2022 IEEE Texas Symposium on Wireless and Microwave Circuits and Systems (WMCS)最新文献

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Coherent Visible Femtosecond Supercontinuum in Dispersion-Tailored Photonic Crystal Fiber 色散定制光子晶体光纤中的相干可见飞秒超连续谱
2022 IEEE Texas Symposium on Wireless and Microwave Circuits and Systems (WMCS) Pub Date : 2022-04-19 DOI: 10.1109/WMCS55582.2022.9866312
Chengli Wei, Feng Han, Jonathan Hu, Jindan Shi, Xian Feng
{"title":"Coherent Visible Femtosecond Supercontinuum in Dispersion-Tailored Photonic Crystal Fiber","authors":"Chengli Wei, Feng Han, Jonathan Hu, Jindan Shi, Xian Feng","doi":"10.1109/WMCS55582.2022.9866312","DOIUrl":"https://doi.org/10.1109/WMCS55582.2022.9866312","url":null,"abstract":"We report efficient visible supercontinuum (SC) generated from a dispersion-tailored air-suspended-core photonic crystal fiber, using an 800-nm Ti:sapphire laser with a pulse duration of ~29 fs and a repetition rate of 80 MHz. The conversion efficiency of pump-to-visible SC has been measured to be as high as 29 % in a 10-cm long fiber, with the visible SC power of 28.4 mW. The spectral interference measurement indicates that the generated SC possesses a high degree of coherence greater than 0.91, which is supported by the numerical simulations. The highly coherent SC is due to the combination of ultrafast femtosecond pump, dispersion–tailored photonic crystal fiber, and the ultra-high shot-to-shot phase stability of the pump.","PeriodicalId":447341,"journal":{"name":"2022 IEEE Texas Symposium on Wireless and Microwave Circuits and Systems (WMCS)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128302551","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Effects of Strain Relief Loop on MRI RF-Induced Heating of Active Implantable Medical Devices 应变缓解回路对有源植入式医疗器械MRI射频加热的影响
2022 IEEE Texas Symposium on Wireless and Microwave Circuits and Systems (WMCS) Pub Date : 2022-04-19 DOI: 10.1109/WMCS55582.2022.9866160
Mir Khadiza Akter, Ran Guo, Md. Zahidul Islam, Jianfeng Zheng, Ji Chen
{"title":"Effects of Strain Relief Loop on MRI RF-Induced Heating of Active Implantable Medical Devices","authors":"Mir Khadiza Akter, Ran Guo, Md. Zahidul Islam, Jianfeng Zheng, Ji Chen","doi":"10.1109/WMCS55582.2022.9866160","DOIUrl":"https://doi.org/10.1109/WMCS55582.2022.9866160","url":null,"abstract":"This paper discusses the effects of strain relief loops on the RF-induced heating of Active Implantable Medical Devices (AIMDs) during an MRI procedure. A method to estimate the effect of the strain relief loop location on the AIMD heating is developed based on the differentiation of cumulative summation (DCS) of the product between the transfer function and the tangential component of the electric field along the device length. Placing a loop at the peak location of DCS can significantly reduce the heating while placing the loop at the nulls of the DCS would lead to a higher temperature rise. Numerical simulations and experimental validations are performed to demonstrate this method.","PeriodicalId":447341,"journal":{"name":"2022 IEEE Texas Symposium on Wireless and Microwave Circuits and Systems (WMCS)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133352677","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Achieving Near-Constant Beamwidth and Symmetry in Patterns of the Pyramidal Ridged Horn Antenna for UAV-Based In-situ Characterization and Measurement of Phased Array Radars 在基于无人机的相控阵雷达的原位表征和测量中实现金字塔脊喇叭天线近恒定波束宽度和图案对称性
2022 IEEE Texas Symposium on Wireless and Microwave Circuits and Systems (WMCS) Pub Date : 2022-04-19 DOI: 10.1109/WMCS55582.2022.9866229
S. S. Jehangir, J. Salazar-Cerreno
{"title":"Achieving Near-Constant Beamwidth and Symmetry in Patterns of the Pyramidal Ridged Horn Antenna for UAV-Based In-situ Characterization and Measurement of Phased Array Radars","authors":"S. S. Jehangir, J. Salazar-Cerreno","doi":"10.1109/WMCS55582.2022.9866229","DOIUrl":"https://doi.org/10.1109/WMCS55582.2022.9866229","url":null,"abstract":"To take benefit from the wide bandwidth operation of the ridged horn antennas and to overcome its limitation of wider beamwidth performance at low frequencies, we propose two techniques that are used to reduce the H-plane beamwidth of the ridged horn antenna from 2 GHz to 12 GHz. For Unmanned Aerial Vehicles (UAVs) based in-situ characterization and measurement of radars, it is usually desired that the probe has narrow beamwidth as well as overall symmetric radiation patterns so that the antenna performance is not degraded due to the back-scattering from the drone structure. This is verified from the measured results that at low frequencies, when the beamwidth is wider, the fields strongly interact with the drone platform thus induces ripples in the co-polar patterns and also increases the cross-polarization levels, especially in the H-plane. To overcome this limitation, two techniques are discussed in this work. The first technique involves the integration of a wideband multi-layer dielectric lens structure with a ridged horn antenna. In the second technique, corrugations are introduced to reduce the H-plane beamwidth for the entire band of operation. Both lens and corrugations reduce the H-plane half-power beamwidth (HPBW) by around 70% (for instance at 3 GHz) and show almost similar performance within the entire frequency band. However, compared to the corrugation technique, integrating a the dielectric lens will further increase the weight of the probe and would thus degrade the flight performance of the drone due to its payload limitations. Moreover, dielectric materials are lossy and fabrication and integration of the multi-layer lens can be challenging. In such a case, using corrugations to reduce the beamwidth can be a useful technique.","PeriodicalId":447341,"journal":{"name":"2022 IEEE Texas Symposium on Wireless and Microwave Circuits and Systems (WMCS)","volume":"111 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123127030","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
An 18.7 – 42.0 GHz Broadband Adaptively Biased Power Amplifier in 22-nm CMOS FD-SOI 基于22纳米CMOS FD-SOI的18.7 - 42.0 GHz宽带自适应偏置功率放大器
2022 IEEE Texas Symposium on Wireless and Microwave Circuits and Systems (WMCS) Pub Date : 2022-04-19 DOI: 10.1109/WMCS55582.2022.9866339
C. Sweeney, J. Mayeda, D. Lie, Jerry Lopez
{"title":"An 18.7 – 42.0 GHz Broadband Adaptively Biased Power Amplifier in 22-nm CMOS FD-SOI","authors":"C. Sweeney, J. Mayeda, D. Lie, Jerry Lopez","doi":"10.1109/WMCS55582.2022.9866339","DOIUrl":"https://doi.org/10.1109/WMCS55582.2022.9866339","url":null,"abstract":"The design of a broadband millimeter-wave (mm-Wave) power amplifier (PA) that utilizes an adaptive biasing network to improve its power-added-efficiency (PAE) in power backoff is discussed. This design is implemented in a 22-nm CMOS fully depleted silicon-on-insulator (FD-SOI) technology, and it aims to cover the key fifth-generation (5G) FR2 band (e.g., from 24.25 GHz to 43.5 GHz). This PA has 3-dB bandwidth (BW) extending from 18.8 – 41.9 GHz, and is able to achieve enhanced output 1-dB compression point (OP1dB) and PAE@P1dB because of its adaptive biasing network. Measurements taken on this PA at 24/28/37/39 GHz have reached max. PAE of 23.7/15/9.5/6.8%, and saturated output power (POUT,sat) of 15.7/14.2/12.5/11.2 dBm, with OP1dB of 13.6/12.2/11.8/10.6 dBm, and PAE@P1dB of 22/14.1/9.3/6.6%. These measurement results are compared with post-layout parasitic-extraction (PEX) simulations, and also against other novel silicon mm-Wave PAs in literature.","PeriodicalId":447341,"journal":{"name":"2022 IEEE Texas Symposium on Wireless and Microwave Circuits and Systems (WMCS)","volume":"121 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124410115","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Differential Cancellation Based RF Switch Enabling High Isolation and Minimal Insertion Loss in 0.0006 mm2 Area 基于差分抵消的射频开关,在0.0006 mm2面积内实现高隔离和最小插入损耗
2022 IEEE Texas Symposium on Wireless and Microwave Circuits and Systems (WMCS) Pub Date : 2022-04-01 DOI: 10.1109/WMCS55582.2022.9866179
Travis Forbes, J. Saugen, Benjamin Magstadt
{"title":"Differential Cancellation Based RF Switch Enabling High Isolation and Minimal Insertion Loss in 0.0006 mm2 Area","authors":"Travis Forbes, J. Saugen, Benjamin Magstadt","doi":"10.1109/WMCS55582.2022.9866179","DOIUrl":"https://doi.org/10.1109/WMCS55582.2022.9866179","url":null,"abstract":"An RF switch technique applying differential signal cancellation is presented. The proposed approach enables high isolation and extremely small size by employing cascode current steering within a differential amplifier. Unlike series RF switches, isolation is limited by device mismatch, not switch parasitic capacitance, enabling high frequency operation. Since the switch is within the already present cascode devices, there is no additional insertion loss from the switch. The switch was implemented in a 180 nm CMOS process within an amplifier as part of an on-chip receiver and achieves 36–43 dB isolation across 0.5–2 GHz, while occupying an area of only 0.0006 mm2.","PeriodicalId":447341,"journal":{"name":"2022 IEEE Texas Symposium on Wireless and Microwave Circuits and Systems (WMCS)","volume":"853 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128064423","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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