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Phase transformation of /spl beta/-FeSi/sub 2/-based alloys under in-situ high-temperature and high-pressure X-ray diffraction measurements 高温高压x射线衍射下/spl β /-FeSi/sub - 2基合金的相变
ICT 2005. 24th International Conference on Thermoelectrics, 2005. Pub Date : 2005-06-19 DOI: 10.1109/ICT.2005.1519962
Haiyan Chen, X. B. Zhao, Jianzhong Jiang, C. Lathe, H. Franz, Gabriele Karpinski, E. Mueller
{"title":"Phase transformation of /spl beta/-FeSi/sub 2/-based alloys under in-situ high-temperature and high-pressure X-ray diffraction measurements","authors":"Haiyan Chen, X. B. Zhao, Jianzhong Jiang, C. Lathe, H. Franz, Gabriele Karpinski, E. Mueller","doi":"10.1109/ICT.2005.1519962","DOIUrl":"https://doi.org/10.1109/ICT.2005.1519962","url":null,"abstract":"The dynamic behaviour of phase transformation in /spl beta/-FeSi/sub 2/ based thermoelectric materials Fe/sub 1-x/M/sub x/Si/sub 2+y/ (M = Mn or Co) has been studied by using differential scanning calorimetry (DSC) and in situ high-temperature and high-pressure X-ray powder diffraction measurements (EDXRD) using synchrotron radiation. The investigated materials were powders prepared by rapid solidification (melt spinning). It's found by DSC and EDXRD that the /spl alpha/+/spl epsi/ eutectic structures in the rapidly solidified alloys transform to /spl beta/ phase (/spl alpha/-Fe/sub 2/Si/sub 5/ + /spl epsi/-FeSi /spl rarr/ /spl beta/-FeSi/sub 2/) in a lower temperature range below 700/spl deg/C. The formed /spl beta/ phase decomposes reversely to /spl alpha/ and /spl epsi/ phase in a higher temperature range above 950/spl deg/C. The transformation temperatures T/sub 1/(/spl alpha/+/spl epsi//spl beta/) is greatly influenced by the heating rate. By EDXRD measurements, it is found that high pressures have a great influence on the phase transformation temperature T/sub 1/ and T/sub 2/ (/spl beta//spl rarr//spl alpha/+/spl epsi/). Different doping elements (Mn, Co, or Al) have also great influence on the phase transformation temperature. EDXRD has simulated the process of hot uniaxial pressing.","PeriodicalId":422400,"journal":{"name":"ICT 2005. 24th International Conference on Thermoelectrics, 2005.","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131119622","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
PbSe and PbTe epitaxial films alloyed with tin: potential thin film materials with high ZT around room temperature? 镀锡的PbSe和PbTe外延薄膜:室温下高ZT的潜在薄膜材料?
ICT 2005. 24th International Conference on Thermoelectrics, 2005. Pub Date : 2005-06-19 DOI: 10.1109/ICT.2005.1519889
J. Nurnus, H. Bottner, J. Konig, A. Lambrecht
{"title":"PbSe and PbTe epitaxial films alloyed with tin: potential thin film materials with high ZT around room temperature?","authors":"J. Nurnus, H. Bottner, J. Konig, A. Lambrecht","doi":"10.1109/ICT.2005.1519889","DOIUrl":"https://doi.org/10.1109/ICT.2005.1519889","url":null,"abstract":"For room temperature applications, normally V-VI-compounds with ZT values around 1 are used in the field of bulk thermoelectrics. In the case of thin film materials, several challenges arise from the complex crystal structure of these compounds due to strongly anisotropic thermoelectric transport parameters. This limits, or at least complicates the use of V-VI based thin films. Therefore, materials with a comparably simple crystal structure and isotropic transport properties are desirable. These needs are fulfilled in the case of IV-VI-compounds. Unfortunately, those materials suffer from their relatively low ZT of /spl sim/0.2 around room temperature. Here, we report on structural and in particular thermoelectric properties of molecular beam epitaxy grown PbSe and PbTe thin films alloyed with tin. It was found that increasing the tin concentration without changing the other growth parameters results in increased charge carrier concentrations and thermopower values. Special care was taken to evaluate the in-plane thermal conductivity of insulated free standing Pb/sub 1-x/Sn/sub x/Te and Pb/sub 1-x/Sn/sub x/Se thin films. As expected, also the lattice thermal conductivity decreases due to alloy scattering. Increasing the tin concentration is known to result in decreasing bandgaps. By this, the optimum operating temperature is shifted towards ambient temperature. All those effects strongly enhance the thermoelectric properties of Pb/sub 1-x/Sn/sub x/Te and Pb/sub 1-x/Sn/sub x/Se in the room temperature region. For tin contents of x/spl sim/0.08, ZT>0.6 were determined in both cases. Even higher ZT values should be achievable using e.g. adequate doping levels and/or quaternary Pb/sub 1-x/Sn/sub x/Te/sub 1-y/Se/sub y/ compounds.","PeriodicalId":422400,"journal":{"name":"ICT 2005. 24th International Conference on Thermoelectrics, 2005.","volume":"14 11","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120884153","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Low temperature thermoelectric properties of Ca/sub x/Co/sub 4/Sb/sub 12/ skutterudites Ca/sub x/Co/sub 4/Sb/sub 12/ skutterudites的低温热电性质
ICT 2005. 24th International Conference on Thermoelectrics, 2005. Pub Date : 2005-06-19 DOI: 10.1109/ICT.2005.1519908
M. Puyet, B. Lenoir, A. Dauscher, H. Scherrer, C. Bellouard, J. Hejtmánek
{"title":"Low temperature thermoelectric properties of Ca/sub x/Co/sub 4/Sb/sub 12/ skutterudites","authors":"M. Puyet, B. Lenoir, A. Dauscher, H. Scherrer, C. Bellouard, J. Hejtmánek","doi":"10.1109/ICT.2005.1519908","DOIUrl":"https://doi.org/10.1109/ICT.2005.1519908","url":null,"abstract":"Electrical resistivity, thermoelectric power, thermal conductivity, and dimensionless figure of merit of the partially filled skutterudites CaxCo4Sb12, with x = 0, 0.03, 0.05, 0.08, and 0.20, have been studied in the low temperature range, from 4.2 to 300 K. The compounds have been prepared by a powder metallurgy route. We find that the insertion of Ca in the voids of the skutterudite structure has a dramatic effect on all the transport properties. Qualitative analysis of the physical properties was realized and the results are discussed as a function of the Ca filling fraction and compared to data obtained with other CoSb3 partially filled skutterudites.","PeriodicalId":422400,"journal":{"name":"ICT 2005. 24th International Conference on Thermoelectrics, 2005.","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123659920","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Performance and application of thermoelectric modules for consumer use fabricated with (Bi,Sb)/sub 2/(Te,Se)/sub 3/ using a rapid solidification technique 用快速凝固技术制备(Bi,Sb)/sub 2/(Te,Se)/sub 3/的消费类热电模块的性能与应用
ICT 2005. 24th International Conference on Thermoelectrics, 2005. Pub Date : 2005-06-19 DOI: 10.1109/ICT.2005.1519961
Y. Horio, T. Hayashi, J. Suzuki, M. Sekine, N. Kamimura, T. Tachibana, N. Tomita
{"title":"Performance and application of thermoelectric modules for consumer use fabricated with (Bi,Sb)/sub 2/(Te,Se)/sub 3/ using a rapid solidification technique","authors":"Y. Horio, T. Hayashi, J. Suzuki, M. Sekine, N. Kamimura, T. Tachibana, N. Tomita","doi":"10.1109/ICT.2005.1519961","DOIUrl":"https://doi.org/10.1109/ICT.2005.1519961","url":null,"abstract":"The thermoelectric modules for consumer use with (Bi,Sb)/sub 2/(Te,Se)/sub 3/ compounds have been developed to convert low grade and waste heat into electricity. Bismuth-telluride-based thermoelectric compounds with fine grains and unidirectional crystal orientation, which were prepared using a rapid solidification technique, exhibited high performance at a temperature range of 298 K to 473 K. With a temperature difference of 150 K (Tc=323 K, Th=473 K), a maximum conversion efficiency of 5.6% was obtained. An advanced thermoelectric module was applied to recover the waste heat from a bulb in a projector system. The proto-type projector installed with the thermoelectric power generating system was developed to operate cooling fans and other electric devices.","PeriodicalId":422400,"journal":{"name":"ICT 2005. 24th International Conference on Thermoelectrics, 2005.","volume":"103 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122894884","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Effect of wall airflow restriction on heat-sink performance with thermoelectric coolers 壁面气流限制对热电冷却器散热性能的影响
ICT 2005. 24th International Conference on Thermoelectrics, 2005. Pub Date : 2005-06-19 DOI: 10.1109/ICT.2005.1519887
P. G. Lau, T. Ritzer
{"title":"Effect of wall airflow restriction on heat-sink performance with thermoelectric coolers","authors":"P. G. Lau, T. Ritzer","doi":"10.1109/ICT.2005.1519887","DOIUrl":"https://doi.org/10.1109/ICT.2005.1519887","url":null,"abstract":"Thermoelectric cold plate coolers with fan-cooled heat sinks are sometimes used on bench tops in which the cold plate is facing upwards and is parallel with the bench top. The best performance from the cooler is usually achieved when the tubeaxial fan forces air over the heat sink perpendicular to the fin base. The airflow then splits into two streams to exhaust out both ends of the heat sink. However, additional consideration must be given to the airflow restriction to the heat sink that is caused by the relative proximity of the fan to the bench top itself. The amount of airflow restriction depends on the distance between the fan inlet and the bench top which in turn affects the cooler's performance. Various heat sink and fan combinations in the perpendicular-airflow arrangement were examined for heat transfer performance in relation to the distance between the fan inlet and wall. An empirical equation was developed to correlate the impact on thermoelectric cooling performance with the distance between the fan inlet and the wall.","PeriodicalId":422400,"journal":{"name":"ICT 2005. 24th International Conference on Thermoelectrics, 2005.","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125622795","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Solidification processing of Te-Sb-Pb alloys for thermoelectric applications 热电用Te-Sb-Pb合金的凝固工艺
ICT 2005. 24th International Conference on Thermoelectrics, 2005. Pub Date : 2005-06-19 DOI: 10.1109/ICT.2005.1519906
T. Ikeda, H. Azizgolshani, S. Haile, G. J. Snyder, V. Ravi
{"title":"Solidification processing of Te-Sb-Pb alloys for thermoelectric applications","authors":"T. Ikeda, H. Azizgolshani, S. Haile, G. J. Snyder, V. Ravi","doi":"10.1109/ICT.2005.1519906","DOIUrl":"https://doi.org/10.1109/ICT.2005.1519906","url":null,"abstract":"A solidification processing approach to the refinement of lead-tellurium-antimony alloy microstructure is described. Liquid alloys with eutectic, hyper-eutectic and hypo-eutectic compositions (relative to lead) were cooled to the solid state in three distinct ways, i.e. by water quenching, air cooling and furnace cooling. The structures of the alloys resulting from the three different solidification paths were examined using electron microscopy and the micrographs were quantified. Classical solidification methods were used to interpret the structures in relation to the cooling histories.","PeriodicalId":422400,"journal":{"name":"ICT 2005. 24th International Conference on Thermoelectrics, 2005.","volume":"65 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128968135","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
The effect of the electron energy spectrum on electronic efficiency and power in thermionic and thermoelectric devices 热电子和热电器件中电子能谱对电子效率和功率的影响
ICT 2005. 24th International Conference on Thermoelectrics, 2005. Pub Date : 2005-06-19 DOI: 10.1109/ICT.2005.1519984
M. O'Dwyer, T. Humphrey, R. Lewis, C. Zhang
{"title":"The effect of the electron energy spectrum on electronic efficiency and power in thermionic and thermoelectric devices","authors":"M. O'Dwyer, T. Humphrey, R. Lewis, C. Zhang","doi":"10.1109/ICT.2005.1519984","DOIUrl":"https://doi.org/10.1109/ICT.2005.1519984","url":null,"abstract":"We show that the details of the energy spectrum of transmitted electrons in thermionic and thermoelectric devices have a significant impact on their performance. We distinguish between traditional thermionic devices where electron momentum is filtered in the direction of transport only and a second type, in which the electron filtering occurs according to total electron momentum. Our main result is that the electronic efficiency of a device is not only improved by reducing the width of the transmission filter, but also strongly depends on whether the transmission probability rises sharply from zero to full transmission. Finally, we comment on the implications of the effect the shape of the electron energy spectrum has on the efficiency of thermoelectric devices and suggest an experimental measure for providing insight into the nature of the electron energy spectrum.","PeriodicalId":422400,"journal":{"name":"ICT 2005. 24th International Conference on Thermoelectrics, 2005.","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132823557","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Sticking-free growth of bulk Mg/sub 2/Si crystals by the vertical bridgman method and their thermoelectric properties 垂直桥曼法生长Mg/sub /Si块状晶体及其热电性能
ICT 2005. 24th International Conference on Thermoelectrics, 2005. Pub Date : 2005-06-19 DOI: 10.1109/ICT.2005.1519896
J. Soga, T. Iida, Y. Higuchi, T. Sakuma, K. Makino, M. Akasaka, T. Nemoto, Y. Takanashi
{"title":"Sticking-free growth of bulk Mg/sub 2/Si crystals by the vertical bridgman method and their thermoelectric properties","authors":"J. Soga, T. Iida, Y. Higuchi, T. Sakuma, K. Makino, M. Akasaka, T. Nemoto, Y. Takanashi","doi":"10.1109/ICT.2005.1519896","DOIUrl":"https://doi.org/10.1109/ICT.2005.1519896","url":null,"abstract":"Melt growth of Mg2Si was conducted using the vertical Bridgman growth method. Because magnesium is highly reactive at the growth temperature (1358 K), crucible materials were chosen to avoid chemical reactions and sticking between the crucibles, the molten Mg2Si and magnesium vapor. Crucibles made of alumina, pyrolytic boron nitride (pBN), and hexagonal boron nitride (hBN) were examined. The use of a pBN crucible enabled in the suppression of chemical reactions involving molten Mg2Si and vaporized magnesium at elevated growth temperatures, resulting in no sticking of the grown crystal to the inner wall of the crucible. While the measured conductivity for samples grown using an alumina crucible was n-type for all of the temperatures that were investigated, the samples that were grown using a pBN crucible exhibited p-type conductivity. This correlates closely with unintentional boron incorporation during the growth process.","PeriodicalId":422400,"journal":{"name":"ICT 2005. 24th International Conference on Thermoelectrics, 2005.","volume":"64 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133380504","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Finite elements for thermoelectric device analysis in ANSYS 热电器件有限元分析
ICT 2005. 24th International Conference on Thermoelectrics, 2005. Pub Date : 2005-06-19 DOI: 10.1109/ICT.2005.1519922
Elena E. Antonova, David C. Looman
{"title":"Finite elements for thermoelectric device analysis in ANSYS","authors":"Elena E. Antonova, David C. Looman","doi":"10.1109/ICT.2005.1519922","DOIUrl":"https://doi.org/10.1109/ICT.2005.1519922","url":null,"abstract":"A new set of ANSYS coupled-field elements enables users to accurately and efficiently analyze thermoelectric devices. This paper reviews the finite element formulation, which, in addition to Joule heating, includes Seebeck, Peltier, and Thomson effects. Examples of steady-state and transient simulations of a thermoelectric generator and a single-stage Peltier cooler are presented for thermoelectric analysis verification. An analysis of a multistage thermoelectric cooler is performed to demonstrate ANSYS parametric analysis capability.","PeriodicalId":422400,"journal":{"name":"ICT 2005. 24th International Conference on Thermoelectrics, 2005.","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133478439","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 258
Preparation and thermoelectric properties of Co/sub x/Fe/sub y/Ni/sub 2/Sb/sub 3/ (x+y+z=1, x=0 to 1, y=z) sintered samples Co/sub x/Fe/sub y/Ni/sub 2/Sb/sub 3/ (x+y+z=1, x=0 ~ 1, y=z)烧结试样的制备及热电性能
ICT 2005. 24th International Conference on Thermoelectrics, 2005. Pub Date : 2005-06-19 DOI: 10.1109/ICT.2005.1519904
T. Souma, M. Ohtaki
{"title":"Preparation and thermoelectric properties of Co/sub x/Fe/sub y/Ni/sub 2/Sb/sub 3/ (x+y+z=1, x=0 to 1, y=z) sintered samples","authors":"T. Souma, M. Ohtaki","doi":"10.1109/ICT.2005.1519904","DOIUrl":"https://doi.org/10.1109/ICT.2005.1519904","url":null,"abstract":"Eleven sintered samples of the CoxFeyNizSb3 (x+y+z=1, x=0 to 1, y=z) compounds have been successfully prepared using hot-pressing technique and the thermoelectric properties of the samples have been measured between 300 and 700 K. The purities and densities for the sintered samples exceed 93 mass% and 80 % of XRD density, respectively. The thermopower of the compounds is in the range of -150 to 200 µW/K and shifts from p-type to n-type with increasing the value of y+z. The electrical conductivity for the samples shows a semiconductor like behavior. The power factors for the present samples show several µW/K 2 cm. The possibility for improvement in the thermoelectric performance will be dicussed by optimizing the Fe/Ni ratio in the compounds.","PeriodicalId":422400,"journal":{"name":"ICT 2005. 24th International Conference on Thermoelectrics, 2005.","volume":"96 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131031005","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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