{"title":"调频的重要性:分析与实验验证","authors":"B. Willén, M. Rohner","doi":"10.1109/ICIPRM.2003.1205302","DOIUrl":null,"url":null,"abstract":"Velocity modulation, i.e. current dependent electron mobility, is claimed to be essential for the HF-potential of InP-HBTs in that it significantly reduces charge storage effects of the collector. The reduction is related to operation in base pushout, and high-speed InP-HBTs are regularly operated in this mode to obtain optimum performance. As a consequence, dynamic effects of base pushout may cause a resonance in the unilateral power gain for advanced devices, by that obstructing estimation of the maximum frequency of oscillation.","PeriodicalId":414745,"journal":{"name":"International Conference onIndium Phosphide and Related Materials, 2003.","volume":"98 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-05-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Importance of velocity modulation: analysis and experimental verification\",\"authors\":\"B. Willén, M. Rohner\",\"doi\":\"10.1109/ICIPRM.2003.1205302\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Velocity modulation, i.e. current dependent electron mobility, is claimed to be essential for the HF-potential of InP-HBTs in that it significantly reduces charge storage effects of the collector. The reduction is related to operation in base pushout, and high-speed InP-HBTs are regularly operated in this mode to obtain optimum performance. As a consequence, dynamic effects of base pushout may cause a resonance in the unilateral power gain for advanced devices, by that obstructing estimation of the maximum frequency of oscillation.\",\"PeriodicalId\":414745,\"journal\":{\"name\":\"International Conference onIndium Phosphide and Related Materials, 2003.\",\"volume\":\"98 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-05-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Conference onIndium Phosphide and Related Materials, 2003.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.2003.1205302\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Conference onIndium Phosphide and Related Materials, 2003.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.2003.1205302","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Importance of velocity modulation: analysis and experimental verification
Velocity modulation, i.e. current dependent electron mobility, is claimed to be essential for the HF-potential of InP-HBTs in that it significantly reduces charge storage effects of the collector. The reduction is related to operation in base pushout, and high-speed InP-HBTs are regularly operated in this mode to obtain optimum performance. As a consequence, dynamic effects of base pushout may cause a resonance in the unilateral power gain for advanced devices, by that obstructing estimation of the maximum frequency of oscillation.
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