Panel Discussion: Mask readiness for 3nm and beyond: a mask supplier’s perspective

B. Kasprowicz, E. Gallagher, Andrew Wall, L. Melvin, Masashi Sunako, T. Heil
{"title":"Panel Discussion: Mask readiness for 3nm and beyond: a mask supplier’s perspective","authors":"B. Kasprowicz, E. Gallagher, Andrew Wall, L. Melvin, Masashi Sunako, T. Heil","doi":"10.1117/12.2618132","DOIUrl":null,"url":null,"abstract":"As EUV is adopted by more companies, the insertion strategy and timing begin to drive new mask requirements. Traditional lithography extensions employed for DUV may now appear with EUV, from ILT to PSM to aggressive use of pellicles. Looking beyond was has been successful with EUV HVM and towards what we anticipate the requirements will be for the future, this panel will provide a suppliers perspective on where they believe the mask infrastructure stands to support low-k1 imaging for 33NA today and the initial path to support 55NA tomorrow.","PeriodicalId":412383,"journal":{"name":"Photomask Technology 2021","volume":"98 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Photomask Technology 2021","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.2618132","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract

As EUV is adopted by more companies, the insertion strategy and timing begin to drive new mask requirements. Traditional lithography extensions employed for DUV may now appear with EUV, from ILT to PSM to aggressive use of pellicles. Looking beyond was has been successful with EUV HVM and towards what we anticipate the requirements will be for the future, this panel will provide a suppliers perspective on where they believe the mask infrastructure stands to support low-k1 imaging for 33NA today and the initial path to support 55NA tomorrow.
小组讨论:3nm及以上的掩膜准备情况:掩膜供应商的观点
随着越来越多的公司采用EUV,插入策略和时机开始推动新的掩模需求。用于DUV的传统光刻扩展现在可能出现在EUV中,从ILT到PSM再到积极使用薄膜。展望我们在EUV HVM方面取得的成功,以及我们对未来需求的预期,该小组将向供应商提供他们认为掩膜基础设施支持当前33NA低k1成像的位置,以及未来支持55NA的初始路径。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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