炉退火后电阻性随机存取存储器的电阻开关特性

World Academy of Science, Engineering and Technology, International Journal of Electronics and Communication Engineering Pub Date : 2017-06-01 DOI:10.5281/ZENODO.1131702

Chi-Yan Chu, Kai-Chi Chuang, Huang-Chung Cheng

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引用次数: 0

摘要

在本研究中，制备了具有TiN/Ti/HfOx/TiN结构的RRAM器件，然后比较了未退火和经过400°C和500°C炉退火(FA)温度工艺的器件的电学特性。经过400°C FA处理后的RRAM器件的成形、设定和复位电压均低于其他未退火器件。然而，在FA的500°C之后，RRAM器件没有显示任何电特性，因为TiN/Ti/HfOx/TiN器件被氧化，如XPS分析所示。从这些结果来看，经过400°C FA后的RRAM器件表现出最佳的电特性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Resistive Switching Characteristics of Resistive Random Access Memory Devices after Furnace Annealing Processes

In this study, the RRAM devices with the TiN/Ti/HfOx/TiN structure were fabricated, then the electrical characteristics of the devices without annealing and after 400 °C and 500 °C of the furnace annealing (FA) temperature processes were compared. The RRAM devices after the FA’s 400 °C showed the lower forming, set and reset voltages than the other devices without annealing. However, the RRAM devices after the FA’s 500 °C did not show any electrical characteristics because the TiN/Ti/HfOx/TiN device was oxidized, as shown in the XPS analysis. From these results, the RRAM devices after the FA’s 400 °C showed the best electrical characteristics.

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来源期刊

World Academy of Science, Engineering and Technology, International Journal of Electronics and Communication Engineering

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