Realization of nociceptive receptors based on Mott memristors

Abstract

Nociceptive receptors primarily responsible for responding to potentially harmful stimuli. We designed Pt/Ag/NbOx/W memristors with threshold switching (TS) characteristic and low working voltage attribute to the diffusion of Ag ions within the device. Furthermore, this device emulates the functions of a leaky integrate-and-fire (LIF) neuron and nervous pain perception functions, respectively. The artificial neurons exhibit neural functions, including leaky integration, threshold-driven firing , self-relaxation characteristics, and allodynia, hyperalgesia of the nociceptor. The proposed threshold-switching memristor shows potential in the field of neuromorphic computing and creating intelligent systems that can replicate the complexity of the human brain.