.</p></div>","PeriodicalId":584,"journal":{"name":"Indian Journal of Physics","volume":"100 9","pages":"3667 - 3686"},"PeriodicalIF":1.7,"publicationDate":"2026-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148751859","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}