{"title":"Rapid Solidification: Fundamentals and Modeling","authors":"Guo-xiang Wang, V. Prasad","doi":"10.1615/ANNUALREVHEATTRANSFER.V11.60","DOIUrl":"https://doi.org/10.1615/ANNUALREVHEATTRANSFER.V11.60","url":null,"abstract":"","PeriodicalId":402656,"journal":{"name":"Annual Review of Heat Transfer","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129991768","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Youn-Woo Lee, Richard N. Smith, M. Glicksman, M. Koss
{"title":"EFFECTS OF BUOYANCY ON THE GROWTH OF DENDRITIC CRYSTALS","authors":"Youn-Woo Lee, Richard N. Smith, M. Glicksman, M. Koss","doi":"10.1615/ANNUALREVHEATTRANSFER.V7.40","DOIUrl":"https://doi.org/10.1615/ANNUALREVHEATTRANSFER.V7.40","url":null,"abstract":"","PeriodicalId":402656,"journal":{"name":"Annual Review of Heat Transfer","volume":"216 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124264190","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"CHEMICAL POTENTIAL OF PHOTONS AND ITS IMPLICATIONS FOR CONTROLLING RADIATIVE HEAT TRANSFER","authors":"B. Zhao, S. Fan","doi":"10.1615/annualrevheattransfer.2020032934","DOIUrl":"https://doi.org/10.1615/annualrevheattransfer.2020032934","url":null,"abstract":"In conventional photon-based heat transfer, one typically assumes that the chemical potential of photons is zero. On the other hand, when a semiconductor is under external biases, the photons with energy above the semiconductor bandgap can exhibit a nonzero chemical potential that is proportional to the applied voltage. The presence of such nonzero chemical potential points to the abilities to drastically enhance the power density of photon-based heat flow, to electronically control photon-based heat transfer, and to construct photon-based heat engines for energy harvesting and solid-state cooling. In this review, we discuss basic concepts and applications of chemical potential of photons in controlling radiative heat transfer.","PeriodicalId":402656,"journal":{"name":"Annual Review of Heat Transfer","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126158309","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"SPECTRAL-BEAM-SPLITTING PHOTOVOLTAIC/THERMAL HYBRID TECHNOLOGIES","authors":"Nicholas J. Y. Liew, Hyun-Jin Lee","doi":"10.1615/annualrevheattransfer.2022045120","DOIUrl":"https://doi.org/10.1615/annualrevheattransfer.2022045120","url":null,"abstract":"","PeriodicalId":402656,"journal":{"name":"Annual Review of Heat Transfer","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129760852","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A. Dasgupta, D. K. Chandraker, Rakesh Kumar, A. Nayak
{"title":"MECHANISTIC MODELING OF DRYOUT","authors":"A. Dasgupta, D. K. Chandraker, Rakesh Kumar, A. Nayak","doi":"10.1615/annualrevheattransfer.2020033346","DOIUrl":"https://doi.org/10.1615/annualrevheattransfer.2020033346","url":null,"abstract":"","PeriodicalId":402656,"journal":{"name":"Annual Review of Heat Transfer","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128574440","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"THE ALTERNATING GROUP EXPLICIT (AGE) ITERATIVE METHOD TO SOLVE PARABOLIC AND HYPERBOLIC PARTIAL DIFFERENTIAL EQUATIONS","authors":"M. Sahimi, D. J. Evans","doi":"10.1615/ANNUALREVHEATTRANSFER.V2.100","DOIUrl":"https://doi.org/10.1615/ANNUALREVHEATTRANSFER.V2.100","url":null,"abstract":"","PeriodicalId":402656,"journal":{"name":"Annual Review of Heat Transfer","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129805326","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"CHANG-LIN TIEN'S CONTRIBUTIONS IN ENERGY SYSTEMS","authors":"P. Phelan","doi":"10.1615/ANNUALREVHEATTRANSFER.V14.260","DOIUrl":"https://doi.org/10.1615/ANNUALREVHEATTRANSFER.V14.260","url":null,"abstract":"","PeriodicalId":402656,"journal":{"name":"Annual Review of Heat Transfer","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127273019","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"NEAR-JUNCTION THERMAL MANAGEMENT: THERMAL CONDUCTION IN GALLIUM NITRIDE COMPOSITE SUBSTRATES","authors":"Jungwan Cho, Zijian Li, M. Asheghi, K. Goodson","doi":"10.1615/ANNUALREVHEATTRANSFER.2015011335","DOIUrl":"https://doi.org/10.1615/ANNUALREVHEATTRANSFER.2015011335","url":null,"abstract":"The thermal management challenge posed by gallium nitride (GaN) high-electron-mobility transistor (HEMT) technology has received much attention in the past decade. The peak amplification power density of these devices is limited by heat transfer at the device, substrate, package, and system levels. Thermal resistances within micrometers of the transistor junction can limit efficient heat spreading from active device regions into the substrate and can dominate the overall temperature rise. Gallium nitride composite substrates, which consist of AlGaN/GaN heterostructures with thickness of a few microns on a thicker non-GaN substrate, govern the thermal resistance associated with the “near-junction” region. Silicon and silicon carbide have been widely used as a substrate material, but the performance of GaN devices grown on these substrates is still severely limited by thermal constraints and associated reliability issues. The importance of effective junction-level heat conduction has motivated the development of composite substrates containing high-thermal-conductivity diamond, but these composites require careful attention to thermal resistances between the GaN and the diamond. This chapter reviews thermal conduction phenomena in GaN composite substrates containing Si, SiC, and diamond. The review discusses the governing conduction physics and overviews the relevant measurement techniques. The best available experimental data for GaN composite substrates as well as the relevant thermal modeling are presented. The review concludes with an assessment of the potential benefits of the use of diamond on the device thermal performance.","PeriodicalId":402656,"journal":{"name":"Annual Review of Heat Transfer","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130590040","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
