2011 IEEE Workshop on Microelectronics and Electron Devices最新文献

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Structural study of Ag-Ge-S solid electrolyte glass system for resistive radiation sensing 电阻辐射传感用Ag-Ge-S固体电解质玻璃体系结构研究
2011 IEEE Workshop on Microelectronics and Electron Devices Pub Date : 2011-04-22 DOI: 10.1109/WMED.2011.5767271
Ping-Han Chen, M. Ailavajhala, M. Mitkova, D. Tenne, I. Esqueda, H. Barnaby
{"title":"Structural study of Ag-Ge-S solid electrolyte glass system for resistive radiation sensing","authors":"Ping-Han Chen, M. Ailavajhala, M. Mitkova, D. Tenne, I. Esqueda, H. Barnaby","doi":"10.1109/WMED.2011.5767271","DOIUrl":"https://doi.org/10.1109/WMED.2011.5767271","url":null,"abstract":"Solid electrolytes based on chalcogenide glasses have been one of the most promising candidates for the next generation non-volatile memories. Here we propose a new application of chalcogenide solid electrolytes for low cost, high performance microelectronic radiation sensor that reacts to γ-radiation to produce an easily measurable change in electrical resistance. The active layer material is Ag-doped GeS thin film glasses and several compositions of GeS base glasses were tested for best resistive sensing capability. Energy-dispersive X-ray spectroscopy (EDS) was used for elemental analysis and Raman scattering spectroscopy was measured to determine the structural details and radiation induced structural changes. We also present initial electrical measurement results with test devices.","PeriodicalId":443024,"journal":{"name":"2011 IEEE Workshop on Microelectronics and Electron Devices","volume":"18 5","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-04-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120991031","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Friction based endpoint technique for barrier polish during copper CMP 铜CMP过程中基于摩擦端点的屏障抛光技术
2011 IEEE Workshop on Microelectronics and Electron Devices Pub Date : 2011-04-22 DOI: 10.1109/WMED.2011.5767272
S. Zhu, Jim Hofmann, A. Jindal
{"title":"Friction based endpoint technique for barrier polish during copper CMP","authors":"S. Zhu, Jim Hofmann, A. Jindal","doi":"10.1109/WMED.2011.5767272","DOIUrl":"https://doi.org/10.1109/WMED.2011.5767272","url":null,"abstract":"A novel method has been introduced to provide a clear endpoint signal for copper CMP barrier polish with minimal time delay as compared to conventional endpoint. A modified power sensor is installed on a 300mm polisher to measure the torque generated by the platen motor with an improved signal to noise ratio. An Extended Kalman filter (EKF) is integrated to the software to extract the friction signals while discarding the sinusoidal components due to carrier head and platen movement, and reveal clear friction endpoint. The intensity of signal is improved by changes in process and/or slurry parameters. The technique is validated by using blanket barrier films as well as patterned wafers.","PeriodicalId":443024,"journal":{"name":"2011 IEEE Workshop on Microelectronics and Electron Devices","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-04-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132079666","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Self-calibrating continuous-time equalization with multiple degrees of freedom 具有多个自由度的自校准连续时间均衡
2011 IEEE Workshop on Microelectronics and Electron Devices Pub Date : 2011-04-22 DOI: 10.1109/WMED.2011.5767276
T. Hollis
{"title":"Self-calibrating continuous-time equalization with multiple degrees of freedom","authors":"T. Hollis","doi":"10.1109/WMED.2011.5767276","DOIUrl":"https://doi.org/10.1109/WMED.2011.5767276","url":null,"abstract":"A method for designing self-calibrating continuous-time equalizers is proposed. A pair of error terms, derived from the channel pulse response, may be used to adaptively calibrate the equalizer, resulting in a significant reduction of inter-symbol interference (ISI). Matlab simulations show the clear opening of a twenty Gigabit/second (Gb/s) data eye at the end of a six inch FR4-based signal route.","PeriodicalId":443024,"journal":{"name":"2011 IEEE Workshop on Microelectronics and Electron Devices","volume":"86 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-04-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117291478","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Optimized Germanium co-implant with B2H6 PLAD for better advanced PMOS device performance 优化锗与B2H6 PLAD共植体,提高PMOS器件性能
2011 IEEE Workshop on Microelectronics and Electron Devices Pub Date : 2011-04-22 DOI: 10.1109/WMED.2011.5767280
J. Liu, S. Qin, Jeff Y. Hu, A. Mcteer
{"title":"Optimized Germanium co-implant with B2H6 PLAD for better advanced PMOS device performance","authors":"J. Liu, S. Qin, Jeff Y. Hu, A. Mcteer","doi":"10.1109/WMED.2011.5767280","DOIUrl":"https://doi.org/10.1109/WMED.2011.5767280","url":null,"abstract":"This work demonstrates that the sequence of a Ge co-implant with a B<inf>2</inf>H<inf>6</inf> PLAD in the source/drain is very critical in order to improve advanced PMOS performance. Locating the Ge co-implant after the B<inf>2</inf>H<inf>6</inf> PLAD resulted in higher total retained B dose and less implant damage. PMOS performance was significantly improved compared to B<inf>2</inf>H<inf>6</inf> PLAD without the Ge co-implant or Ge co-implant before B<inf>2</inf>H<inf>6</inf> PLAD. The Ge implant energy was optimized to locate the Ge peak around the B deposition layer/Si substrate interface for a better knocking effect and less implant damage. With the optimized Ge implant conditions the source/drain contact resistance and sheet resistance were significantly reduced, while the junction leakage current was not degraded. As a result, PMOS I<inf>ds</inf> improved by 12%, transconductance KL improved by 14%, and I<inf>OFF</inf> variation improved by 33% without significant change in mean I<inf>OFF</inf>. This process helps overcome technical challenges of B<inf>2</inf>H<inf>6</inf> PLAD, providing a path for continued scaling of PMOS junction depth with improved device performance.","PeriodicalId":443024,"journal":{"name":"2011 IEEE Workshop on Microelectronics and Electron Devices","volume":"2015 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-04-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128710831","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Copyright page 版权页
2011 IEEE Workshop on Microelectronics and Electron Devices Pub Date : 1989-07-01 DOI: 10.23919/pnc.2018.8579444
{"title":"Copyright page","authors":"","doi":"10.23919/pnc.2018.8579444","DOIUrl":"https://doi.org/10.23919/pnc.2018.8579444","url":null,"abstract":"","PeriodicalId":443024,"journal":{"name":"2011 IEEE Workshop on Microelectronics and Electron Devices","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133551071","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Welcome to the 2011 IEEE WMED 欢迎来到2011年IEEE世界医学大会
2011 IEEE Workshop on Microelectronics and Electron Devices Pub Date : 1900-01-01 DOI: 10.1109/wmed.2011.5767285
{"title":"Welcome to the 2011 IEEE WMED","authors":"","doi":"10.1109/wmed.2011.5767285","DOIUrl":"https://doi.org/10.1109/wmed.2011.5767285","url":null,"abstract":"The previous eight WMED workshops have been very successful in attracting students, faculty and industry researchers from the Northwest region of the United States for a day of engaging invited talks, invited tutorials, technical presentations, poster sessions, and professional networking. I am happy to see a strong interest in our Workshop again this year. The WMED committee and I believe that the program that we have put together for today will be interesting and educational for all of you.","PeriodicalId":443024,"journal":{"name":"2011 IEEE Workshop on Microelectronics and Electron Devices","volume":"70 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124881735","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
IEEE WMED 2011 management committee IEEE WMED 2011管理委员会
2011 IEEE Workshop on Microelectronics and Electron Devices Pub Date : 1900-01-01 DOI: 10.1109/wmed.2011.5767286
Prashanth Raghu, J. Goswami, Huy Le, T. Hollis, David Wells, A. Limaye, Laurie Anderson, S. Surthi, Steve Groothuis, William Kueber, Haitao Liu, Hari Naidu, K. Shrotri, Jim Browning, Jacob Baker, Tony Liu, Gurtej Sandhu, Dan Lin, D. Montierth, Dong Pan, D. Dimitriu, E. Booth, Glen Hush, H. Kirsch, J. Sigman, J. Binfet, Jian Li, Jim Hofmann, Mark E Fischer, M. Helm, P. Sharma, Randy Koval, S. Zhao, Seong-Hoon Lee, Shi Mei, Suraj Mathew, S. Ramakrishnan, T. Owens, T. Gomm, V. Saxena, V. Mikhalev, Wayne Huang, Yantao Ma
{"title":"IEEE WMED 2011 management committee","authors":"Prashanth Raghu, J. Goswami, Huy Le, T. Hollis, David Wells, A. Limaye, Laurie Anderson, S. Surthi, Steve Groothuis, William Kueber, Haitao Liu, Hari Naidu, K. Shrotri, Jim Browning, Jacob Baker, Tony Liu, Gurtej Sandhu, Dan Lin, D. Montierth, Dong Pan, D. Dimitriu, E. Booth, Glen Hush, H. Kirsch, J. Sigman, J. Binfet, Jian Li, Jim Hofmann, Mark E Fischer, M. Helm, P. Sharma, Randy Koval, S. Zhao, Seong-Hoon Lee, Shi Mei, Suraj Mathew, S. Ramakrishnan, T. Owens, T. Gomm, V. Saxena, V. Mikhalev, Wayne Huang, Yantao Ma","doi":"10.1109/wmed.2011.5767286","DOIUrl":"https://doi.org/10.1109/wmed.2011.5767286","url":null,"abstract":"Dan Lin, David Wells, Dennis Montierth, Dong Pan, Dragos Dimitriu, Eric Booth, Glen Hush, Howard Kirsch, Jacob Baker, Jaydeb Goswami, Jen Sigman, Jeremy Binfet, Jian Li, Jim Hofmann, Mark Fischer, Mark Helm, Puneet Sharma, Randy Koval, Sandy Zhao, Seong-Hoon Lee, Shizhong Mei, Suraj Mathew, Suresh Ramakrishnan, Tim Hollis, Tim Owens, Tyler Gomm, Vishal Saxena, Vladimir Mikhalev, Wayne Huang, Yantao Ma","PeriodicalId":443024,"journal":{"name":"2011 IEEE Workshop on Microelectronics and Electron Devices","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123075484","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
IEEE WMED 2011 technical program IEEE WMED 2011技术方案
2011 IEEE Workshop on Microelectronics and Electron Devices Pub Date : 1900-01-01 DOI: 10.1109/wmed.2011.5767287
M. Kozicki
{"title":"IEEE WMED 2011 technical program","authors":"M. Kozicki","doi":"10.1109/wmed.2011.5767287","DOIUrl":"https://doi.org/10.1109/wmed.2011.5767287","url":null,"abstract":"","PeriodicalId":443024,"journal":{"name":"2011 IEEE Workshop on Microelectronics and Electron Devices","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134194722","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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