B. Kasprowicz, E. Gallagher, Andrew Wall, L. Melvin, Masashi Sunako, T. Heil
{"title":"Panel Discussion: Mask readiness for 3nm and beyond: a mask supplier’s perspective","authors":"B. Kasprowicz, E. Gallagher, Andrew Wall, L. Melvin, Masashi Sunako, T. Heil","doi":"10.1117/12.2618132","DOIUrl":"https://doi.org/10.1117/12.2618132","url":null,"abstract":"As EUV is adopted by more companies, the insertion strategy and timing begin to drive new mask requirements. Traditional lithography extensions employed for DUV may now appear with EUV, from ILT to PSM to aggressive use of pellicles. Looking beyond was has been successful with EUV HVM and towards what we anticipate the requirements will be for the future, this panel will provide a suppliers perspective on where they believe the mask infrastructure stands to support low-k1 imaging for 33NA today and the initial path to support 55NA tomorrow.","PeriodicalId":412383,"journal":{"name":"Photomask Technology 2021","volume":"98 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122511839","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"A general formula for deep learning success in semiconductor manufacturing","authors":"A. Fujimura, A. Baranwal","doi":"10.1117/12.2603096","DOIUrl":"https://doi.org/10.1117/12.2603096","url":null,"abstract":"This is a management overview of our experience in how to apply deep learning for semiconductor manufacturing projects. \u0000 \u0000Deep learning is a transformative software technique, largely enabled by \"useful waste\" that is now possible with Peta-FLOPS level computing available with GPUs. DL has achieved many \"firsts\" that tens of years of effort by the best computer scientists could not achieve before. But production deployment of DL projects in semiconductor manufacturing including mask manufacturing has been difficult to attain. There has been a number of successes reported at this conference and elsewhere, but a common theme in deep learning papers in our field is the lack of availability of a large amount of data. Deep learning needs lots of data to train with because it is a pattern matching technique. It needs to see enough patterns to recognize all the situations a production mask might contain. In addition, deep learning programmers improve the network by adding data to the training data set to disambiguate where the network is confused. it is essential to be able to add any kind of data at will quickly to improve the success rate of a deep learning network. In semiconductor manufacturing, real data is hard to come by because of confidentiality requirements and also because of the expense of generating masks and wafers. A key ingredient to the general formula for deep learning success in semiconductor manufacturing is to use digital twins to generate data at will. It is time consuming, resource intensive, and expensive to set up. But it is necessary to create a deep learning capability that can be deployed in production. We will conclude with an overview of the other necessary conditions for deep learning success.","PeriodicalId":412383,"journal":{"name":"Photomask Technology 2021","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129085852","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Redefining innovation during The Renaissance of Computing","authors":"Christine Dunbar","doi":"10.1117/12.2605755","DOIUrl":"https://doi.org/10.1117/12.2605755","url":null,"abstract":"","PeriodicalId":412383,"journal":{"name":"Photomask Technology 2021","volume":"67 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131371594","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
I. Fukasawa, Y. Ikebe, T. Aizawa, T. Shoki, T. Onoue
{"title":"EUV attenuated phase shift mask: development and characterization of mask properties","authors":"I. Fukasawa, Y. Ikebe, T. Aizawa, T. Shoki, T. Onoue","doi":"10.1117/12.2606239","DOIUrl":"https://doi.org/10.1117/12.2606239","url":null,"abstract":"Toward logic 3nm and beyond, mask 3D effect and stochastic failure are main issues in EUV lithography. Alternative absorber material is required to mitigate those issues. EUV attenuated phase shift type absorber with low n value enables to achieve higher NILS due to phase cancellation effect. And much better imaging performance can be expected. We developed candidate attenuated phase shift type absorbers and evaluated these blank and mask properties. In this paper, we will report on those blank and mask properties for the candidate phase shift type absorbers.","PeriodicalId":412383,"journal":{"name":"Photomask Technology 2021","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-09-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114196569","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A. Baranwal, Suhas Pillai, T. Nguyen, J. Yashima, Jim Dewitt, N. Nakayamada, A. Fujimura
{"title":"An SEM-based deep defect classification system for VSB mask writer that works with die-to-die and die-to-database inspection methods using multiple digital twins built with the state-of-the-art neural networks","authors":"A. Baranwal, Suhas Pillai, T. Nguyen, J. Yashima, Jim Dewitt, N. Nakayamada, A. Fujimura","doi":"10.1117/12.2601004","DOIUrl":"https://doi.org/10.1117/12.2601004","url":null,"abstract":"The two standard reticle defect inspection methods are die-to-die and die-to-database. The die-to-die inspection method compares images from the two dice on the same reticle to identify any defect. However, the die-to-database inspection method compares images from the reticle with the design data (CAD). The previous year, we built an SEM-based VSB writer classification system for die-to-die inspection that used state-of-the-art deep learning models to identify errors such as shape, position, and dose [1]. Using the deep neural networks and DL-based SEM digital twins [2], we showed better accuracy than the average human expert in classifying SEM-based defects. However, a limitation remained that the DL model wasn’t aware of chrome and glass regions, just from the input SEM. This information is helpful to make better decisions in classifying some typical errors achieving higher accuracy. In the current paper, we improve the accuracy of the existing classifier by enhancing the underlying deep learning model and supplementing it with the recognition of chrome and glass (exposed and unexposed) regions further. We make it possible with yet another DL-based SEM2CAD digital twin to automatically identify exposed/unexposed areas from the SEM and augment manual input by the expert to it. We feed this new information into the SEM classifier that currently takes a reference and error SEM image for more accurate results. In addition, we also built an SEM-based defect classification system for the die-to-database inspection to categorize various types of VSB mask writer defects, which requires defect SEM images and the reference CAD. Using several deep neural network models and digital twins, in this paper, we provide a production-grade system for the VSB writer’s SEM-based defect classification that works for both die-to-die and die-to-database inspection methods.","PeriodicalId":412383,"journal":{"name":"Photomask Technology 2021","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-09-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133207096","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"A customized multifunctional actinic tool for EUV industry","authors":"B. Kim","doi":"10.1117/12.2602005","DOIUrl":"https://doi.org/10.1117/12.2602005","url":null,"abstract":"As mass production of advanced semiconductors using EUV lithography has begun, there was a high demand for various EUV actinic tools by mask shops, blank makers, and material suppliers. For example, EUV microscope would need for EUV mask defect review, EUV phase measurement tool would need for EUV PSM, and EUV transmittance, reflectance measurement tool would require EUV pellicle. Moreover, EUV test exposure tool is also required to develop EUV resist materials and process equipment. These are currently being developed as stand-alone tools but it is not easy to introduce all the individual tools due to the high cost of ownership, large fab space and low utilization at the beginning stage. In order to solve these difficulties of the industry, we have developed an equipment that can implement multiple solutions within the same system. Depending on the user's specific purpose, the various functions can be freely combined in a LEGO style with cost effective way to maximize equipment utilization and reduce the fab space. In this paper, we will discuss how this concept is realized for EUV mask and EUV material industry.","PeriodicalId":412383,"journal":{"name":"Photomask Technology 2021","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-09-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126001741","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Nivea G. Schuch, Alexandre Moly, Charles Valade, Nassim A. Halli, M. Abaidi, Jordan Belissard, F. Robert, T. Figueiro
{"title":"SEM image quality assessment for mask quality control","authors":"Nivea G. Schuch, Alexandre Moly, Charles Valade, Nassim A. Halli, M. Abaidi, Jordan Belissard, F. Robert, T. Figueiro","doi":"10.1117/12.2601081","DOIUrl":"https://doi.org/10.1117/12.2601081","url":null,"abstract":"","PeriodicalId":412383,"journal":{"name":"Photomask Technology 2021","volume":"475 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-09-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129613356","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}