Origin and optimization of large dark current increase in InGaAs/InP APD

Abstract

Dark current of our InGaAs/InP planar SAGCM APD is simulated. Activation energy Ea obtained from the I-V test under temperature range of 240K~300K is cooperated in the simulation. Two origins of the dark current increasi of over one order of magnitude from the punchthrouth voltage to the breakthrough voltage are analyzed. Our results provide two critical points to reduce the dark current of an InGaAs/InP APD operated under the linear operation mode.