physica status solidi (a)最新文献_第2页

Threshold Voltage Modulation and Gate Leakage Suppression of Enhancement‐Mode GaN HEMT by Metal/Insulator/p‐GaN Gate Structure 利用金属/绝缘体/p-GaN 栅极结构实现增强型 GaN HEMT 的阈值电压调制和栅极漏电抑制

physica status solidi (a) Pub Date : 2024-05-21 DOI: 10.1002/pssa.202400146

Kuo Zhang, Kai Liu, Shuang Li, Chong Wang, Xiaohua Ma, Xuefeng Zheng, Ang Li, Wentao Zhang, Yue Hao

{"title":"Threshold Voltage Modulation and Gate Leakage Suppression of Enhancement‐Mode GaN HEMT by Metal/Insulator/p‐GaN Gate Structure","authors":"Kuo Zhang, Kai Liu, Shuang Li, Chong Wang, Xiaohua Ma, Xuefeng Zheng, Ang Li, Wentao Zhang, Yue Hao","doi":"10.1002/pssa.202400146","DOIUrl":"https://doi.org/10.1002/pssa.202400146","url":null,"abstract":"Herein, a metal/insulator/p‐GaN gate HEMT (MIP‐HEMT) with Si3N4 gate dielectric layer is fabricated. Compared to the conventional p‐GaN HEMT, the MIP‐HEMT has a higher threshold voltage (Vth) of 4.8 V and better gate leakage suppression. The mechanism of threshold voltage increase in MIP‐HEMT is elucidated through an analysis of the electric field distribution in the gate region and the proposed gate capacitance model. Furthermore, MIP‐HEMTs with gate dielectric layers of varying dielectric constants and thicknesses are designed and simulated. The obtained results lead to the derivation of an empirical formula for the threshold voltage of the MIP‐HEMT under ideal dielectric/p‐GaN interface conditions, in relation to the dielectric constant and thickness of the gate dielectric layer. Additionally, simulations are conducted on the MIP‐HEMT incorporating fixed charges at the dielectric/p‐GaN interface, and the impact of interface charges is investigated. This refinement enables a more accurate prediction of the MIP‐HEMT's threshold voltage. Conclusively, MIP‐HEMTs can effectively modulate the threshold voltage by manipulating the parameters of the gate dielectric layer, thereby extending the threshold voltage range of conventional enhancement‐mode devices.","PeriodicalId":506741,"journal":{"name":"physica status solidi (a)","volume":"125 38","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-05-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141115329","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Investigations of Sustainable Biodegradable Oil and Magnetic Particle‐Based Magnetorheological Fluid Dampers for Vibration Attenuation of a Rotor Dynamic System 用于转子动力系统减振的可持续生物降解油和磁性颗粒磁流变液阻尼器的研究

physica status solidi (a) Pub Date : 2024-05-19 DOI: 10.1002/pssa.202400111

Mohd Anis Ansari, Pradipta Sarmah, A. Bisoi, Agnimitra Biswas

{"title":"Investigations of Sustainable Biodegradable Oil and Magnetic Particle‐Based Magnetorheological Fluid Dampers for Vibration Attenuation of a Rotor Dynamic System","authors":"Mohd Anis Ansari, Pradipta Sarmah, A. Bisoi, Agnimitra Biswas","doi":"10.1002/pssa.202400111","DOIUrl":"https://doi.org/10.1002/pssa.202400111","url":null,"abstract":"This article aims to study the physical characterization and performance of a material‐based magnetorheological fluid (MRF) dampers for vibration attenuation of a high‐speed rotor–motor system near resonance. Four samples are synthesized by combining electrolytic iron and carbonyl iron (CI) with Castor and Karanja oil and experimentally investigated for their contribution to vibration attenuation. The results demonstrate effective vibration attenuation of the biodegradable oil‐based MRF damper than the nonbiodegradable oil‐based MRF damper. The best vibration attenuation is observed in the case of moderately viscous MRF. CI‐based samples exhibit a lower sedimentation rate, hence recommended for MRF. The vibration amplitude is maximum for the Castor oil‐based MRF damper, however, is minimum for the Karanja oil‐based MRF damper. The steady and transient results of vibration amplitudes are obtained and analyzed for different currents supplied to the MRF damper. The range of unstable speed near resonance is also obtained. The prepared samples show higher attenuation of 6–25% than Sample 5. The vibration amplitude attenuation of Sample 4 and Sample 5 are 47% and 22%, respectively. The findings of this study carry significant implications for controlling the vibration of the dynamic system using an eco‐friendly damping system.","PeriodicalId":506741,"journal":{"name":"physica status solidi (a)","volume":"112 40","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141124460","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Evolution of the Electrical Conductivity of LiNb1−xTaxO3 Solid Solutions across the Ferroelectric Phase Transformation LiNb1-xTaxO3 固溶体在铁电相转变过程中的电导率变化

physica status solidi (a) Pub Date : 2024-05-19 DOI: 10.1002/pssa.202300966

F. El Azzouzi, D. Klimm, Alexander Kapp, Leonard M. Verhoff, Nils A. Schäfer, S. Ganschow, Klaus-Dieter Becker, Simone Sanna, H. Fritze

{"title":"Evolution of the Electrical Conductivity of LiNb1−xTaxO3 Solid Solutions across the Ferroelectric Phase Transformation","authors":"F. El Azzouzi, D. Klimm, Alexander Kapp, Leonard M. Verhoff, Nils A. Schäfer, S. Ganschow, Klaus-Dieter Becker, Simone Sanna, H. Fritze","doi":"10.1002/pssa.202300966","DOIUrl":"https://doi.org/10.1002/pssa.202300966","url":null,"abstract":"The investigation of the structural phase transition in the vicinity of the Curie temperature of crystals is motivated by the expected combination of advantageous high‐temperature properties of and , including high piezoelectric modules and remarkable high‐temperature stability, respectively. marks the ultimate limit for exploiting the piezoelectric properties; however, transition‐related structural modifications might impact this and other properties even below . Remarkably, the phase transition from the ferroelectric to the paraelectric phase, whose temperature strongly depends on the composition x, shows a significant drop in the activation energy of the electrical conductivity. The magnitude, temperature dependence, and underlying mechanisms of this drop are discussed from a microscopic perspective. Molecular dynamics calculations in the framework of the density functional theory show that substantial displacements of the cations occur below for both the end compounds and , and might thus affect the electrical conductivity. Above , the migration of lithium ions is presumably facilitated by a shortened diffusion path for the most favorable jump of the lithium ions. Electronic contributions to the conductivity, which become important above 900 K, are explained within the polaronic picture by the formation and migration of free small polarons.","PeriodicalId":506741,"journal":{"name":"physica status solidi (a)","volume":"118 26","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141124235","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Vertical GaN PIN Structure with Intrinsic AlGaN Drift Layer Grown Using Metal‐Organic Chemical Vapor Deposition 利用金属有机化学气相沉积技术生长的带有本征氮化铝漂移层的垂直氮化镓 PIN 结构

physica status solidi (a) Pub Date : 2024-05-19 DOI: 10.1002/pssa.202400058

Yunseok Heo, Joocheol Jeong, Shyam Mohan, Minho Kim, Jooyong Park, Joonhyuk Lee, Okhyun Nam

{"title":"Vertical GaN PIN Structure with Intrinsic AlGaN Drift Layer Grown Using Metal‐Organic Chemical Vapor Deposition","authors":"Yunseok Heo, Joocheol Jeong, Shyam Mohan, Minho Kim, Jooyong Park, Joonhyuk Lee, Okhyun Nam","doi":"10.1002/pssa.202400058","DOIUrl":"https://doi.org/10.1002/pssa.202400058","url":null,"abstract":"In this study, it is aimed to examine the DC characteristics of a vertical PIN diode featuring AlGaN as the drift layers. In the investigation, observing the changes in DC characteristics with the variation of Al content (0%–4%) in the drift layers as well as its thickness is focused on. By applying AlGaN as the drift layer, the semi‐insulating properties are augmented and the detrimental background carbon impurity is reduced, leading to a reduction in the leakage current and an improvement in the breakdown voltage characteristics of the device. Room‐temperature and low‐temperature photoluminescence measurements confirm a reduction in the intensity of both yellow luminescence and blue luminescence, which can be attributed to the decrease in defect concentration. Furthermore, to minimize the occurrence of premature breakdown voltage, p‐type GaN is meticulously etched into a bevel shape, and subsequent confirmation through the utilization of a scanning electron microscope reveals an inclination of 13°. The outcome of the analysis on the DC characteristic indicates an improvement in reverse‐bias characteristics with the increase in the Al ratio in the drift layer for the 2 μm series. Furthermore, for the 20 μm Al0.04Ga0.96N, a breakdown voltage of 2540 V is recorded.","PeriodicalId":506741,"journal":{"name":"physica status solidi (a)","volume":"4 4","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141123911","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Ultraefficient Ammonia Gas Sensors Based on Pt‐Loaded WO3 Nanobars 基于铂负载 WO3 纳米棒的超高效氨气传感器

physica status solidi (a) Pub Date : 2024-05-19 DOI: 10.1002/pssa.202400175

Montawat Wiboon, Pimpan Leangtanom, Kata Jaruwongrungsee, N. Chanlek, A. Wisitsoraat, V. Yordsri, Patcharee Kongpark, P. Pookmanee, V. Kruefu

{"title":"Ultraefficient Ammonia Gas Sensors Based on Pt‐Loaded WO3 Nanobars","authors":"Montawat Wiboon, Pimpan Leangtanom, Kata Jaruwongrungsee, N. Chanlek, A. Wisitsoraat, V. Yordsri, Patcharee Kongpark, P. Pookmanee, V. Kruefu","doi":"10.1002/pssa.202400175","DOIUrl":"https://doi.org/10.1002/pssa.202400175","url":null,"abstract":"\u0000Herein, unloaded WO3 (WO3) and Pt‐loaded WO3 (Pt‐WO3) nanobars are successfully synthesized through simple hydrothermal and impregnation methods. X‐ray diffractometer analysis confirms the formation of a monoclinic WO3 structure. Surface analysis reveals that the Pt impregnation results in a significant increase in the specific surface area of WO3 nanobars. The gas‐sensing performance of sensors based on nanobars is measured toward ammonia (NH3) with varying NH3 concentrations at different operating temperatures. Compared with the pristine WO3 sensor, the Pt‐WO3‐based sensor with an optimal Pt content of 1 wt% exhibits a relatively low optimum operating temperature of 250 °C and a superior response of 960–50 ppm NH3. Furthermore, the Pt‐WO3‐based sensor also displays fast response, excellent NH3 selectivity to ammonia, moderate humidity dependence, and good stability. Therefore, the developed hydrothermal and impregnation methods could be a suitable alternative procedure for the synthesis of Pt‐WO3 nanobars useful for advanced NH3‐sensing applications.","PeriodicalId":506741,"journal":{"name":"physica status solidi (a)","volume":"31 3","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141123660","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Flexible Ni‐Based Bimetallic Spinel Oxide (NiM2O4, M = Mn, Fe, Co) Electrodes for Supercapacitor Applications 用于超级电容器的柔性镍基双金属尖晶石氧化物（NiM2O4，M = Mn、Fe、Co）电极

physica status solidi (a) Pub Date : 2024-05-19 DOI: 10.1002/pssa.202400003

Panupan Maneesard, V. Somsongkul, P. Chirawatkul, C. Saiyasombat, R. Vannier, C. Kongmark

{"title":"Flexible Ni‐Based Bimetallic Spinel Oxide (NiM2O4, M = Mn, Fe, Co) Electrodes for Supercapacitor Applications","authors":"Panupan Maneesard, V. Somsongkul, P. Chirawatkul, C. Saiyasombat, R. Vannier, C. Kongmark","doi":"10.1002/pssa.202400003","DOIUrl":"https://doi.org/10.1002/pssa.202400003","url":null,"abstract":"Herein, the single‐phase Ni‐based bimetallic spinel oxide (NiM2O4, M = Mn, Fe, Co) nanoparticles are successfully synthesized by sol–gel method and coated on a carbon cloth substrate to form flexible electrodes for supercapacitor applications. The effects of transition metal activity, calcination temperature, surface, and textural properties on the electrochemical properties of spinel electrode materials are demonstrated. It is found that lowering the calcination temperature results in a decrease in crystallite size and particle size, leading to an increase in surface area and pore volume. X‐Ray absorption spectroscopy reveals the presence of Mn2+/3+, Fe2+/3+, and Co2+/3+ in materials. According to the electrochemical studies, NiMn2O4 electrode in Na2SO4 electrolyte exhibits electrical double‐layer capacitance behavior, while NiFe2O4 and NiCo2O4 electrodes in KOH electrolyte exhibit pseudocapacitive behavior. All electrode materials have low solution resistance and charge transfer resistance. NiCo2O4 provides the highest specific capacitance (85.60 F g−1 at 2.5 A g−1) followed by NiFe2O4 and NiMn2O4. It seems likely that the high electrochemical activity of Co2+/3+ and small particle size of NiCo2O4 nanoparticles play an important role in improving the redox process and charge transfer, which may enhance the electrochemical performance of this electrode material.","PeriodicalId":506741,"journal":{"name":"physica status solidi (a)","volume":"116 30","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141124553","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Effects of Postdeposition Annealing on the Electrical Properties of Cu2O/4H–SiC PiN Diodes 沉积后退火对 Cu2O/4H-SiC PiN 二极管电气特性的影响

physica status solidi (a) Pub Date : 2024-05-19 DOI: 10.1002/pssa.202400018

Hyung-Jin Lee, G. Lee, Hyun-Woo Lee, Tae-Hee Lee, Il Ryong Kim, Min Kyu Kim, Byeong Cheol Lim, Sang-Mo Koo

{"title":"Effects of Postdeposition Annealing on the Electrical Properties of Cu2O/4H–SiC PiN Diodes","authors":"Hyung-Jin Lee, G. Lee, Hyun-Woo Lee, Tae-Hee Lee, Il Ryong Kim, Min Kyu Kim, Byeong Cheol Lim, Sang-Mo Koo","doi":"10.1002/pssa.202400018","DOIUrl":"https://doi.org/10.1002/pssa.202400018","url":null,"abstract":"Copper oxide (Cu2O) is a promising p‐type material owing to its high absorption coefficient, suitable bandgap width, chemical stability, nontoxicity, and abundance. In this study, the effect of postdeposition annealing (PDA) on the electrical properties of Cu2O thin films deposited on silicon carbide (SiC) substrates is investigated. The films are subjected to PDA using radio‐frequency sputtering at various temperatures in air. During PDA, the Cu2O films are maintained at <300 °C and transitioned to cupric oxide (CuO) at 400 °C. The as‐deposited Cu2O film exhibits a low oxidation peak (Cu2+), whereas the phase‐transformed CuO films exhibit a higher binding energy with the emergence of satellite peaks. The rectification ratios of the Cu2O device annealed at 300 °C and CuO device annealed at 400 °C are determined as 2.02 × 107 and 1.01 × 105, respectively, denoting the substantial enhancement of approximately 55.04 for the Cu2O/SiC device and degradation of approximately 0.28 for the CuO/SiC device relative to their non‐annealed counterparts. Therefore, in this study, the significant improvement in the performance of Cu2O thin films with the meticulous deposition control of potential p‐type materials, such as Cu2O and CuO, for high‐throughput and low‐cost electronic applications is demonstrated.","PeriodicalId":506741,"journal":{"name":"physica status solidi (a)","volume":"124 36","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141123779","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Suppression of Enhanced Magnesium Diffusion During High‐Pressure Annealing of Implanted GaN 抑制植入式氮化镓高压退火过程中的镁扩散增强效应

physica status solidi (a) Pub Date : 2024-05-19 DOI: 10.1002/pssa.202400080

A. Jacobs, B. Feigelson, J. S. Lundh, J. Spencer, J. A. Freitas, B. Gunning, R. J. Kaplar, Yuhao Zhang, M. Tadjer, K. Hobart, T. Anderson

{"title":"Suppression of Enhanced Magnesium Diffusion During High‐Pressure Annealing of Implanted GaN","authors":"A. Jacobs, B. Feigelson, J. S. Lundh, J. Spencer, J. A. Freitas, B. Gunning, R. J. Kaplar, Yuhao Zhang, M. Tadjer, K. Hobart, T. Anderson","doi":"10.1002/pssa.202400080","DOIUrl":"https://doi.org/10.1002/pssa.202400080","url":null,"abstract":"Activation of ion‐implanted p‐type dopants in gallium nitride has demonstrated great progress utilizing high pressures to enable novel and traditional device architectures; however, such conditions consistently exhibit anomalously enhanced diffusion up to several microns in very short periods of time for device relevant concentrations. Here, this diffusion is shown to be modulated by unintentional hydrogen content within the anneal ambient and thus controllable by inclusion of a high‐temperature hydrogen getter. Furthermore, diffusion is also shown to be greatly suppressed using co‐implanted oxygen at low concentrations while simultaneously maintaining characteristics of p‐type material in photoluminescence. Subsequently, after annealing at 1300 °C for 30 min in 3.8 kbar of nitrogen pressure, the magnesium concentration in the diffusion tail is suppressed by 28% at 1–1.5 μm in depth using a hydrogen getter alone, which reduces hydrogen uptake by 45% and fully suppressed at >1 μm in depth using co‐implantation alone and further reduced with concurrent use of a hydrogen getter. Co‐implantation alone reduces the in‐diffused magnesium dose by 60% compared to reference samples.","PeriodicalId":506741,"journal":{"name":"physica status solidi (a)","volume":"107 23","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141124602","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Correction to “On the Role of Nuclear Motion in Singlet Exciton Fission: The Case of Single‐Crystal Pentacene” 对 "论核运动在单色激子裂变中的作用：单晶五碳烯的案例"

physica status solidi (a) Pub Date : 2024-02-02 DOI: 10.1002/pssa.202400023

A. Neef, M. Rossi, M. Wolf, R. Ernstorfer, H. Seiler

引用次数: 0

Correction to “On the Role of Nuclear Motion in Singlet Exciton Fission: The Case of Single‐Crystal Pentacene” 对 "论核运动在单色激子裂变中的作用：单晶五碳烯的案例"

physica status solidi (a) Pub Date : 2024-02-02 DOI: 10.1002/pssa.202400023

A. Neef, M. Rossi, M. Wolf, R. Ernstorfer, H. Seiler

引用次数: 0