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Informacije Midem-Journal of Microelectronics Electronic Components and Materials最新文献

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Multi-Objective Optimization Phase-Shift Control Strategy for Dual-Active-Bridge Isolated Bidirectional DC-DC Converter 双有源桥式隔离双向DC-DC变换器的多目标优化相移控制策略
IF 1.2 4区 工程技术
Informacije Midem-Journal of Microelectronics Electronic Components and Materials Pub Date : 2021-10-18 DOI: 10.33180/infmidem2021.303
{"title":"Multi-Objective Optimization Phase-Shift Control Strategy for Dual-Active-Bridge Isolated Bidirectional DC-DC Converter","authors":"","doi":"10.33180/infmidem2021.303","DOIUrl":"https://doi.org/10.33180/infmidem2021.303","url":null,"abstract":"","PeriodicalId":56293,"journal":{"name":"Informacije Midem-Journal of Microelectronics Electronic Components and Materials","volume":"26 1","pages":""},"PeriodicalIF":1.2,"publicationDate":"2021-10-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79008027","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Extended Bandwidth Method on Symmetrical Operational Transconductance Amplifier and Filter Application 扩展带宽方法在对称运算跨导放大器和滤波器中的应用
IF 1.2 4区 工程技术
Informacije Midem-Journal of Microelectronics Electronic Components and Materials Pub Date : 2021-07-13 DOI: 10.33180/infmidem2021.20
{"title":"Extended Bandwidth Method on Symmetrical Operational Transconductance Amplifier and Filter Application","authors":"","doi":"10.33180/infmidem2021.20","DOIUrl":"https://doi.org/10.33180/infmidem2021.20","url":null,"abstract":"","PeriodicalId":56293,"journal":{"name":"Informacije Midem-Journal of Microelectronics Electronic Components and Materials","volume":"9 19","pages":""},"PeriodicalIF":1.2,"publicationDate":"2021-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72489677","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Vector Controlled Delay Cell with Nearly Identical Rise/Fall Time for Processor Clock Application 具有几乎相同上升/下降时间的矢量控制延迟单元，用于处理器时钟应用
IF 1.2 4区 工程技术
Informacije Midem-Journal of Microelectronics Electronic Components and Materials Pub Date : 2021-07-13 DOI: 10.33180/infmidem2021.202
{"title":"Vector Controlled Delay Cell with Nearly Identical Rise/Fall Time for Processor Clock Application","authors":"","doi":"10.33180/infmidem2021.202","DOIUrl":"https://doi.org/10.33180/infmidem2021.202","url":null,"abstract":"","PeriodicalId":56293,"journal":{"name":"Informacije Midem-Journal of Microelectronics Electronic Components and Materials","volume":"80 1","pages":""},"PeriodicalIF":1.2,"publicationDate":"2021-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73969911","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The Implementation of Logic Gates Using Only Memristor Based Neuristor 仅使用基于忆阻器的神经电阻器实现逻辑门
IF 1.2 4区 工程技术
Informacije Midem-Journal of Microelectronics Electronic Components and Materials Pub Date : 2021-07-13 DOI: 10.33180/INFMIDEM2021.203
K. Orman, Yunus Babacan
{"title":"The Implementation of Logic Gates Using Only Memristor Based Neuristor","authors":"K. Orman, Yunus Babacan","doi":"10.33180/INFMIDEM2021.203","DOIUrl":"https://doi.org/10.33180/INFMIDEM2021.203","url":null,"abstract":"Memristor based neuron circuit can be found in literature to implement more effective circuits thanks to linearity, high density and low energy consumption properties. This paper presents two logic gates based on memristor based neuron. The neuron circuit has floating characteristics so it can be used as a circuit element. The electronic neuron, neuristor, produce spikes when applied DC current so designed logic gates produce spikes when applied appropriate inputs. All simulations are obtained successfully and implemented in SPICE environment with TSMC 0.18 μm CMOS process parameters.","PeriodicalId":56293,"journal":{"name":"Informacije Midem-Journal of Microelectronics Electronic Components and Materials","volume":"55 1","pages":""},"PeriodicalIF":1.2,"publicationDate":"2021-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89874650","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Extending Leeson’s Equation 李森方程的扩展
IF 1.2 4区 工程技术
Informacije Midem-Journal of Microelectronics Electronic Components and Materials Pub Date : 2021-07-13 DOI: 10.33180/INFMIDEM2021.205
M. Vidmar
{"title":"Extending Leeson’s Equation","authors":"M. Vidmar","doi":"10.33180/INFMIDEM2021.205","DOIUrl":"https://doi.org/10.33180/INFMIDEM2021.205","url":null,"abstract":"The oscillator phase noise is one of the key limitations in several fields of electronics. An electronic oscillator phase noise is usually described by the Leeson's equation. Since the latter is frequently misinterpreted and misused, a complete derivation of the Leeson's equation in modern form is given first. Second, effects of flicker noise and active-device bias are accounted for. Next the complete spectrum of an electronic oscillator is derived extending the result of the Leeson's equation into a Lorentzian spectral line. Finally the spectrum of more complex oscillators including delay lines is calculated, like opto-electronic oscillators.","PeriodicalId":56293,"journal":{"name":"Informacije Midem-Journal of Microelectronics Electronic Components and Materials","volume":"33 1","pages":""},"PeriodicalIF":1.2,"publicationDate":"2021-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78058753","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Low Power Area Optimum Configurable 160 to 2560 Subcarrier Orthogonal Frequency Division Multiplexing Modulator-Demodulator Architecture based on Systolic Array and Distributive Arithmetic Look-Up Table 基于收缩阵列和分配算法查找表的低功耗区域最优配置160 ~ 2560子载波正交频分复用调制器-解调器结构
IF 1.2 4区 工程技术
Informacije Midem-Journal of Microelectronics Electronic Components and Materials Pub Date : 2021-07-13 DOI: 10.33180/infmidem2021.204
{"title":"Low Power Area Optimum Configurable 160 to 2560 Subcarrier Orthogonal Frequency Division Multiplexing Modulator-Demodulator Architecture based on Systolic Array and Distributive Arithmetic Look-Up Table","authors":"","doi":"10.33180/infmidem2021.204","DOIUrl":"https://doi.org/10.33180/infmidem2021.204","url":null,"abstract":"","PeriodicalId":56293,"journal":{"name":"Informacije Midem-Journal of Microelectronics Electronic Components and Materials","volume":"50 1","pages":""},"PeriodicalIF":1.2,"publicationDate":"2021-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88339605","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Nanotechnology and Nanoscience – From Past Breakthroughs to Future Prospects 纳米技术和纳米科学-从过去的突破到未来的展望
IF 1.2 4区 工程技术
Informacije Midem-Journal of Microelectronics Electronic Components and Materials Pub Date : 2021-05-14 DOI: 10.33180/infmidem2021.102
Jernej Štremfelj, F. Smole
{"title":"Nanotechnology and Nanoscience – From Past Breakthroughs to Future Prospects","authors":"Jernej Štremfelj, F. Smole","doi":"10.33180/infmidem2021.102","DOIUrl":"https://doi.org/10.33180/infmidem2021.102","url":null,"abstract":"Nanoscience and nanotechnology represent an increasingly important part of our lives. Their achievements are already proving to be useful in everyday life, as well as in the fields of medicine, energetics, environmental protection, transport and electronics along with information technology. In this paper, the development of nanotechnology is presented through its major breakthroughs. A special section is reserved for the development in the field of microelectronics, which is facing numerous challenges, due to downsizing of devices to the nanometre level. Current situation in microelectronics industry and predictions for the next few years are presented. Furthermore, the use of nanotechnology and future prospects for all abovementioned fields are described. The last part of this paper is devoted to the field of electronics and information technology, where some potential nanotechnological solutions for the challenges of microelectronics are implied. The use of carbon nanotubes in logic circuits and memory applications is presented. The basic principle of single-electron transistor is also described. Basic concepts of the use of spintronics in magnetoresistive random access memory (MRAM) structures are explained. Memristor is also presented as an important future prospect. However, the review paper focuses only on positive effects of the use of nanotechnology, and thus does not discuss its possible negative impact on public health and environment.","PeriodicalId":56293,"journal":{"name":"Informacije Midem-Journal of Microelectronics Electronic Components and Materials","volume":"38 1","pages":""},"PeriodicalIF":1.2,"publicationDate":"2021-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78363045","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Low-Voltage Current Mirror for Transconductance Amplifiers 跨导放大器用低压电流反射镜
IF 1.2 4区 工程技术
Informacije Midem-Journal of Microelectronics Electronic Components and Materials Pub Date : 2021-05-14 DOI: 10.33180/infmidem2021.104
H. Ekmel Ercan, Sezai Alper Tekin
{"title":"A Low-Voltage Current Mirror for Transconductance Amplifiers","authors":"H. Ekmel Ercan, Sezai Alper Tekin","doi":"10.33180/infmidem2021.104","DOIUrl":"https://doi.org/10.33180/infmidem2021.104","url":null,"abstract":"In this study, a low-voltage current mirror to use in differential pair as an active load is introduced. The proposed current mirror which can operate at ±0.5 V has high output impedance and low input impedance. The proposed structure employs the principle of the voltage level-shifting for PMOS transistors. The voltage level-shifting operation has been achieved by using bulk voltage at this structure. Also, spice simulations justify the highly good performance of this current mirror with a bandwidth of 11 GHz by using external capacitor at input current of 200 μA.","PeriodicalId":56293,"journal":{"name":"Informacije Midem-Journal of Microelectronics Electronic Components and Materials","volume":"27 1","pages":""},"PeriodicalIF":1.2,"publicationDate":"2021-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74399331","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Effect of Dipole Position and Orientation on Light Extraction for Red OLEDs on Periodically Corrugated Substrate - FEM Simulations Study 偶极子位置和取向对周期性波纹衬底上红色oled光提取的影响-有限元模拟研究
IF 1.2 4区 工程技术
Informacije Midem-Journal of Microelectronics Electronic Components and Materials Pub Date : 2021-05-14 DOI: 10.33180/infmidem2021.105
M. Kovačič
{"title":"Effect of Dipole Position and Orientation on Light Extraction for Red OLEDs on Periodically Corrugated Substrate - FEM Simulations Study","authors":"M. Kovačič","doi":"10.33180/infmidem2021.105","DOIUrl":"https://doi.org/10.33180/infmidem2021.105","url":null,"abstract":"One of the main efficiency-limiting factors for organic light-emitting diodes (OLEDs) is poor light extraction, which typically reaches only 20% (in best cases up to 30%) in flat standard devices. Optical modeling and simulations play an important role in improving light extraction and optimizing outcoupling efficiency. Using FEM modeling approach, the effect of dipole positions and orientations for red OLEDs on periodically corrugated substrate is evaluated and used to enhance the outcoupling efficiency. It is shown that with only 3 carefully selected dipole positions, the outcoupling efficiency over the whole area can be predicted with very reasonable accuracy, which greatly reduces the number of simulations required. The presented modelling approach is used for optimization of the sine texture as a substrate corrugation structure. OLEDs with optimized simulated texture show a relative improvement of light outcoupling from the thin film stack to the substrate by more than 25% compared to the flat plane devices.","PeriodicalId":56293,"journal":{"name":"Informacije Midem-Journal of Microelectronics Electronic Components and Materials","volume":"16 1","pages":""},"PeriodicalIF":1.2,"publicationDate":"2021-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88247495","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Microfluidics: a review 微流体:综述
IF 1.2 4区 工程技术
Informacije Midem-Journal of Microelectronics Electronic Components and Materials Pub Date : 2021-05-14 DOI: 10.33180/infmidem2021.101
B. Pecar, D. Resnik, M. Mozek, D. Vrtacnik
{"title":"Microfluidics: a review","authors":"B. Pecar, D. Resnik, M. Mozek, D. Vrtacnik","doi":"10.33180/infmidem2021.101","DOIUrl":"https://doi.org/10.33180/infmidem2021.101","url":null,"abstract":"Microfluidics technologies have become a powerful tool in life science research laboratories over the past three decades. This review discusses three important segments of the field from origins and current status to future prospective: a) materials and microfabrication technologies from the field, b) research and development of essential microfluidic components and c) integration of components into complex microfluidic systems that will, according to some forecasts, play a key role in improving the quality of life for future generations. The most sophisticated microfluidic systems developed by now are Point-of-Care systems, that  are based on Lab-on-Chip technologies. As these subfields are very extensive and go beyond the scope of this review, some carefully chosen additional review papers are provided.","PeriodicalId":56293,"journal":{"name":"Informacije Midem-Journal of Microelectronics Electronic Components and Materials","volume":"13 1","pages":""},"PeriodicalIF":1.2,"publicationDate":"2021-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85787262","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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