Vaibhav V. Kuruganti, Olindo Isabella, Valentin D. Mihailetchi
{"title":"Structuring Interdigitated Back Contact Solar Cells Using the Enhanced Oxidation Characteristics Under Laser‐Doped Back Surface Field Regions","authors":"Vaibhav V. Kuruganti, Olindo Isabella, Valentin D. Mihailetchi","doi":"10.1002/pssa.202300820","DOIUrl":"https://doi.org/10.1002/pssa.202300820","url":null,"abstract":"Interdigitated back contact (IBC) architecture can yield among the highest silicon wafer‐based solar cell conversion efficiencies. Since both polarities are realized on the rear side, there is a definite need for a patterning step. Some of the common patterning techniques involve photolithography, inkjet patterning, and laser ablation. This work introduces a novel patterning technique for structuring the rear side of IBC solar cells using the enhanced oxidation characteristics under the locally laser‐doped n++ back surface field (BSF) regions with high‐phosphorous surface concentrations. Phosphosilicate glass layers deposited via POCl3 diffusion serve as a precursor layer for the formation of local heavily laser‐doped n++ BSF regions. The laser‐doped n++ BSF regions exhibit a 2.6‐fold increase in oxide thickness compared to the nonlaser‐doped n+ BSF regions after undergoing high‐temperature wet thermal oxidation. The utilization of oxide thickness selectivity under laser‐doped and nonlaser‐doped regions serves two purposes in the context of the IBC solar cell, first patterning rear side and second acting as a masking layer for the subsequent boron diffusion. Proof‐of‐concept solar cells are fabricated using this novel patterning technique with a mean conversion efficiency of 20.41%.","PeriodicalId":506741,"journal":{"name":"physica status solidi (a)","volume":"56 10","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-01-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139387254","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Zechen Hu, Jiawei Fu, Li Cheng, Degong Ding, Jingkun Cong, Deren Yang, Xuegong Yu
{"title":"The Mechanism Behind the Annealing‐Induced Reduction of Infrared Absorption in Zinc‐Hyperdoped Silicon","authors":"Zechen Hu, Jiawei Fu, Li Cheng, Degong Ding, Jingkun Cong, Deren Yang, Xuegong Yu","doi":"10.1002/pssa.202300738","DOIUrl":"https://doi.org/10.1002/pssa.202300738","url":null,"abstract":"Pulsed laser hyperdoping is widely investigated as an effective method for expanding the infrared absorption of silicon. Prior to further device fabrication, thermal treatment is commonly applied to hyperdoped silicon to repair lattice defects and activate dopants. However, it is observed that thermal treatment adversely affects the infrared absorption of hyperdoped silicon, and the underlying mechanisms remain incompletely understood. Herein, zinc‐hyperdoped silicon (Si:Zn) is prepared using vacuum magnetron sputtering combined with femtosecond laser pulses, and the mechanisms of the reduction in infrared absorption during conventional annealing of Si:Zn samples are investigated. The diffusion of zinc and its precipitation as zinc clusters in silicon are observed during the annealing process, leading to a decrease in the concentration of zinc dopants within the silicon lattice and consequent attenuation of infrared absorption. Building upon this understanding, the approach of short timescale annealing subjected to infrared rapid thermal annealing furnace is proposed to be employed as a method to mitigate the adverse effects of zinc transitional precipitation, resulting in enhancement of the performance of Si:Zn optoelectronic devices.","PeriodicalId":506741,"journal":{"name":"physica status solidi (a)","volume":"15 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-01-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139387206","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"P‐N Junction‐Driven Abnormal Electric Field Distribution in the Degraded Multilayer Ceramic Capacitors","authors":"Wentong Du, Weiwei Yang, Cheng Yi, Kunyu Zhao, Faqiang Zhang, Zhifu Liu, Huarong Zeng","doi":"10.1002/pssa.202300871","DOIUrl":"https://doi.org/10.1002/pssa.202300871","url":null,"abstract":"Local electric field distribution in the dielectric layer of BaTiO3‐based multilayer ceramic capacitors (MLCCs) is investigated by Kelvin probe force microscopy before and after highly accelerated life test (HALT) degradation combined with the energy band diagram. An unusual electric field concentration phenomenon is directly visualized near the HALT cathode region in the degraded MLCCs while a reverse voltage is applied. Such abnormal behavior is ascribed to the migration of oxygen vacancies within the dielectric layer during the HALT, leading to the formation of a P‐N junction structure and further a heightened barrier under a reverse bias. As a result, a P‐N junctional model is proposed for understanding local failure mechanism of the degraded MLCCs, which enrich the insights into the insulation resistance degradation and the reliability of MLCCs.","PeriodicalId":506741,"journal":{"name":"physica status solidi (a)","volume":"32 2","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-01-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139389313","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
