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IEEE CPMT Symposium Japan 2014最新文献

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Silica nanowires as new coating material for high-efficiency light reflection in LED system 二氧化硅纳米线作为LED系统中高效光反射的新型涂层材料
IEEE CPMT Symposium Japan 2014 Pub Date : 2014-11-01 DOI: 10.1109/ICSJ.2014.7009602
S. Xi, T. Shi, Xiaoping Li, Zirong Tang
{"title":"Silica nanowires as new coating material for high-efficiency light reflection in LED system","authors":"S. Xi, T. Shi, Xiaoping Li, Zirong Tang","doi":"10.1109/ICSJ.2014.7009602","DOIUrl":"https://doi.org/10.1109/ICSJ.2014.7009602","url":null,"abstract":"Randomly distributed silica nanowires show highly reflectivity in the whole visible wavelength, which can be used as white light coating for high-efficiency optoelectronic packaging as affirmed by our previous work. In this work, an improved process has been developed to recombine the silica nanowires as optical coating of LED reflector cup to form diffusive reflecting surface in LED packaging. This recombination was realized through two-step process: the synthesized silica nanowires were first dispersed in distilled water via artful magnetic stirring and then absorbed on specular surface by Van der Waals' force. This work provides an alternative and low-cost method for the improvement of lighting systems.","PeriodicalId":362502,"journal":{"name":"IEEE CPMT Symposium Japan 2014","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130366225","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A study on differential mode to common mode conversion due to asymmetric structure in differential transmission line 差分传输线结构不对称导致的差模到共模转换研究
IEEE CPMT Symposium Japan 2014 Pub Date : 2014-11-01 DOI: 10.1109/ICSJ.2014.7009606
Ayumi Motohashi, F. Nakamoto, Y. Sasaki, N. Oka, H. Oh-Hashi
{"title":"A study on differential mode to common mode conversion due to asymmetric structure in differential transmission line","authors":"Ayumi Motohashi, F. Nakamoto, Y. Sasaki, N. Oka, H. Oh-Hashi","doi":"10.1109/ICSJ.2014.7009606","DOIUrl":"https://doi.org/10.1109/ICSJ.2014.7009606","url":null,"abstract":"Recently, differential transmission lines which have low electromagnetic radiation performance are widely used for high speed digital interconnections. Though high electrical balance is required to obtain that performance, degradation of the balance may often occur from asymmetry of the structure, such as additional patterns and electrical components connected to one or both of single lines of differential transmission line. In that case, some part of differential-mode signal is converted to common-mode signal, which may often increase electromagnetic radiation from the differential transmission line. It is therefore important to reduce the differential mode to common mode conversion ratio (Scd21) by keeping the electrical balance in the design stage in order to provide low EMI equipments. In this paper, we present an equivalent circuit model to evaluate the mode conversion due to the asymmetry of structure. The additionally connected patterns and components are modeled with a shunt capacitor connected between the single line and the ground. Then, Scd21 can be expressed as a simple function of the frequency and the capacitance difference between each single line of the differential transmission line, and is independent on the position of the capacitors. The proposed model is verified by the comparison of calculated Scd21 with the experimental results, and is applicable in low EMI design of differential transmission lines.","PeriodicalId":362502,"journal":{"name":"IEEE CPMT Symposium Japan 2014","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131986312","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Soldering material for fine PoP (Package on Package) 精细PoP焊锡材料(包上包)
IEEE CPMT Symposium Japan 2014 Pub Date : 2014-11-01 DOI: 10.1109/ICSJ.2014.7009613
Yutaka Hashimoto, Shunsuke Nakano, K. Takagi, Yuji Kawamata
{"title":"Soldering material for fine PoP (Package on Package)","authors":"Yutaka Hashimoto, Shunsuke Nakano, K. Takagi, Yuji Kawamata","doi":"10.1109/ICSJ.2014.7009613","DOIUrl":"https://doi.org/10.1109/ICSJ.2014.7009613","url":null,"abstract":"The packages for PoP process will become finer as 0.3mm pitch and it is necessary for solder materials to choice finer powder as Type6 because of the better transfer capability and soldering capability.","PeriodicalId":362502,"journal":{"name":"IEEE CPMT Symposium Japan 2014","volume":"101 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122541423","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
3.3-Tb/s compact optical fiber package using pre-formed optical fiber 3.3 tb /s紧凑光纤封装，采用预制光纤
IEEE CPMT Symposium Japan 2014 Pub Date : 2014-11-01 DOI: 10.1109/ICSJ.2014.7009620
Rika Nomura, N. Chujo, Akiko Mizushima, N. Matsushima, Kouichi Fukumiya, Itoe Akutsu, Koji Hata
{"title":"3.3-Tb/s compact optical fiber package using pre-formed optical fiber","authors":"Rika Nomura, N. Chujo, Akiko Mizushima, N. Matsushima, Kouichi Fukumiya, Itoe Akutsu, Koji Hata","doi":"10.1109/ICSJ.2014.7009620","DOIUrl":"https://doi.org/10.1109/ICSJ.2014.7009620","url":null,"abstract":"We developed a compact optical fiber package for rack-to-rack transmission in information communication technology. Using pre-formed optical fiber instead of optical fiber strands and ribbon fiber, we achieved a reduction in the routing area and protection of the optical fiber. We fabricated a prototype mock-up board with optical modules and achieved a bandwidth of 3.3 Tb/s and an area of 4500 mm2. We confirmed a good transmission performance board-to-board with 5 m of optical cable at 25 Gb/s (PRBS: 231-1).","PeriodicalId":362502,"journal":{"name":"IEEE CPMT Symposium Japan 2014","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128667453","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High-speed optical beam scanning using KTN crystal 利用KTN晶体进行高速光束扫描
IEEE CPMT Symposium Japan 2014 Pub Date : 2014-11-01 DOI: 10.1109/ICSJ.2014.7009638
T. Sakamoto, S. Toyoda, M. Ueno, J. Kobayashi
{"title":"High-speed optical beam scanning using KTN crystal","authors":"T. Sakamoto, S. Toyoda, M. Ueno, J. Kobayashi","doi":"10.1109/ICSJ.2014.7009638","DOIUrl":"https://doi.org/10.1109/ICSJ.2014.7009638","url":null,"abstract":"500 kHz optical beam scanning with a full scan angle of over 100 mrad is demonstrated using a potassium tantalite niobate (KTa1-xNbxO3, KTN) deflector. To suppress any heating of the KTN chips during the high frequency operation and to have a sufficient interaction length to achieve more than 100 mrad deflection, the deflector consists of two KTN chips each of which has a pentagon-shaped electrode surface whose longest side is shortened to 1.5 mm. The full scan angle of the deflector is measured and the KTN temperature dependence of the permittivity accounts for the voltage and frequency dependence of the scan angle.","PeriodicalId":362502,"journal":{"name":"IEEE CPMT Symposium Japan 2014","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126138835","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A compact 25-Gbit/s × 4ch optical interconnect module with straddle-shaped optical and electrical interface 25gbit /s × 4ch光互连模块，采用跨座式光电接口
IEEE CPMT Symposium Japan 2014 Pub Date : 2014-11-01 DOI: 10.1109/ICSJ.2014.7009626
Y. Matsuoka, Yong Lee, H. Arimoto, Masataka Sato, S. Komatsuzaki, Akira Ogura, K. Yamazaki, Y. Sunaga, T. Takai, N. Chujo, N. Matsushima
{"title":"A compact 25-Gbit/s × 4ch optical interconnect module with straddle-shaped optical and electrical interface","authors":"Y. Matsuoka, Yong Lee, H. Arimoto, Masataka Sato, S. Komatsuzaki, Akira Ogura, K. Yamazaki, Y. Sunaga, T. Takai, N. Chujo, N. Matsushima","doi":"10.1109/ICSJ.2014.7009626","DOIUrl":"https://doi.org/10.1109/ICSJ.2014.7009626","url":null,"abstract":"A compact 25-Gbit/s × 4-ch embedded optical module (EOM) composed of a straddle-shaped optical and electrical interface was fabricated and evaluated. The fabricated EOM provides highly efficient optical coupling and large optical-coupling tolerance, and it successfully demonstrated 25-Gbit/s error-free optical transmission. These optical performance results indicate that the fabricated compact EOM can be applied for on-board and rack-to-rack optical interconnections with high transmission density.","PeriodicalId":362502,"journal":{"name":"IEEE CPMT Symposium Japan 2014","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129426545","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Photosensitive insulation coating for a copper redistribution layer process 一种用于铜重分布层的光敏绝缘涂层工艺
IEEE CPMT Symposium Japan 2014 Pub Date : 2014-11-01 DOI: 10.1109/ICSJ.2014.7009622
H. Matsutani, Kazuyuki Mitsukura, T. Makino, F. Duval, M. Detalle, Andy Miller, E. Beyne
{"title":"Photosensitive insulation coating for a copper redistribution layer process","authors":"H. Matsutani, Kazuyuki Mitsukura, T. Makino, F. Duval, M. Detalle, Andy Miller, E. Beyne","doi":"10.1109/ICSJ.2014.7009622","DOIUrl":"https://doi.org/10.1109/ICSJ.2014.7009622","url":null,"abstract":"Redistribution on a through-silicon via (TSV) with a copper interconnection and dielectric layer is one of the key components for a silicon-based interposer. In this paper, we report lithographic and mechanical performance for a positive-tone photosensitive insulation coating, CA6001B. Minimum resolution for CA6001B is 3 μm determined by electrical measurement with a test wafer having a copper redistribution and the patterned insulation layers. The CA6001B is one of the promising dielectric coatings for interposers possessing TSV and redistribution layer (RDL) structures.","PeriodicalId":362502,"journal":{"name":"IEEE CPMT Symposium Japan 2014","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133280828","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Low power penalty, dry-film polymer waveguides for silicon photonics chip packaging 用于硅光子学芯片封装的低功耗干膜聚合物波导
IEEE CPMT Symposium Japan 2014 Pub Date : 2014-11-01 DOI: 10.1109/ICSJ.2014.7009599
Hsiang-Han Hsu, S. Nakagawa
{"title":"Low power penalty, dry-film polymer waveguides for silicon photonics chip packaging","authors":"Hsiang-Han Hsu, S. Nakagawa","doi":"10.1109/ICSJ.2014.7009599","DOIUrl":"https://doi.org/10.1109/ICSJ.2014.7009599","url":null,"abstract":"Two types of polymer waveguides made by dry film process are characterized for silicon photonics chip packaging. In this paper, both DC and high-speed performance of the waveguides are demonstrated. DC characterization includes coupling loss from/to a single-mode fiber (SMF), near field pattern (NFP), far field pattern (FFP), and alignment tolerance measurement. The designed values for the waveguide cores are 10 μm in height and 14 μm in width. In terms of obtaining small enough coupling loss with butt coupling between the waveguides and SMFs, two kinds of numerical aperture (NA), 0.13 and 0.35, are selected. On the other hand, high-speed transmission experiments were tested by eye patterns. Clear eye openings were observed up to 25 Gbps. The results show dry-film polymer waveguides are one of a promising solutions for silicon photonics chip packaging used in next generation optical multi-chip module (MCM).","PeriodicalId":362502,"journal":{"name":"IEEE CPMT Symposium Japan 2014","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114357139","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Evaluation of thermal interface material with electric capacitance measurement: A new method using metal meshes to present finer surface roughness levels 用电容测量评价热界面材料:一种使用金属网格来呈现更精细表面粗糙度水平的新方法
IEEE CPMT Symposium Japan 2014 Pub Date : 2014-11-01 DOI: 10.1109/ICSJ.2014.7009597
Y. Saito, Satoru Suzuki, T. Komuro
{"title":"Evaluation of thermal interface material with electric capacitance measurement: A new method using metal meshes to present finer surface roughness levels","authors":"Y. Saito, Satoru Suzuki, T. Komuro","doi":"10.1109/ICSJ.2014.7009597","DOIUrl":"https://doi.org/10.1109/ICSJ.2014.7009597","url":null,"abstract":"In electronic devices, the thermal characteristics of thermal interface materials are strongly affected by their heat sink contact conditions. In this study, we evaluate the thermal contact resistance between a heat sink and thermal interface materials and then present heat sink roughness levels using metal meshes. We also confirm the effectiveness of our new method via thermal resistance and electrical capacitance measurement experiments.","PeriodicalId":362502,"journal":{"name":"IEEE CPMT Symposium Japan 2014","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116713570","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
1060-nm VCSEL-based 28-Gb/s × 4-channnel optical signal transmission beyond 500-m MMF using high-density parallel-optical modules 基于1060 nm vcsel的28 gb /s × 4通道光信号传输，采用高密度并行光模块，传输距离超过500 m MMF
IEEE CPMT Symposium Japan 2014 Pub Date : 2014-11-01 DOI: 10.1109/ICSJ.2014.7009627
K. Nagashima, T. Kise, Y. Ishikawa, H. Nasu
{"title":"1060-nm VCSEL-based 28-Gb/s × 4-channnel optical signal transmission beyond 500-m MMF using high-density parallel-optical modules","authors":"K. Nagashima, T. Kise, Y. Ishikawa, H. Nasu","doi":"10.1109/ICSJ.2014.7009627","DOIUrl":"https://doi.org/10.1109/ICSJ.2014.7009627","url":null,"abstract":"We demonstrate an error free 28-Gb/s × 4-channel parallel-optical link using Sn-Ag-Cu solder reflow-capable miniature 1060-nm VCSEL-based optical modules. As an alternative solution to PSM4, we achieved error free transmission in 50-micrometer-core MMF beyond 500 m, owing to a low chromatic dispersion at 1060-nm, when the modules are operated at a bit stream of 28-Gb/s 231-1 PRBS.","PeriodicalId":362502,"journal":{"name":"IEEE CPMT Symposium Japan 2014","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131851583","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
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