Proceedings of the 2015 Third International Conference on Computer, Communication, Control and Information Technology (C3IT)最新文献_第3页

An innovative approach towards detection and exclusion of overlapped regions in guard zone computation 警卫区计算中重叠区域检测与排除的一种创新方法

Proceedings of the 2015 Third International Conference on Computer, Communication, Control and Information Technology (C3IT) Pub Date : 2015-03-16 DOI: 10.1109/C3IT.2015.7060156

Ranjan Mehera, Arpan Chakraborty, Piyali Datta, R. Pal

{"title":"An innovative approach towards detection and exclusion of overlapped regions in guard zone computation","authors":"Ranjan Mehera, Arpan Chakraborty, Piyali Datta, R. Pal","doi":"10.1109/C3IT.2015.7060156","DOIUrl":"https://doi.org/10.1109/C3IT.2015.7060156","url":null,"abstract":"The guard zone computation problem is of utmost importance in the domain of VLSI physical design automation as one of the major purposes is to find an optimized way to place a set of two-dimensional blocks on a chip floor. Beyond this, it has huge significance in the field of robotic motion planning, Geographical information system, automatic monitoring of metal cutting tools and design of any embedded systems. In VLSI layout design, the circuit components (or the functional units / modules or groups / blocks of different sub-circuits) that may be viewed as a set of polygonal regions on a two-dimensional plane, are not supposed to be placed much closer to each other in order to avoid electrical (parasitic) effects among them. Each (group of) circuit component(s) Ci is associated with a parameter δi such that a minimum clearance zone of width δi is to be maintained around Ci. If the guard zonal regions overlap, we have to remove the overlapped regions in order to compute the resultant outer guard zone (sometimes inner guard zones are also an issue to be considered). The location of guard zone (of specified width) for a simple polygon is a very important problem for resizing a (group of) circuit component. In this paper, we have developed an algorithm to compute the guard zone of a simple polygon as well as to exclude the overlapped regions among the guard zonal segments (if any) in O(nlogn) time, where n is the number of vertices of the given simple polygon.","PeriodicalId":402311,"journal":{"name":"Proceedings of the 2015 Third International Conference on Computer, Communication, Control and Information Technology (C3IT)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-03-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121396627","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Thin domain wide electrode (TDWE) phantoms for Electrical Impedance Tomography (EIT) 电阻抗层析成像(EIT)的薄畴宽电极(TDWE)图

Proceedings of the 2015 Third International Conference on Computer, Communication, Control and Information Technology (C3IT) Pub Date : 2015-03-16 DOI: 10.1109/C3IT.2015.7060223

T. Bera, Atanu Chowdhury, Hiranmoy Mandai, Kalyan Kar, Animesh Haider, J. Nagaraju

{"title":"Thin domain wide electrode (TDWE) phantoms for Electrical Impedance Tomography (EIT)","authors":"T. Bera, Atanu Chowdhury, Hiranmoy Mandai, Kalyan Kar, Animesh Haider, J. Nagaraju","doi":"10.1109/C3IT.2015.7060223","DOIUrl":"https://doi.org/10.1109/C3IT.2015.7060223","url":null,"abstract":"Electrical Impedance Tomography (EIT) is a nonlinear ill posed inverse problem which is very prone to modeling errors. 2D-EIT reconstructs the spatial distribution of the object impedance profile comparing the measurements of boundary voltage data collected from a 3D object with the calculated data generated from an absolute 2D domain in computer. As the 2D-EIT assumes current conduction in two dimensional plane of EIT electrode array, the 2D EIT systems working with a practical 3D phantom produce some error and hence the forward modeling should be modified accordingly. On the other hand, the 3D error can be reduced by using long electrodes but in long electrode system, the electrode to electrode gap (EEGR) ratio required to be maintained to attain a good sensitivity is found difficult. In this direction the thin domain wide electrode (TDWE) phantoms are proposed for electrical impedance tomography (EIT) to reduce the 3D error by maintaining the required EEGR. A LabVIEW based multifrequency EIT instrumentation has been developed and a number of TDWE phantoms with different inhomogeneity configurations have been studied. Absolute impedance images reconstructed in EIDORS, demonstrate that developed TDWE phantom improves image quality by reducing the 3D error.","PeriodicalId":402311,"journal":{"name":"Proceedings of the 2015 Third International Conference on Computer, Communication, Control and Information Technology (C3IT)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-03-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125411023","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 4

A novel sensitivity enhancement technique employing wheatstone's bridge for strain and temperature measurement 一种利用惠斯通电桥进行应变和温度测量的新型灵敏度增强技术

Proceedings of the 2015 Third International Conference on Computer, Communication, Control and Information Technology (C3IT) Pub Date : 2015-03-16 DOI: 10.1109/C3IT.2015.7060116

Shreem Ghosh, Aninda Mukherjee, Kunal Sahoo, S. Sen, A. Sarkar

引用次数: 12

Developing software product and test automation software using Agile methodology 使用敏捷方法开发软件产品和测试自动化软件

Proceedings of the 2015 Third International Conference on Computer, Communication, Control and Information Technology (C3IT) Pub Date : 2015-03-16 DOI: 10.1109/C3IT.2015.7060120

A. Sultania

引用次数: 9

Event extraction from biomedical text using CRF and genetic algorithm 基于CRF和遗传算法的生物医学文本事件提取

Proceedings of the 2015 Third International Conference on Computer, Communication, Control and Information Technology (C3IT) Pub Date : 2015-03-16 DOI: 10.1109/C3IT.2015.7060131

A. Majumder, Asif Ekbal

引用次数: 4

Spectrum sharing networks with imperfect channel state information 信道状态信息不完全的频谱共享网络

Proceedings of the 2015 Third International Conference on Computer, Communication, Control and Information Technology (C3IT) Pub Date : 2015-03-16 DOI: 10.1109/C3IT.2015.7060108

S. Kundu, Binod Prasad, Sanjay Dhar Roy

引用次数: 3

Design optimization and large-signal simulation of DLHL Si IMPATT diode at 60 GHz 60 GHz DLHL Si IMPATT二极管的设计优化与大信号仿真

Proceedings of the 2015 Third International Conference on Computer, Communication, Control and Information Technology (C3IT) Pub Date : 2015-03-16 DOI: 10.1109/C3IT.2015.7060140

Suranjana Banerjee, A. Acharyya, M. Mitra

{"title":"Design optimization and large-signal simulation of DLHL Si IMPATT diode at 60 GHz","authors":"Suranjana Banerjee, A. Acharyya, M. Mitra","doi":"10.1109/C3IT.2015.7060140","DOIUrl":"https://doi.org/10.1109/C3IT.2015.7060140","url":null,"abstract":"A four-level optimization technique has been used to design a double low-high-low (DLHL) impact avalanche transit time (IMPATT) diode based on Si for 60 GHz operation. Initially the position of the charge bumps in both n- and p-epitaxial layers followed by the widths of those and the ratio of high to low doping concentrations have been varied subject to obtain the maximum large-signal DC to RF conversation efficiency from the device. Finally the bias current density is varied within a specified range to obtain the optimum value of it for which the DC to RF conversation efficiency of the device is maximum. The above mentioned four optimization steps have been repeated until the method converges to provide a stable optimized DC to RF conversion efficiency. A large-signal simulation technique based on non-sinusoidal voltage excitation (NSVE) model developed by the authors is used for this purpose. The large-signal properties of the optimized DLHL Si IMPATT have been simulated and those are compared with the experimental results reported earlier. The said comparison shows that the optimized DLHL diode is capable of delivering significantly higher RF power output with greater DC to RF conversion efficiency at 60 GHz as compared to its un-optimized counterpart.","PeriodicalId":402311,"journal":{"name":"Proceedings of the 2015 Third International Conference on Computer, Communication, Control and Information Technology (C3IT)","volume":"565 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-03-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116450371","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

An improved technique of capacitance measurement of solar cells 太阳能电池电容测量技术的改进

Proceedings of the 2015 Third International Conference on Computer, Communication, Control and Information Technology (C3IT) Pub Date : 2015-03-16 DOI: 10.1109/C3IT.2015.7060204

Hiranmoy Mandal, Sirshendu Saha

引用次数: 4

Mitigation of power quality problems using unified power quality conditioner (UPQC) 统一电能质量调节器(UPQC)缓解电能质量问题

Proceedings of the 2015 Third International Conference on Computer, Communication, Control and Information Technology (C3IT) Pub Date : 2015-03-16 DOI: 10.1109/C3IT.2015.7060174

Mihir Hembram, Ayan Kumar Tudu

引用次数: 13

Impact of GaN buffer layer thickness on structural and optical properties of AlGaN/GaN based high electron mobility transistor structure grown on Si(111) substrate by plasma assisted molecular beam epitaxy technique GaN缓冲层厚度对等离子体辅助分子束外延技术在Si(111)衬底上生长的AlGaN/GaN基高电子迁移率晶体管结构和光学性能的影响

Proceedings of the 2015 Third International Conference on Computer, Communication, Control and Information Technology (C3IT) Pub Date : 2015-03-16 DOI: 10.1109/C3IT.2015.7060230

K. Ghosh, Sudipta Das, S. Ganguly, D. Saha, A. Laha

引用次数: 2