发布求助
文献互助 智能选刊 最新文献

Teatro e Storia最新文献

筛选
英文 中文
Silicon carbide (SiC): a short history. an analytical approach for SiC power device design 碳化硅(SiC):历史较短。SiC功率器件设计的一种分析方法
IF 0.1
Teatro e Storia Pub Date : 2005-12-19 DOI: 10.1109/SMICND.2005.1558796
G. Brezeanu
{"title":"Silicon carbide (SiC): a short history. an analytical approach for SiC power device design","authors":"G. Brezeanu","doi":"10.1109/SMICND.2005.1558796","DOIUrl":"https://doi.org/10.1109/SMICND.2005.1558796","url":null,"abstract":"As this year we celebrate a century since the discovery of Silicon Carbide, a short history of semiconductor material is presented in the first part of the paper. Design guidelines, based on simple analytical expressions, for ideal structures of high power SiC Schottky barrier diodes (SBD), are also included","PeriodicalId":40779,"journal":{"name":"Teatro e Storia","volume":"2013 1","pages":"345-348 vol. 2"},"PeriodicalIF":0.1,"publicationDate":"2005-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86485387","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 14
Standard input CMOS gain stages noise analysis 标准输入CMOS增益级噪声分析
IF 0.1
Teatro e Storia Pub Date : 2005-12-19 DOI: 10.1109/SMICND.2005.1558804
A. Danchiv, M. Bodea, C. Dan
{"title":"Standard input CMOS gain stages noise analysis","authors":"A. Danchiv, M. Bodea, C. Dan","doi":"10.1109/SMICND.2005.1558804","DOIUrl":"https://doi.org/10.1109/SMICND.2005.1558804","url":null,"abstract":"Tins paper presents the systematic first order manual noise analysis for the CMOS active loud standard and folded cascade differential stages and a standard OTA stage. The basic equations for noise performance analysis are developed and the results are checked by SPICE simulation. A standard 0.6 mum CMOS processes is used","PeriodicalId":40779,"journal":{"name":"Teatro e Storia","volume":"1 1","pages":"375-378 vol. 2"},"PeriodicalIF":0.1,"publicationDate":"2005-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76029383","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The noise-equivalent magnetic induction spectral density of magnetotransistors 磁晶体管的噪声等效磁感应谱密度
IF 0.1
Teatro e Storia Pub Date : 2005-12-19 DOI: 10.1109/SMICND.2005.1558824
G. Caruntu, M. Drãgulinescu
{"title":"The noise-equivalent magnetic induction spectral density of magnetotransistors","authors":"G. Caruntu, M. Drãgulinescu","doi":"10.1109/SMICND.2005.1558824","DOIUrl":"https://doi.org/10.1109/SMICND.2005.1558824","url":null,"abstract":"In this paperwork, based on the model of dual Hall devices, it is analysed the operating conditions, and are established the noise main characteristics for magnetotransistor structures realised in the bipolar and MOS circuits technology. By using the numerical simulation, the values of the noise-equivalent magnetic induction spectral density for different structure devices are compared and it is also emphasized the way in which choosing the geometry and material properties influence on the device performances. There are also presented and described the electrical diagrams of the transducers which contain such sensors","PeriodicalId":40779,"journal":{"name":"Teatro e Storia","volume":"27 1","pages":"451-454 vol. 2"},"PeriodicalIF":0.1,"publicationDate":"2005-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74738494","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Growth of titanium oxide nanorods 氧化钛纳米棒的生长
IF 0.1
Teatro e Storia Pub Date : 2005-12-19 DOI: 10.1109/SMICND.2005.1558707
R. Plugaru, A. Cremades, J. Piqueras
{"title":"Growth of titanium oxide nanorods","authors":"R. Plugaru, A. Cremades, J. Piqueras","doi":"10.1109/SMICND.2005.1558707","DOIUrl":"https://doi.org/10.1109/SMICND.2005.1558707","url":null,"abstract":"Nanorods of titanium oxide (TiO/sub 2/) were obtained by thermally activated growth process carried out on pellets of nanocrystalline powder with mixed anatase and rutile structures. The nanostructured array consists of nanorods with length between 300 nm and I /spl mu/m and hexagonal cross section of 100-200 nm diameter. Herein it is shown that one can obtain information on the nanostructure growth from cathodoluminescence emission spectra. The growth process of the rods is mainly associated with the presence of the anatase phase. The key role of characteristic defects in semiconductor oxides, namely oxygen vacancies and Ti/sup n+/ ions is discussed.","PeriodicalId":40779,"journal":{"name":"Teatro e Storia","volume":"30 1","pages":"51-54 vol. 1"},"PeriodicalIF":0.1,"publicationDate":"2005-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80588057","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Quantum confinement in the photoluminescence of nanocrystalline porous silicon 纳米晶多孔硅光致发光中的量子约束
IF 0.1
Teatro e Storia Pub Date : 2005-12-19 DOI: 10.1109/SMICND.2005.1558708
I. Stavarache, M. Ciurea, V. Iancu
{"title":"Quantum confinement in the photoluminescence of nanocrystalline porous silicon","authors":"I. Stavarache, M. Ciurea, V. Iancu","doi":"10.1109/SMICND.2005.1558708","DOIUrl":"https://doi.org/10.1109/SMICND.2005.1558708","url":null,"abstract":"The paper presents the photoluminescence of nanocrystalline porous silicon. Two maxima were observed for rather fresh samples, one located at the infrared edge of the visible range and the other one in red. After ageing, the first maximum vanishes, suggesting its relation with the surface states, while the red one undergoes a significant blue shift. A simple quantum confinement model allows to correlate the photon energy of the red maximum with a transition between two confinement levels and to interpret the blue shift in terms of size reduction by oxidation. These results are in good agreement with previous microstructure measurements.","PeriodicalId":40779,"journal":{"name":"Teatro e Storia","volume":"60 1","pages":"55-58 vol. 1"},"PeriodicalIF":0.1,"publicationDate":"2005-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90849426","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Modified aromatic polyimides with potential piezoelectric properties 具有潜在压电性能的改性芳族聚酰亚胺
IF 0.1
Teatro e Storia Pub Date : 2005-12-19 DOI: 10.1109/SMICND.2005.1558785
E. Hamciuc, M. Brumǎ, C. Hamciuc, R. Lungu
{"title":"Modified aromatic polyimides with potential piezoelectric properties","authors":"E. Hamciuc, M. Brumǎ, C. Hamciuc, R. Lungu","doi":"10.1109/SMICND.2005.1558785","DOIUrl":"https://doi.org/10.1109/SMICND.2005.1558785","url":null,"abstract":"Aromatic polyimides containing nitrile polar functional groups with potential piezoelectric properties have been synthesized by solution polycondensation of aromatic diamines having nitrile group with various aromatic dianhydrides. The polymers were easily soluble in polar aprotic solvents such as N-methylpirrolidone, N,N-dimethylformamide and N,N-dimethylacetamide. Thin transparent films having a thickness of tens of micrometers have been prepared from N-methylpyrrolidinone solutions by casting onto glass substrates. The polymers showed high thermal stability with decomposition temperature being above 430 degC and glass transition temperature in the range of 200-280 degC, with a large interval between glass transition and decomposition temperature","PeriodicalId":40779,"journal":{"name":"Teatro e Storia","volume":"43 1","pages":"305-308 vol. 2"},"PeriodicalIF":0.1,"publicationDate":"2005-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90492680","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Design of vertically coupled microring resonators 垂直耦合微环谐振器的设计
IF 0.1
Teatro e Storia Pub Date : 2005-12-19 DOI: 10.1109/SMICND.2005.1558734
M. Kusko, C. Kusko, D. Cristea
{"title":"Design of vertically coupled microring resonators","authors":"M. Kusko, C. Kusko, D. Cristea","doi":"10.1109/SMICND.2005.1558734","DOIUrl":"https://doi.org/10.1109/SMICND.2005.1558734","url":null,"abstract":"In this work we have analyzed from theoretical point of view a new proposed microring resonator structure based on the wafer bonding technique. We focused our attention on obtaining the single-mode operation of the microring resonator. We have found that this requirement can be established by imposing a lateral offset between ring and bus waveguide.","PeriodicalId":40779,"journal":{"name":"Teatro e Storia","volume":"77 1","pages":"153-156 vol. 1"},"PeriodicalIF":0.1,"publicationDate":"2005-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89413784","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A study of the thermal oxidation of TaSi/sub 2/ and Ta/sub 2/Si silicides to form dielectric layers for MIS structures on 4H-SiC TaSi/ sub2 /和Ta/ sub2 /Si硅化物在4H-SiC上形成MIS结构介质层的热氧化研究
IF 0.1
Teatro e Storia Pub Date : 2005-12-19 DOI: 10.1109/SMICND.2005.1558798
A. Pérez‐Tomás, P. Godignon, N. Mestres, J. Montserrat, J. Millán
{"title":"A study of the thermal oxidation of TaSi/sub 2/ and Ta/sub 2/Si silicides to form dielectric layers for MIS structures on 4H-SiC","authors":"A. Pérez‐Tomás, P. Godignon, N. Mestres, J. Montserrat, J. Millán","doi":"10.1109/SMICND.2005.1558798","DOIUrl":"https://doi.org/10.1109/SMICND.2005.1558798","url":null,"abstract":"Some physical and electrical characteristics of the insulator layers produced by the deposition of the Ta2Si and TaSi2 tantalum silicides on 4H-SiC substrates and subsequent oxidation are compared in this paper. The thermal oxidation of both silicides on silicon carbide substrates, produces insulator layers with relatively good interfacial properties. The lower interface traps density and oxide charge and especially, the higher dielectric constant, make the product of the Ta2Si oxidation more suitable than the one from TaSi 2 for gate applications. However, the oxidized TaSi2 layers present improved dielectric strength with reduced leakage current","PeriodicalId":40779,"journal":{"name":"Teatro e Storia","volume":"33 1","pages":"353-356 vol. 2"},"PeriodicalIF":0.1,"publicationDate":"2005-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85930830","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Investigation of thermally activated charging effects in RF-MEMS switches RF-MEMS开关热激活充电效应的研究
IF 0.1
Teatro e Storia Pub Date : 2005-12-19 DOI: 10.1109/SMICND.2005.1558740
M. Exarchos, V. Theonas, G. Papaioannou, G. Constantinidis, S. Psychias, D. Vasilache, M. Dragoman, A. Muller, D. Neculoiu
{"title":"Investigation of thermally activated charging effects in RF-MEMS switches","authors":"M. Exarchos, V. Theonas, G. Papaioannou, G. Constantinidis, S. Psychias, D. Vasilache, M. Dragoman, A. Muller, D. Neculoiu","doi":"10.1109/SMICND.2005.1558740","DOIUrl":"https://doi.org/10.1109/SMICND.2005.1558740","url":null,"abstract":"The paper presents the investigation of the temperature dependence of the charging mechanism in RF-MEMS switch insulating layer. The accumulated charge kinetics has been monitored through the transient response of the device capacitance. The transient response is shown to follow rather a stretched exponential law than an exponential one. The time scale of the process is found to be thermally activated, with an activation energy that is determined from Arrhenius plot. This allows the determination of the time constant of the contributing mechanism at room temperature.","PeriodicalId":40779,"journal":{"name":"Teatro e Storia","volume":"7 1","pages":"175-178 vol. 1"},"PeriodicalIF":0.1,"publicationDate":"2005-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84335186","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Current-mode Euclidean distance circuit independent on technological parameters 不依赖于工艺参数的电流型欧氏距离电路
IF 0.1
Teatro e Storia Pub Date : 2005-12-19 DOI: 10.1080/00207217.2011.601439
C. Popa
{"title":"Current-mode Euclidean distance circuit independent on technological parameters","authors":"C. Popa","doi":"10.1080/00207217.2011.601439","DOIUrl":"https://doi.org/10.1080/00207217.2011.601439","url":null,"abstract":"A new n inputs current-mode Euclidean distance circuit will be presented. For improving the-circuit frequency response, only MOS transistors working in saturation will be used and a current-mode operation of the circuit will be imposed. The circuit output current, which represents the Euclidean distance function, is not dependent on technological parameters, with the result of an important reducing of the circuit errors. The Euclidean distance circuit is designed to be implemented in 0.35mum CMOS technology for n=16 inputs on a die area of about 45mumtimes60mum","PeriodicalId":40779,"journal":{"name":"Teatro e Storia","volume":"41 1","pages":"459-462 vol. 2"},"PeriodicalIF":0.1,"publicationDate":"2005-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84579075","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 12
首页 上一页 下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：481959085
Book学术官方微信