Qihang Qiu, Li Deng, Xiang Yin, Yuntian Bai, Xianmin Zhang
{"title":"Piezovalley and piezoelectric altermagnetism in a 2D Ti<sub>2</sub>ClIO semiconductor.","authors":"Qihang Qiu, Li Deng, Xiang Yin, Yuntian Bai, Xianmin Zhang","doi":"10.1088/1361-648X/aeb05b","DOIUrl":"10.1088/1361-648X/aeb05b","url":null,"abstract":"<p><p>Altermagnetic materials with high-performance multipiezo effect have attracted tremendous attention for their potential applications in information storage and logic operations. Here, we propose an altermagnetic monolayer Ti<sub>2</sub>ClIO with excellent dynamic, thermal, and mechanical stabilities. The monolayer Ti<sub>2</sub>ClIO presents zero net magnetization with an easy<i>xy</i>-plane. Moreover, it is a semiconductor with a direct band gap of 792 meV. The band structure shows a pronounced spin splitting of 914/811 meV for the valence/conduction band. Interestingly, a reversible valley polarization as high as 293 meV is induced in monolayer Ti<sub>2</sub>ClIO by applying a uniaxial strain, resulting in the piezovalley effect. Moreover, an out-of-plane piezoelectricity emerges in the present monolayer Ti<sub>2</sub>ClIO due to the broken horizontal mirror symmetry, showing the piezoelectric behavior with a strain coefficient of -0.03 pm V<sup>-1</sup>. This study unveils a promising candidate for developing multifunctional electronic devices.</p>","PeriodicalId":520686,"journal":{"name":"Journal of physics. Condensed matter : an Institute of Physics journal","volume":" ","pages":""},"PeriodicalIF":0.0,"publicationDate":"2026-10-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149122706","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Inverted valley hierarchy and multifunctional properties in two-dimensional TMX 2 (TM=Ti, Zr, Hf; X=N, P, As) for flexible valleytronics.","authors":"Qianze Li, Jin-Yang Cheng, Liang Fu, Jujian Liao, Liangpo Tang, Changyi Wu","doi":"10.1088/1361-648X/aeb639","DOIUrl":"https://doi.org/10.1088/1361-648X/aeb639","url":null,"abstract":"<p><p>High-mobility semiconductors that simultaneously host robust valley physics and mechanical compliance are highly sought after for translating valleytronics into flexible device technologies. Using first-principles calculations, we propose monolayer TMX2 (TM = Ti, Zr, Hf; X = N, P, As) as a multifunctional 2D platform for valleytronics and flexible electronics. Crystallizing in a hexagonal P 6m2 lattice, these materials exhibit robust valley-contrasting physics, with opposite spin polarizations and inverted Berry curvatures at K/K ' valleys, and a giant conduction-band spin splitting of up to 316-375 meV in HfX2. Nitride members (ZrN2 and HfN2) achieve high room-temperature electron mobilities of ∼10 3 cm 2 V -1 s -1 , far exceeding most known 2D valleytronic materials. Mechanically, All nine monolayers feature a rare mechanical combination of a Poisson's ratio near 0.6 and low Young's moduli, affording excellent stretchability for deformable devices. Strain engineering enables continuous band-gap tuning while preserving direct-gap character, and vacuum-level alignment shows their heterostructures can realize Type I, II, and III band alignments. These properties position TM2 as a unique multifunctional 2D platform combining fast transport, intrinsic valleytronics, and mechanical compliance for flexible optoelectronic and valleytronic applications.</p>","PeriodicalId":520686,"journal":{"name":"Journal of physics. Condensed matter : an Institute of Physics journal","volume":" ","pages":""},"PeriodicalIF":0.0,"publicationDate":"2026-10-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149225711","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Anisotropic control of the entanglement-criticality crossover in a Gamma-modified XY chain.","authors":"Mohammad Abbasi, Sasan Kheiri, Saeed Mahdavifar","doi":"10.1088/1361-648X/aeb5c0","DOIUrl":"https://doi.org/10.1088/1361-648X/aeb5c0","url":null,"abstract":"<p><p>We investigate the structure of quantum and classical correlations in the generalized off-diagonal Gamma spin chain, focusing on the interplay between interaction range and anisotropy across an interaction-driven quantum phase transition. By combining concurrence, quantum discord, Fermionic Correlation Participation (FCP), entanglement entropy, and central-charge scaling, we develop a unified multiscale characterization that connects two-site correlations, collective fermionic organization, and universal critical behavior. A central finding is the existence of a finite separation between the entanglement-vanishing point and the quantum critical point throughout the XY regime (0 < δ < 1), which collapses continuously as the system approaches the Ising limit. These results demonstrate that bipartite entanglement suppression and criticality are not generically equivalent in anisotropic long-range systems. Anisotropy progressively aligns the entanglement structure with the quantum critical point; however, in weakly anisotropic regimes the system remains in a critical phase with divergent correlations even after pairwise entanglement has vanished. Quantum discord, FCP, and entanglement entropy scaling collectively show that this suppression reflects a redistribution and geometric reorganization of correlations rather than their absence. Our results clarify the nontrivial relationship between entanglement, correlation geometry, and criticality in extended quantum systems, and have direct implications for engineered quantum spin systems with tunable anisotropic exchange couplings.</p>","PeriodicalId":520686,"journal":{"name":"Journal of physics. Condensed matter : an Institute of Physics journal","volume":" ","pages":""},"PeriodicalIF":0.0,"publicationDate":"2026-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149208436","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Branch-selective phonon localization through correlated sublattice disorder.","authors":"Sondipon Adhikari","doi":"10.1088/1361-648X/aeb5c1","DOIUrl":"https://doi.org/10.1088/1361-648X/aeb5c1","url":null,"abstract":"<p><p>Multiband lattices possess an internal degree of freedom absent from one-band Anderson models. At each Bloch wavenumber the acoustic and optical eigenvectors distribute their motion differently over the sublattices of the unit cell, and manufactured phononic lattices acquire tolerance-induced randomness separately on each sublattice, with tolerances that can be correlated within a cell. This paper develops a branch-resolved sublattice-participation formulation of weak-disorder localization for a grounded diatomic chain, building on the Lyapunov-exponent theory of correlated multicomponent media. To leading order in the disorder strength and inside an isolated passband, the localization exponent of each branch equals the disorder covariance projected through the squared Bloch participation weights of that branch and divided by the squared group velocity. The intra-cell cross-correlation enters this law through the backscattering phase between the two sublattices. An exact finite-chain eigensolution, branch-resolved random eigenvalue statistics and the weak-disorder law are derived and compared with transfer-matrix and Monte Carlo computation, which confirms the prefactor of the law across both band interiors. Moving a fixed disorder strength from one sublattice to the other reverses which branch localizes more strongly, so disorder placement becomes a design variable. Finite-chain eigenvalue statistics and localization weight the same correlation with different phase factors. Anticorrelated disorder therefore reduces eigenvalue scatter across a whole band, and it reduces localization near the zone centre and enhances it near the zone edge. The ensemble-mean response carries the same projection as a decoherence signature that depends on disorder placement. Disorder covariance in sublattice space thereby becomes a quantitative control for multiband phononic media, with direct extensions to more sublattices and to two dimensions.</p>","PeriodicalId":520686,"journal":{"name":"Journal of physics. Condensed matter : an Institute of Physics journal","volume":" ","pages":""},"PeriodicalIF":0.0,"publicationDate":"2026-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149208432","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Light-induced non-resonant spin reversal in quantum dot and in quantum ring.","authors":"Grzegorz Dziembaj, Tomasz Chwiej","doi":"10.1088/1361-648X/aeb520","DOIUrl":"https://doi.org/10.1088/1361-648X/aeb520","url":null,"abstract":"<p><p>Nanostructures like quantum dots and quantum rings subjected to non-resonant laser beam of circular polarization 
and moderate intensity exhibit characteristic changes in the orbital and in the spin degrees of freedom of the confined 
electrons. The coupling of the charge density to the electric field component of the light modifies the energy spectrum 
and, in the presence of spin-orbit interaction, may lead to high polarization of the electron spin. These observations 
were inferred from the analysis of the Floquet states which are the approximated stationary eigensolutions of the 
time-periodic Hamiltonian. Here, we study this problem solving numerically the 
time-dependent Schr\"odinger equation for the electron confined in quantum dot and quantum ring and taking 
into account both, the light-matter coupling and its influence on spin-orbital degrees of freedom. Our results show that 
the adiabatically switched light pulse would gently settle the system in one of the Floquet states with the reversed 
spin as compared to the initial state. 
The reversibility of this process is observed only for moderate intensities of light, however, this requires of about 
$10^{3}$ optical cycles which enormously elongates the spin reversal protocol. 
Therefore we next have looked for the time-optimized shapes of the light pulse and we found that the 
duration of the non-resonant pulse can be shorten to below $10^{2}$ optical cycles (corresponding to several pico 
seconds). Such optimized pulse can stimulate the selective transition between 
two electron states which are highly polarized in opposite direction. We show that switching between these states can 
be realized with fidelity exceeding 99.9%.</p>","PeriodicalId":520686,"journal":{"name":"Journal of physics. Condensed matter : an Institute of Physics journal","volume":" ","pages":""},"PeriodicalIF":0.0,"publicationDate":"2026-10-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149198838","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pedro L De Andres, Edith Goldberg, Fernando Flores
{"title":"Effective ionic Hamiltonians from many-body second-quantization Dyson orbitals: The Kondo resonance in triangulenes on Au(111).","authors":"Pedro L De Andres, Edith Goldberg, Fernando Flores","doi":"10.1088/1361-648X/aeb521","DOIUrl":"https://doi.org/10.1088/1361-648X/aeb521","url":null,"abstract":"<p><p>We present a theoretical study of the Kondo resonance in the family of n-triangulenes adsorbed on Au(111). The electronic structure and equilibrium geometry for both C 13 H 9 (2T) and C 22 H 12 (3T) are obtained from ab initio Hartree-Fock and density functional theory calculations. Generalization to other members of the family can be achieved along similar lines. The Hartree-Fock molecular wavefunctions provide the starting point for a multi-orbital many-body description based on a second-quantization formulation of Feynman-Dyson orbitals. This approach leads to an effective ionic Hamiltonian that describes charge fluctuations between the molecule and the metallic substrate for the spin 1 2 and 1 states of 2T and 3T, respectively. The Kondo resonance is then computed within a fourth-order expansion in the interaction using an equation of motion Green's functions formalism. This basic ab initio theoretical approach explains various microscopic mechanisms originating in many-body features related to even and odd members of the n-triangules family, establishing a direct connection with recent low-temperature high-resolution scanning tunneling spectroscopy experiments.</p>","PeriodicalId":520686,"journal":{"name":"Journal of physics. Condensed matter : an Institute of Physics journal","volume":" ","pages":""},"PeriodicalIF":0.0,"publicationDate":"2026-10-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149198764","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Daniel D Rivera, Gustavo M Dalpian, Carlos Mera Acosta
{"title":"Magnetoelectric paramagnets: exchange-driven s-wave spin splitting in compensated magnets.","authors":"Daniel D Rivera, Gustavo M Dalpian, Carlos Mera Acosta","doi":"10.1088/1361-648X/aeb51e","DOIUrl":"https://doi.org/10.1088/1361-648X/aeb51e","url":null,"abstract":"<p><p>In conventional antiferromagnets, local electric environments remain equivalent and combined inversion and time-reversal PT symmetry enforces spin-degenerate bands, whereas altermagnets and related compensated phases realize this inequivalence as long-range order electric environments. Materials with zero net magnetization can, nevertheless, exhibit spin-split electronic bands when the local electric environments associated with opposite magnetic moments are inequivalent. Here we this regime in which electric inequivalence arises locally from a polymorphous magnetic configuration, represented by a static, globally compensated arrangement of nonzero local moments with distinct spin neighborhoods. These neighborhoods self-consistently generate site-dependent electric offsets through the exchange-correlation potential. The correlation between these offsets and the local moments produces a finite potential-weighted Néel vector even though the net magnetization vanishes, providing a route to exchange-driven, s-wave-like spin splitting without chemical substitution, structural relaxation, heterostructures, or long-range-ordered electric inequivalence. Using spin-density functional theory for EuB6, for which previous calculations identified spin-polymorphism-induced on-site electric inequivalence, we contrast an electrically homogeneous antiferromagnetic reference with polymorphous representations of the paramagnetic state. The former remains spin degenerate, whereas the polymorphous configurations develop environment-dependent charge redistribution and finite spin splitting in the unfolded spectral function. These results establish magnetic polymorphism as an additional design axis for spin-resolved electronic structures beyond ferromagnetism, ferrimagnetism, and altermagnetism.</p>","PeriodicalId":520686,"journal":{"name":"Journal of physics. Condensed matter : an Institute of Physics journal","volume":" ","pages":""},"PeriodicalIF":0.0,"publicationDate":"2026-10-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149198811","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Antiferromagnetic semiconductor NdAsTe: A new member of LnAsTe (Ln = Lanthanoids) compounds.","authors":"Prabuddha Kant Kant Mishra, Sandip Guchhait, Aarti Gautam, Haribrahma Singh, Ramesh Chandra Nath, Rie Y Umetsu, Ashok Kumar Ganguli","doi":"10.1088/1361-648X/aeb51f","DOIUrl":"https://doi.org/10.1088/1361-648X/aeb51f","url":null,"abstract":"<p><p>Rare-earth-based intermetallic compounds are at the forefront of materials science, providing valuable insights into the interplay among magnetism, topology, and structural correlations. The interesting properties of these materials, driven by localized 4f -electrons, strong spin-orbit coupling (SOC), and crystal electric field (CEF) effect, make them a focal point in solid-state physics for designing advanced functional materials. We have synthesized NdAsTe using the solid-state reaction route and explored the temperature and field-dependent magnetic properties, which demonstrate long-range antiferromagnetic (AFM) ordering below T N ≃ 2.4 K. The low-temperature Curie-Weiss temperature θ CW ≃ -1.89 K implies a net AFM interaction between the Nd 3+ ions. Furthermore, the isothermal magnetization data exhibit signatures of spin-reorientation of the AFM-aligned spins at T < T N , corroborated through magnetic entropy studies. The signature of AFM transition is also manifested as a peak at T N in the temperature-dependent specific heat which gradually shifts towards lower temperatures at higher applied fields. The derived parameters from specific heat data suggest the presence of strong electronic correlations in NdAsTe. The magnetic susceptibility and specific heat data suggest that the magnetic ground state is a Kramers' doublet with effective spin J eff = 1/2 at low temperatures. The electrical transport study revealed the semiconducting nature with a band gap of 70 meV. Furthermore, the low temperature (T < 20 K) magnetotransport studies unfold a crossover from positive to negative magnetoresistance behavior.</p>","PeriodicalId":520686,"journal":{"name":"Journal of physics. Condensed matter : an Institute of Physics journal","volume":" ","pages":""},"PeriodicalIF":0.0,"publicationDate":"2026-10-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149198799","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Quantum coupling of topological junction states in armchair graphene nanoribbon structures.","authors":"Y Takagaki","doi":"10.1088/1361-648X/aeb523","DOIUrl":"https://doi.org/10.1088/1361-648X/aeb523","url":null,"abstract":"<p><p>Connecting armchair graphene nanoribbons in series generates topological junction states at the interface when the topology class is not matched due to their difference in the width. The number of such states is investigated for the systems where multiple nanoribbon junctions are mutually coupled quantum-mechanically in two manners. (1) Nonidentical junctions are asymmetrically series-connected. (2) The nanoribbon structures contain parallel paths. It is shown for the asymmetric structures that unpaired states are present at the Dirac point in addition to the paired states that appear away from the Dirac point. The topology class is not established for the individual narrow-wide interfaces in the situation of the parallel paths. The total winding number that provides the number of the topological states is given for the whole junction hosting the parallel paths. Furthermore, the overlap of the topological zero-energy states when the above nanoribbon structures are repeated periodically as superlattices is found to produce no Bloch mode at the Dirac point.</p>","PeriodicalId":520686,"journal":{"name":"Journal of physics. Condensed matter : an Institute of Physics journal","volume":" ","pages":""},"PeriodicalIF":0.0,"publicationDate":"2026-10-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149198751","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Recent progress in physical properties and power electronic applications of ε(κ)-Ga2O3.","authors":"Yanfang Zhang, Jinggang Hao, Conggui Huang","doi":"10.1088/1361-648X/aeb51d","DOIUrl":"https://doi.org/10.1088/1361-648X/aeb51d","url":null,"abstract":"<p><p>Gallium oxide (Ga2O3) has emerged as a promising candidate for next-generation power electronics due to its ultra-widebandgap and superior critical breakdown field. The emergent spontaneous polarization and ferroelectric characteristics of ε(κ)-Ga₂O₃ are anticipated to enable the development of advanced power devices with both low power consumption and high efficiency. In this review, we describe the development on the physical properties and power electronic device applications of ε(κ)-Ga2O3, covering its crystal structure and polarization properties, optical characteristics, thermal transport behavior, and electrical properties. Then, we highlight recent progress in ε(κ)-Ga₂O₃-based power electronic devices, with particular focus on Schottky barrier diodes, p-n heterojunctions diodes, and metal-oxide-semiconductor field-effect transistors.</p>","PeriodicalId":520686,"journal":{"name":"Journal of physics. Condensed matter : an Institute of Physics journal","volume":" ","pages":""},"PeriodicalIF":0.0,"publicationDate":"2026-10-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149198813","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}