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DeepDive: Declarative Knowledge Base Construction. DeepDive:声明式知识库构建。
IF 1.1 4区 计算机科学
Sigmod Record Pub Date : 2016-03-01 Epub Date: 2016-02-06
Christopher De Sa, Alex Ratner, Christopher Ré, Jaeho Shin, Feiran Wang, Sen Wu, Ce Zhang
{"title":"DeepDive: Declarative Knowledge Base Construction.","authors":"Christopher De Sa,&nbsp;Alex Ratner,&nbsp;Christopher Ré,&nbsp;Jaeho Shin,&nbsp;Feiran Wang,&nbsp;Sen Wu,&nbsp;Ce Zhang","doi":"","DOIUrl":"","url":null,"abstract":"<p><p>The dark data extraction or knowledge base construction (KBC) problem is to populate a SQL database with information from unstructured data sources including emails, webpages, and pdf reports. KBC is a long-standing problem in industry and research that encompasses problems of data extraction, cleaning, and integration. We describe DeepDive, a system that combines database and machine learning ideas to help develop KBC systems. The key idea in DeepDive is that statistical inference and machine learning are key tools to attack classical data problems in extraction, cleaning, and integration in a unified and more effective manner. DeepDive programs are declarative in that one cannot write probabilistic inference algorithms; instead, one interacts by defining features or rules about the domain. A key reason for this design choice is to enable domain experts to build their own KBC systems. We present the applications, abstractions, and techniques of DeepDive employed to accelerate construction of KBC systems.</p>","PeriodicalId":49524,"journal":{"name":"Sigmod Record","volume":"45 1","pages":"60-67"},"PeriodicalIF":1.1,"publicationDate":"2016-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5361060/pdf/nihms826683.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"34856871","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Session details: Research center 会议详情:研究中心
IF 1.1 4区 计算机科学
Sigmod Record Pub Date : 2010-12-15 DOI: 10.1145/3264031
ÇetintemelUǧur
{"title":"Session details: Research center","authors":"ÇetintemelUǧur","doi":"10.1145/3264031","DOIUrl":"https://doi.org/10.1145/3264031","url":null,"abstract":"","PeriodicalId":49524,"journal":{"name":"Sigmod Record","volume":"1 1","pages":""},"PeriodicalIF":1.1,"publicationDate":"2010-12-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"64012289","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Session details: Reports 会话详细信息:报告
IF 1.1 4区 计算机科学
Sigmod Record Pub Date : 2010-09-27 DOI: 10.1145/3264080
B. Cooper
{"title":"Session details: Reports","authors":"B. Cooper","doi":"10.1145/3264080","DOIUrl":"https://doi.org/10.1145/3264080","url":null,"abstract":"","PeriodicalId":49524,"journal":{"name":"Sigmod Record","volume":"39 1","pages":""},"PeriodicalIF":1.1,"publicationDate":"2010-09-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"64012361","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Session details: Surveys 会议详情:调查
IF 1.1 4区 计算机科学
Sigmod Record Pub Date : 2010-09-27 DOI: 10.1145/3261697
C. Galindo-Legaria
{"title":"Session details: Surveys","authors":"C. Galindo-Legaria","doi":"10.1145/3261697","DOIUrl":"https://doi.org/10.1145/3261697","url":null,"abstract":"","PeriodicalId":49524,"journal":{"name":"Sigmod Record","volume":"39 1","pages":""},"PeriodicalIF":1.1,"publicationDate":"2010-09-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"64010288","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Cylindrical shell buckling: a characterization of localization and periodicity 圆柱壳屈曲:局部化和周期性的表征
IF 1.1 4区 计算机科学
Sigmod Record Pub Date : 2003-08-01 DOI: 10.3934/DCDSB.2003.3.505
G. Hunt, G. Lord, M. Peletier
{"title":"Cylindrical shell buckling: a characterization of localization and periodicity","authors":"G. Hunt, G. Lord, M. Peletier","doi":"10.3934/DCDSB.2003.3.505","DOIUrl":"https://doi.org/10.3934/DCDSB.2003.3.505","url":null,"abstract":"A hypothesis for the prediction of the circumferential wavenumber of buckling of the thin axially-compressed cylindrical shell is presented, based on the addition of a length effect to the classical (Koiter circle) critical load result. Checks against physical and numerical experiments, both by direct comparison of wavenumbers and via a scaling law, provide strong evidence that the hypothesis is correct.","PeriodicalId":49524,"journal":{"name":"Sigmod Record","volume":"9 1","pages":""},"PeriodicalIF":1.1,"publicationDate":"2003-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"70222019","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 88
The ρ operator ρ算子
IF 1.1 4区 计算机科学
Sigmod Record Pub Date : 2002-12-01 DOI: 10.4324/9781315251851-11
AnyanwuKemafor, ShethAmit
{"title":"The ρ operator","authors":"AnyanwuKemafor, ShethAmit","doi":"10.4324/9781315251851-11","DOIUrl":"https://doi.org/10.4324/9781315251851-11","url":null,"abstract":"In this paper, we introduce an approach that supports querying for Semantic Associations on the Semantic Web. Semantic Associations capture complex relationships between entities involving sequence...","PeriodicalId":49524,"journal":{"name":"Sigmod Record","volume":"1 1","pages":""},"PeriodicalIF":1.1,"publicationDate":"2002-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"70640449","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Session details: Industry perspectives 会议细节:行业观点
IF 1.1 4区 计算机科学
Sigmod Record Pub Date : 2002-09-01 DOI: 10.1145/3261858
Lenny M. Seligman
{"title":"Session details: Industry perspectives","authors":"Lenny M. Seligman","doi":"10.1145/3261858","DOIUrl":"https://doi.org/10.1145/3261858","url":null,"abstract":"","PeriodicalId":49524,"journal":{"name":"Sigmod Record","volume":"1 1","pages":""},"PeriodicalIF":1.1,"publicationDate":"2002-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"64010420","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Superfast fronts of impact ionization in initially unbiased layered semiconductor structures 初始无偏置层状半导体结构中撞击电离的超高速前沿
IF 1.1 4区 计算机科学
Sigmod Record Pub Date : 2002-07-30 DOI: 10.1063/1.1494113
P. Rodin, U. Ebert, W. Hundsdorfer, I. Grekhov
{"title":"Superfast fronts of impact ionization in initially unbiased layered semiconductor structures","authors":"P. Rodin, U. Ebert, W. Hundsdorfer, I. Grekhov","doi":"10.1063/1.1494113","DOIUrl":"https://doi.org/10.1063/1.1494113","url":null,"abstract":"textabstractWe present results of numerical simulations of superfast impact ionization fronts in initially unbiased layered semiconductor structures.We demonstrate that when a sufficiently sharp voltage ramp $A > 10^{12} ; { \u0000m V/s}$ is applied in the reverse directionto an initially unbiased Si $p^{+}-n-n^{+}$-structure connected in series with a load $R$, then after some delay the system will reach the high conductivity state via the propagation of a superfast impact ionization frontwhich leaves a dense electron-hole plasma behind.The front travels towards the anode with a velocity $v_f$ several times largerthan the saturated drift velocity of electrons $v_s$.The excitation of the superfast front corresponds to the transitionfrom the common avalanche breakdown of a semiconductor structure toa collective mode of streamer-like breakdown.For a structure with typical thickness of$W sim 100 ; { \u0000m mu m}$, first there is a delay of about$1 ; { \u0000m ns}$ during which the voltage reaches a value ofseveral kilovolts. Then, as the front is triggered, the voltageabruptly breaks down to several hundreds of voltswithin $sim 100 ; { \u0000m ps}$. This provides a voltage rampof up to $sim 2 cdot 10^{13}; { \u0000m V/s}$, hence up to 10times sharper than the externally applied ramp.We unravel the source of initial carriers which trigger the frontand explain the origin of the time delay in triggering the front.Further we identify the mechanism of front propagation and discussthe possibility to excite superfast ionizationfronts not in layered structures but in bulk semiconductors.","PeriodicalId":49524,"journal":{"name":"Sigmod Record","volume":"1 1","pages":""},"PeriodicalIF":1.1,"publicationDate":"2002-07-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1063/1.1494113","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"58451685","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 44
Domain-specific language design requires feature descriptions 特定于领域的语言设计需要特性描述
IF 1.1 4区 计算机科学
Sigmod Record Pub Date : 2002-03-30 DOI: 10.2498/CIT.2002.01.01
A. Deursen, P. Klint
{"title":"Domain-specific language design requires feature descriptions","authors":"A. Deursen, P. Klint","doi":"10.2498/CIT.2002.01.01","DOIUrl":"https://doi.org/10.2498/CIT.2002.01.01","url":null,"abstract":"A domain-specific language (DSL) provides a notation tailored towards an application domain and is based on the relevant concepts and features of that domain. As such, a DSL is a means to describe and generate members of a family of programs in the domain. A prerequisite for the design of a DSL is a detailed analysis and structuring of the application domain. Graphical feature diagrams have been proposed to organize the dependencies between such features, and to indicate which ones are common to all family members and which ones vary. In this paper, we study feature diagrams in more details, as well as their relationship to domain-specific languages. We propose the Feature Description Language (FDL), a textual language to describe features. We explore automated manipulation of feature descriptions such as normalization, expansion to disjunctive normal form, variability computation and constraint satisfaction. Feature descriptions can be directly mapped to UML diagrams which in their turn can be used for Java code generation. The value of FDL is assessed via a case study in the use and expressiveness of feature descriptions for the area of documentation generators.","PeriodicalId":49524,"journal":{"name":"Sigmod Record","volume":"1 1","pages":""},"PeriodicalIF":1.1,"publicationDate":"2002-03-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.2498/CIT.2002.01.01","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"69306348","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 346
Tunneling-assisted impact ionization fronts in semiconductors 半导体中隧道辅助冲击电离前沿
IF 1.1 4区 计算机科学
Sigmod Record Pub Date : 2001-11-15 DOI: 10.1063/1.1486258
P. Rodin, U. Ebert, W. Hundsdorfer, I. Grekhov
{"title":"Tunneling-assisted impact ionization fronts in semiconductors","authors":"P. Rodin, U. Ebert, W. Hundsdorfer, I. Grekhov","doi":"10.1063/1.1486258","DOIUrl":"https://doi.org/10.1063/1.1486258","url":null,"abstract":"We discuss a type of ionization front in layered semiconductor structures. The propagation is due to the interplay of band-to-band tunneling and impact ionization. Our numerical simulations show that the front can be triggered when an extremely sharp voltage ramp (∼10 kV/ns) is applied in reverse direction to a Si p+–n–n+ structure that is connected in series with an external load. The triggering occurs after a delay of 0.7 to 0.8 ns. The maximal electrical field at the front edge exceeds 106 V/cm. The front velocity vf is 40 times faster than the saturated drift velocity vs. The front passes through the n-base with a thickness of 100 μm within approximately 30 ps, filling it with dense electron–hole plasma. This passage is accompanied by a voltage drop from 8 kV to a voltage in the order of 10 V. In this way a voltage pulse with a ramp up to 500 kV/ns can be applied to the load. The possibility to create a kilovolt pulse with such a voltage rise rate sets new frontiers in pulse power electronics.","PeriodicalId":49524,"journal":{"name":"Sigmod Record","volume":"1 1","pages":""},"PeriodicalIF":1.1,"publicationDate":"2001-11-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1063/1.1486258","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"58440358","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 48
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