仅使用基于忆阻器的神经电阻器实现逻辑门

IF 0.6 4区工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC

Informacije Midem-Journal of Microelectronics Electronic Components and Materials Pub Date : 2021-07-13 DOI:10.33180/INFMIDEM2021.203

K. Orman, Yunus Babacan

{"title":"仅使用基于忆阻器的神经电阻器实现逻辑门","authors":"K. Orman, Yunus Babacan","doi":"10.33180/INFMIDEM2021.203","DOIUrl":null,"url":null,"abstract":"Memristor based neuron circuit can be found in literature to implement more effective circuits thanks to linearity, high density and low energy consumption properties. This paper presents two logic gates based on memristor based neuron. The neuron circuit has floating characteristics so it can be used as a circuit element. The electronic neuron, neuristor, produce spikes when applied DC current so designed logic gates produce spikes when applied appropriate inputs. All simulations are obtained successfully and implemented in SPICE environment with TSMC 0.18 μm CMOS process parameters.","PeriodicalId":56293,"journal":{"name":"Informacije Midem-Journal of Microelectronics Electronic Components and Materials","volume":"55 1","pages":""},"PeriodicalIF":0.6000,"publicationDate":"2021-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"The Implementation of Logic Gates Using Only Memristor Based Neuristor\",\"authors\":\"K. Orman, Yunus Babacan\",\"doi\":\"10.33180/INFMIDEM2021.203\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Memristor based neuron circuit can be found in literature to implement more effective circuits thanks to linearity, high density and low energy consumption properties. This paper presents two logic gates based on memristor based neuron. The neuron circuit has floating characteristics so it can be used as a circuit element. The electronic neuron, neuristor, produce spikes when applied DC current so designed logic gates produce spikes when applied appropriate inputs. All simulations are obtained successfully and implemented in SPICE environment with TSMC 0.18 μm CMOS process parameters.\",\"PeriodicalId\":56293,\"journal\":{\"name\":\"Informacije Midem-Journal of Microelectronics Electronic Components and Materials\",\"volume\":\"55 1\",\"pages\":\"\"},\"PeriodicalIF\":0.6000,\"publicationDate\":\"2021-07-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Informacije Midem-Journal of Microelectronics Electronic Components and Materials\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://doi.org/10.33180/INFMIDEM2021.203\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Informacije Midem-Journal of Microelectronics Electronic Components and Materials","FirstCategoryId":"5","ListUrlMain":"https://doi.org/10.33180/INFMIDEM2021.203","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 2

摘要

文献中发现基于忆阻器的神经元电路由于其线性、高密度和低能耗的特性，可以实现更有效的电路。本文提出了两种基于忆阻器神经元的逻辑门。神经元电路具有浮动特性，因此可以用作电路元件。当施加直流电流时，电子神经元(神经电阻器)产生尖峰，因此设计的逻辑门在施加适当的输入时产生尖峰。所有仿真均获得成功，并在SPICE环境下以TSMC 0.18 μm CMOS工艺参数实现。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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The Implementation of Logic Gates Using Only Memristor Based Neuristor

Memristor based neuron circuit can be found in literature to implement more effective circuits thanks to linearity, high density and low energy consumption properties. This paper presents two logic gates based on memristor based neuron. The neuron circuit has floating characteristics so it can be used as a circuit element. The electronic neuron, neuristor, produce spikes when applied DC current so designed logic gates produce spikes when applied appropriate inputs. All simulations are obtained successfully and implemented in SPICE environment with TSMC 0.18 μm CMOS process parameters.

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来源期刊

Informacije Midem-Journal of Microelectronics Electronic Components and Materials 工程技术-材料科学：综合

CiteScore

1.80

自引率

0.00%

发文量

审稿时长

>12 weeks

期刊介绍： Informacije MIDEM publishes original research papers in the fields of microelectronics, electronic components and materials. Review papers are published upon invitation only. Scientific novelty and potential interest for a wider spectrum of readers is desired. Authors are encouraged to provide as much detail as possible for others to be able to replicate their results. Therefore, there is no page limit, provided that the text is concise and comprehensive, and any data that does not fit within a classical manuscript can be added as supplementary material. Topics of interest include: Microelectronics, Semiconductor devices, Nanotechnology, Electronic circuits and devices, Electronic sensors and actuators, Microelectromechanical systems (MEMS), Medical electronics, Bioelectronics, Power electronics, Embedded system electronics, System control electronics, Signal processing, Microwave and millimetre-wave techniques, Wireless and optical communications, Antenna technology, Optoelectronics, Photovoltaics, Ceramic materials for electronic devices, Thick and thin film materials for electronic devices.