B. Kasprowicz, E. Gallagher, Andrew Wall, L. Melvin, Masashi Sunako, T. Heil
{"title":"小组讨论:3nm及以上的掩膜准备情况:掩膜供应商的观点","authors":"B. Kasprowicz, E. Gallagher, Andrew Wall, L. Melvin, Masashi Sunako, T. Heil","doi":"10.1117/12.2618132","DOIUrl":null,"url":null,"abstract":"As EUV is adopted by more companies, the insertion strategy and timing begin to drive new mask requirements. Traditional lithography extensions employed for DUV may now appear with EUV, from ILT to PSM to aggressive use of pellicles. Looking beyond was has been successful with EUV HVM and towards what we anticipate the requirements will be for the future, this panel will provide a suppliers perspective on where they believe the mask infrastructure stands to support low-k1 imaging for 33NA today and the initial path to support 55NA tomorrow.","PeriodicalId":412383,"journal":{"name":"Photomask Technology 2021","volume":"98 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Panel Discussion: Mask readiness for 3nm and beyond: a mask supplier’s perspective\",\"authors\":\"B. Kasprowicz, E. Gallagher, Andrew Wall, L. Melvin, Masashi Sunako, T. Heil\",\"doi\":\"10.1117/12.2618132\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"As EUV is adopted by more companies, the insertion strategy and timing begin to drive new mask requirements. Traditional lithography extensions employed for DUV may now appear with EUV, from ILT to PSM to aggressive use of pellicles. Looking beyond was has been successful with EUV HVM and towards what we anticipate the requirements will be for the future, this panel will provide a suppliers perspective on where they believe the mask infrastructure stands to support low-k1 imaging for 33NA today and the initial path to support 55NA tomorrow.\",\"PeriodicalId\":412383,\"journal\":{\"name\":\"Photomask Technology 2021\",\"volume\":\"98 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Photomask Technology 2021\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1117/12.2618132\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Photomask Technology 2021","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.2618132","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Panel Discussion: Mask readiness for 3nm and beyond: a mask supplier’s perspective
As EUV is adopted by more companies, the insertion strategy and timing begin to drive new mask requirements. Traditional lithography extensions employed for DUV may now appear with EUV, from ILT to PSM to aggressive use of pellicles. Looking beyond was has been successful with EUV HVM and towards what we anticipate the requirements will be for the future, this panel will provide a suppliers perspective on where they believe the mask infrastructure stands to support low-k1 imaging for 33NA today and the initial path to support 55NA tomorrow.
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