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2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)最新文献

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Comparative study on light-induced negative-bias stress stabilities in amorphous In-Ga-Zn-O thin film transistors with photoinduced transient spectroscopy 用光致瞬态光谱法比较非晶in - ga - zn - o薄膜晶体管的光致负偏置应力稳定性
2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) Pub Date : 2016-07-06 DOI: 10.1109/AM-FPD.2016.7543697
Kazushi Hayashi, Mototaka Ochi, A. Hino, Hiroaki Tao, H. Goto, T. Kugimiya
{"title":"Comparative study on light-induced negative-bias stress stabilities in amorphous In-Ga-Zn-O thin film transistors with photoinduced transient spectroscopy","authors":"Kazushi Hayashi, Mototaka Ochi, A. Hino, Hiroaki Tao, H. Goto, T. Kugimiya","doi":"10.1109/AM-FPD.2016.7543697","DOIUrl":"https://doi.org/10.1109/AM-FPD.2016.7543697","url":null,"abstract":"A comparative study on light-induced negative-bias stress stabilities in amorphous In-Ga-Zn-O (a-IGZO) thin film transistors (TFTs) was performed by means of photoinduced transient spectroscopy (PITS). When the a-IGZO thin films were deposited with 4% O2 partial pressure (P/P), a dominant peak with a maximum of around 100 K was clearly observed from the sample. There was a flow rate of SiH4/N2O of 4/100 sccm for the ESL deposition, while the PITS spectra from the sample with a flow rate of SiH4/N2O of 6/150 sccm possessed a broader peak of around 115 K and an apparent shoulder of around 200-280 K was observed. This shoulder of around the 200-280 K was clarified when the a-IGZO thin film was deposited with an O2 P/P of 20 % In accordance with the changes in the electronic structures in the a-IGZO thin films due to the ESL deposition, the stability of the TFTs against the negative bias thermal Illumination stress (NBTIS) was degraded; the value of the Vth shift after the 2h-NBTIS test was increased from 2.5 to 6.0 V The decreasing the compensating acceptors and/or the increasing the hydrogen-related donors could be the origin of the negative Vth shift during the NBTIS test.","PeriodicalId":422453,"journal":{"name":"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114407349","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
In-cell capacitive touch panel structures and their readout circuits 单元内电容式触摸面板结构及其读出电路
2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) Pub Date : 2016-07-06 DOI: 10.1109/AM-FPD.2016.7543685
Seung-Hwan Lee, Jae-Sung An, Seongkwan Hong, O. Kwon
{"title":"In-cell capacitive touch panel structures and their readout circuits","authors":"Seung-Hwan Lee, Jae-Sung An, Seongkwan Hong, O. Kwon","doi":"10.1109/AM-FPD.2016.7543685","DOIUrl":"https://doi.org/10.1109/AM-FPD.2016.7543685","url":null,"abstract":"This paper proposes an in-cell capacitive touch panel structure and a readout circuit (ROIC) to sense the variation in self-capacitance using a small number of sensing lines. The proposed touch panel structure sequentially senses the variation in self-capacitance by adding a thin-film transistor and a scan signal line into each touch sensor so that the number of sensing lines can be reduced. In addition, the proposed ROIC enhances the signal-to-noise ratio (SNR) by compensating for the stray capacitance. The simulation results show that the proposed ROIC achieves an SNR of 57 dB. Moreover, the number of sensing lines per inch is 6.7 and 230.8 using the proposed active self-capacitive sensing method and the advanced in-cell touch (AIT) technology, respectively. Therefore, the proposed active self-capacitive sensing method reduces the number of sensing lines by 97.10 % compared with the AIT technology, while maintaining high sensitivity and multi-touch sensing capability.","PeriodicalId":422453,"journal":{"name":"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114378358","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
Self-aligned metal double-gate junctionless p-channel low-temperature polycrystalline-germanium thin-film transistors with a thin germanium channel on a glass substrate 自对准金属双栅无结p沟道低温多晶锗薄膜晶体管，在玻璃衬底上有薄锗沟道
2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) Pub Date : 2016-07-06 DOI: 10.1109/AM-FPD.2016.7543640
A. Hara, Yuya Nishimura, H. Ohsawa
{"title":"Self-aligned metal double-gate junctionless p-channel low-temperature polycrystalline-germanium thin-film transistors with a thin germanium channel on a glass substrate","authors":"A. Hara, Yuya Nishimura, H. Ohsawa","doi":"10.1109/AM-FPD.2016.7543640","DOIUrl":"https://doi.org/10.1109/AM-FPD.2016.7543640","url":null,"abstract":"Polyaystalline-germanium (poly-Ge) thin-film transistors (TFTs) are good candidates for next-generation TFTs for use in the backplane of flat-panel displays (FPDs). This is due to their superior electrical properties compared to those of Si and oxide semiconductors. However, poly-Ge shows a strong p-type characteristic; thus, it is not easy to reduce the leakage current using a single-gate (SG) structure. In this study, self-aligned metal double-gate (MeDG) junctionless (JL) p-channel (p-ch) low-temperature (LT) poly-Ge TFTs were fabricated on a glass substrate using a 15-nm-thick solid phase crystallized (SPC) poly-Ge film. Additionally, SG JL p-ch LT poly-Ge TFTs with 15-nm-thick SPC poly-Ge films were fabricated as reference TFTs. The self-aligned MeDG JL p-ch LT poly-Ge TFT shows superior performance compared to that of SG JL p-ch LT poly-Ge TFT.","PeriodicalId":422453,"journal":{"name":"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114981234","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Solar radiation forecast with machine learning 用机器学习预测太阳辐射
2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) Pub Date : 2016-07-06 DOI: 10.1109/AM-FPD.2016.7543604
X. Shao, Siyuan Lu, H. Hamann
{"title":"Solar radiation forecast with machine learning","authors":"X. Shao, Siyuan Lu, H. Hamann","doi":"10.1109/AM-FPD.2016.7543604","DOIUrl":"https://doi.org/10.1109/AM-FPD.2016.7543604","url":null,"abstract":"Renewable energy forecasting becomes increasingly important as the contribution of solar/wind power production to the electrical power grid constantly increases. Significant improvement in forecasting accuracy has been demonstrated by developing more sophisticated solar irradiance forecasting models using statistics and/or numerical weather predictions. In this presentation, we report the development of a machine-learning based multi-model blending approach for statistically combing multiple meteorological models to improve the accuracy of solar power forecasting. The system leverages upon multiple existing physical models for prediction including numerous atmospheric and cloud prediction models based on satellite imagery as well as numerical weather prediction (NWP) products.","PeriodicalId":422453,"journal":{"name":"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123656135","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
Evaluation of pH sensors using self-aligned four-terminal planar embedded metal double-gate low-temperature polycrystalline-silicon thin-film transistors on glass substrate 玻璃基板上自对准四端平面嵌入式金属双栅低温多晶硅薄膜晶体管的pH传感器评价
2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) Pub Date : 2016-07-06 DOI: 10.1109/AM-FPD.2016.7543602
H. Ohsawa, Hitoshi Suzuki, S. Kuwano, A. Hara
{"title":"Evaluation of pH sensors using self-aligned four-terminal planar embedded metal double-gate low-temperature polycrystalline-silicon thin-film transistors on glass substrate","authors":"H. Ohsawa, Hitoshi Suzuki, S. Kuwano, A. Hara","doi":"10.1109/AM-FPD.2016.7543602","DOIUrl":"https://doi.org/10.1109/AM-FPD.2016.7543602","url":null,"abstract":"This study presents an evaluation of pH sensors using self-aligned four-terminal planar embedded metal double-gate low-temperature polycrystalline-silicon thin-film transistors (TFTs) on a glass substrate. The voltage variation due to a change in pH is read as the variation in threshold voltage of the TFTs by connecting a TFT control gate to a glass electrode. Our experimental results confirm that these TFTs can be successfully used as pH sensors.","PeriodicalId":422453,"journal":{"name":"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"17 4","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120873251","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Hybrid-type temperature sensor using thin-film transistors generating rectangle output waveform — Operating confirmation by actual experiment 利用薄膜晶体管产生矩形输出波形的混合型温度传感器-经实际实验验证
2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) Pub Date : 2016-07-06 DOI: 10.1109/AM-FPD.2016.7543652
Hisashi Hayashi, Katsuya Kito, Shuhei Kitajima, Toshimasa Hori, T. Matsuda, M. Kimura
{"title":"Hybrid-type temperature sensor using thin-film transistors generating rectangle output waveform — Operating confirmation by actual experiment","authors":"Hisashi Hayashi, Katsuya Kito, Shuhei Kitajima, Toshimasa Hori, T. Matsuda, M. Kimura","doi":"10.1109/AM-FPD.2016.7543652","DOIUrl":"https://doi.org/10.1109/AM-FPD.2016.7543652","url":null,"abstract":"We have developed a hybrid-type temperature sensor using thin-film transistors generating rectangle output waveform. The advantages of the hybrid-type temperature sensor are that the large temperature dependence of the off-leakage current can be utilized, and simultaneously only a digital circuit is required to count the digital pulse. However, the conventional hybrid-type sensor has a disadvantage that the pulse width is too small to count. Therefore, we have developed a new hybrid-type temperature sensor in order to enlarge the pulse width. Although we previously confirmed the operation by circuit simulation, particularly in this presentation, we have made an actual circuit and observed a rectangle output waveform, namely, confirmed the correct operation by actual experiment.","PeriodicalId":422453,"journal":{"name":"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"100 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124776763","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Characteristics of amorphous In-Ga-Zn-O thin-film-transistors with channel layer deposited by bias sputtering 偏置溅射沉积非晶In-Ga-Zn-O薄膜晶体管的特性
2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) Pub Date : 2016-07-06 DOI: 10.1109/AM-FPD.2016.7543641
Man Zhang, Xiang Xiao, Xin Ju, Xiaodong Zhang, Shengdong Zhang
{"title":"Characteristics of amorphous In-Ga-Zn-O thin-film-transistors with channel layer deposited by bias sputtering","authors":"Man Zhang, Xiang Xiao, Xin Ju, Xiaodong Zhang, Shengdong Zhang","doi":"10.1109/AM-FPD.2016.7543641","DOIUrl":"https://doi.org/10.1109/AM-FPD.2016.7543641","url":null,"abstract":"The influence of substrate bias during sputtering on the amorphous indium-gallium-zinc-oxide (a-IGZO) film and back-channel-etch (BCE) a-IGZO TFT is investigated. A mediated substrate bias is benefit to the improvement of a-IGZO film. The BCE a-IGZO TFT with mediate substrate bias of -90 V exhibits good performances with a field effect mobility (μfe) of 7.45 cm<sup>2</sup>/V·s, a subthreshold swing (SS) of 0.52 V/Dec and an I<sub>on</sub>/I<sub>off</sub> current ratio of 10<sup>9</sup>. The gate-bias stress stability is improved by substrate bias with ΔV<sub>th</sub> was 1.76 V under PBS and -0.88 V under NBS.","PeriodicalId":422453,"journal":{"name":"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129340172","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Ultrahigh-performance poly-si thin film transistor using multi-line beam continuous-wave laser lateral crystallization 采用多线光束连续波激光横向结晶的超高性能多晶硅薄膜晶体管
2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) Pub Date : 2016-07-06 DOI: 10.1109/AM-FPD.2016.7543690
Thuy Nguyen, Mitsuhisa Hiraiwa, T. Hirata, S. Kuroki
{"title":"Ultrahigh-performance poly-si thin film transistor using multi-line beam continuous-wave laser lateral crystallization","authors":"Thuy Nguyen, Mitsuhisa Hiraiwa, T. Hirata, S. Kuroki","doi":"10.1109/AM-FPD.2016.7543690","DOIUrl":"https://doi.org/10.1109/AM-FPD.2016.7543690","url":null,"abstract":"(100) surface oriented poly-Si film on glass substrate has been a key requirement to realize high performance low temperature poly-Si thin film transistors (LTPS-TFTs). Using multi-line beam (MLB) continuous-wave laser lateral crystallization (CLC) with overlapping, (100)-dominantly oriented poly-Si film was realized with average grain size of approximately 20 μm × 2 μm in normal surface direction. Ultrahigh-performance LTPS-TFTs were achieved with a very high electron field effect mobility of μFE = 940 cm2/Vs, a high ON/OFF ratio of 105, threshold voltage of 0 V, and subthreshold slope of 0.12 V/dec. This approach is nearly comparable to single crystal Si transistor.","PeriodicalId":422453,"journal":{"name":"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129783522","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Recent progress on perovskite solar cells and our materials science 钙钛矿太阳能电池和材料科学的最新进展
2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) Pub Date : 2016-07-06 DOI: 10.1109/AM-FPD.2016.7543600
A. Wakamiya
{"title":"Recent progress on perovskite solar cells and our materials science","authors":"A. Wakamiya","doi":"10.1109/AM-FPD.2016.7543600","DOIUrl":"https://doi.org/10.1109/AM-FPD.2016.7543600","url":null,"abstract":"Perovskite solar cells represent cost-effective next generation printable photovoltaics. In a relatively short period, power conversion efficiencies (PCEs) in such cells have been substantially increased, mainly due to improvements of the fabrication protocols for the perovskite layer as well as the development of new materials for buffer layers. In this presentation, the recent progress and perspective on this promising new type of photovoltaics are introduced, including our approaches toward development of high PCE cells in terms of materials science.","PeriodicalId":422453,"journal":{"name":"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"35 14","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114100126","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Investigation of high efficiency methyl ammonium lead halide perovskite-Si tandem solar cell 高效甲基铵铅卤化钙钛矿硅串联太阳能电池的研究
2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) Pub Date : 2016-07-06 DOI: 10.1109/AM-FPD.2016.7543682
S. M. Iftiquar, J. Yi
{"title":"Investigation of high efficiency methyl ammonium lead halide perovskite-Si tandem solar cell","authors":"S. M. Iftiquar, J. Yi","doi":"10.1109/AM-FPD.2016.7543682","DOIUrl":"https://doi.org/10.1109/AM-FPD.2016.7543682","url":null,"abstract":"Methyl ammonium lead halide (CH3NH3PM3) is one of the most promising organic inorganic lead halide perovskite material that can be used as an active layer in photovoltaic solar cell. Its high photo sensitivity, carrier lifetime, diffusion length are few of the interesting characteristics useful in a such a device. We theoretically investigated a tandem solar cell, consisting of a perovskite type top cell and a crystalline silicon bottom cell and observed that the device efficiency can be as high as 24.9%.","PeriodicalId":422453,"journal":{"name":"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115291818","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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