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2023 46th International Spring Seminar on Electronics Technology (ISSE)最新文献

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Polymer Membrane for Characterisation of Gas Permeability and Encapsulation of a Black Phosphorous Sensor 用聚合物膜表征黑磷传感器的透气性和封装
2023 46th International Spring Seminar on Electronics Technology (ISSE) Pub Date : 2023-05-10 DOI: 10.1109/ISSE57496.2023.10168504
Victoria Constance Köst, Zahra Fekri, Jens Zscharchuch, K. Nieweglowski, Athur Erbe, K. Bock
{"title":"Polymer Membrane for Characterisation of Gas Permeability and Encapsulation of a Black Phosphorous Sensor","authors":"Victoria Constance Köst, Zahra Fekri, Jens Zscharchuch, K. Nieweglowski, Athur Erbe, K. Bock","doi":"10.1109/ISSE57496.2023.10168504","DOIUrl":"https://doi.org/10.1109/ISSE57496.2023.10168504","url":null,"abstract":"Sensitive gas sensors are widely used in industrial and consumer applications for gas analysis. Here, a critical point is the encapsulation of the sensitive sensor material to protect it from degradation. In this paper, polyvinylidene fluoride (PVDF) is discussed as a membrane material. The polymer is characterised in terms of its permeation properties towards carbon dioxide. For the gas permeation measurement, a self-developed experimental setup was adapted and tested to the single membrane measurement.","PeriodicalId":373085,"journal":{"name":"2023 46th International Spring Seminar on Electronics Technology (ISSE)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-05-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134184360","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Influence of No-Clean Flux on the Corrosivity of Various Surface Finishes After Reflow 未清洁助焊剂对回流后各种表面光洁度腐蚀性的影响
2023 46th International Spring Seminar on Electronics Technology (ISSE) Pub Date : 2023-05-10 DOI: 10.1109/ISSE57496.2023.10168358
K. Sorokina, K. Dušek, D. Bušek
{"title":"Influence of No-Clean Flux on the Corrosivity of Various Surface Finishes After Reflow","authors":"K. Sorokina, K. Dušek, D. Bušek","doi":"10.1109/ISSE57496.2023.10168358","DOIUrl":"https://doi.org/10.1109/ISSE57496.2023.10168358","url":null,"abstract":"High-quality soldered joint is necessary for the trouble-free operation of electronic equipment. The quality of the soldered joint is determined by several parameters. One of the parameters is the type of used flux. There are no-clean fluxes and fluxes that must be cleaned after the soldering process. Today, no-clean fluxes are widely used. This work is a continuation of the study [1] and it is focused on studying the effect of flux aggressiveness on commonly used PCB surfaces such as electroless nickel immersion gold (ENIG), immersion tin, and organic solderability preservative (OSP). Five fluxes with different classifications were investigated in the work: Weller Lötwasser, Topnik RF800, Topnik TE - 400, Topnik ESW 32, and Topnik LP-1. The most aggressive influence showed no-clean fluxes Topnik TE-410 and Topnik LP-1. These fluxes corroded the OSP surface by at least 0.5 $mu$m. The results also showed the most resistant type of surface finish was ENIG and the most susceptible to no-clean flux aggressiveness was OSP.","PeriodicalId":373085,"journal":{"name":"2023 46th International Spring Seminar on Electronics Technology (ISSE)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-05-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121457860","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Investigation of the Influence of Dam and Fill Encapsulating Material Shrinkage on a Semiconductor Substrate Warpage 坝填料封装材料收缩对半导体衬底翘曲影响的研究
2023 46th International Spring Seminar on Electronics Technology (ISSE) Pub Date : 2023-05-10 DOI: 10.1109/ISSE57496.2023.10168456
A. Otáhal, I. Gablech, J. Skácel, I. Szendiuch
{"title":"Investigation of the Influence of Dam and Fill Encapsulating Material Shrinkage on a Semiconductor Substrate Warpage","authors":"A. Otáhal, I. Gablech, J. Skácel, I. Szendiuch","doi":"10.1109/ISSE57496.2023.10168456","DOIUrl":"https://doi.org/10.1109/ISSE57496.2023.10168456","url":null,"abstract":"This paper deals with the investigation of encapsulation material after curing shrinkage influence on a semiconductor die warpage. Dam and Fill method for encapsulation was used in this work. The bending deformation phenomenon is caused by stress due to the shrinkage of the encapsulation material. This stress is determined by the deformation of a square-shaped semiconductor board (20x20) mm from the point of view of the Z axis. After the last step of the samples preparation, 5 samples were cracked and 5 other samples were measured. Profilometer was used for warpage measurement where results were implemented to ANSYS Workbench simulation model. The output of the work is the basic methodology of measurement, simulation and evaluation to determine von-Mises stress from the warpage of semiconductor carrier. Results from this work will help with the prediction of semiconductor die warpage due to encapsulation material cure shrinkage and silicon substrate parameters.","PeriodicalId":373085,"journal":{"name":"2023 46th International Spring Seminar on Electronics Technology (ISSE)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-05-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130326940","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Interconnection of Highly Flexible Carbon Threads Suitable for Wearable Strain Monitoring using Ultrasonic Plastic Welding 适用于可穿戴应变监测的高柔性碳螺纹的超声塑料焊接互连
2023 46th International Spring Seminar on Electronics Technology (ISSE) Pub Date : 2023-05-10 DOI: 10.1109/ISSE57496.2023.10168382
Michaela Radouchová, M. Janda, David Kalaš, T. Blecha
{"title":"Interconnection of Highly Flexible Carbon Threads Suitable for Wearable Strain Monitoring using Ultrasonic Plastic Welding","authors":"Michaela Radouchová, M. Janda, David Kalaš, T. Blecha","doi":"10.1109/ISSE57496.2023.10168382","DOIUrl":"https://doi.org/10.1109/ISSE57496.2023.10168382","url":null,"abstract":"The paper deals with the contacting of highly flexible carbon threads spun by polyamide (PAD) embedded in an elastic fabric suitable for strain monitoring and testing of interconnection reliability. These carbon threads are suitable as strain sensors due to their high flexibility, their electrical resistance is dependent on stretching and it is possible to integrate them into textiles and thus create wearable textile strain sensors. Interconnection of the carbon threads to the textile or flexible substrates is important for smart textile applications. The initial impulse for this study was a creation of a user-friendly interconnection of a conventional electronic with an arm sleeve with integrated carbon threads for strain monitoring. Carbon threads were connected to conductive textile ribbons by ultrasonic plastic welding. The conductive ribbon can be used as a busbar for interconnecting the textile sensor (made of carbon threads) and the conventional electronics module (e.g. wearable evaluation unit, Bluetooth, or Internet of things module). The contacts made by ultrasonic welding were further stressed using a cyclic stretch test, the reliability of this interconnection and the rate of dependence of electrical resistance on stretching were verified.","PeriodicalId":373085,"journal":{"name":"2023 46th International Spring Seminar on Electronics Technology (ISSE)","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-05-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131039817","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Compact Model of Junctionless Nanowire Transistor for Air-Pollution Sensor 空气污染传感器用无结纳米线晶体管的紧凑模型
2023 46th International Spring Seminar on Electronics Technology (ISSE) Pub Date : 2023-05-10 DOI: 10.1109/ISSE57496.2023.10168462
G. Angelov, M. Spasova, V. Garistov, D. Nikolov, I. Ruskova, R. Rusev, E. Gieva, R. Radonov, M. Hristov, Y. Georgiev, Sayantan Ghosh, M. Khan, R. Rusev
{"title":"Compact Model of Junctionless Nanowire Transistor for Air-Pollution Sensor","authors":"G. Angelov, M. Spasova, V. Garistov, D. Nikolov, I. Ruskova, R. Rusev, E. Gieva, R. Radonov, M. Hristov, Y. Georgiev, Sayantan Ghosh, M. Khan, R. Rusev","doi":"10.1109/ISSE57496.2023.10168462","DOIUrl":"https://doi.org/10.1109/ISSE57496.2023.10168462","url":null,"abstract":"The paper presents a junctionless nanowire transistor (JLNT) compact model. The model is developed based on the compact model of J. P. Collinge and it is implemented in Matlab. The modeled JLNT is the core device of an air-pollution sensor for real-time detection of atmospheric radicals. The device configurations are modeled and compared versus experimental measurements of prototypes fabricated at the Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf (Germany). Modeled device structures were fabricated on ultra-thin SOI substrates using electron beam and UV lithography processes, reactive ion etching, rapid thermal oxidation, thermal evaporation, rapid thermal annealing. Electrical device characteristics are compared for two types of fabricated devices. The average integral error of our model compared to the measured characteristics is between 2.83% and 9.30% for both device types.","PeriodicalId":373085,"journal":{"name":"2023 46th International Spring Seminar on Electronics Technology (ISSE)","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-05-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129877501","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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