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Terahertz resonant-tunneling-diode oscillator with two offset-fed slot-ring antennas 带有两个偏置馈电槽环天线的太赫兹谐振-隧道二极管振荡器
Applied Physics Express Pub Date : 2024-03-06 DOI: 10.35848/1882-0786/ad308b
Shoei Endo, S. Suzuki
{"title":"Terahertz resonant-tunneling-diode oscillator with two offset-fed slot-ring antennas","authors":"Shoei Endo, S. Suzuki","doi":"10.35848/1882-0786/ad308b","DOIUrl":"https://doi.org/10.35848/1882-0786/ad308b","url":null,"abstract":"\u0000 We proposed and fabricated a terahertz resonant-tunneling-diode (RTD) oscillator integrated with two offset slot-ring antennas for high-output power and high-directivity radiation. In this device, the length of the antenna, approximately half the wavelength of the oscillation frequency, enables efficient terahertz radiation. The increased radiation conductance, resulting from the offset and the two slot-ring antennas, enables higher output power. Additionally, radiation directivity can be improved using two slot-ring antennas. The fabricated device generated high-power oscillation of 1.29 mW at 412 GHz. This is the highest output power of a single electronic device oscillator in the 400 GHz range.","PeriodicalId":503885,"journal":{"name":"Applied Physics Express","volume":"55 7","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-03-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140261638","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Realization of nociceptive receptors based on Mott memristors 基于莫特忆阻器的痛觉感受器的实现
Applied Physics Express Pub Date : 2024-01-17 DOI: 10.35848/1882-0786/ad1fa7
Yanji Wang, Yu Wang, Yanzhong Zhang, Xinpeng Wang, Hao Zhang, Rongqing Xu, Yi Tong
{"title":"Realization of nociceptive receptors based on Mott memristors","authors":"Yanji Wang, Yu Wang, Yanzhong Zhang, Xinpeng Wang, Hao Zhang, Rongqing Xu, Yi Tong","doi":"10.35848/1882-0786/ad1fa7","DOIUrl":"https://doi.org/10.35848/1882-0786/ad1fa7","url":null,"abstract":"\u0000 Nociceptive receptors primarily responsible for responding to potentially harmful stimuli. We designed Pt/Ag/NbOx/W memristors with threshold switching (TS) characteristic and low working voltage attribute to the diffusion of Ag ions within the device. Furthermore, this device emulates the functions of a leaky integrate-and-fire (LIF) neuron and nervous pain perception functions, respectively. The artificial neurons exhibit neural functions, including leaky integration, threshold-driven firing , self-relaxation characteristics, and allodynia, hyperalgesia of the nociceptor. The proposed threshold-switching memristor shows potential in the field of neuromorphic computing and creating intelligent systems that can replicate the complexity of the human brain.","PeriodicalId":503885,"journal":{"name":"Applied Physics Express","volume":"17 7","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-01-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139527344","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Printed organic transistors and complementary ring oscillators operatable at 200 mV 可在 200 毫伏电压下工作的印刷有机晶体管和互补环形振荡器
Applied Physics Express Pub Date : 2024-01-11 DOI: 10.35848/1882-0786/ad1db5
Masaya Yamada, Yasunori Takeda, S. Tokito, Hiroyuki Matsui
{"title":"Printed organic transistors and complementary ring oscillators operatable at 200 mV","authors":"Masaya Yamada, Yasunori Takeda, S. Tokito, Hiroyuki Matsui","doi":"10.35848/1882-0786/ad1db5","DOIUrl":"https://doi.org/10.35848/1882-0786/ad1db5","url":null,"abstract":"\u0000 Applications of organic thin-film transistors (OTFTs) include wearable health monitors and next-generation internet-of-things (IoT) systems driven by small power supply of energy-harvesting. Such application requires low voltage and low power consumption organic integrated circuits. In this paper, we demonstrate complementary integrated circuits based on printed p-type and n-type OTFTs operatable at an ultralow supply voltage of 200 mV. For that purpose, threshold voltages were finely tuned by dual-gate structure and self-assembled monolayer. Complementary inverter-based ring oscillators operated at small supply voltages down to 200 mV and exhibited a power consumption as small as 6 pW per stage.","PeriodicalId":503885,"journal":{"name":"Applied Physics Express","volume":"41 8","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-01-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139533838","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Cathodoluminescence spectral and lifetime mapping of Cs4PbBr6: fast lifetime and its scintillator application Cs4PbBr6 的阴极发光光谱和寿命图：快速寿命及其闪烁体应用
Applied Physics Express Pub Date : 2024-01-05 DOI: 10.35848/1882-0786/ad1bc4
Tetsuya Kubota, Sotatsu Yanagimoto, Hikaru Saito, Keiichirou Akiba, A. Ishii, T. Sannomiya
{"title":"Cathodoluminescence spectral and lifetime mapping of Cs4PbBr6: fast lifetime and its scintillator application","authors":"Tetsuya Kubota, Sotatsu Yanagimoto, Hikaru Saito, Keiichirou Akiba, A. Ishii, T. Sannomiya","doi":"10.35848/1882-0786/ad1bc4","DOIUrl":"https://doi.org/10.35848/1882-0786/ad1bc4","url":null,"abstract":"\u0000 Highly efficient green emission of Cs4PbBr6 has been attributed to intermediate states formed by embedded CsPbBr3 nanocrystals or defects. However, direct experimental confirmation of the presence of such nano-emitters is not straightforward and the emission mechanism remains elusive. By using cathodoluminescence imaging with a high spatial resolution, we here demonstrate that CsPbBr3 nanocrystals within the Cs4PbBr6 matrix contribute to the green emission, exhibiting optical behavior distinct from the matrix. Additionally, we explored its potential as an electron beam scintillator, given its high CL intensity and exceptionally short lifetime.","PeriodicalId":503885,"journal":{"name":"Applied Physics Express","volume":"4 11","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-01-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139380945","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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