用六硼化镧(LaB6)制备纳米级真空电子学

2016 IEEE International Vacuum Electronics Conference (IVEC) Pub Date : 2016-04-01 DOI:10.1109/IVEC.2016.7561801

Max N. Mankin, Tony S. Pan

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引用次数: 1

摘要

我们首次提出了采用六硼化镧(LaB6)的真空微电子元件的纳米和微加工，这是一种具有高电子发射率的难熔低功功能材料。我们设计了新的制造工艺，可以在LaB6电极上产生50 nm宽度的超低填充因子(< 10%)纳米栅格和~mm2尺度的纳米LaB6尖端。最后，我们简要地讨论了这些纳米结构的未来应用，以及纳米尺度网格正在进行的研发挑战。

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Nanofabrication with lanthanum hexaboride (LaB6) for nanoscale vacuum electronics

We present the first nano- and microfabrication of vacuum microelectronic components incorporating lanthanum hexaboride (LaB6), a refractory low work function material with high electron emissivity. We design novel fabrication processes which yield ultra-low fill factor (<;10%) nanoscale grids of 50 nm width on LaB6 electrodes and nanoscale LaB6 tips over ~mm2 scales. Finally, we briefly discuss future applications in which such nanostructures will be applicable and ongoing R&D challenges with nanoscale grids.

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2016 IEEE International Vacuum Electronics Conference (IVEC)

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