发布求助
文献互助 智能选刊 最新文献

2011 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices Proceedings最新文献

筛选
英文 中文
Formation of complexes of quantum dots InAs and nanoclusters as in matrix GaAs by molecular beam epitaxy 分子束外延法在基质砷化镓中形成量子点、InAs和纳米团簇配合物
2011 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices Proceedings Pub Date : 2011-08-30 DOI: 10.1109/EDM.2011.6006906
A. Zaichenko, B. Semyagin, V. Preobrazhenskii, M. A. Putyato, V. Nevedomskii, V. Chaldyshev, N. Bert
{"title":"Formation of complexes of quantum dots InAs and nanoclusters as in matrix GaAs by molecular beam epitaxy","authors":"A. Zaichenko, B. Semyagin, V. Preobrazhenskii, M. A. Putyato, V. Nevedomskii, V. Chaldyshev, N. Bert","doi":"10.1109/EDM.2011.6006906","DOIUrl":"https://doi.org/10.1109/EDM.2011.6006906","url":null,"abstract":"Epitaxial GaAs layers containing InAs semiconductor quantum dots and As metal quantum dots are grown by molecular beam epitaxy. The In As quantum dots are formed by the Stranski-Krastanov mechanism, and the As quantum dots are self-assembled in the GaAs layer grown at low temperature with a large As excess. The microstructure of the samples is studied by transmission electron microscopy. It is established that the As metal quantum dots formed in the immediate vicinity of the InAs semiconductor quantum dots are larger in size than the As quantum dots formed far from the InAs quantum dots. This is apparently due to the effect of strain fields of the InAs quantum dots upon the self-assembling of As quantum dots. Another phenomenon apparently associated with local strains around the InAs quantum dots is the formation of stacking faults during the overgrowth of the InAs quantum dots with the GaAs layer by low-temperature molecular beam epitaxy. Such defects have a profound effect on the self-assembling of As quantum dots. Specifically, on high-temperature annealing needed for the formation of large-sized As quantum dots by Ostwald ripening, the stacking faults bring about the dissolution of the As quantum dots in the vicinity of the defects. In this case, excess arsenic most probably diffuses towards the open surface of the sample via the channels of accelerated diffusion in the planes of stacking faults.","PeriodicalId":369789,"journal":{"name":"2011 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices Proceedings","volume":"201 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127672249","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Nanotexturing of ceramic products surface by means of low-energy electron and laser exposure 利用低能电子和激光曝光技术对陶瓷制品表面进行纳米织构
2011 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices Proceedings Pub Date : 2011-08-30 DOI: 10.1109/EDM.2011.6006904
E. V. Savruk, S. V. Smirnov
{"title":"Nanotexturing of ceramic products surface by means of low-energy electron and laser exposure","authors":"E. V. Savruk, S. V. Smirnov","doi":"10.1109/EDM.2011.6006904","DOIUrl":"https://doi.org/10.1109/EDM.2011.6006904","url":null,"abstract":"Results of research of near-surface layer of aluminum oxide ceramics thin plates were presented. Layers were produced by treatment of electron beam (5 keV energy) — electron beam treatment (EBT) — and laser beam (1.06 um wavelength) exposure — laser treatment (LT). The composition and structure of near-surface layer were researched by methods of electron microscopy, X-ray structure analysis and IR Fourier spectroscopy. It was shown that in case of LT the chevron texture occurred as a result of ceramics melting with following recrystallization in 110 direction. In connection with this fact potentialities of directed alteration of surface texture appear. It can be performed by changing of laser beam power density and its scanning speed. Mechanical properties of modified layers were researched by method of microhardness indentation with use of Vickers diamond pyramid. It has been established that destruction viscosity factor increases up to 6% at the expense of compressing elastic stress occurrence due to processes of melting and crystallization.","PeriodicalId":369789,"journal":{"name":"2011 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices Proceedings","volume":"1997 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127322627","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Elaboration of continuous wavelet transform parameters for problems of ultrasonic thickness gauging 超声测厚问题中连续小波变换参数的阐述
2011 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices Proceedings Pub Date : 2011-08-30 DOI: 10.1109/EDM.2011.6006970
V. Efimov, J. N. Lozhkova
{"title":"Elaboration of continuous wavelet transform parameters for problems of ultrasonic thickness gauging","authors":"V. Efimov, J. N. Lozhkova","doi":"10.1109/EDM.2011.6006970","DOIUrl":"https://doi.org/10.1109/EDM.2011.6006970","url":null,"abstract":"The theoretical work presents elaboration of continuous wavelet transform parameters for problems of ultrasonic thickness gauging. The advantage of the processing method using synthesized wavelets as compared with the correlation method in case of difference between an extracted signal and a reference one at signal-to-noise ratio of 1–3 has been shown using the stability criterion.","PeriodicalId":369789,"journal":{"name":"2011 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices Proceedings","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131570257","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Estimation of RF propagation channel transfer function with consideration about its priori structure 考虑先验结构的射频传播信道传递函数估计
2011 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices Proceedings Pub Date : 2011-08-30 DOI: 10.1109/EDM.2011.6006926
A. S. Vershinin, E. Voroshilin, E. Rogozhnikov, Denis Y. Maikov
{"title":"Estimation of RF propagation channel transfer function with consideration about its priori structure","authors":"A. S. Vershinin, E. Voroshilin, E. Rogozhnikov, Denis Y. Maikov","doi":"10.1109/EDM.2011.6006926","DOIUrl":"https://doi.org/10.1109/EDM.2011.6006926","url":null,"abstract":"This article is devoted to development of RF propagation channel transfer function estimation method using priori channel properties for increasing its accuracy. This work based on the conventional approaches for RF propagation channel transfer function estimation, such as least-squares, Kalman filter, Wiener filter. The consideration about RF propagation channel properties allows to increase sufficiently the estimation accuracy of RF propagation channel transfer function.","PeriodicalId":369789,"journal":{"name":"2011 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices Proceedings","volume":"70 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132806742","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Formation of two-dimensional photonic crystals by electron-beam lithography 利用电子束光刻技术形成二维光子晶体
2011 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices Proceedings Pub Date : 2011-08-30 DOI: 10.1109/EDM.2011.6006911
D. Utkin, D. A. Nasimov
{"title":"Formation of two-dimensional photonic crystals by electron-beam lithography","authors":"D. Utkin, D. A. Nasimov","doi":"10.1109/EDM.2011.6006911","DOIUrl":"https://doi.org/10.1109/EDM.2011.6006911","url":null,"abstract":"The approach to formation of two-dimensional photonic crystals with preset sizes of elements by the electron-beam lithography (EBL) is presented. The main problems appearing during formation of these structures are considered.","PeriodicalId":369789,"journal":{"name":"2011 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices Proceedings","volume":"189 ","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"113949392","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Technological factors having effect on calibration of beam heat flux sensor 影响热流传感器标定的工艺因素
2011 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices Proceedings Pub Date : 2011-08-30 DOI: 10.1109/EDM.2011.6006921
Mariya N. Polyashchenkova, Mikhail A. Chebanov, O. V. Lobach
{"title":"Technological factors having effect on calibration of beam heat flux sensor","authors":"Mariya N. Polyashchenkova, Mikhail A. Chebanov, O. V. Lobach","doi":"10.1109/EDM.2011.6006921","DOIUrl":"https://doi.org/10.1109/EDM.2011.6006921","url":null,"abstract":"The paper discusses the influence of different technological factors on calibration of heat flux sensor output signal. The analysis was carried out by numerical simulation with ANSYS software.","PeriodicalId":369789,"journal":{"name":"2011 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices Proceedings","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128503174","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Comparison of algorithms for construction of logical channels for secondary subscribers 二级用户逻辑信道构造算法的比较
2011 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices Proceedings Pub Date : 2011-08-30 DOI: 10.1109/EDM.2011.6006928
O. Melentyev, Nikita Lyamin, D. V. Kleiko
{"title":"Comparison of algorithms for construction of logical channels for secondary subscribers","authors":"O. Melentyev, Nikita Lyamin, D. V. Kleiko","doi":"10.1109/EDM.2011.6006928","DOIUrl":"https://doi.org/10.1109/EDM.2011.6006928","url":null,"abstract":"In this work the problems of flexible access are considered. Two algorithms for construction of logical channels for secondary subscribers are described. Efficiency of algorithms is compared by final probability of slot inaccessibility in the logical channel.","PeriodicalId":369789,"journal":{"name":"2011 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices Proceedings","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129275008","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Formation of HfO2/GaAs(001) interface with Si interlayer HfO2/GaAs(001)界面与Si夹层的形成
2011 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices Proceedings Pub Date : 2011-08-30 DOI: 10.1109/EDM.2011.6006887
V. Golyashov, M. Aksenov, Natalya A. Valisheva, I. Prosvirin, A. V. Kalinkin, V. Preobrazhensky, M. A. Putyato, B. Semyagin, O. Tereshchenko
{"title":"Formation of HfO2/GaAs(001) interface with Si interlayer","authors":"V. Golyashov, M. Aksenov, Natalya A. Valisheva, I. Prosvirin, A. V. Kalinkin, V. Preobrazhensky, M. A. Putyato, B. Semyagin, O. Tereshchenko","doi":"10.1109/EDM.2011.6006887","DOIUrl":"https://doi.org/10.1109/EDM.2011.6006887","url":null,"abstract":"Composition and electrical characteristics of HfO<inf>2</inf>/Si/GaAs(001) interface formed by e-beam evaporation of Hf in NO<inf>2</inf> ambient on MBE-grown Si/GaAs structure, were studied by XPS and C-V methods. The deposition of HfO<inf>2</inf> on Si-passivated GaAs(001) surface leads to the formation of sharp HfO<inf>2</inf>/Si/GaAs interface without oxidation of Si interlayer. AFM studies of the HfO<inf>2</inf>/Si/GaAs(001) interface show that HfO<inf>2</inf> deposition preserved the flatness of the surface, keeping the mean roughness on the terraces on a level of approximately 0.2–0.3 nm.","PeriodicalId":369789,"journal":{"name":"2011 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices Proceedings","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117070222","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The influence of low-temperature annealing on properties of heterostructures p-HgCdTe grown by molecular-beam epitaxy 低温退火对分子束外延生长p-HgCdTe异质结构性能的影响
2011 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices Proceedings Pub Date : 2011-08-30 DOI: 10.1109/EDM.2011.6006891
D. V. Kombarov, D. Protasov, V. Kostyuchenko
{"title":"The influence of low-temperature annealing on properties of heterostructures p-HgCdTe grown by molecular-beam epitaxy","authors":"D. V. Kombarov, D. Protasov, V. Kostyuchenko","doi":"10.1109/EDM.2011.6006891","DOIUrl":"https://doi.org/10.1109/EDM.2011.6006891","url":null,"abstract":"In heterostructures p-HgCdTe changes of density and mobility of major carriers, mobility and lifetime of minor carriers were investigated after some contacts with water and annealing at 80°C. The obtained dependencies for samples from various heterostructures have a strong difference. For some heterostructures the density of major carriers and lifetime of minor carriers sharply increased after such treatments.","PeriodicalId":369789,"journal":{"name":"2011 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices Proceedings","volume":"126 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115619713","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Studying of solid-state power supply unit of CuBr-laser cubr激光器固态电源单元的研究
2011 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices Proceedings Pub Date : 2011-08-30 DOI: 10.1109/EDM.2011.6006984
S. Torgaev, M. Trigub, F. Gubarev
{"title":"Studying of solid-state power supply unit of CuBr-laser","authors":"S. Torgaev, M. Trigub, F. Gubarev","doi":"10.1109/EDM.2011.6006984","DOIUrl":"https://doi.org/10.1109/EDM.2011.6006984","url":null,"abstract":"The paper presents the results of the study of solid-state power supply units for pumping CuBr-lasers of various geometry. The possibility of developing solid-state high-frequency (>100 kHz) power supply units is demonstrated, and the results of simulation and breadboarding of solid-state high-voltage power supply units for pumping CuBr-lasers are discussed.","PeriodicalId":369789,"journal":{"name":"2011 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices Proceedings","volume":"221 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114586766","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
首页 上一页 下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：604180095
Book学术官方微信