APL Materials最新文献_第2页

Asymmetric optical properties and bandgap shift of pre-strained flexible ZnO films 预应变柔性氧化锌薄膜的不对称光学特性和带隙偏移

APL Materials Pub Date : 2024-04-01 DOI: 10.1063/5.0202381

Jiamin Liu, Zhikang Zhou, Honggang Gu, Jinlong Zhu, Hao Jiang, Shiyuan Liu

{"title":"Asymmetric optical properties and bandgap shift of pre-strained flexible ZnO films","authors":"Jiamin Liu, Zhikang Zhou, Honggang Gu, Jinlong Zhu, Hao Jiang, Shiyuan Liu","doi":"10.1063/5.0202381","DOIUrl":"https://doi.org/10.1063/5.0202381","url":null,"abstract":"Strain engineering has been extensively explored to modulate the various intrinsic properties of flexible inorganic semiconductor films. However, experimental characterization of tensile and compressive strain-induced modulation of optoelectronic properties and their differences has not been easily implemented in flexible inorganic semiconductor films. Herein, the strain-dependent structural, optical, and optoelectronic properties of flexible ZnO films under pre-tensile and pre-compressive strains are systemically investigated by a Mueller matrix ellipsometry-based quantitative characterization method combined with x-ray diffraction and first-principle calculation. With extended prestress-driven deposition processing under bi-direction bending modes, pre-tensile and pre-compressive strains with symmetric magnitudes can be achieved in flexible ZnO films, which allows precise observation of the strain-driven asymmetric modulation of optoelectronic properties. When the applied prestrain varies approximately equally from 0% (baseline) to −0.99% (compression) and 1.07% (tensility), respectively, the relative changes for the c-axis lattice constant are 0.0133 and 0.0104 Å, respectively. Meanwhile, the dependence factors of the bandgap energy on the pre-compression and pre-tensile strains were determined as −0.0099 and −0.0156 eV/%, respectively, and the complex refractive index also presents an asymmetric varying trend. With the help of the strain–stress analysis and the first-principle calculation, the intriguing asymmetric strain-optical modulation effect could be attributed to the biaxial strain mechanism and the difference in the deformation potential between the two prestrain modes. These systematic investigation consequences are thus promising as a basis for the booming applications of the flexible inorganic semiconductor ensemble.","PeriodicalId":504659,"journal":{"name":"APL Materials","volume":"276 ","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140779870","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A three-dimensional coupled structure triboelectric nanogenerator for vertical and horizontal mechanical energy harvesting and fitness gait monitoring 用于垂直和水平机械能采集和健身步态监测的三维耦合结构三电纳米发电机

APL Materials Pub Date : 2024-04-01 DOI: 10.1063/5.0207115

Cheng Luo, Hai Li

{"title":"A three-dimensional coupled structure triboelectric nanogenerator for vertical and horizontal mechanical energy harvesting and fitness gait monitoring","authors":"Cheng Luo, Hai Li","doi":"10.1063/5.0207115","DOIUrl":"https://doi.org/10.1063/5.0207115","url":null,"abstract":"Recently, the self-powered monitoring device used for wearable sensors has attracted attention from various industries. It is worth noting that previous self-powered sensors were mostly focused on unidirectional sensing and monitoring, and few sensors can achieve both longitudinal and transverse sensing functions simultaneously. Here, we designed an arched and stacked coupling structure triboelectric nanogenerator (AS-TENG) to harvest horizontal and vertical mechanical energy. Meanwhile, the AS-TENG can simultaneously achieve sensing effects on longitudinal pressure and transverse pulling force. According to the results, the pulling force sensing sensitivity of AS-TENG can reach 2.415 V N−1, and the pressure sensing sensitivity of AS-TENG can arrive at 2.78 V N−1. Furthermore, under longitudinal 6 Hz mechanical motion excitation, the open-circuit voltage (Voc) and short circuit current (Isc) of AS-TENG can reach 28.21 μA and 173.25 V, respectively. The transfer charge (Qsc) of AS-TENG can arrive at 169.7 nC. The AS-TENG can achieve a maximum output power of 2.02 mW at a 3 MΩ load. Moreover, the sensing signal pulse width of AS-TENG can reach 180 ms, which is higher than the traditional arch structure’s 110 ms, indicating the unique advantages of AS-TENG in future fitness monitoring. This study provides a 3D triboelectric multi-directional sensor that will serve the fields of intelligent wearable fitness and sports.","PeriodicalId":504659,"journal":{"name":"APL Materials","volume":"296 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140780390","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Emerging materials in antiferromagnetic spintronics 反铁磁自旋电子学中的新兴材料

APL Materials Pub Date : 2024-03-01 DOI: 10.1063/5.0206199

V. Baltz, A. Hoffmann, S. Emori, D.-F. Shao, T. Jungwirth

引用次数: 0

Erratum: “Growth of β-Ga2O3 and ε/κ-Ga2O3 on AlN(0001) by molecular-beam epitaxy” [APL Mater. 11, 111113 (2023)] 更正："通过分子束外延在氮化铝（0001）上生长 β-Ga2O3 和 ε/κ-Ga2O3" [APL Mater.

APL Materials Pub Date : 2024-01-01 DOI: 10.1063/5.0192370

Sushma Raghuvansy, Jon P. McCandless, M. Schowalter, A. Karg, M. Alonso-Orts, Martin S. Williams, C. Tessarek, Stephan Figge, K. Nomoto, H. Xing, D. Schlom, A. Rosenauer, D. Jena, Martin Eickhoff, Patrick Vogt

引用次数: 0