Nano-Micro Letters最新文献_第8页

Correction to: Stable Zn Metal Anodes with Limited Zn-Doping in MgF2 Interphase for Fast and Uniformly Ionic Flux 修正:稳定的锌金属阳极与有限的锌掺杂在MgF2界面快速和均匀的离子通量

IF 26.6 1区材料科学

Nano-Micro Letters Pub Date : 2022-03-04 DOI: 10.1007/s40820-022-00814-8

Ji Young Kim, Guicheng Liu, Ryanda Enggar Anugrah Ardhi, Jihun Park, Hansung Kim, Joong Kee Lee

引用次数: 1

Surface Treatment of Inorganic CsPbI3 Nanocrystals with Guanidinium Iodide for Efficient Perovskite Light-Emitting Diodes with High Brightness 用碘化胍处理无机CsPbI3纳米晶体制备高效高亮度钙钛矿发光二极管

IF 26.6 1区材料科学

Nano-Micro Letters Pub Date : 2022-03-02 DOI: 10.1007/s40820-022-00813-9

Minh Tam Hoang, Amandeep Singh Pannu, Yang Yang, Sepideh Madani, Paul Shaw, Prashant Sonar, Tuquabo Tesfamichael, Hongxia Wang

{"title":"Surface Treatment of Inorganic CsPbI3 Nanocrystals with Guanidinium Iodide for Efficient Perovskite Light-Emitting Diodes with High Brightness","authors":"Minh Tam Hoang, Amandeep Singh Pannu, Yang Yang, Sepideh Madani, Paul Shaw, Prashant Sonar, Tuquabo Tesfamichael, Hongxia Wang","doi":"10.1007/s40820-022-00813-9","DOIUrl":"10.1007/s40820-022-00813-9","url":null,"abstract":"<div><p>The remarkable evolution of metal halide perovskites in the past decade makes them promise for next-generation optoelectronic material. In particular, nanocrystals (NCs) of inorganic perovskites have demonstrated excellent performance for light-emitting and display applications. However, the presence of surface defects on the NCs negatively impacts their performance in devices. Herein, we report a compatible facial post-treatment of CsPbI<sub>3</sub> nanocrystals using guanidinium iodide (GuI). It is found that the GuI treatment effectively passivated the halide vacancy defects on the surface of the NCs while offering effective surface protection and exciton confinement thanks to the beneficial contribution of iodide and guanidinium cation. As a consequence, the film of treated CsPbI<sub>3</sub> nanocrystals exhibited significantly enhanced luminescence and charge transport properties, leading to high-performance light-emitting diode with maximum external quantum efficiency of 13.8% with high brightness (peak luminance of 7039 cd m<sup>−2</sup> and a peak current density of 10.8 cd A<sup>−1</sup>). The EQE is over threefold higher than performance of untreated device (EQE: 3.8%). The operational half-lifetime of the treated devices also was significantly improved with T<sub>50</sub> of 20 min (at current density of 25 mA cm<sup>−2</sup>), outperforming the untreated devices (T<sub>50</sub> ~ 6 min). \u0000</p><figure><div><div><div><picture><source><img></source></picture></div></div></div></figure></div>","PeriodicalId":48779,"journal":{"name":"Nano-Micro Letters","volume":null,"pages":null},"PeriodicalIF":26.6,"publicationDate":"2022-03-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s40820-022-00813-9.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"4095431","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 19

Architecture Design and Interface Engineering of Self-assembly VS4/rGO Heterostructures for Ultrathin Absorbent 超薄吸收材料自组装VS4/rGO异质结构的结构设计与界面工程

IF 26.6 1区材料科学

Nano-Micro Letters Pub Date : 2022-02-25 DOI: 10.1007/s40820-022-00809-5

Qi Li, Xuan Zhao, Zheng Zhang, Xiaochen Xun, Bin Zhao, Liangxu Xu, Zhuo Kang, Qingliang Liao, Yue Zhang

{"title":"Architecture Design and Interface Engineering of Self-assembly VS4/rGO Heterostructures for Ultrathin Absorbent","authors":"Qi Li, Xuan Zhao, Zheng Zhang, Xiaochen Xun, Bin Zhao, Liangxu Xu, Zhuo Kang, Qingliang Liao, Yue Zhang","doi":"10.1007/s40820-022-00809-5","DOIUrl":"10.1007/s40820-022-00809-5","url":null,"abstract":"<div><p>The employment of microwave absorbents is highly desirable to address the increasing threats of electromagnetic pollution. Importantly, developing ultrathin absorbent is acknowledged as a linchpin in the design of lightweight and flexible electronic devices, but there are remaining unprecedented challenges. Herein, the self-assembly VS<sub>4</sub>/rGO heterostructure is constructed to be engineered as ultrathin microwave absorbent through the strategies of architecture design and interface engineering. The microarchitecture and heterointerface of VS<sub>4</sub>/rGO heterostructure can be regulated by the generation of VS<sub>4</sub> nanorods anchored on rGO, which can effectively modulate the impedance matching and attenuation constant. The maximum reflection loss of 2VS<sub>4</sub>/rGO40 heterostructure can reach − 43.5 dB at 14 GHz with the impedance matching and attenuation constant approaching 0.98 and 187, respectively. The effective absorption bandwidth of 4.8 GHz can be achieved with an ultrathin thickness of 1.4 mm. The far-reaching comprehension of the heterointerface on microwave absorption performance is explicitly unveiled by experimental results and theoretical calculations. Microarchitecture and heterointerface synergistically inspire multi-dimensional advantages to enhance dipole polarization, interfacial polarization, and multiple reflections and scatterings of microwaves. Overall, the strategies of architecture design and interface engineering pave the way for achieving ultrathin and enhanced microwave absorption materials.</p><figure><div><div><div><picture><source><img></source></picture></div></div></div></figure></div>","PeriodicalId":48779,"journal":{"name":"Nano-Micro Letters","volume":null,"pages":null},"PeriodicalIF":26.6,"publicationDate":"2022-02-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s40820-022-00809-5.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"4964053","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 29

A Better Zn-Ion Storage Device: Recent Progress for Zn-Ion Hybrid Supercapacitors 一种更好的锌离子存储装置:锌离子混合超级电容器的最新进展

IF 26.6 1区材料科学

Nano-Micro Letters Pub Date : 2022-02-23 DOI: 10.1007/s40820-022-00793-w

Jialun Jin, Xiangshun Geng, Qiang Chen, Tian-Ling Ren

引用次数: 53

Ni Flower/MXene-Melamine Foam Derived 3D Magnetic/Conductive Networks for Ultra-Efficient Microwave Absorption and Infrared Stealth Ni花/ mxene -三聚氰胺泡沫衍生的超高效微波吸收和红外隐身3D磁/导电网络

IF 26.6 1区材料科学

Nano-Micro Letters Pub Date : 2022-02-21 DOI: 10.1007/s40820-022-00812-w

Haoran Cheng, Yamin Pan, Xin Wang, Chuntai Liu, Changyu Shen, Dirk W. Schubert, Zhanhu Guo, Xianhu Liu

引用次数: 6

Functionalized Fiber-Based Strain Sensors: Pathway to Next-Generation Wearable Electronics 功能化纤维应变传感器:通往下一代可穿戴电子产品的途径