{"title":"Temperature and time dependent finite-element model of a thermoelectric couple","authors":"P. G. Lau, R. Buist","doi":"10.1109/ICT.1996.553305","DOIUrl":"https://doi.org/10.1109/ICT.1996.553305","url":null,"abstract":"The cooling performance of a thermoelectric (TE) couple is modeled from mathematical differential equations via finite-elements with the use of a digital computer. The finite-element model, which incorporates material property dependence on time and temperature, is presented. TE couple transient performance is investigated by applying an on-off current waveform to the model. Results from the model output are compared with experiment.","PeriodicalId":447328,"journal":{"name":"Fifteenth International Conference on Thermoelectrics. Proceedings ICT '96","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1996-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115831557","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Thermoelectric coolers with small response time","authors":"V. A. Semeniouk, T. Pilipenko","doi":"10.1109/ICT.1996.553496","DOIUrl":"https://doi.org/10.1109/ICT.1996.553496","url":null,"abstract":"A method of evaluation of cascade thermoelectric cooler transient response is described. To check the theoretical model, experimental research on a wide range of single-stage and multi-stage TE coolers was carried out. Fast response coolers, providing an achievement of 90% of steady-state temperature difference for times from 1.2 to 6.2 s, have been developed. The limit speed of thermal response for cascade coolers is also predicted.","PeriodicalId":447328,"journal":{"name":"Fifteenth International Conference on Thermoelectrics. Proceedings ICT '96","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1996-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114141257","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
K. Matsubara, T. Sakakibara, Y. Notohara, H. Anno, H. Shimizu, T. Koyanagi
{"title":"Electronic transport properties of the Skutterudite CoSb3 and mixed alloys","authors":"K. Matsubara, T. Sakakibara, Y. Notohara, H. Anno, H. Shimizu, T. Koyanagi","doi":"10.1109/ICT.1996.553264","DOIUrl":"https://doi.org/10.1109/ICT.1996.553264","url":null,"abstract":"We present some results on physical and electrical properties of the Skutterudites CoSb/sub 3/ and mixed alloys. Most of samples measured were polycrystalline, which have been prepared by hot-pressing of powders under 10/sup 7/ Pa at /spl sim/650/spl deg/C and /spl sim/750/spl deg/C, and a few measurements on CoSb/sub 3/ single crystals were performed. We report some results of the Hall mobility, Seebeck coefficient and electrical conductivity measurements on CoSb/sub 3/ and mixed alloys. Based on the experimental results, we make clear important factors which have influence on the electronic transport properties, in particular, on the Hall mobility of the materials.","PeriodicalId":447328,"journal":{"name":"Fifteenth International Conference on Thermoelectrics. Proceedings ICT '96","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1996-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123426606","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Z. Dashevsky, S. Ashmontas, L. Vingelis, I. Gradauskas, A. Kasian
{"title":"The thermoelectric power on p-n junction","authors":"Z. Dashevsky, S. Ashmontas, L. Vingelis, I. Gradauskas, A. Kasian","doi":"10.1109/ICT.1996.553503","DOIUrl":"https://doi.org/10.1109/ICT.1996.553503","url":null,"abstract":"Measurements of thermo-EMF were performed on sharp PbTe p-n junctions with doping layer depth by order of diffusion length of minority carriers in the temperature range from 300 to 80 K. The barrier thermo-EMF Vb effect results in sharp output signal increase at low temperature. Moreover, the sign of Vb is opposite to the sign of volume thermo-EMF. The barrier thermo-EMF may be explained by thermodiffusion nonequilibrium carriers and its separation on the p-n junction. However the difference Vb from photo-EMF is an opposite sign at n- and p-ranges. In this case the observation of Vb was enabled by producing /spl Delta/T only at n-range (the absorption of short laser pulse and free carriers at surface layer). At short pulse (CO/sub 2/-laser /spl lambda/=10.6 /spl mu/m, /spl tau/=200 nsec) increase of output signal practically repeated the form of the laser pulse, i.e., irradiation absorption of free carriers and its interaction with lattice (heat of phonon system) is acting without inertion. At the same time we observed very slow decrease in signal V (/spl mu/sec and more) after switch off connecting with inertion of phonon system cooling. This memory effect of V differs from the response of photo-EMF and may be very useful for concrete applications (for example measurement of power for short laser pulse).","PeriodicalId":447328,"journal":{"name":"Fifteenth International Conference on Thermoelectrics. Proceedings ICT '96","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1996-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121551203","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Thermal management of power electronics using thermoelectric coolers","authors":"J. Vandersande, J. Fleurial","doi":"10.1109/ICT.1996.553311","DOIUrl":"https://doi.org/10.1109/ICT.1996.553311","url":null,"abstract":"Many high power electronic devices, such as power amplifies and multiprocessors, operate at high temperatures close to or at the edge of their reliability, which could severely impact performance and operating lifetime. These devices thus need cooling to improve performance and reliability. Conventional thermal management techniques, most of which are discussed, are not well suited to the specific problem of cooling discrete or localized heat dissipating devices since they generally cool the whole board. Moreover, these techniques have difficulty dealing with the large heat fluxes associated with the high density packaging of power devices. The specific problem of spot cooling of power devices can be very effectively solved by using the combination of diamond substrates and a thermoelectric cooler. The highest power components would be mounted directly on a diamond substrate (ideally the top substrate of the cooler) allowing the cooler/diamond combination to maintain the temperature of the device from a few degrees to tens of degrees below that of the substrate on which the cooler is mounted (diamond or any other high thermal conductivity material). This will allow the device to operate at a low enough temperature to increase both reliability and clockspeed. It has been determined that the highest cooling power densities will be achieved with thin film coolers with cooler leg lengths on the order of 20 to 50 microns. The results of a solid state power amplifier (MMIC) cooled using a diamond/cooler combination are presented and discussed.","PeriodicalId":447328,"journal":{"name":"Fifteenth International Conference on Thermoelectrics. Proceedings ICT '96","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1996-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121576658","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"A new concept of porous thermoelectric module using a reciprocating flow for cooling/heating system","authors":"S. Tada, Ryozo Echigo, H. Yoshida","doi":"10.1109/ICT.1996.553315","DOIUrl":"https://doi.org/10.1109/ICT.1996.553315","url":null,"abstract":"This paper presents the conceptual design of a novel thermoelectric cooler and/or heater utilizing the heat transfer effect due to forced convection. A porous thermoelectric converter combined with a reciprocating flow system in which the flow direction of air passing through the element is reversed after regular intervals is proposed. This flow system in effect makes the thermal conductivity insignificant and contributes toward the achievement of a high efficient cooler and/or heater. For the first phase, a one-dimensional numerical analysis is performed to examine the detailed characteristics of the device by systematically varying the relevant thermo-fluid parameters. In particular, the flow velocity and the porosity of the thermoelectric elements are the most important parameters which directly affect the system performance. For example in a porous thermoelectric cooler, the lowest temperature of air is approximately -20/spl deg/C for an ambient temperature of 27/spl deg/C, which is attained with a flow velocity u=0.35 m/s, a material porosity /spl epsiv/=0.5, and 2.5 cm thick thermoelectric elements. As a notable feature, the temperature of the cooling section of the system varies considerably with the velocity, and it attains a minimum at u=0.35 m/s. Subsequently, on the basis of the proposed cooling system, an extended concept aimed to realize commercial coolers and/or heaters is briefly discussed.","PeriodicalId":447328,"journal":{"name":"Fifteenth International Conference on Thermoelectrics. Proceedings ICT '96","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1996-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116598456","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Thermoelectric figure of merit of Si-Ge multilayered thin films","authors":"A. Yamamoto, T. Ohta","doi":"10.1109/ICT.1996.553528","DOIUrl":"https://doi.org/10.1109/ICT.1996.553528","url":null,"abstract":"The electrical conductivity /spl sigma/, the Seebeck coefficient /spl alpha/, the thermal conductivity /spl kappa/ and the figure of merit ZT (Z=/spl sigma/ /spl alpha//sup 2///spl kappa/) were calculated theoretically for multilayered thin film with quantum wells (QWs) made of Si, Si/sub 70/Ge/sub 30/ and silicide thermoelectric materials. Two-dimensional transport model for single band semiconductor was applied to these materials. As results of the calculation it is found that carrier confinement by QWs mainly have effects on increasing the carrier energy and on shifting optimizing point of power factor /spl sigma/ /spl alpha//sup 2/. The calculated figure of merit for modulated doping Si/sub 70/Ge/sub 30/ QWs was the same as that of bulk material at 300 K. Modulated doping silicide QWs had larger figure of merit than that of Si/sub 70/Ge/sub 30/ QWs.","PeriodicalId":447328,"journal":{"name":"Fifteenth International Conference on Thermoelectrics. Proceedings ICT '96","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1996-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132135896","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Thermoelectricity applied to the cryoconcentration of orange juice","authors":"M. A. Sanz-Bobi, R. Palacios, A. Arenas","doi":"10.1109/ICT.1996.553314","DOIUrl":"https://doi.org/10.1109/ICT.1996.553314","url":null,"abstract":"The high content of water in natural fruit juices suggests the reduction of their volume by its elimination. This is a concentration process for juices that saves space and reduces costs for storage, transport and handling. This paper describes the main features of a prototype of a \"cryoconcentration cell\" for obtaining concentrated orange juice. This development is being supported by a research project within the program of the CICYT, a Spanish Government Agency to promote R&D activities. The prototype proposes the use of the Peltier effect as an alternative to the traditional methods of cryoconcentration using the aforementioned conventional techniques. The cryoconcentration cell uses a set of thermoelectric elements to produce the cooling conditions able to convert the excess of water included in the juice into ice so that later it is possible to eliminate it and to concentrate the juice. The orange juice is the hot sink in our application. The heat extracted from the orange juice is transferred to water in circulation, which is the cool sink. A first prototype of this cell was constructed in aluminium. From this experience another prototype was constructed in copper which is an improvement over the first one. Both prototypes of cryoconcentration cells use 16 thermoelectric elements on both main sides of the recipient that temporarily contains the juice. A detailed description of the last prototype, its design and some initial results obtained are presented in this paper.","PeriodicalId":447328,"journal":{"name":"Fifteenth International Conference on Thermoelectrics. Proceedings ICT '96","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1996-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132125499","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A. Burkov, A. Heinrich, C. Gladun, W. Pitschke, J. Schumann
{"title":"Structure and thermoelectric properties of nano-crystalline Rex-Si1-x thin film composites","authors":"A. Burkov, A. Heinrich, C. Gladun, W. Pitschke, J. Schumann","doi":"10.1109/ICT.1996.553532","DOIUrl":"https://doi.org/10.1109/ICT.1996.553532","url":null,"abstract":"In this report results on phase formation and transport properties of amorphous and nano-crystalline Re-Si thin films are presented. The results imply that the partially crystallized Re-Si films, i.e. films consisting of amorphous and nano-crystalline phases form a new class of heterostructures which are essentially different from binary insulator-metal mixtures. We have found that the resistivity and thermopower of the heterogeneous films consisting of amorphous and nano-crystalline phases do not follow the well known effective medium approximation when the ratio between these two phases is varied. Both phase composition and crystalline grain size appear to be important parameters for the thermoelectric material optimization.","PeriodicalId":447328,"journal":{"name":"Fifteenth International Conference on Thermoelectrics. Proceedings ICT '96","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1996-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123053591","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Thermoelectric properties of sintered magnesium compounds","authors":"T. Kajikawa, I. Katsube, S. Sugihara, K. Soejima","doi":"10.1109/ICT.1996.553271","DOIUrl":"https://doi.org/10.1109/ICT.1996.553271","url":null,"abstract":"The thermoelectric properties of the sintered magnesium compounds such as magnesium silicide and magnesium stannide have been researched in order to apply to a thermoelectric power generation system using combustion heat of municipal solid waste. Temperature dependencies of thermoelectric properties such as Seebeck coefficient, electrical resistivity and thermoelectric power factor are measured for the temperature range from 300 K to 770 K. The non-dimensional figure-of-merit for the sintered magnesium silicide is obtained about 0.4 at 600 K in the initial stage. The durability of magnesium compound elements is also discussed.","PeriodicalId":447328,"journal":{"name":"Fifteenth International Conference on Thermoelectrics. Proceedings ICT '96","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1996-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129305144","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}