Advances in Patterning Materials and Processes XXXVI最新文献

{"title":"Nanoscale polymer property measurement using single-molecule fluorescence (Conference Presentation)","authors":"J. Liddle, Muzhou Wang, S. Stranick, Abhishek Kumar, J. Gilman","doi":"10.1117/12.2515658","DOIUrl":"https://doi.org/10.1117/12.2515658","url":null,"abstract":"Polymeric resist materials are a critical part of the lithographic patterning process. Understanding their behavior, particularly at extreme dimensions becomes challenging: the presence of a rigid substrate or free surface, chemical interactions, and stochastic fluctuations can all play a role. Continuum models for polymer material behavior at small length scales not only become inaccurate, but also fail to capture the statistical variations that must be understood in order to determine what are the ultimate limits to producing defect-free structures. Experimental measurement of nanoscale heterogeneities in polymer properties is difficult. Many of the techniques that possess the required spatial resolution use energetic beams of electrons that rapidly damage soft materials, while x-ray or neutron scattering methods provide only ensemble average measurements. Individual fluorescent molecules, however, can yield a significant amount of information about their local environment. Measurements of the fluorescence lifetimes of suitably engineered fluorophores have long been used in the life sciences to probe local pH, and oxygen, or Ca2+ concentration. Lifetimes may also be sensitive to viscosity, giving information about local molecular configurations at nanosecond timescales. Measurements of fluorophore orientation, and rotational mobility, can indicate local molecular ordering and mobility, respectively.\u0000While the use of single-molecule fluorescence imaging methods in the life sciences has progressed rapidly, its use in materials science has been slower to develop, with only a handful of studies related to lithographic materials. One principal reason for this is that, in materials, fluorophore orientation is often fixed. Single-molecule images therefore have a complex, orientation-dependent structure, that, if not correctly accounted for, can lead to large errors in determining their position and orientation. Reducing the positional inaccuracies to the few-nanometer or better level, requires more sophisticated approaches to fitting single-molecule images and novel imaging hardware. With these approaches, both the location and orientation of individual fluorophores can be determined accurately. This information, when combined with single molecule lifetime measurements can, in principle, provide nanometer scale on the structure and dynamics of polymeric materials. I will discuss our progress in making accurate and precise measurements of fluorophore position and orientation in materials to enable high-resolution imaging, our development of a straightforward approach to determine how localization uncertainty and fluorophore labeling density together limit our ability to resolve nanoscale structures, how lithographic patterning enables us to partially overcome that limit, and how single-molecule orientation measurements can provide information on deformation in polymers at the 10 nm length scale. Finally, I will speculate on how measurement of single-mo","PeriodicalId":437977,"journal":{"name":"Advances in Patterning Materials and Processes XXXVI","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-03-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124289450","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Then a miracle occurs: A description of the issues of EUV radiolysis process and the relationship to stochastic print failures (Conference Presentation)","authors":"J. Petersen","doi":"10.1117/12.2515263","DOIUrl":"https://doi.org/10.1117/12.2515263","url":null,"abstract":"The design of viable imageable photoresist materials for Extreme Ultra-Violet, EUV (13.5 nm), radiation requires the understanding of the energy conduits that form to deliver chemically relevant resonant energies within a material, Starting with absorption of a 92 eV ionizing radiation that, upon absorption, initiates a spawning of photoelectrons and secondary electrons that distribute energy across the population of generated secondary electrons with each subsequent generation’s electrons increasing in number and lower in average energy until they attain 0 eV. The loss of energy is the result of both elastic and inelastic scattering. At energies above 30 eV absorption is localized to atoms on the molecules in the resist matrix and the electrons that are spawned continue to react locally until then around 30-20 eV, the deep-valence region, they begin to delocalize and with continued ionization until 10 eV, that below this interacting through the molecular orbitals, the secondary electrons begin to react as virtual photons until below 3 eV where they attain energies that resonate with vibrational energies to form stable free radicals and ions that if not trapped by a molecule with a resonant low lying unoccupied molecular orbital (LUMO) may be captured by a hole in the material or substrate or they may get trapped in the material system as they are, without reacting.\u0000The resist designer applies knowledge concerning the interaction of high energy particles and photons with gases and biological systems to the lower energies used for lithography truncating at below 3 eV in the condensed matter of the polymeric resist matrix. This truncation occurs because the role of (quantum) resonance of a molecular bond with a “virtual photon” is typically between 3 and 5 eV. However, because of the presence of excess electron, stable anions, and radicals (as) reactants this truncation is erroneous; and chemistries may occur at energies approaching 0 eV. These chemistries result from vibrational resonances of the transient electron with a low energy unoccupied molecular orbitals (LUMO) of the matrix molecules. This behavior is quantum in nature and is not classical.\u0000This paper discusses the radiolysis processes as follows: \u00001. the local nonmolecular processes from 92 eV photon absorption to 30 eV, \u00002. then the ionization in the deep valence below 30 eV to 10 eV, \u00003. followed by the region of virtual photons from10 eV to 3 eV, \u00004. and then examine below 3 eV to 0 eV to finish. \u0000Describing the processes in the higher energy regions is difficult due to the short attosecond to femtosecond reaction time-resolution to monitor them but the paper proposes methods to accomplish. Below 30 eV the plasmonic charging work function pose problems for some methods like Total Electron Yield measurements of low energy electrons but time resolved and various analytical methods using EUV exposure will prove useful. \u0000The paper concludes by looking at the relationship to line-edge-rou","PeriodicalId":437977,"journal":{"name":"Advances in Patterning Materials and Processes XXXVI","volume":"122 25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-03-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129489236","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Increased regulatory scrutiny of photolithography chemistries: the need for science and innovation (Conference Presentation)","authors":"Brooke E. Tvermoes, D. Speed","doi":"10.1117/12.2516159","DOIUrl":"https://doi.org/10.1117/12.2516159","url":null,"abstract":"Semiconductor fabrication processes have evolved enormously with time, largely driven by the demand for advanced device architectures and increased performance. To continue to drive innovation and to achieve the desired electrical functionality required by today’s market, the industry relies on a number of highly sophisticated chemicals and materials. The semiconductor industry has traditionally adopted risk-based programs to reduce exposure potentials and environmental emissions or found safer alternatives when possible. For example, the industry was successfully able to phase out the use of perfluorooctanyl sulfonates (PFOS) and was able to surpass its 10-year goal in reducing the emissions of perfluorocompound (PFC) gases from semiconductor fabs. These two examples highlight recent voluntary initiatives undertaken by the industry to ensure the continued safe and responsible use of chemicals in semiconductor manufacturing processes.\u0000\u0000In June 2016, the Frank R. Lautenberg Chemical Safety for the 21st Century Act was signed into law significantly amending the Toxic Substances Control Act (TSCA) which is the main chemical safety law in the United States. TSCA has a broad scope and applies to the full life cycle of a chemical substance (i.e., manufacturing, processing, use, and disposal). Since TSCA reform the process as well as the data required to bring new chemicals to the market has changed dramatically. Therefore, chemical issues which have historically been managed singularly between the EPA and a specific company may be more effectively dealt with through industry-wide consortiums, including both chemical manufacturers and users. Consortiums of this nature are likely better positioned to generate data and information relevant to the entire life cycle of a chemical.\u0000\u0000For example, EPA recently denied low volume exemption requests (LVEs) for photoacid generators (PAGs) due to increased concerns regarding the environmental, health, and safety aspects of onium–based compounds. To address EPA’s concerns, a \"PAG onium\" consortium was formed to fill critical data gaps throughout the life cycle of these chemicals that will allow for a more accurate assessment of the potential risks associated with the use of these chemistries. Other photolithography chemistries that are under an increased level of scrutiny include short chain perfluorinated compounds (e.g., perfluorobutanesulfonic acid derivatives) and N-Methyl-2-pyrrolidone (NMP). \u0000\u0000This talk will discuss how recent changes to the regulatory landscape have changed EPA’s chemical reviews and the resulting implications on the information/ data required to evaluate a chemical before bringing it to market.","PeriodicalId":437977,"journal":{"name":"Advances in Patterning Materials and Processes XXXVI","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-03-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127018487","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Advances in metal oxide resist performance and production (Conference Presentation)","authors":"J. Stowers","doi":"10.1117/12.2502958","DOIUrl":"https://doi.org/10.1117/12.2502958","url":null,"abstract":"Inpria is a leader in the development of high-performance photoresist materials for EUV lithography. By design, these photoresists enable patterning at extremely small pitches, exhibit high EUV absorption to reduce the photon shot noise otherwise amplified in conventional resists, and provide high etch selectivity to provide a large process window. Such characteristics derive from the metal oxide molecular cluster composition of the resists and the small, highly homogeneous building blocks this chemistry enables. \u0000\u0000We will present recent advances to Inpria photoresist platforms which have resulted in improved RLS performance, process stability, and photospeed tunability. We demonstrate the patterning capabilities for specific use cases in logic and memory applications, including the performance after etch. For patterning on an NXE:3300, the materials deliver large process windows both for line/space features at 26nm pitch needed for logic metal patterning and for the 43nm pitch hex pillar arrays required for DRAM applications.\u0000\u0000Pilot-scale batches of Inpria’s resists are routinely produced on our production line. We will review our manufacturing facility and the capabilities of our formulation process scaled to support the production requirements of leading device manufacturers.","PeriodicalId":437977,"journal":{"name":"Advances in Patterning Materials and Processes XXXVI","volume":"55 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126591269","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}