{"title":"Extended test results from scandia-doped tungsten dispenser cathodes","authors":"J. Paff, G. Rudd, B. Vancil","doi":"10.1109/IVEC.2016.7561806","DOIUrl":"https://doi.org/10.1109/IVEC.2016.7561806","url":null,"abstract":"Spectra-Mat, Inc scandia-doped tungsten powder and matrices were tested up to 19,500 hours with minimal increases in kneepoint temperature at 5 A/cm2 emission density. Cathodes were run in an accelerated life test, 100°C above the kneepoint. Data from all cathodes show consistent emission at 5 A/cm2 at or below ~900°C during the testing. Spectra-Mat has continued the development process to create powders of larger size, such that current (and routine) brazing and sintering operations might be available for processing scandia doped tungsten materials, minimizing the development of new methods for all size cathodes.","PeriodicalId":361429,"journal":{"name":"2016 IEEE International Vacuum Electronics Conference (IVEC)","volume":"203 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131680435","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Metamaterial design for a metamaterial-enhanced resistive wall amplifier","authors":"Tyler Rowe, N. Behdad, J. Booske","doi":"10.1109/IVEC.2016.7561792","DOIUrl":"https://doi.org/10.1109/IVEC.2016.7561792","url":null,"abstract":"The metamaterial-enhanced resistive wall amplifier (ME-RWA) has been shown to theoretically have higher wideband gain than many commercially available high power microwave amplifiers. Previous work has idealized the situation by assuming the metamaterial of the structure to be a homogenous dielectric with a Drude dispersion model. This work investigates a practical meander line implementation of the metamaterial liner for the ME-RWA.","PeriodicalId":361429,"journal":{"name":"2016 IEEE International Vacuum Electronics Conference (IVEC)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121630471","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Nanovircator as perspective microelectronic source of subterahertz radiation","authors":"S. Kurkin, N. Frolov, A. Koronovskii, A. Hramov","doi":"10.1109/IVEC.2016.7561946","DOIUrl":"https://doi.org/10.1109/IVEC.2016.7561946","url":null,"abstract":"We suggest the novel vacuum microelectronic device that operates at subterahertz frequency range above 100 GHz with output power of 1W. It is based on the use of the overcritical electron beams with oscillating virtual cathode. In this work we discuss the results of numerical simulation and optimization of this novel compact vacuum device called as nanovircator. The results of the numerical studies show the possibility of nanovircator operation at 0.1-0.4 THz frequency range.","PeriodicalId":361429,"journal":{"name":"2016 IEEE International Vacuum Electronics Conference (IVEC)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126103454","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Y. Lim, A. Avramchuck, D. Grapov, B. Tay, S. Aditya, V. Labunov
{"title":"Field emission characteristics of short CNT bundles","authors":"Y. Lim, A. Avramchuck, D. Grapov, B. Tay, S. Aditya, V. Labunov","doi":"10.1109/IVEC.2016.7561783","DOIUrl":"https://doi.org/10.1109/IVEC.2016.7561783","url":null,"abstract":"The outstanding field emission characteristics of Carbon Nanotubes (CNT) offer promising potential for a wide range of vacuum electronics applications. In this study, short (1 μm) CNT arrays were grown selectively on SiO2/Si substrates using ferrocene/xylene catalyst source. High field emission current density of 366.7 mA/cm2 was obtained. A common field enhancement factor (β) value of 326 was obtained for CNT bundles with various separation distances.","PeriodicalId":361429,"journal":{"name":"2016 IEEE International Vacuum Electronics Conference (IVEC)","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126835650","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Ternary ReB6 emitters: A brief study","authors":"V. Katsap","doi":"10.1109/IVEC.2016.7561780","DOIUrl":"https://doi.org/10.1109/IVEC.2016.7561780","url":null,"abstract":"Binary rare-earth lanthanum hexaborides LaB6 and CeB6 have been successfully used in specialty electron guns, such as e-beam lithography systems, for over two decades. During this time, there were a few papers suggesting ternary compound crystal ReB6 may be a better emitter than binary crystals. We have started studying basic emissive properties of the ternary compound LaxCe1-xB6.","PeriodicalId":361429,"journal":{"name":"2016 IEEE International Vacuum Electronics Conference (IVEC)","volume":"152 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114260372","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Observation of oscillations in a TWT with poor-quality electron beam","authors":"Chengxi Zhao, S. Aditya","doi":"10.1109/IVEC.2016.7561881","DOIUrl":"https://doi.org/10.1109/IVEC.2016.7561881","url":null,"abstract":"This paper presents observation of oscillations in TWT simulations at a frequency close to the band edge frequency when the electron beam is not well-focused and well-aligned. The cause of the oscillations is suggested to be backward-wave oscillations.","PeriodicalId":361429,"journal":{"name":"2016 IEEE International Vacuum Electronics Conference (IVEC)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114295749","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Guangjiang Yuan, Yanwei Li, Linlin Cao, Hong-xia Yi, Liu Xiao, Xiao-bao Su
{"title":"Influence of interface status on heat dissipation capability of collector for travelling wave tube","authors":"Guangjiang Yuan, Yanwei Li, Linlin Cao, Hong-xia Yi, Liu Xiao, Xiao-bao Su","doi":"10.1109/IVEC.2016.7561915","DOIUrl":"https://doi.org/10.1109/IVEC.2016.7561915","url":null,"abstract":"In the paper, Influence of interface status (ratio of brazing area and fit clearance) of brazed collector parts on contact heat resistance was theoretically analysised. And by ANSYS simulation, influence of ratio of brazing area and fit clearance on heat dissipation capability of collector for travelling wave tube was studied.","PeriodicalId":361429,"journal":{"name":"2016 IEEE International Vacuum Electronics Conference (IVEC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128024112","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Nanofabrication with lanthanum hexaboride (LaB6) for nanoscale vacuum electronics","authors":"Max N. Mankin, Tony S. Pan","doi":"10.1109/IVEC.2016.7561801","DOIUrl":"https://doi.org/10.1109/IVEC.2016.7561801","url":null,"abstract":"We present the first nano- and microfabrication of vacuum microelectronic components incorporating lanthanum hexaboride (LaB6), a refractory low work function material with high electron emissivity. We design novel fabrication processes which yield ultra-low fill factor (<;10%) nanoscale grids of 50 nm width on LaB6 electrodes and nanoscale LaB6 tips over ~mm2 scales. Finally, we briefly discuss future applications in which such nanostructures will be applicable and ongoing R&D challenges with nanoscale grids.","PeriodicalId":361429,"journal":{"name":"2016 IEEE International Vacuum Electronics Conference (IVEC)","volume":"113 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133441324","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Commissioning test of S-band klystron/photo-gun system for femto-second sub-MeV electron beam R&D","authors":"A. Green, H. Panuganti, M. Figora, Y. Shin","doi":"10.1109/IVEC.2016.7561786","DOIUrl":"https://doi.org/10.1109/IVEC.2016.7561786","url":null,"abstract":"A timely stable femto-second electron beam system is being constructed for pump-probe time-resolved experiments and applications. A pulsed S-band klystron is installed and fully commissioned with 5.5 MW peak power in a 2.5 μs pulse length and 1 Hz repetition rate. A single-cell RF photo-gun is designed to produce with 0.16 - 1.6 pC electron bunches in a photo-emission mode within a 600 fs ∓ 3 ps at 0.5 - 1 MeV. The measured RF system jitters are within ± 1 % in magnitude and ± 0.2° in phase, which would induce 3.4 keV and 0.25 keV of ΔEg, corresponding to 80 fs and 5 fs of Δte, respectively. The beam brightness could be improved by replacing a conventional photo-cathode with field emission array or carbon nanotube tips as they limit the emission area, while providing high current emission. PIC simulations indicate that our designed bunch compressor reduces the TOA-jitter by about an order of magnitude. The transport and focusing optics of the designed beamline with the bunch compressor enables an energy spread within 10-4 and a bunch length (electron probe) within > 50 - 100 fs.","PeriodicalId":361429,"journal":{"name":"2016 IEEE International Vacuum Electronics Conference (IVEC)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133526729","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Yao-gen Ding, Dongping Gao, Bin Shen, Zhi-qiang Zhang
{"title":"The research on the low peak power Multi-Beam broadband Klystron","authors":"Yao-gen Ding, Dongping Gao, Bin Shen, Zhi-qiang Zhang","doi":"10.1109/IVEC.2016.7561859","DOIUrl":"https://doi.org/10.1109/IVEC.2016.7561859","url":null,"abstract":"One of the research projects of Multi-Beam Klystrons (MBKs) is to extend its bandwidth. The bandwidth of the MBKs strongly depends on its peak power and the cathode loading. In some applications, an S-band MBK with peak power of 30~50kW, bandwidth of 10%, efficiency of more than 25%, and the lifetime of more than 3000 hours is needed. In order to realize wide bandwidth at low peak power, the S band broadband MBKs with 7 beams are described in this paper. By using seven bunching cavities and a double-gap coupling cavity with π mode RF field structure, this S-band MBK can get bandwidth of ~10% and efficiency of more than 30%. The cathode loading is chosen at about 10A/cm2 for getting the lifetime of more than 3000 hours.","PeriodicalId":361429,"journal":{"name":"2016 IEEE International Vacuum Electronics Conference (IVEC)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132272419","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}