Chinese Physics B最新文献_第2页

Polarity-controllable magnetic skyrmion filter 极性可控磁性天离子滤波器

Chinese Physics B Pub Date : 2024-07-17 DOI: 10.1088/1674-1056/ad6421

Xiaolin Ai, Huiting Li, Xue-Feng Zhang, Changfeng Li, Je-Ho Shim, Xiao-Ping Ma, H. Piao

{"title":"Polarity-controllable magnetic skyrmion filter","authors":"Xiaolin Ai, Huiting Li, Xue-Feng Zhang, Changfeng Li, Je-Ho Shim, Xiao-Ping Ma, H. Piao","doi":"10.1088/1674-1056/ad6421","DOIUrl":"https://doi.org/10.1088/1674-1056/ad6421","url":null,"abstract":"\u0000 The skyrmion generator is one of the indispensable components for the future functional skyrmion devices, but the process of generating skyrmion cannot avoid mixing with other magnetic textures, such as skyrmionium and nested skyrmion bags. These mixed magnetic textures will inevitably lead to the blockage of skyrmion transport and even the distortion of data information. Therefore, the design of an efficient skyrmion filter is of great significance for the development of skyrmion-based spintronic devices. In this work, a skyrmion filter scheme is proposed, and the high-efficiency filtering function is demonstrated by micromagnetic simulations. The results show that the filtering effect of the scheme depends on the structure geometry and the spin current density that drives the skyrmion. Based on this scheme, the polarity of the filtered skyrmion can be controlled by switching the magnetization state at the output end, and the “cloning” of the skyrmion can be realized by geometric optimization of the structure. We believe that in the near future, the skyrmion filter will become one of the important components of skyrmion-based spintronic devices in the future.","PeriodicalId":504421,"journal":{"name":"Chinese Physics B","volume":" 28","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-07-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141827834","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Alternating spin splitting of electronic and magnon bands in two-dimensional altermagnetic materials 二维改磁材料中电子带和磁子带的交替自旋分裂

Chinese Physics B Pub Date : 2024-07-17 DOI: 10.1088/1674-1056/ad6425

Qian Wang, Da-Wei Wu, Guang-Hua Guo, Meng-Qiu Long, Yun-Peng Wang

引用次数: 0

Bessel vortices in spin-1 Bose-Einstein condensates with Zeeman splitting and spin-orbit coupling 具有泽曼分裂和自旋轨道耦合的自旋-1 玻色-爱因斯坦凝聚体中的贝塞尔漩涡

Chinese Physics B Pub Date : 2024-07-17 DOI: 10.1088/1674-1056/ad6424

Huan-Bo Luo, Xin-Feng Zhang, Runhua Li, Yongyao Li, Bin Liu

引用次数: 0

Imaging through scattering layers using a near-infrared low-spatial-coherence fiber random laser 利用近红外低空间相干光纤随机激光器进行散射层成像

Chinese Physics B Pub Date : 2024-07-17 DOI: 10.1088/1674-1056/ad6420

Anda Shi, Zeyu Wang, Chenxi Duan, Zhao Wang, Weili Zhang

引用次数: 0

Magnetoresistance hysteresis in the superconducting state of Kagome CsV3Sb5 Kagome CsV3Sb5 超导态中的磁阻滞后现象

Chinese Physics B Pub Date : 2024-07-17 DOI: 10.1088/1674-1056/ad6423

Tian Le, Jinjin Liu, Zhiwei Wang, Xiao Lin

引用次数: 0

Multiphase cooperation for multilevel strain accommodation in a single-crystalline BiFeO3 thin film 在单晶 BiFeO3 薄膜中实现多级应变容纳的多相合作

Chinese Physics B Pub Date : 2024-07-15 DOI: 10.1088/1674-1056/ad62e0

W. Choi, Bumsu Park, Jaejin Hwang, G. Han, Sang-Hyeok Yang, Hyeon Jun Lee, Sung Su Lee, J. Jo, A. Borisevich, Hu Young Jeong, Sang Ho Oh, Jaekwang Lee, Young-Min Kim

{"title":"Multiphase cooperation for multilevel strain accommodation in a single-crystalline BiFeO3 thin film","authors":"W. Choi, Bumsu Park, Jaejin Hwang, G. Han, Sang-Hyeok Yang, Hyeon Jun Lee, Sung Su Lee, J. Jo, A. Borisevich, Hu Young Jeong, Sang Ho Oh, Jaekwang Lee, Young-Min Kim","doi":"10.1088/1674-1056/ad62e0","DOIUrl":"https://doi.org/10.1088/1674-1056/ad62e0","url":null,"abstract":"\u0000 The functionalities and diverse metastable phases of multiferroic BiFeO3 (BFO) thin films depend on the misfit strain. Although mixed-phase-induced strain relaxation in multiphase BFO thin films is well known, it is unclear whether a single-crystalline BFO thin film can accommodate misfit strain without the involvement of its polymorphs. Thus, understanding the strain relaxation behavior is key to elucidating the lattice strain–property relationship. In this study, a correlative strain analysis based on dark-field inline electron holography (DIH) and quantitative scanning transmission electron microscopy (STEM) was performed to reveal the structural mechanism for strain accommodation of a single-crystalline BFO thin film. The nanoscale DIH strain analysis results indicated a random combination of multiple strain states that acted as a primary strain relief, forming irregularly strained nanodomains. The STEM-based bond length measurement of the corresponding strained nanodomains revealed a unique strain accommodation behavior achieved by a statistical combination of multiple modes of distorted structures on the unit-cell scale. The globally integrated strain for each nanodomain was estimated to be close to -1.5%, irrespective of the nanoscale strain states, which was consistent with the fully strained BFO film on the SrTiO3 substrate. Density functional theory calculations suggested that strain accommodation by the combination of metastable phases was energetically favored in relation to single-phase-mediated relaxation. This discovery allows a comprehensive understanding of strain accommodation behavior in ferroelectric oxide films, such as BFO, with various low-symmetry polymorphs.","PeriodicalId":504421,"journal":{"name":"Chinese Physics B","volume":"24 8","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141649308","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

High-quality ghost imaging based on undersampling natural order Hadamard source 基于欠采样自然阶哈达玛源的高质量鬼影成像

Chinese Physics B Pub Date : 2024-07-15 DOI: 10.1088/1674-1056/ad62e1

Kang Liu, Cheng Zhou, Jipeng Huang, Hongwu Qin, Xuan Liu, Xinwei Li, Lijun Song

引用次数: 0

Exploring Negative Ion Behaviors and Their Influence on the Properties of DC Magnetron Sputtered ITO Films under Varied Power and Pressure Conditions 探索不同功率和压力条件下的负离子行为及其对直流磁控溅射 ITO 薄膜特性的影响

Chinese Physics B Pub Date : 2024-07-15 DOI: 10.1088/1674-1056/ad62df

Maoyang Li, Chaochao Mo, P. Ji, Xiaoman Zhang, Jiali Chen, L. Zhuge, Xuemei Wu, Haiyun Tan, Tianyuan Huang

引用次数: 0

Study of the Leakage Current Degradation Based on Stacking Faults Expansion in Irradiated SiC Junction Barrier Schottky Diodes 基于堆叠故障扩展的辐照碳化硅结势垒肖特基二极管泄漏电流劣化研究

Chinese Physics B Pub Date : 2024-07-12 DOI: 10.1088/1674-1056/ad6255

Maojiu Luo, Yourun Zhang, Yucheng Wang, Hang Chen, Rong Zhou, Zhi Wang, Chao Lu, Bo Zhang

{"title":"Study of the Leakage Current Degradation Based on Stacking Faults Expansion in Irradiated SiC Junction Barrier Schottky Diodes","authors":"Maojiu Luo, Yourun Zhang, Yucheng Wang, Hang Chen, Rong Zhou, Zhi Wang, Chao Lu, Bo Zhang","doi":"10.1088/1674-1056/ad6255","DOIUrl":"https://doi.org/10.1088/1674-1056/ad6255","url":null,"abstract":"\u0000 A comprehensive investigation was conducted to explore the degradation mechanism of leakage current in SiC junction barrier Schottky (JBS) diodes under heavy ion irradiation. We propose and verify that the generation of stacking faults (SFs) induced by the recombination of massive electron-hole pairs during irradiation is the cause of reverse leakage current degradation based on experiments results. The irradiation experiment was carried out based on Ta ions with high linear energy transfer (LET) of 90.5 MeV/(mg/cm2). It is observed that the leakage current of the diode undergoes the permanent increase during irradiation when biased at 20% of the rated reverse voltage. Micro-PL spectroscopy and PL micro-imaging were utilized to detect the presence of SFs in the irradiated SiC JBS diodes. We combined the degraded performance of irradiated samples with SFs introduced by heavy ion irradiation. Finally, 3D TCAD simulation was employed to evaluate the excessive electron-hole pairs (EHPs) concentration excited by heavy ion irradiation. It was observed that the excessive hole concentration under irradiation exceeded significantly the threshold hole concentration necessary for the expansion of SFs in the substrate. The proposed mechanism suggests that the process and material characteristics of the silicon carbide should be considered in order to reinforcing against the single event effect of SiC power devices.","PeriodicalId":504421,"journal":{"name":"Chinese Physics B","volume":"36 3","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-07-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141653974","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A Large Language Model-Powered Literature Review for HighAngle Annular Dark Field Imaging 高角度环形暗场成像的大型语言模型文献综述

Chinese Physics B Pub Date : 2024-07-12 DOI: 10.1088/1674-1056/ad625c

Wenhao Yuan, Cheng Peng, Qian He

引用次数: 0