Degradation and recovery of high-speed SiGe HBTs under very high reverse EB stress conditions

2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) Pub Date : 2014-12-11 DOI:10.1109/BCTM.2014.6981282

G. Sasso, N. Rinaldi, G. Fischer, B. Heinemann

引用次数: 4

Abstract

Hot-carrier induced degradation and post-stress recovery of 240/300 fT/fMAX SiGe HBTs are investigated. The investigation includes the impact of stress conditions and lateral scaling. Self-heating is employed as a means to investigate thermal-induced recovery activation and rate.

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高速SiGe HBTs在非常高的反向EB应力条件下的降解和恢复

研究了240/300 fT/fMAX SiGe HBTs的热载流子诱导降解和应力后恢复。研究包括应力条件和横向结垢的影响。采用自加热作为研究热致回收激活和速率的手段。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)

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