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2019 IEEE MTT-S International Microwave Conference on Hardware and Systems for 5G and Beyond (IMC-5G)最新文献

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5G mm-Wave SPDT Switch IMDn Investigation 5G毫米波SPDT交换机IMDn研究
2019 IEEE MTT-S International Microwave Conference on Hardware and Systems for 5G and Beyond (IMC-5G) Pub Date : 2019-08-01 DOI: 10.1109/IMC-5G47857.2019.9160367
Chaojiang Li, O. El-Aassar, Naga Satish, Arvind Kumar, N. Cahoon, Gabriel M. Rebeiz
{"title":"5G mm-Wave SPDT Switch IMDn Investigation","authors":"Chaojiang Li, O. El-Aassar, Naga Satish, Arvind Kumar, N. Cahoon, Gabriel M. Rebeiz","doi":"10.1109/IMC-5G47857.2019.9160367","DOIUrl":"https://doi.org/10.1109/IMC-5G47857.2019.9160367","url":null,"abstract":"In this paper, we will present the investigation of 5G mm-Wave SPDT maximum sustainable power, Pmax. Maximum sustainable power is a key parameter for switch design. In sub 6GHz switch applications, Pmax is normally defined as the input power that cause harmonics to abruptly increase. In mm-Wave SPDT design, we found that some SPDT Pmax defined based on harmonics is much higher than the Pmax defined by IMD3 abrupt change and even Pmax defined by ruggedness.","PeriodicalId":373158,"journal":{"name":"2019 IEEE MTT-S International Microwave Conference on Hardware and Systems for 5G and Beyond (IMC-5G)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116949735","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
High-Performance Optically Controlled RF Switches for Advanced Reconfigurable Millimeterwave-to-THz Circuits 用于高级可重构毫米波-太赫兹电路的高性能光控射频开关
2019 IEEE MTT-S International Microwave Conference on Hardware and Systems for 5G and Beyond (IMC-5G) Pub Date : 2019-08-01 DOI: 10.1109/IMC-5G47857.2019.9160365
Yu Shi, Jun Ren, Yijing Deng, P. Fay, Lei Liu
{"title":"High-Performance Optically Controlled RF Switches for Advanced Reconfigurable Millimeterwave-to-THz Circuits","authors":"Yu Shi, Jun Ren, Yijing Deng, P. Fay, Lei Liu","doi":"10.1109/IMC-5G47857.2019.9160365","DOIUrl":"https://doi.org/10.1109/IMC-5G47857.2019.9160365","url":null,"abstract":"In this paper, optically-controlled highperformance integrated RF switches have been proposed, investigated and discussed. The switching is based on the high conductivity change (5–6 orders) due to photo-induced free-carriers in semiconductors. Initial simulation for G-band CPW-based optical switches has shown that a record-high (compared to semiconductor and VO2 switches) intrinsic FOM (figure of merit evaluated by RonCoff constant) of 153 THz can be achieved using Ge (85 THz with Si). In addition, the on/off ratio can be maintained as high as 28.1 dB at 200 GHz. The proposed device has not only superior performance, but also the advantages of compact size, easy fabrication and integration, as well as high speed and reliability, making it a great candidate for enabling advanced tunable/reconfigurable circuits that are required in millimeter-wave and terahertz communications.","PeriodicalId":373158,"journal":{"name":"2019 IEEE MTT-S International Microwave Conference on Hardware and Systems for 5G and Beyond (IMC-5G)","volume":"308 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117344639","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A 27-29GHz Integer-N PLL with Quadrature phases for 5G applications 用于5G应用的27-29GHz正交相位整数n锁相环
2019 IEEE MTT-S International Microwave Conference on Hardware and Systems for 5G and Beyond (IMC-5G) Pub Date : 2019-08-01 DOI: 10.1109/IMC-5G47857.2019.9160374
V. Aggarwal, S. Aniruddhan
{"title":"A 27-29GHz Integer-N PLL with Quadrature phases for 5G applications","authors":"V. Aggarwal, S. Aniruddhan","doi":"10.1109/IMC-5G47857.2019.9160374","DOIUrl":"https://doi.org/10.1109/IMC-5G47857.2019.9160374","url":null,"abstract":"This paper presents a quadrature 27-29GHz mmwave Integer-N phase locked loop (PLL) with an input reference frequency of 25MHz in a bulk CMOS 45nm technology. The PLL utilizes a Cascode Injection based Quadrature Voltage Controlled Oscillator (VCO) with a low phase noise of -87dBc/Hz @1MHz offset, and a 1024–2046 modular divider in step of 2. The PLL achieves a normalized phase noise of -90dBc/Hz at an offset of 1MHz even at a very high divide ratio of 1120 while consuming power of 65mW from a 1.1V power supply in post layout EM simulations. The jitter-power figure of merit (FOM) is -231dBc/Hz which is at par with state of the art PLL designs for 5G applications.","PeriodicalId":373158,"journal":{"name":"2019 IEEE MTT-S International Microwave Conference on Hardware and Systems for 5G and Beyond (IMC-5G)","volume":"97 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115172383","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Sub-Sampling PLL For Millimeter Wave Applications: An Overview 毫米波应用的分采样锁相环:概述
2019 IEEE MTT-S International Microwave Conference on Hardware and Systems for 5G and Beyond (IMC-5G) Pub Date : 2019-08-01 DOI: 10.1109/IMC-5G47857.2019.9160380
Xiang Gao
{"title":"Sub-Sampling PLL For Millimeter Wave Applications: An Overview","authors":"Xiang Gao","doi":"10.1109/IMC-5G47857.2019.9160380","DOIUrl":"https://doi.org/10.1109/IMC-5G47857.2019.9160380","url":null,"abstract":"The sub-sampling PLL utilizes a PD that subsamples the high frequency VCO output with the reference clock. The PD and CP noise in this PLL is greatly attenuated by the high phase detection gain due to the high VCO dv/dt slew rate. It is now a proven PLL architecture and widely used for achieving low phase noise or integrated jitter yet with low power consumption. This article reviews the development of the sub-sampling PLL techniques and their usage in the millimeter wave applications.","PeriodicalId":373158,"journal":{"name":"2019 IEEE MTT-S International Microwave Conference on Hardware and Systems for 5G and Beyond (IMC-5G)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133883332","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A 21 to 31 GHz Multi-Stage Stacked SOI Power Amplifier with 33% PAE and 18 dBm Output Power 一个21至31 GHz多级堆叠SOI功率放大器，PAE为33%，输出功率为18 dBm
2019 IEEE MTT-S International Microwave Conference on Hardware and Systems for 5G and Beyond (IMC-5G) Pub Date : 2019-08-01 DOI: 10.1109/IMC-5G47857.2019.9160355
Tiantong Ren, B. Floyd
{"title":"A 21 to 31 GHz Multi-Stage Stacked SOI Power Amplifier with 33% PAE and 18 dBm Output Power","authors":"Tiantong Ren, B. Floyd","doi":"10.1109/IMC-5G47857.2019.9160355","DOIUrl":"https://doi.org/10.1109/IMC-5G47857.2019.9160355","url":null,"abstract":"This paper presents a compact two-stage K/Ka-band power amplifier (PA) implemented i n GlobalFoundries 4SRFSOI CMOS technology for fifth-generation (5G) millimeterwave phased arrays. The PA features a linear pre-driver stage with 1.6 V supply and a three-stack FET output stage with 3.6 V supply. Measurement results show that at 26 GHz, the PA achieves a peak gain of 16.6 dB and a saturated output power (Psat) of 18.3 dBm with maximum power-added efficiency (PAE) of 32.8%. The 1-dB compression point (P1dB) is 16.2 dBm with PAE of 29.7%. The PA operates across 21 to 31 GHz with Psat above 17.3 dBm and gain above 13.6 dB.","PeriodicalId":373158,"journal":{"name":"2019 IEEE MTT-S International Microwave Conference on Hardware and Systems for 5G and Beyond (IMC-5G)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115355697","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Envelope Tracking for 5G Mobile Handsets 5G手机信封追踪技术
2019 IEEE MTT-S International Microwave Conference on Hardware and Systems for 5G and Beyond (IMC-5G) Pub Date : 2019-08-01 DOI: 10.1109/IMC-5G47857.2019.9160362
James Retz, Jean-Fred Chiron, N. Khlat
{"title":"Envelope Tracking for 5G Mobile Handsets","authors":"James Retz, Jean-Fred Chiron, N. Khlat","doi":"10.1109/IMC-5G47857.2019.9160362","DOIUrl":"https://doi.org/10.1109/IMC-5G47857.2019.9160362","url":null,"abstract":"The arrival of 5th Generation (5G) New Radio (NR) brings challenges to Envelope Tracking (ET) systems for mobile handsets. Most notably, 5G NR brings 100MHz modulation bandwidth and Dual Connectivity. A Qorvo ET module solves these needs for 5G mobile. This work summarizes ET 100MHz performance with memoryless Digital Predistortion (DPD) for Band n77 and Band n41. A Memory DPD (MDPD) model is also examined for Band n41.","PeriodicalId":373158,"journal":{"name":"2019 IEEE MTT-S International Microwave Conference on Hardware and Systems for 5G and Beyond (IMC-5G)","volume":"66 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115717805","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Wideband Front-End Integration and Unification of Circuit-Antenna for Simultaneous Stabilized Amplification and Steered Radiation 同时稳定放大和定向辐射的宽带前端集成与电路天线统一
2019 IEEE MTT-S International Microwave Conference on Hardware and Systems for 5G and Beyond (IMC-5G) Pub Date : 2019-08-01 DOI: 10.1109/IMC-5G47857.2019.9160373
Srinaga Nikhil Nallandhigal, K. Wu
{"title":"Wideband Front-End Integration and Unification of Circuit-Antenna for Simultaneous Stabilized Amplification and Steered Radiation","authors":"Srinaga Nikhil Nallandhigal, K. Wu","doi":"10.1109/IMC-5G47857.2019.9160373","DOIUrl":"https://doi.org/10.1109/IMC-5G47857.2019.9160373","url":null,"abstract":"A wideband front-end integration of amplifying transistor within array antenna is proposed, analyzed and demonstrated in this paper, for simultaneous stabilized amplification and beam steered radiation, in a unified space. Source degeneration inductance realized through via is studied, from which appropriate via is utilized for stabilization. In addition, E-shaped patch antenna is used as the input matching network to enhance the impedance matching bandwidth, which also radiates. The prototype model is fabricated, and the measured results agree very well with simulated counterparts. This unified prototype has the amplification gain varying form 10 dB to 8 dB across the matching bandwidth of 13.5 %, along with beam steered radiation at +35°, observed from experiments. Furthermore, frequency tuning and related radiation performance realized through varying DC bias from measurements are also presented.","PeriodicalId":373158,"journal":{"name":"2019 IEEE MTT-S International Microwave Conference on Hardware and Systems for 5G and Beyond (IMC-5G)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128735204","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Sub-THz and THz Signal Generation Using Photonic and Electronic Techniques (Invited Paper) 利用光子和电子技术产生亚太赫兹和太赫兹信号(特邀论文)
2019 IEEE MTT-S International Microwave Conference on Hardware and Systems for 5G and Beyond (IMC-5G) Pub Date : 2019-08-01 DOI: 10.1109/IMC-5G47857.2019.9160391
A. Banerjee, Lei Zhang, Hua Wang, P. Wambacq
{"title":"Sub-THz and THz Signal Generation Using Photonic and Electronic Techniques (Invited Paper)","authors":"A. Banerjee, Lei Zhang, Hua Wang, P. Wambacq","doi":"10.1109/IMC-5G47857.2019.9160391","DOIUrl":"https://doi.org/10.1109/IMC-5G47857.2019.9160391","url":null,"abstract":"To enable the use of the sub-THz and THz region of the electromagnetic spectrum from 100GHz to 10THz for next generation high-speed wireless communication and other emerging applications, it is important to generate the signal in this frequency range with high output power and high efficiency in a compact and cost-effective way. This paper reviews different photonic and electronic techniques for sub-THz and THz signal generation with implementation examples and discusses the future trends.","PeriodicalId":373158,"journal":{"name":"2019 IEEE MTT-S International Microwave Conference on Hardware and Systems for 5G and Beyond (IMC-5G)","volume":"42 10","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114036753","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
An Artificial-Intelligence (AI) Assisted Mm-Wave Doherty Power Amplifier with Rapid Mixed-Mode In-Field Performance Optimization 人工智能辅助毫米波Doherty功率放大器的快速混模场内性能优化
2019 IEEE MTT-S International Microwave Conference on Hardware and Systems for 5G and Beyond (IMC-5G) Pub Date : 2019-08-01 DOI: 10.1109/IMC-5G47857.2019.9160368
Fei Wang, Shaojie Xu, J. Romberg, Hua Wang
{"title":"An Artificial-Intelligence (AI) Assisted Mm-Wave Doherty Power Amplifier with Rapid Mixed-Mode In-Field Performance Optimization","authors":"Fei Wang, Shaojie Xu, J. Romberg, Hua Wang","doi":"10.1109/IMC-5G47857.2019.9160368","DOIUrl":"https://doi.org/10.1109/IMC-5G47857.2019.9160368","url":null,"abstract":"This paper presents an artificial-intelligence (AI) assisted “intelligent” millimeter-wave (mm-wave) Doherty power amplifier (PA) architecture that achieves robust adaptive operation over antenna VSWR. A built-in machine-learning core utilizes online function estimation and reinforcement learning algorithms for dynamic Doherty performance optimization. As a proof of concept, a 3-bit mixed-signal Doherty PA (MSDPA) at 28GHz is used as a hardware platform to demonstrate the performance improvement with the AI core. Over 2:1 antenna VSWR variation, simulations using extracted Doherty PA schematic show up-to 4.9 dBm P1dBimprovement and up-to 7% PAE improvement at P1dB.","PeriodicalId":373158,"journal":{"name":"2019 IEEE MTT-S International Microwave Conference on Hardware and Systems for 5G and Beyond (IMC-5G)","volume":"28 5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116944609","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
High-Efficiency Stacked Cell CMOS SOI Power Amplifiers for 5G Applications 5G应用的高效堆叠电池CMOS SOI功率放大器
2019 IEEE MTT-S International Microwave Conference on Hardware and Systems for 5G and Beyond (IMC-5G) Pub Date : 2019-08-01 DOI: 10.1109/IMC-5G47857.2019.9160352
S. Mohammadi, H. Shan, N. Conrad, S. Hathorn, J. Peterson
{"title":"High-Efficiency Stacked Cell CMOS SOI Power Amplifiers for 5G Applications","authors":"S. Mohammadi, H. Shan, N. Conrad, S. Hathorn, J. Peterson","doi":"10.1109/IMC-5G47857.2019.9160352","DOIUrl":"https://doi.org/10.1109/IMC-5G47857.2019.9160352","url":null,"abstract":"Design, implementation and characterization of high efficiency CMOS SOI power amplifiers (PAs) based on stacked cell approach and suitable for 5G standard are presented. PA designs based on stacked cells in general, and on stacked triple transistor cells in particular, can deliver both high output powers and high efficiencies from RF to mm-wave frequencies. The PAs designed in this work are implemented in Globalfoundries 45 nm CMOS Silicon on Insulator (SOI) technology. For 26 and 28GHz 5G bands, a PA operating in 24–28 GHz frequency range delivers measured maximum linear power gain of 15.2 dB (16 dB), saturated output power PSAT of 25.2 dBm (24.8 dBm), -1 dB output compression power P1dB of 22.5 dBm (17.3 dBm) and a peak power-added efficiency PAE of 20% (15%) at 26 GHz (28 GHz). A second PA, targeted at higher frequencies (42–54 GHz) and designed with two stacked triple transistor cells with combined cell layout to reduce parasitics, provides improvement in PAE but at lower output powers. The design can be easily adopted for 5G bands at 37,39 or 47 GHz.","PeriodicalId":373158,"journal":{"name":"2019 IEEE MTT-S International Microwave Conference on Hardware and Systems for 5G and Beyond (IMC-5G)","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121532150","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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