偏置溅射沉积非晶In-Ga-Zn-O薄膜晶体管的特性

2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) Pub Date : 2016-07-06 DOI:10.1109/AM-FPD.2016.7543641

Man Zhang, Xiang Xiao, Xin Ju, Xiaodong Zhang, Shengdong Zhang

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引用次数: 0

摘要

研究了溅射过程中衬底偏压对非晶铟镓锌氧化物(a-IGZO)薄膜和反通道蚀刻(BCE) a-IGZO TFT的影响。介导的衬底偏压有利于改善A - igzo薄膜的性能。中间衬底偏置为-90 V的BCE a- igzo TFT具有良好的场效应迁移率(μfe)为7.45 cm2/V·s，亚阈值摆幅(SS)为0.52 V/Dec，离子/开关电流比为109。衬底偏置ΔVth在PBS下为1.76 V，在NBS下为-0.88 V，提高了栅偏置应力稳定性。

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Characteristics of amorphous In-Ga-Zn-O thin-film-transistors with channel layer deposited by bias sputtering

The influence of substrate bias during sputtering on the amorphous indium-gallium-zinc-oxide (a-IGZO) film and back-channel-etch (BCE) a-IGZO TFT is investigated. A mediated substrate bias is benefit to the improvement of a-IGZO film. The BCE a-IGZO TFT with mediate substrate bias of -90 V exhibits good performances with a field effect mobility (μfe) of 7.45 cm²/V·s, a subthreshold swing (SS) of 0.52 V/Dec and an I_on/I_off current ratio of 10⁹. The gate-bias stress stability is improved by substrate bias with ΔV_th was 1.76 V under PBS and -0.88 V under NBS.

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2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)

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