Halbleiter und Phosphore最新文献

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Die magnetische Suszeptibilität von eisen-dotiertem Germanium 铁锤击德国人
Halbleiter und Phosphore Pub Date : 1958-12-31 DOI: 10.1007/978-3-663-02557-3_56
D. Geist, J. Hehnen
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引用次数: 0
Siliziumleistungsgleichrichter Siliziumleistungsgleichrichter
Halbleiter und Phosphore Pub Date : 1958-12-31 DOI: 10.1515/9783112591789-094
E. Spenke
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引用次数: 0
Hall and Conductivity Mobilities in p-Type Silicon p型硅的霍尔迁移率和电导率迁移率
Halbleiter und Phosphore Pub Date : 1958-12-31 DOI: 10.1007/978-3-663-02557-3_29
P. Lee
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引用次数: 0
Über den Effekt der Kathodothermolumineszenz 分析了天主教热性的关键
Halbleiter und Phosphore Pub Date : 1958-12-31 DOI: 10.1007/978-3-663-02557-3_67
H. Gobrecht, D. Hahn, K. Scheffler
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引用次数: 0
Growth and Defects of Semiconductor Crystals 半导体晶体的生长和缺陷
Halbleiter und Phosphore Pub Date : 1958-12-31 DOI: 10.1007/978-3-663-02557-3_1
E. Billig
{"title":"Growth and Defects of Semiconductor Crystals","authors":"E. Billig","doi":"10.1007/978-3-663-02557-3_1","DOIUrl":"https://doi.org/10.1007/978-3-663-02557-3_1","url":null,"abstract":"","PeriodicalId":351690,"journal":{"name":"Halbleiter und Phosphore","volume":"197 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1958-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123016104","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Elektrolumineszenz von suspendierten Sulfidphosphoren 硫化铁因硫化物受压而形成电状光
Halbleiter und Phosphore Pub Date : 1958-12-31 DOI: 10.1007/978-3-663-02557-3_14
H. A. Klasens
{"title":"Elektrolumineszenz von suspendierten Sulfidphosphoren","authors":"H. A. Klasens","doi":"10.1007/978-3-663-02557-3_14","DOIUrl":"https://doi.org/10.1007/978-3-663-02557-3_14","url":null,"abstract":"","PeriodicalId":351690,"journal":{"name":"Halbleiter und Phosphore","volume":"75 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1958-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131915979","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Surface Effects on the Diffusion of Impurities in Semiconductors 半导体中杂质扩散的表面效应
Halbleiter und Phosphore Pub Date : 1958-12-31 DOI: 10.1007/978-3-663-02557-3_20
F. Smits, R. Miller, R. L. Batdorf
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引用次数: 2
Fehlordnungseigenschaften am Silberjodid 银碘严重变形
Halbleiter und Phosphore Pub Date : 1958-12-31 DOI: 10.1007/978-3-663-02557-3_40
H. Oel
{"title":"Fehlordnungseigenschaften am Silberjodid","authors":"H. Oel","doi":"10.1007/978-3-663-02557-3_40","DOIUrl":"https://doi.org/10.1007/978-3-663-02557-3_40","url":null,"abstract":"","PeriodicalId":351690,"journal":{"name":"Halbleiter und Phosphore","volume":"263 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1958-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116526695","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Elektronen- und Ionenprozesse in Silberhalogenidkristallen 卤代电子和离子进程
Halbleiter und Phosphore Pub Date : 1958-12-31 DOI: 10.1007/978-3-663-02557-3_18
O. Stasiw
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引用次数: 0
Energiefragen beim Einbau von Fremdionen in Ionenkristalle 他没碰过任何人
Halbleiter und Phosphore Pub Date : 1958-12-31 DOI: 10.1007/978-3-663-02557-3_5
P. Brauer
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引用次数: 0
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