{"title":"Resistive Switching Characteristics of Resistive Random Access Memory Devices after Furnace Annealing Processes","authors":"Chi-Yan Chu, Kai-Chi Chuang, Huang-Chung Cheng","doi":"10.5281/ZENODO.1131702","DOIUrl":"https://doi.org/10.5281/ZENODO.1131702","url":null,"abstract":"In this study, the RRAM devices with the TiN/Ti/HfOx/TiN structure were fabricated, then the electrical characteristics of the devices without annealing and after 400 °C and 500 °C of the furnace annealing (FA) temperature processes were compared. The RRAM devices after the FA’s 400 °C showed the lower forming, set and reset voltages than the other devices without annealing. However, the RRAM devices after the FA’s 500 °C did not show any electrical characteristics because the TiN/Ti/HfOx/TiN device was oxidized, as shown in the XPS analysis. From these results, the RRAM devices after the FA’s 400 °C showed the best electrical characteristics.","PeriodicalId":434401,"journal":{"name":"World Academy of Science, Engineering and Technology, International Journal of Electronics and Communication Engineering","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128978442","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"A Portable Environmental Parameter Monitor Based on STM32","authors":"Liang Zhao, C. Zhong","doi":"10.46300/9106.2020.14.47","DOIUrl":"https://doi.org/10.46300/9106.2020.14.47","url":null,"abstract":"In this paper, a portable monitoring system with environmental parameters as breakthrough point is proposed, and focuses on the research and development of a portable instrument for monitoring the quality of indoor environmental parameters. This paper studies and designs a portable environment parameter detector based on STM32 development board, which collects monitoring data through external sensors. Write your own based on STM32 platform of data acquisition and processing procedures, the successful implementation of the, temperature, humidity, formaldehyde, CO, real-time monitoring of environmental parameters such as methane, and through the LCD screen display in real time. Testing environment parameter meter, real-time display of the corresponding data and collecting sample data processing analysis of a day, to achieve the desired goal.","PeriodicalId":434401,"journal":{"name":"World Academy of Science, Engineering and Technology, International Journal of Electronics and Communication Engineering","volume":"69 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-02-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127118222","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Handwriting Recognition of Gurmukhi Script: A Survey of Online and Offline Techniques","authors":"R. Kaur","doi":"10.14445/22312803/IJCTT-V49P106","DOIUrl":"https://doi.org/10.14445/22312803/IJCTT-V49P106","url":null,"abstract":"Character recognition is very interesting area of pattern recognition. From past few decades an intensive research on character recognition for Roman, Chinese, and Japanese and Indian scripts have been reported. In this paper, a review of Handwritten Character Recognition work on Indian Script Gurmukhi is being highlighted. Most of the published papers were summarized, various methodologies were analysed and their results are reported.","PeriodicalId":434401,"journal":{"name":"World Academy of Science, Engineering and Technology, International Journal of Electronics and Communication Engineering","volume":"154 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123645249","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Infinite Impulse Response Digital Filters Design","authors":"Phuoc Si Nguyen","doi":"10.18178/IJSPS.5.2.83-88","DOIUrl":"https://doi.org/10.18178/IJSPS.5.2.83-88","url":null,"abstract":"Infinite Impulse Response (IIR) filters can be designed from an analogue low pass prototype by using frequency transformation in the s-domain and bilinear ztransformation with pre-warping frequency; this method is known as frequency transformation from the s-domain to the z-domain. This paper will introduce a new method to transform an IIR digital filter to another type of IIR digital filter (low pass, high pass, band pass, band stop or narrow band) using a technique based on inverse bilinear ztransformation and inverse matrices. First, a matrix equation is derived from inverse bilinear z-transformation and Pascal’s triangle. This Low Pass Digital to Digital Filter Pascal Matrix Equation is used to transform a low pass digital filter to other digital filter types. From this equation and the inverse matrix, a Digital to Digital Filter Pascal Matrix Equation can be derived that is able to transform any IIR digital filter. This paper will also introduce some specific matrices to replace the inverse matrix, which is difficult to determine due to the larger size of the matrix in the current method. This will make computing and hand calculation easier when transforming from one IIR digital filter to another in the digital domain. ","PeriodicalId":434401,"journal":{"name":"World Academy of Science, Engineering and Technology, International Journal of Electronics and Communication Engineering","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-04-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125866876","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Charge-carrier-mobility-dependent-open-circuit-voltage-in-organic-and-hybrid-solar-cells","authors":"D. Ompong, Jai Singh","doi":"10.15761/FNN.1000108","DOIUrl":"https://doi.org/10.15761/FNN.1000108","url":null,"abstract":"A better understanding of the open-circuit voltage () related losses in organic solar cells (OSCs) is desirable in order to assess their photovoltaic performance. We have derived as a function of charge carrier mobilities (and) for organic and hybrid solar cells by optimizing the drift-diffusion current density. The thus obtained depends on the energy difference between the highest occupied molecular orbital (HOMO) level and the quasi-Fermi level of holes of the donor material and on the ratio of the electron () and hole () mobilities in the blend. It is found that the increases with the increase of the mobility ratio. The most loss in is contributed by the energetics of the donor and acceptor materials.","PeriodicalId":434401,"journal":{"name":"World Academy of Science, Engineering and Technology, International Journal of Electronics and Communication Engineering","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-03-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115593455","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Optimizing Power in Sequential Circuits by Reducing Leakage Current Using Enhanced Multi Threshold CMOS","authors":"P. Sreenivasulu, K. S. Rao, A. Babu","doi":"10.17485/IJST/2016/V9I36/102601","DOIUrl":"https://doi.org/10.17485/IJST/2016/V9I36/102601","url":null,"abstract":"Technical thirst of man is in exponential rise and posing critical challenges in using this technology. This is much evident in the design of VLSI circuits. Sequential circuit designing demands lesser energy consumption, smartness and increased functional density. In this domain, every development in the recent past has energy as the focal point. MTCMOS exactly serves the purpose of reduced power consumption in digital circuits. This technique provides lower leakage current and offers enhanced speed. It uses low threshold voltage devices for low leakage and high threshold voltage components as sleep transistors. These sleep transistors are good enough to isolate the logic modules from the supply, ground in order to reduce the leakage current. Care is ensured particularly in the mode transition and also the least possible time for turn ON state in a circuit, as these are the primary concerns for power consumption and thereby for the performance degradation of integrated circuits. In this paper, a successful attempt was made in enhancing the advantage of employing MTCMOS technique towards lesser power consumption in sequential circuit designing.","PeriodicalId":434401,"journal":{"name":"World Academy of Science, Engineering and Technology, International Journal of Electronics and Communication Engineering","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-09-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115419128","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Analysing Industry Clustering to Develop Competitive Advantage for Wualai Silver Handicraft","authors":"Khanita Tumphasuwan","doi":"10.1007/978-3-662-47200-2_21","DOIUrl":"https://doi.org/10.1007/978-3-662-47200-2_21","url":null,"abstract":"","PeriodicalId":434401,"journal":{"name":"World Academy of Science, Engineering and Technology, International Journal of Electronics and Communication Engineering","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-05-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116554906","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Design and Simulation of Coupled-Line Coupler with Different Values of Coupling Efficiency","authors":"S. Babani, J. S. Kazaure","doi":"10.18479/ijeedc/2015/v3i8/48347","DOIUrl":"https://doi.org/10.18479/ijeedc/2015/v3i8/48347","url":null,"abstract":"","PeriodicalId":434401,"journal":{"name":"World Academy of Science, Engineering and Technology, International Journal of Electronics and Communication Engineering","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125078087","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"An enhanced connectivity aware routing protocol for vehicular Ad hoc networks","authors":"Ahmadu Maidorawa, K. A. Bakar","doi":"10.19026/rjaset.7.624","DOIUrl":"https://doi.org/10.19026/rjaset.7.624","url":null,"abstract":"Vehicular Ad Hoc Network (VANET) is a self organized and self maintained communication network that is spontaneously and wirelessly formed by moving vehicles to provide safety, entertainment and information to its users. To tap these benefits, efficient and reliable routing protocols are needed. Designing routing protocol in VANET is challenging as the result of high vehicles’ mobility that result in frequent network disconnections. This is why existing routing protocols include route error handling to cater for the disconnection problem. Most of these solutions are variations of keep and carry strategy with or without a feedback mechanism to the source node. These strategies are sometime unnecessarily prolong the packet delivery and worst even if they failed, a new path discovery process is re-launched and that create more control overhead that waste the useful bandwidth. Even with Preferred Group Broadcast re-initiating route request creates additional control overhead. In this research, an Enhanced Connectivity aware routing (ECAR) protocol is proposed. The protocol utilizes an alternative backup route anytime the primary route to destination fails. It also uses control broadcast to further reduce the number of broadcasts needed to find routes to destination by allowing only the furthest node that receives a route request packet to rebroadcast it further in the network. NS2 simulation experimental results show that the performance of ECAR protocol outperformed the original connectivity aware routing (CAR) protocol by reducing the average packet delay by 28%, control overheads by 27% and increased the packet delivery ratio by 22%.","PeriodicalId":434401,"journal":{"name":"World Academy of Science, Engineering and Technology, International Journal of Electronics and Communication Engineering","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126374408","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Y. Kobori, Shunsuke Tanaka, Tatsunori Nagashima, T. Sakai, Kotaro Kaneya, Shunichiro Todoroki, Z. Nosker, N. Takai, Haruo Kobayashi, T. Odaguchi, Isao Nakanishi, Kimio Ueda, Jun-Ichi Matsuda
{"title":"High Speed Response Single-Inductor Dual-Output DC-DC Converter with Hysteretic Control","authors":"Y. Kobori, Shunsuke Tanaka, Tatsunori Nagashima, T. Sakai, Kotaro Kaneya, Shunichiro Todoroki, Z. Nosker, N. Takai, Haruo Kobayashi, T. Odaguchi, Isao Nakanishi, Kimio Ueda, Jun-Ichi Matsuda","doi":"10.5176/978-981-07-7531-5_PEEE.04","DOIUrl":"https://doi.org/10.5176/978-981-07-7531-5_PEEE.04","url":null,"abstract":" Abstract— This paper proposes two kinds of new single-inductor dual-output (SIDO) DC-DC switching converters with ripple-based hysteretic control. First SIDO converters of type 1 utilize the triangular signal generated by the CR-circuit connected across the inductor. This triangular signal is used for generating the PWM signal instead of the saw-tooth signal used in the conventional converters. Second SIDO converters of type 2 utilize the triangular signal generated by the CR-circuit connected across the voltage error amplifier. This paper describes circuit topologies, operation principles, simulation results and experimental results of the proposed SIDO converters. In simulation results of both type of SIDO converters, static output voltage ripples are less than 5mVpp and over/under shoots of the dynamic load regulations for the output current step are less than +/10mV. In experimental results of single output converter of type 2, static output voltage ripples are about 20mVpp. Output ripples of SIDO type 1 converter are about 80mVpp.","PeriodicalId":434401,"journal":{"name":"World Academy of Science, Engineering and Technology, International Journal of Electronics and Communication Engineering","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-08-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126509210","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}