A 21 to 31 GHz Multi-Stage Stacked SOI Power Amplifier with 33% PAE and 18 dBm Output Power

Abstract

This paper presents a compact two-stage K/Ka-band power amplifier (PA) implemented i n GlobalFoundries 4SRFSOI CMOS technology for fifth-generation (5G) millimeterwave phased arrays. The PA features a linear pre-driver stage with 1.6 V supply and a three-stack FET output stage with 3.6 V supply. Measurement results show that at 26 GHz, the PA achieves a peak gain of 16.6 dB and a saturated output power (Psat) of 18.3 dBm with maximum power-added efficiency (PAE) of 32.8%. The 1-dB compression point (P1dB) is 16.2 dBm with PAE of 29.7%. The PA operates across 21 to 31 GHz with Psat above 17.3 dBm and gain above 13.6 dB.