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2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)最新文献

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Investigation of HBT layout impact on fT doubler performance for 90nm SiGe HBTs HBT布局对90nm SiGe HBT增倍器性能影响的研究
2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) Pub Date : 2014-12-11 DOI: 10.1109/BCTM.2014.6981274
V. Jain, B. J. Gross, J. Pekarik, J. Adkisson, R. Camillo-Castillo, Qizhi Z. Liu, P. Gray, A. Vallett, A. DiVergilio, B. Zetterlund, D. Harame
{"title":"Investigation of HBT layout impact on fT doubler performance for 90nm SiGe HBTs","authors":"V. Jain, B. J. Gross, J. Pekarik, J. Adkisson, R. Camillo-Castillo, Qizhi Z. Liu, P. Gray, A. Vallett, A. DiVergilio, B. Zetterlund, D. Harame","doi":"10.1109/BCTM.2014.6981274","DOIUrl":"https://doi.org/10.1109/BCTM.2014.6981274","url":null,"abstract":"Peak fT of 660 GHz is reported for HBT fT doubler designs in IBM 90 nm SiGe BiCMOS technology 9HP. This high performance fT doubler utilizes a longer HBT for output stage compared to the input stage HBT (length ratio 2:1) resulting in improved transconductance and lower thermal resistance. The impact of HBT layout on the circuit performance and trade-off between thermal resistance and fT is also investigated. fT doubler circuit can be used as a single transistor in several circuit applications like A/D converters and broadband circuits where higher performance is desired.","PeriodicalId":423269,"journal":{"name":"2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133165102","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
A wide tuning triple-band frequency generator MMIC in 0.18μm SiGe BiCMOS technology 采用0.18μm SiGe BiCMOS技术的宽调谐三频带频率发生器MMIC
2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) Pub Date : 2014-12-11 DOI: 10.1109/BCTM.2014.6981314
Hechen Wang, Feng Zhao, F. Dai, G. Niu, B. Wilamowski, Jun Fu, Wei Zhou, Yudong Wang
{"title":"A wide tuning triple-band frequency generator MMIC in 0.18μm SiGe BiCMOS technology","authors":"Hechen Wang, Feng Zhao, F. Dai, G. Niu, B. Wilamowski, Jun Fu, Wei Zhou, Yudong Wang","doi":"10.1109/BCTM.2014.6981314","DOIUrl":"https://doi.org/10.1109/BCTM.2014.6981314","url":null,"abstract":"This paper presents a wide-tuning frequency generation scheme based on bottom-series coupled quadrature VCO (QVCO). The low band and middle band frequency signal is generated from the QVCO while the high band signal is obtained from a gilbert mixer. The tuning-range enhancement technique allows a three band frequency generation in the range from 2.4GHz to 8.4GHz without penalizing its phase noise. The VCO monolithic microwave integrated circuit (MMIC) is implemented in a 0.18 μm SiGe BiCMOS technology with 1.8 mm2 area. The measured frequency range is 15.4% for the three bands centered at 2.5GHz, 5GHz, and 7.5GHz. The measured phase noise are -124.4dBc/Hz, -119.1dBc/Hz and -108.8dBc/Hz at 1 MHz offset for the low, middle, high band signals, separately. The measurement results demonstrate that proposed frequency generation technique can achieve wide tuning range capability as well as the low phase noise with very compact circuit.","PeriodicalId":423269,"journal":{"name":"2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134210158","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
A 2×2, 316 GHz SiGe scalable transmitter array with novel phase locking method and on-die antennas 一种2×2, 316 GHz SiGe可扩展发射机阵列，具有新颖的锁相方法和片上天线
2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) Pub Date : 2014-12-11 DOI: 10.1109/BCTM.2014.6981285
S. Zeinolabedinzadeh, Aida L. Vera Lopez, N. Lourenco, A. Ulusoy, M. Kaynak, M. Kamarei, B. Tillack, J. Papapolymerou, J. Cressler
{"title":"A 2×2, 316 GHz SiGe scalable transmitter array with novel phase locking method and on-die antennas","authors":"S. Zeinolabedinzadeh, Aida L. Vera Lopez, N. Lourenco, A. Ulusoy, M. Kaynak, M. Kamarei, B. Tillack, J. Papapolymerou, J. Cressler","doi":"10.1109/BCTM.2014.6981285","DOIUrl":"https://doi.org/10.1109/BCTM.2014.6981285","url":null,"abstract":"We demonstrate a fully integrated 2×2 SiGe transmitter array at 316 GHz. A novel method is introduced to phase-lock the high frequency signal sources without any additional circuitry. This method suppresses the other possible oscillatory modes automatically. The power of the locked signal sources are combined in the air by the 2×2 on-chip antenna array which are fed with the locked sources. This array is scalable to larger sizes in the same layout style. This array transmitter utilizes Colpitts oscillators as high frequency signal sources; however, this method can be applied to any other oscillator architecture to perform the frequency and phase locking. The frequency of this transmitter follows the simple equations for a single Colpitts oscillator, thereby facilitating the design of the circuit.","PeriodicalId":423269,"journal":{"name":"2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132277521","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Microwave noise properties of heterojunction bipolar transistors 异质结双极晶体管的微波噪声特性
2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) Pub Date : 2014-12-11 DOI: 10.1109/BCTM.2014.6981277
J. Bardin, J. Li, A. H. Coskun, Metin Ayata, Zachariah Boynton
{"title":"Microwave noise properties of heterojunction bipolar transistors","authors":"J. Bardin, J. Li, A. H. Coskun, Metin Ayata, Zachariah Boynton","doi":"10.1109/BCTM.2014.6981277","DOIUrl":"https://doi.org/10.1109/BCTM.2014.6981277","url":null,"abstract":"The broadband noise performance of silicon germanium (SiGe) and compound semiconductor (CS) heterojunction bipolar transistors (HBTs) is presented. The key noise mechanisms in HBTs are summarized to provide a framework through which the noise limitations of the devices can be understood. Process related details and transport physics of each class of device are then compared and contrasted with a focus on details relevant to the broadband noise performance. Fundamental noise performance limitations are presented for exemplary InP/InGaAs/InP BiCMOS DHBTs and SiGe HBTs. The state-of-the-art for SiGe and CS HBTs operating in the 1-300 GHz frequency range is reviewed and interpreted in the context of fundamental performance limitations. Finally, the paper concludes with a discussion of how the performance of future HBT technology generations should improve.","PeriodicalId":423269,"journal":{"name":"2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121521441","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
A low-power and ultra-compact W-band transmitter front-end in 90 nm SiGe BiCMOS technology 采用90nm SiGe BiCMOS技术的低功耗超紧凑w波段发射器前端
2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) Pub Date : 2014-12-11 DOI: 10.1109/BCTM.2014.6981304
T. Chi, Jong Seok Park, R. Schmid, A. Ulusoy, J. Cressler, Hua Wang
{"title":"A low-power and ultra-compact W-band transmitter front-end in 90 nm SiGe BiCMOS technology","authors":"T. Chi, Jong Seok Park, R. Schmid, A. Ulusoy, J. Cressler, Hua Wang","doi":"10.1109/BCTM.2014.6981304","DOIUrl":"https://doi.org/10.1109/BCTM.2014.6981304","url":null,"abstract":"This paper presents a W-band direct-conversion transmitter front-end implemented in SiGe BiCMOS technology. The transmitter consists of an up-conversion mixer, a power amplifier (PA), and all the required on-chip passive matching networks. A differential cascode structure with capacitive neutralization is used in the PA design for improved gain and reverse isolation. W-band on-chip transformers are extensively utilized to realize low-loss and ultra-compact passive matching networks. This design strategy enables the whole transmitter core to fit within a 600 μm × 250 μm die area. The transmitter achieves +7.2 dBm peak output power and 18 dB conversion gain at 87 GHz, with 73.5 mW total power consumption. Modulation tests with QPSK and 16QAM signals (both at 50 MSym/s) were also performed. Average EVM values of 5.9% / 6.7% have been achieved at 7 dB output power back-off for QPSK/16QAM signals, respectively.","PeriodicalId":423269,"journal":{"name":"2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)","volume":"107 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125110927","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
A low phase noise signal generation system for Ka-Band P2P applications based on an injection-locked frequency tripler 基于注入锁频三倍器的ka波段P2P低相位噪声信号产生系统
2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) Pub Date : 2014-12-11 DOI: 10.1109/BCTM.2014.6981310
D. Cabrera, J. Bégueret, Y. Deval, O. Tesson, P. Gamand, O. Mazouffre, T. Taris
{"title":"A low phase noise signal generation system for Ka-Band P2P applications based on an injection-locked frequency tripler","authors":"D. Cabrera, J. Bégueret, Y. Deval, O. Tesson, P. Gamand, O. Mazouffre, T. Taris","doi":"10.1109/BCTM.2014.6981310","DOIUrl":"https://doi.org/10.1109/BCTM.2014.6981310","url":null,"abstract":"A signal generation system composed by a subharmonic VCO followed by an injection-locked frequency tripler (ILFT) is designed in a 0.25 μm BiCMOS SiGe:C technology. The ILFT implements a cascoded current-biased common emitter configuration that exploits the second harmonic of the VCO to enhance the efficiency in the generation of the injecting signal responsible for the ILFT locking. At 30.8GHz, the system achieves a phase noise of -112 dBc/Hz at 1 MHz offset. The total current consumption is 38 mA for a supply voltage of 2.5 V.","PeriodicalId":423269,"journal":{"name":"2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)","volume":"133 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123164617","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
A simple and accurate method for extracting the emitter and thermal resistance of BJTs and HBTs 一种简单、准确的提取bjt和HBTs发射极和热阻的方法
2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) Pub Date : 2014-12-11 DOI: 10.1109/BCTM.2014.6981308
A. Pawlak, S. Lehmann, M. Schroter
{"title":"A simple and accurate method for extracting the emitter and thermal resistance of BJTs and HBTs","authors":"A. Pawlak, S. Lehmann, M. Schroter","doi":"10.1109/BCTM.2014.6981308","DOIUrl":"https://doi.org/10.1109/BCTM.2014.6981308","url":null,"abstract":"A simple yet accurate extraction method for the emitter and thermal resistance of bipolar transistors is presented. Only DC measurements taken on a thermally controlled wafer prober are required. The knowledge of the collector resistance is preferable, but not mandatory. The method yields excellent results when applied to advanced HBT technologies.","PeriodicalId":423269,"journal":{"name":"2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)","volume":"62 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127738075","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
Ultra-low noise and low power 18.7 GHz radiometer LNAs in a 0.5 THz SiGe technology utilizing back-side etched inductors 超低噪声和低功耗18.7 GHz辐射计LNAs在0.5太赫兹SiGe技术，利用背面蚀刻电感
2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) Pub Date : 2014-12-11 DOI: 10.1109/BCTM.2014.6981312
C. Coen, R. Schmid, J. Cressler, M. Kaynak, B. Tillack
{"title":"Ultra-low noise and low power 18.7 GHz radiometer LNAs in a 0.5 THz SiGe technology utilizing back-side etched inductors","authors":"C. Coen, R. Schmid, J. Cressler, M. Kaynak, B. Tillack","doi":"10.1109/BCTM.2014.6981312","DOIUrl":"https://doi.org/10.1109/BCTM.2014.6981312","url":null,"abstract":"This paper presents two 18.7 GHz low-noise amplifiers (LNAs) for radiometer applications designed in a SiGe technology featuring HBTs with peak fT / fMAX of 300/500 GHz. Back-side substrate etching is utilized to reduce inductor losses and improves the noise figure (NF) of the LNAs by an average of 0.12 dB across the measured band. At 18.7 GHz, the first LNA achieves 1.10 dB NF, 17.1 dBm OIP3, and 8.6 dB gain while consuming only 5 mW of power. The second LNA achieves 1.48 dB NF, 11.5 dBm OIP3, and 13.9 dB gain while consuming 10 mW of power. To the authors' best knowledge, these amplifiers have the lowest measured NF of all silicon-based LNAs at this frequency and are competitive with the best III-V LNAs.","PeriodicalId":423269,"journal":{"name":"2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)","volume":"78 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115657243","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Degradation and recovery of high-speed SiGe HBTs under very high reverse EB stress conditions 高速SiGe HBTs在非常高的反向EB应力条件下的降解和恢复
2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) Pub Date : 2014-12-11 DOI: 10.1109/BCTM.2014.6981282
G. Sasso, N. Rinaldi, G. Fischer, B. Heinemann
{"title":"Degradation and recovery of high-speed SiGe HBTs under very high reverse EB stress conditions","authors":"G. Sasso, N. Rinaldi, G. Fischer, B. Heinemann","doi":"10.1109/BCTM.2014.6981282","DOIUrl":"https://doi.org/10.1109/BCTM.2014.6981282","url":null,"abstract":"Hot-carrier induced degradation and post-stress recovery of 240/300 fT/fMAX SiGe HBTs are investigated. The investigation includes the impact of stress conditions and lateral scaling. Self-heating is employed as a means to investigate thermal-induced recovery activation and rate.","PeriodicalId":423269,"journal":{"name":"2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114605381","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
An enhanced 180nm millimeter-wave SiGe BiCMOS technology with fT/fMAX of 260/350GHz for reduced power consumption automotive radar IC's 增强型180nm毫米波SiGe BiCMOS技术，fT/fMAX为260/350GHz，用于降低功耗的汽车雷达IC
2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) Pub Date : 2014-12-11 DOI: 10.1109/BCTM.2014.6981292
J. John, V. Trivedi, J. Kirchgessner, D. Morgan, I. To, P. Welch
{"title":"An enhanced 180nm millimeter-wave SiGe BiCMOS technology with fT/fMAX of 260/350GHz for reduced power consumption automotive radar IC's","authors":"J. John, V. Trivedi, J. Kirchgessner, D. Morgan, I. To, P. Welch","doi":"10.1109/BCTM.2014.6981292","DOIUrl":"https://doi.org/10.1109/BCTM.2014.6981292","url":null,"abstract":"Several performance improvements on a 180nm SiGe:C BiCMOS technology targeted for improved millimeter-wave performance are described. SiGe HBT performance metrics, including fT, fMAX, and CML gate delay are improved 20-30%. fT/fMAX of 260/350GHz are achieved with a minimum gate delay of 3.2ps, without impacting the thermal budget of the technology. BEOL and ground plane optimization reduced transmission line loss to <;1dB/mm at ~80GHz.","PeriodicalId":423269,"journal":{"name":"2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)","volume":"50 23","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133784766","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
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