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2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)最新文献

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Design of ZnO multilayers with different porosities for UV absorbing transparent glasses 紫外光吸收透明玻璃用不同孔隙率ZnO多层膜的设计
2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2016-07-11 DOI: 10.1109/NUSOD.2016.7547033
Y. Yoo, Y. Song
{"title":"Design of ZnO multilayers with different porosities for UV absorbing transparent glasses","authors":"Y. Yoo, Y. Song","doi":"10.1109/NUSOD.2016.7547033","DOIUrl":"https://doi.org/10.1109/NUSOD.2016.7547033","url":null,"abstract":"We present ZnO multilayers with different porosities on glass substrate for high efficient UV absorbing transparent glasses. Diffraction efficiencies of the proposed ZnO multilayers were calculated using a rigorous coupled wave analysis method. The results show the effect of design parameters such as effective index, porosity and thickness on the optical characteristics. The analysis based on volume averaging theory also supports the calculation results. Detailed design guidelines for optimum geometry are also discussed.","PeriodicalId":425705,"journal":{"name":"2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122346612","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Simulation of photon-photon resonance enhanced direct modulation bandwidth of DFB lasers 光子-光子共振增强DFB激光器直接调制带宽的模拟
2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2016-07-11 DOI: 10.1109/NUSOD.2016.7547075
M. Dumitrescu, T. Uusitalo, H. Virtanen, A. Laakso, P. Bardella, I. Montrosset
{"title":"Simulation of photon-photon resonance enhanced direct modulation bandwidth of DFB lasers","authors":"M. Dumitrescu, T. Uusitalo, H. Virtanen, A. Laakso, P. Bardella, I. Montrosset","doi":"10.1109/NUSOD.2016.7547075","DOIUrl":"https://doi.org/10.1109/NUSOD.2016.7547075","url":null,"abstract":"Simulations and experimental results of high-frequency photon-photon resonance are used to examine the possibilities to extend the direct modulation bandwidth in dual-mode distributed feedback lasers beyond the conventional limit set by the carrier-photon resonance.","PeriodicalId":425705,"journal":{"name":"2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122206169","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Origin and optimization of large dark current increase in InGaAs/InP APD InGaAs/InP APD中大暗电流增加的来源及优化
2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2016-07-11 DOI: 10.1109/NUSOD.2016.7547062
J. Wen, W. J. Wang, W. D. Hu, N. Li, Z. Li, W. Lu
{"title":"Origin and optimization of large dark current increase in InGaAs/InP APD","authors":"J. Wen, W. J. Wang, W. D. Hu, N. Li, Z. Li, W. Lu","doi":"10.1109/NUSOD.2016.7547062","DOIUrl":"https://doi.org/10.1109/NUSOD.2016.7547062","url":null,"abstract":"Dark current of our InGaAs/InP planar SAGCM APD is simulated. Activation energy Ea obtained from the I-V test under temperature range of 240K~300K is cooperated in the simulation. Two origins of the dark current increasi of over one order of magnitude from the punchthrouth voltage to the breakthrough voltage are analyzed. Our results provide two critical points to reduce the dark current of an InGaAs/InP APD operated under the linear operation mode.","PeriodicalId":425705,"journal":{"name":"2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115841097","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Analysis of electronic transport in a single-phonon resonance mid-IR quantum cascade laser 单声子共振中红外量子级联激光器中的电子输运分析
2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2016-07-11 DOI: 10.1109/NUSOD.2016.7547067
G. Hałdaś, A. Kolek, D. Pierścińska, P. Gutowski, K. Pierściński, P. Karbownik, M. Bugajski
{"title":"Analysis of electronic transport in a single-phonon resonance mid-IR quantum cascade laser","authors":"G. Hałdaś, A. Kolek, D. Pierścińska, P. Gutowski, K. Pierściński, P. Karbownik, M. Bugajski","doi":"10.1109/NUSOD.2016.7547067","DOIUrl":"https://doi.org/10.1109/NUSOD.2016.7547067","url":null,"abstract":"Non-equilibrium Green's function method is used to analyze electronic transport in a mid-infrared quantum cascade laser on microscopic level. Basing on the excellent agreement found between calculated and experimental data, the conclusions are derived that the carrier distribution in the lower laser subband is non-thermal, and the carriers are extracted from active region both in cold and hot state. An estimate 0.52 ps of upper lifetime was found which considerably differs from the value evaluated from the form factors.","PeriodicalId":425705,"journal":{"name":"2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116490507","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Characterization of GaN-based quantum dots within vertical-cavity surface-emitting lasers for realizing green lasers by simulations 垂直腔面发射激光器中氮化镓基量子点的仿真表征
2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2016-07-11 DOI: 10.1109/NUSOD.2016.7547083
M. Nadir
{"title":"Characterization of GaN-based quantum dots within vertical-cavity surface-emitting lasers for realizing green lasers by simulations","authors":"M. Nadir","doi":"10.1109/NUSOD.2016.7547083","DOIUrl":"https://doi.org/10.1109/NUSOD.2016.7547083","url":null,"abstract":"The GaN-based green lasers play an important role in optoelectronic innovation. Multi quantum wells and quantum dots within a quantum well have been characterized. The polarization, effective mass, subbands and optical gain have been taken into account. The rigorous k·p-method with Hamiltonian (8 by 8) is applied. The electrical and optical effect have also been compared in order to reach optimal design for green or yellow-green lasers. The piezoelectric effect is also included in simulation. Thus, it is a step ahead in optimizing such complex laser structures.","PeriodicalId":425705,"journal":{"name":"2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"183-185 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125158704","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Optical modelling of semi-transparent OPV devices 半透明OPV器件的光学建模
2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2016-07-11 DOI: 10.1109/NUSOD.2016.7547019
M. B. Upama, M. Wright, N. Elumalai, Md Arafat Mahmud, Dian Wang, K. Chan, Cheng Xu, F. Haque, A. Uddin
{"title":"Optical modelling of semi-transparent OPV devices","authors":"M. B. Upama, M. Wright, N. Elumalai, Md Arafat Mahmud, Dian Wang, K. Chan, Cheng Xu, F. Haque, A. Uddin","doi":"10.1109/NUSOD.2016.7547019","DOIUrl":"https://doi.org/10.1109/NUSOD.2016.7547019","url":null,"abstract":"The optical properties of a novel semi-transparent organic solar cell were investigated to maximize photocurrent generation. The effect of multilayer anode thickness and illumination direction was studied. Optimized device can provide ~2.5 fold enhancement in photocurrent.","PeriodicalId":425705,"journal":{"name":"2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128468664","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Self consistent carrier transport in band engineered HgCdTe nBn detector 带工程HgCdTe nBn探测器中的自一致载流子输运
2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2016-07-11 DOI: 10.1109/NUSOD.2016.7547060
N. Akhavan, G. Umana-Membreno, J. Antoszweski, L. Faraone
{"title":"Self consistent carrier transport in band engineered HgCdTe nBn detector","authors":"N. Akhavan, G. Umana-Membreno, J. Antoszweski, L. Faraone","doi":"10.1109/NUSOD.2016.7547060","DOIUrl":"https://doi.org/10.1109/NUSOD.2016.7547060","url":null,"abstract":"In this paper we study the influence of carrier transport under non-equilibrium condition in HgCdTe superlattice barrier detector employing self-consistent NEGF-Poisson solver. We use single-band effective mass approximation extracted from k.p envelope function to calculate dark current in the presence of applied bias. We expect the properties of superlattice barrier (doping, layer width, etc.) modify the band alignment between barrier layer and absorber layer, and consequently the dark current of band engineered HgCdTe detector will vary.","PeriodicalId":425705,"journal":{"name":"2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126921355","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
InGaN/GaN nanowire LEDs and lasers InGaN/GaN纳米线led和激光器
2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2016-07-11 DOI: 10.1109/NUSOD.2016.7547051
Chao Zhao, T. Ng, S. Jahangir, T. Frost, P. Bhattacharya, B. Ooi
{"title":"InGaN/GaN nanowire LEDs and lasers","authors":"Chao Zhao, T. Ng, S. Jahangir, T. Frost, P. Bhattacharya, B. Ooi","doi":"10.1109/NUSOD.2016.7547051","DOIUrl":"https://doi.org/10.1109/NUSOD.2016.7547051","url":null,"abstract":"The large specific surface, and the associated high density of surface states was found to limit the light output power and quantum efficiency of nanowire-array devices, despite their potential for addressing the “green-gap” and efficiency-droop issues. The phonon and carrier confinement in nanowires also led to junction heating, and reduced heat dissipation. In this paper, we will present our studies on effective surface states passivation in InGaN/GaN quantum-disks (Qdisks)-in-nanowire light-emitting diodes (LEDs) and lasers grown on silicon (Si), as well as our recent work on nanowires LEDs grown on bulk-metal, a non-conventional substrate.","PeriodicalId":425705,"journal":{"name":"2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126945538","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Analysis of temperature distribution characteristics from an improved IGBT power cycling test 改进IGBT功率循环试验的温度分布特性分析
2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2016-07-11 DOI: 10.1109/NUSOD.2016.7547079
H. Cui, Kaiyun Pi
{"title":"Analysis of temperature distribution characteristics from an improved IGBT power cycling test","authors":"H. Cui, Kaiyun Pi","doi":"10.1109/NUSOD.2016.7547079","DOIUrl":"https://doi.org/10.1109/NUSOD.2016.7547079","url":null,"abstract":"The power cycling test is an important method to study the reliability of IGBT module. In order to solve the problem that traditional power cycling test simulation load is too idealistically, we proposed an improved power cycling test simulation based on the traditional power cycling test simulation considering the anode spike voltage during turn off process and the voltage drop of MOSFET and PNP transistors device in the process of conducting. In addition, using ANSYS simulation software for simulate the both power cycling test, we get the temperature field distribution of the IGBT module by the two power cycling simulation. Considering the transient characteristics during the IGBT turn-off process, so that the loads in improved power cycling test simulation more realistic, therefore a more accurate simulation result than traditional test. Nearly 10% lower than the highest temperature of the temperature field of conventional power cycling test. This simulation provides a more accurate theory for the power cycling test in the IGBT applications.","PeriodicalId":425705,"journal":{"name":"2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129430502","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Numerical simulation of near-field focusing phenomena depending on the radius of curvature and the refractive index of microlens 随微透镜曲率半径和折射率变化的近场聚焦现象数值模拟
2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2016-07-11 DOI: 10.1109/NUSOD.2016.7547032
H. G. Park, G. J. Lee, Y. M. Song
{"title":"Numerical simulation of near-field focusing phenomena depending on the radius of curvature and the refractive index of microlens","authors":"H. G. Park, G. J. Lee, Y. M. Song","doi":"10.1109/NUSOD.2016.7547032","DOIUrl":"https://doi.org/10.1109/NUSOD.2016.7547032","url":null,"abstract":"We report near-field focusing phenomena depending on the radius of curvature (ROC) and the refractive index of a microscale solid immersion lens (m-SIL) by finite-difference time-domain (FDTD) calculation. We show the clear effect of the ROC and the refractive index on the focal length and the focal-spot size, indicating the estimated resolution of the combined optical system.","PeriodicalId":425705,"journal":{"name":"2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134412599","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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