IEEE/LEOS 1995 Digest of the LEOS Summer Topical Meetings. Flat Panel Display Technology最新文献

{"title":"Analog Optoelectronic Module Development TRIP","authors":"H. Yen","doi":"10.1109/LEOSST.1995.764186","DOIUrl":"https://doi.org/10.1109/LEOSST.1995.764186","url":null,"abstract":"","PeriodicalId":425083,"journal":{"name":"IEEE/LEOS 1995 Digest of the LEOS Summer Topical Meetings. Flat Panel Display Technology","volume":"56 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123267114","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Microwave frequency synthesis using injection locked laser comb line selection","authors":"B. Cai, D. Wake, A. Seeds","doi":"10.1109/LEOSST.1995.764171","DOIUrl":"https://doi.org/10.1109/LEOSST.1995.764171","url":null,"abstract":"Microwave frequency synthesis can be realised by mixing the output of two or more DFB lasers injection locked to the same optical comb. The noise and stability problems of this approach are studied.","PeriodicalId":425083,"journal":{"name":"IEEE/LEOS 1995 Digest of the LEOS Summer Topical Meetings. Flat Panel Display Technology","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116840203","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Burst Mode Bipolar Laser Driver for a Multipoint to Point Passive Optical Network at 155.52 Mbit/s","authors":"R. Coppoolse, H. Van Parys, J. Codenie, J. Vandewege","doi":"10.1109/LEOSST.1995.764141","DOIUrl":"https://doi.org/10.1109/LEOSST.1995.764141","url":null,"abstract":"A burst mode bipolar laser driver for a multipoint to point passive optical network at 155.52 Mbit/s has been developed. This integrated circuit is specially designed for commercially available packaged lasers, and is optimised for low power dissipation and cost. Measurements show a rise and fall-time of 1.2 ns.","PeriodicalId":425083,"journal":{"name":"IEEE/LEOS 1995 Digest of the LEOS Summer Topical Meetings. Flat Panel Display Technology","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128511235","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"High-Reliability Self-Aligned InGaP/GaAs HBTs for Lightwave Communications","authors":"T. Fujii, T. Takahashi, S. Sasa, A. Kawano, T. lwai","doi":"10.1109/LEOSST.1995.764152","DOIUrl":"https://doi.org/10.1109/LEOSST.1995.764152","url":null,"abstract":"The development of advanced IC technologies is a key factor in high-speed lightwave communication systems, operating at over lO-Gb/s. 111-V based heterojunction bipolar transistor (HBT) ICs are very promising candidates because of their excellent high-speed characteristics. l) However, when applying HBTs to lightwave communications which require long-term reliability, a reduction in the current gain, p, during operation2) becomes a serious problem. In this paper, we show that the increase in the recombination current in the emitter space charge region govems the p degradation processes during operation in conventional AlGaAs/GaAs HBTs. We also demonstrate our high-reliability HBTs with a time to failure of lo6 hours at a junction temperature of 200°C by using an InGaP emitter. This is the best value in reported HBTs.3) T-shaped self-aligned HBTs with an InGaP emitter and an AlGaAs emitter were fabricated to examine the degradation mechanism. The HBT has a 70-nmthick carbon doped GaAs base (4 x loi9 ~ m ~ ) and an InGaAs cap layer for nonalloyed metallization. The emitter area is 2 x 10 pm2. Figure 1 shows a schematic diagram of an HBT. The base electrode was formed through the emitter layer (InGaP or AlGaAs) using Pd/Zn/Pt/Au. We performed a long-term reliability test at an ambient temperature of between 150°C and 260°C with a constant emitter current density of 6 x lo4 A/cm2. For AlGaAs HBTs, p showed a rapid degradation after applying a current stress of 200 hours at 150°C (Fig. 2). These HBTs also showed an increase in the base curtent, Ib, which has an ideality factor, n, nearly equal to 2 in the Gummel plot (Fig.3 (a)). Cross-sectional transmission electron microscopy (TEM) observations revealed carbon precipitation in the base layer close to the E-B junction. This suggests that the degradation occurred in the intrinsic layer. Recombination enhanced impurity diffusion (REID) is the possible mechanism for the carbon precipitation which, we believe, is triggered by the increase of recombination centers in the space charge region during operation. Contrary to AlGaAs HBTs, InGaP HBTs showed no significant reduction in p under a current stress of over 1000 hours. The Gummel plot (Fig. 3(b)) also shows little change in both Ib and IC. These results indicate that the use of the InGaP emitter is essential for the elimination of recombination current4) and the achievement of highreliability HBTs. Figure 4 shows the dependence of the time to failure (lifetime) on the junction temperature, Tj. We defined the failure as a 10% gain reduction after the initial change (20 to 30 hours). Typical AlGaAs HBTs with an activation energy, Ea, of 0.6 eV appeared to be consistent with the degradation mechanism described","PeriodicalId":425083,"journal":{"name":"IEEE/LEOS 1995 Digest of the LEOS Summer Topical Meetings. Flat Panel Display Technology","volume":"106 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128070363","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Characterization and Optimization of High Brightness Organic Light Emitting Diodes (OLEDs)","authors":"D. Ammermann, A. Bohler, C. Rompf, W. Kowalsky","doi":"10.1109/LEOSST.1995.764062","DOIUrl":"https://doi.org/10.1109/LEOSST.1995.764062","url":null,"abstract":"Introduction Light emitting diodes based on organic thin films (OLEDs) are of great interest because of their future application in active large-area flat color displays [1,2]. A multilayer structure consisting of hole transport layer, emission layer, and electron transport layer allows to achieve bright electroluminescent emission in the visible spectral region at low driving voltages [3,4]. We report on growth, characterization, and optimization of high brightness OLEDs for the green spectral region. Organic Materials and Device Preparation The molecular structures of the organic semiconductor materials used for the electroluminescent devices described here are shown in Fig 1. The metal-organic complex CuPc (copper phthalocyanine) exhibits preferentially hole-transporting properties and the 1,3,4-oxadiazole-derivative PBD (2-(4-biphenylyl)-5-(4tert-butylphenyl)-l,3,4-oxadiazole) serves as electron transport layer. The metal chelate complex Alq (tris(8-hydroxychinoline) aluminum) is known for its high fluorescence yield in the green spectral region.","PeriodicalId":425083,"journal":{"name":"IEEE/LEOS 1995 Digest of the LEOS Summer Topical Meetings. Flat Panel Display Technology","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127910835","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Recent developments in digital baseband fiber in the loop systems","authors":"J. Jones","doi":"10.1109/LEOSST.1995.763999","DOIUrl":"https://doi.org/10.1109/LEOSST.1995.763999","url":null,"abstract":"3aseband fiber in the loop (FITL) systems have been enjoying a resurgence in interest since the beginning of 1995. Originally, such systems were thought to be the best for deployment in local access applications by telephone companies. In particular, narrowband FITL systems were under intense development in the early 1990s. Bellcore's TR 909 standard, adopted in that time frame, reflects the interest and activity level of that time. With the announcement of the FCC's Video Dialtone ruling in 1992, attention focused on broadband access systems. At the time, broadband FITL systems were thought to he too expensive. As a result, development began on approaches based on cable television technology culminating in the proposal of \"hybrid fiber coax\" (HFC) systems. However, as a result of advancements in the baseband FITL approach, specifically reductions in the cost to deploy, renewed attention is now being p,aid to such systems and many network operators have selected that approach as their preferred local access architecture. This paper discusses the advancements that drove the improvements in baseband FITL systems I","PeriodicalId":425083,"journal":{"name":"IEEE/LEOS 1995 Digest of the LEOS Summer Topical Meetings. Flat Panel Display Technology","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134329306","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Efficiency Limits for Emissive Polymer LEDs","authors":"L. Rothberg, M. Yan","doi":"10.1109/LEOSST.1995.763979","DOIUrl":"https://doi.org/10.1109/LEOSST.1995.763979","url":null,"abstract":"Measurements of conjugated polymer photoluminescence yield are often motivated by their implications for the emissive efficiency of electroluminescent devices based upon the same material. We report studies of phenylenevinylene polymers that enable us to identify two important mechanisms, one intrinsic and one extrinsic, which reduce the luminescence efficiency. We also show that one of the premises underlying the presumed correlation between electroluminescence and photoluminescence quantum yields is incorrect.","PeriodicalId":425083,"journal":{"name":"IEEE/LEOS 1995 Digest of the LEOS Summer Topical Meetings. Flat Panel Display Technology","volume":"157 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133171459","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"<10Hz linewidth optical millimetre-wave source for fibre-radio systems using a dual mode dfb semiconductor laser","authors":"C. R. Lima, P. A. Davies, D. Wake","doi":"10.1109/LEOSST.1995.764190","DOIUrl":"https://doi.org/10.1109/LEOSST.1995.764190","url":null,"abstract":"We demonstrate the generation of millimetre-wave signals with <10Hz linewidth and with 500MHz locking range using a dual mode semiconductor laser. A subharmonic drive signal phase locks the beat signal produced by heterodyning the two modes. Recently frequencies in the millimetre-wave band have been proposed to meet the future demand for broadband wireless access networks. Frequencies at 62-63GHz and 65-66GHz have been allocated in Europe for the Mobile Broadband System (MBS) and the 40GHz region has been identified for longer range (up to 1km) applications such as video distribution. To enable this technology with low cost, fibre distribution of radio signals at 40GHz and 60-70GHz will be required. Very few optical sources cap of modulation at these frequencies have been demonstrated [1,2].","PeriodicalId":425083,"journal":{"name":"IEEE/LEOS 1995 Digest of the LEOS Summer Topical Meetings. Flat Panel Display Technology","volume":"62 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116953253","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"The Luminescent Process in Organic Light Emitting Devices","authors":"M. Thompson, D. McCarty, L. Sapochak, P. Burrows, S. Forrest","doi":"10.1109/LEOSST.1995.764043","DOIUrl":"https://doi.org/10.1109/LEOSST.1995.764043","url":null,"abstract":"Understanding the electroluminescent (EL) process in organic light emitting devices is very important for the rational design of optimized chromophores for use in organic LEDs. By comparing solution and solid state fluorescence spectra, it has been shown that molecularly localized or Frenkel excitons are responsible for the EL output. This makes theoretical modeling of the emission process fairly straightforward, since isolated molecules can be used in the theoretical calculations. We have carried out an extensive molecular orbital study of several different molecules used in vacuum deposited LEDs. The calculations were carried out using a semiempirical molecular orbital program (ZINDO) which is designed to give allowed transition energies and orbital compositions for metal complexes. In these calculations the ground state structures are taken from crystallographic data.","PeriodicalId":425083,"journal":{"name":"IEEE/LEOS 1995 Digest of the LEOS Summer Topical Meetings. Flat Panel Display Technology","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123540092","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"The design of laser diodes with low distortion for application in large bandwidth catv-systems","authors":"G. Morthier","doi":"10.1109/LEOSST.1995.764179","DOIUrl":"https://doi.org/10.1109/LEOSST.1995.764179","url":null,"abstract":"The design of DFB laser diodes with low distortion is of crucial importance for optical CATV transmission systems. As the number of requested channels still increases, a low distortion over an increasing bandwidth is needed. It is at present well understood how lasers with a low distortion at low modulation frequencies must be designed. Strained layer quantum well material must be used to suppress the effect of the carrier density dependence of the absorption [l] and a rather small kL-value is needed to suppress the spatial hole burning contribution [2, 31. However, due to the relaxation oscillations the distortion still increases rapidly with modulation frequency if this frequency rises above a few hundred MHz. As the bandwidth of near-future systems will be as high as SOOMHzlGHz, a strong reduction of the distortion caused by the relaxation oscillations would be highly appreciated. To reduce the distortion in this modulation frequency range, one can make very good use of the non-linear gain-carrier density relation which exists in quantum well material. It has been shown before [4,5] that the contribution from the relaxation oscillations to the","PeriodicalId":425083,"journal":{"name":"IEEE/LEOS 1995 Digest of the LEOS Summer Topical Meetings. Flat Panel Display Technology","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129064942","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}