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International Conference onIndium Phosphide and Related Materials, 2003.最新文献

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Importance of velocity modulation: analysis and experimental verification 调频的重要性:分析与实验验证
International Conference onIndium Phosphide and Related Materials, 2003. Pub Date : 2003-05-12 DOI: 10.1109/ICIPRM.2003.1205302
B. Willén, M. Rohner
{"title":"Importance of velocity modulation: analysis and experimental verification","authors":"B. Willén, M. Rohner","doi":"10.1109/ICIPRM.2003.1205302","DOIUrl":"https://doi.org/10.1109/ICIPRM.2003.1205302","url":null,"abstract":"Velocity modulation, i.e. current dependent electron mobility, is claimed to be essential for the HF-potential of InP-HBTs in that it significantly reduces charge storage effects of the collector. The reduction is related to operation in base pushout, and high-speed InP-HBTs are regularly operated in this mode to obtain optimum performance. As a consequence, dynamic effects of base pushout may cause a resonance in the unilateral power gain for advanced devices, by that obstructing estimation of the maximum frequency of oscillation.","PeriodicalId":414745,"journal":{"name":"International Conference onIndium Phosphide and Related Materials, 2003.","volume":"98 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-05-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127124598","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Ultrafast carrier trapping and recombination in high resistivity ion implanted InP 高电阻率离子注入InP的超快载流子俘获与复合
International Conference onIndium Phosphide and Related Materials, 2003. Pub Date : 2003-05-12 DOI: 10.1109/ICIPRM.2003.1205411
A. Gaarder, S. Marcinkevičius, C. Carmody, H. Tan, C. Jagadish
{"title":"Ultrafast carrier trapping and recombination in high resistivity ion implanted InP","authors":"A. Gaarder, S. Marcinkevičius, C. Carmody, H. Tan, C. Jagadish","doi":"10.1109/ICIPRM.2003.1205411","DOIUrl":"https://doi.org/10.1109/ICIPRM.2003.1205411","url":null,"abstract":"MeV P/sup +/ implanted and annealed p-InP and Fe/sup +/ implanted and annealed semi-insulating InP have both been shown to produce the high resistivity, good mobility and ultrafast optical response desired for ultrafast photodetectors. Low temperature annealing was found to yield the fastest response times-130 fs for Fe/sup +/ implanted and 400 fs for P/sup +/ implanted InP, as well as resistivities of the order of 10/sup 6//spl Omega//square. For devices, the most advantageous treatment is implanting p-InP with P/sup +/ in the dose regime where type conversion occurs, with subsequent annealing at 500/spl deg/C. This produces high resistivities and ultrafast carrier trapping times that are only marginally dose dependent.","PeriodicalId":414745,"journal":{"name":"International Conference onIndium Phosphide and Related Materials, 2003.","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-05-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124895844","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Towards planar processing for InP DHBTs InP dhbt的平面加工研究
International Conference onIndium Phosphide and Related Materials, 2003. Pub Date : 2003-05-12 DOI: 10.1109/ICIPRM.2003.1205311
R. Kopf, W. Sung, N. Weimann, Y. Chen, V. Houtsma, Y. Yang
{"title":"Towards planar processing for InP DHBTs","authors":"R. Kopf, W. Sung, N. Weimann, Y. Chen, V. Houtsma, Y. Yang","doi":"10.1109/ICIPRM.2003.1205311","DOIUrl":"https://doi.org/10.1109/ICIPRM.2003.1205311","url":null,"abstract":"Silicon-like planar InP DHBTs have always been the goal for researchers to enhance their integration capabilities. In addition, heat dissipation for large-scale device integration will be an issue for the traditional mesa DHBT structure while maintaining high-speed performance. We demonstrate that by developing ion-implantation technologies, planar InP DHBTs can be built successfully.","PeriodicalId":414745,"journal":{"name":"International Conference onIndium Phosphide and Related Materials, 2003.","volume":"172 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-05-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123288395","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Effect of deposition method on the density of InAs/InGaAs quantum dot 沉积方法对InAs/InGaAs量子点密度的影响
International Conference onIndium Phosphide and Related Materials, 2003. Pub Date : 2003-05-12 DOI: 10.1109/ICIPRM.2003.1205414
F. Chang, T. Wu, Hao-Hsiung Lin
{"title":"Effect of deposition method on the density of InAs/InGaAs quantum dot","authors":"F. Chang, T. Wu, Hao-Hsiung Lin","doi":"10.1109/ICIPRM.2003.1205414","DOIUrl":"https://doi.org/10.1109/ICIPRM.2003.1205414","url":null,"abstract":"InAs self-organized quantum dots covered with In/sub 0.33/Ga/sub 0.67/As layer have been grown on GaAs substrates by gas-source molecular beam epitaxy. With three different deposition methods for growing the InGaAs capping layer, the quantum-dot density can be controllably changed from 2.3/spl times/10/sup 10/ to 1.7/spl times/10/sup 11/ cm/sup -2/. Photoluminescence at 1,318nm of quantum dots with the dot density as high as 7.6/spl times/10/sup 10/ cm/sup -2/ can be achieved by sub-monolayer deposition (SMD) capping method. As-cleaved 3.98-mm-long laser diode using triple stacks of InAs/InGaAs quantum dots with SMD method demonstrates a lasing wavelength of 1,305nm and a threshold current density of 360A/cm/sup 2/. The ground-state saturation gain of 16.6cm/sup -1/ is achieved due to the high dot density.","PeriodicalId":414745,"journal":{"name":"International Conference onIndium Phosphide and Related Materials, 2003.","volume":"70 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-05-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123438602","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
GaAs-based quantum-cascade laser diodes 基于gaas的量子级联激光二极管
International Conference onIndium Phosphide and Related Materials, 2003. Pub Date : 2003-05-12 DOI: 10.1109/ICIPRM.2003.1205358
S. Anders, E. Gornik, W. Schrenk, G. Strasser
{"title":"GaAs-based quantum-cascade laser diodes","authors":"S. Anders, E. Gornik, W. Schrenk, G. Strasser","doi":"10.1109/ICIPRM.2003.1205358","DOIUrl":"https://doi.org/10.1109/ICIPRM.2003.1205358","url":null,"abstract":"In this contribution, we discuss our recent results on GaAs-based quantum cascade lasers. In general, we strive to achieve high-power room temperature operation. The best performance in GaAs-based Fabry-Perot quantum cascade laser diodes (pulsed operation) show peak powers of more than 3W at liquid nitrogen temperatures and more than 300 mW at room temperature at an emission wavelength of 9 microns. Lasing up to 100/spl deg/C lattice temperature was detected. Single mode emitting distributed feedback lasers show more than 80mW optical peak power at room temperature. Furthermore, to explore the spectral behavior of the lasers, we processed cavities of different geometries, that is, disk- and ring-shaped cavities.","PeriodicalId":414745,"journal":{"name":"International Conference onIndium Phosphide and Related Materials, 2003.","volume":"225 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-05-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115557248","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
1.3 /spl mu/m VCSELs for fiber-optical communication systems 1.3 /spl mu/m vcsel用于光纤通信系统
International Conference onIndium Phosphide and Related Materials, 2003. Pub Date : 2003-05-12 DOI: 10.1109/ICIPRM.2003.1205299
H. Riechert, L. Geelhaar, G. Ebbinghaus, A. Lima, A. Ramakrishnan
{"title":"1.3 /spl mu/m VCSELs for fiber-optical communication systems","authors":"H. Riechert, L. Geelhaar, G. Ebbinghaus, A. Lima, A. Ramakrishnan","doi":"10.1109/ICIPRM.2003.1205299","DOIUrl":"https://doi.org/10.1109/ICIPRM.2003.1205299","url":null,"abstract":"Optical data transmission will greatly benefit by taking the step from the transmission wavelength of 0.85 /spl mu/m to 1.3 /spl mu/m, since this will allow a much extended transmission distance at high data rates as well as greatly enhanced eye-safety. Vertical cavity surface emitting lasers (VCSELs) are key components for low-cost systems (such as Gb Ethernet). This paper therefore addresses the status of VCSELs emitting around 1.3 /spl mu/m. The various approaches based on both GaAs- and InP-based active regions will be outlined and their respective advantages and drawbacks will be discussed. At present, devices based on InGaAsN-GaAs quantum wells offer the highest promise due to their superior optical output powers at both room temperature and at elevated temperatures. At the same time they benefit from the utilisation of standard GaAs/AlAs VCSEL technology.","PeriodicalId":414745,"journal":{"name":"International Conference onIndium Phosphide and Related Materials, 2003.","volume":"89 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-05-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122657845","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
High resolution electrical characterization of laterally overgrown epitaxial InP 横向过度生长外延InP的高分辨率电学特性
International Conference onIndium Phosphide and Related Materials, 2003. Pub Date : 2003-05-12 DOI: 10.1109/ICIPRM.2003.1205443
S. Anand, Y. Sun, S. Lourdudoss, M.W. Xu, W. Vandervorst
{"title":"High resolution electrical characterization of laterally overgrown epitaxial InP","authors":"S. Anand, Y. Sun, S. Lourdudoss, M.W. Xu, W. Vandervorst","doi":"10.1109/ICIPRM.2003.1205443","DOIUrl":"https://doi.org/10.1109/ICIPRM.2003.1205443","url":null,"abstract":"Dopant incorporation in epitaxial lateral over-growth of InP is investigated by scanning capacitance microscopy (SCM) and scanning spreading resistance microscopy (SSRM). Dramatic variations in doping contrast in the laterally overgrown regions are observed both in SCM and SSRM measurements implying highly inhomogeneous dopant incorporation. The observed doping variations are explained by surface bonding configurations in the different emerging planes during growth. The results show that methods such as SCM and SSRM not only provide detailed electrical information on a nanometer scale, but also give insights into the growth mechanisms.","PeriodicalId":414745,"journal":{"name":"International Conference onIndium Phosphide and Related Materials, 2003.","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-05-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130418228","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
New multiwafer gas source MBE system for flexible and cost effective fabrication of GaInAsP/InP based opto-electronic devices 新型多晶圆气源MBE系统，用于灵活和经济地制造基于GaInAsP/InP的光电器件
International Conference onIndium Phosphide and Related Materials, 2003. Pub Date : 2003-05-12 DOI: 10.1109/ICIPRM.2003.1205309
F. Lelarge, F. Gaborit, J. Gentner
{"title":"New multiwafer gas source MBE system for flexible and cost effective fabrication of GaInAsP/InP based opto-electronic devices","authors":"F. Lelarge, F. Gaborit, J. Gentner","doi":"10.1109/ICIPRM.2003.1205309","DOIUrl":"https://doi.org/10.1109/ICIPRM.2003.1205309","url":null,"abstract":"Wavelength emission of Ga/sub x/In/sub 1-x/As/sub y/P/sub 1-y//InP multiple quantum wells (MQW's) heterostructures -town in a multiwafer Gas Source Molecular Beam Epitaxy (GSMBE) is studied in details. Excellent photoluminescence wavelength uniformity is reported in 4/spl times/2-inch and 1/spl times/4-inch configurations, demonstrating the compatibility of GSMBE process with large scale 1.55 /spl mu/m telecom laser production. A strong dependence of wavelength dispersion on group-V to group-III ratio is reported and analyzed qualitatively.","PeriodicalId":414745,"journal":{"name":"International Conference onIndium Phosphide and Related Materials, 2003.","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-05-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123814940","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
InGaAlAs selective-area growth on an InP substrate by metalorganic vapor phase epitaxy 用金属有机气相外延在InP衬底上生长InGaAlAs选择性面积
International Conference onIndium Phosphide and Related Materials, 2003. Pub Date : 2003-05-12 DOI: 10.1109/ICIPRM.2003.1205438
T. Tsuchiya, J. Shimizu, M. Shirai, M. Aoki
{"title":"InGaAlAs selective-area growth on an InP substrate by metalorganic vapor phase epitaxy","authors":"T. Tsuchiya, J. Shimizu, M. Shirai, M. Aoki","doi":"10.1109/ICIPRM.2003.1205438","DOIUrl":"https://doi.org/10.1109/ICIPRM.2003.1205438","url":null,"abstract":"In the case of InGaAlAs selective-area growth (SAG), when the aluminum content is high (Al: 0.48), flatness at the mask edge degrades and compositional change in the selective region increases. On the other hand, when the aluminum content is low (Al: 0.16), a flat growth plane is formed and no spike growth at the mask edge appears. Moreover, for a multiple-quantum-well structure, the PL peak intensity in the selective region is similar to that in the non-selective region.","PeriodicalId":414745,"journal":{"name":"International Conference onIndium Phosphide and Related Materials, 2003.","volume":"124 2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-05-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114309432","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Thermal limitations of InP HBT's in 80 and 160 Gbits/sup -1/ IC's 80gbits /sup -1/ IC中InP HBT的热限制
International Conference onIndium Phosphide and Related Materials, 2003. Pub Date : 2003-05-12 DOI: 10.1109/ICIPRM.2003.1205338
I. Harrison, M. Dahlstrom, S. Krishnan, Z. Griffith, Y. Kim, M. Rodwell
{"title":"Thermal limitations of InP HBT's in 80 and 160 Gbits/sup -1/ IC's","authors":"I. Harrison, M. Dahlstrom, S. Krishnan, Z. Griffith, Y. Kim, M. Rodwell","doi":"10.1109/ICIPRM.2003.1205338","DOIUrl":"https://doi.org/10.1109/ICIPRM.2003.1205338","url":null,"abstract":"A 3D thermal model based on finite elements has been developed for the analysis of the thermal resistance of InP heterojunction bipolar transistors. The model was verified by comparing simulated and experimental results. The simulations also show that the maximum temperature in the device can be significantly higher than the experimentally determined base-emitter junction temperature. By applying scaling laws, a road map for 80Gbit/s and 160Gbit/s devices is presented. Simulations show that devices suitable for 160Gbit/s circuits will be thermally possible if the InGaAs etch stop or contacting layer is removed from the sub collector.","PeriodicalId":414745,"journal":{"name":"International Conference onIndium Phosphide and Related Materials, 2003.","volume":"43 11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-05-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125756881","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
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