Halbleiter und Phosphore最新文献

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Zur Theorie der longitudinalen Widerstandsänderung in konvalenten Halbleitern 而且,你说了一套
Halbleiter und Phosphore Pub Date : 1958-12-31 DOI: 10.1007/978-3-663-02557-3_48
J. Appel
{"title":"Zur Theorie der longitudinalen Widerstandsänderung in konvalenten Halbleitern","authors":"J. Appel","doi":"10.1007/978-3-663-02557-3_48","DOIUrl":"https://doi.org/10.1007/978-3-663-02557-3_48","url":null,"abstract":"","PeriodicalId":351690,"journal":{"name":"Halbleiter und Phosphore","volume":"776 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1958-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128981145","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Methods for Determination of Distribution of Surface States in Ge and Si 锗和硅中表面态分布的测定方法
Halbleiter und Phosphore Pub Date : 1958-12-31 DOI: 10.1007/978-3-663-02557-3_6
J. Bardeen
{"title":"Methods for Determination of Distribution of Surface States in Ge and Si","authors":"J. Bardeen","doi":"10.1007/978-3-663-02557-3_6","DOIUrl":"https://doi.org/10.1007/978-3-663-02557-3_6","url":null,"abstract":"","PeriodicalId":351690,"journal":{"name":"Halbleiter und Phosphore","volume":"121 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1958-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123363919","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
p-n-Übergänge aus InP zum Nachweis von Neutronenstrahlung 中子辐射检测
Halbleiter und Phosphore Pub Date : 1958-12-31 DOI: 10.1007/978-3-663-02557-3_25
R. Gremmelmaier, H. Welker
{"title":"p-n-Übergänge aus InP zum Nachweis von Neutronenstrahlung","authors":"R. Gremmelmaier, H. Welker","doi":"10.1007/978-3-663-02557-3_25","DOIUrl":"https://doi.org/10.1007/978-3-663-02557-3_25","url":null,"abstract":"","PeriodicalId":351690,"journal":{"name":"Halbleiter und Phosphore","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1958-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116875023","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Über den Hochtemperatur-Leitungsmechanismus thermisch Elektronen emittierender Oxyde 用高温接收电污泥生成量
Halbleiter und Phosphore Pub Date : 1958-12-31 DOI: 10.1007/978-3-663-02557-3_30
A. Paulisch
{"title":"Über den Hochtemperatur-Leitungsmechanismus thermisch Elektronen emittierender Oxyde","authors":"A. Paulisch","doi":"10.1007/978-3-663-02557-3_30","DOIUrl":"https://doi.org/10.1007/978-3-663-02557-3_30","url":null,"abstract":"","PeriodicalId":351690,"journal":{"name":"Halbleiter und Phosphore","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1958-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133085984","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Some Statistical Problems in Semiconductors 半导体中的一些统计问题
Halbleiter und Phosphore Pub Date : 1958-12-31 DOI: 10.1007/978-3-663-02557-3_4
P. Landsberg
{"title":"Some Statistical Problems in Semiconductors","authors":"P. Landsberg","doi":"10.1007/978-3-663-02557-3_4","DOIUrl":"https://doi.org/10.1007/978-3-663-02557-3_4","url":null,"abstract":"","PeriodicalId":351690,"journal":{"name":"Halbleiter und Phosphore","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1958-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114777633","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Thermoelektrische und thermomagnetische Effekte in Halbleitern 而且如果你是半导体
Halbleiter und Phosphore Pub Date : 1958-12-31 DOI: 10.1007/978-3-663-02557-3_11
O. Madelung
{"title":"Thermoelektrische und thermomagnetische Effekte in Halbleitern","authors":"O. Madelung","doi":"10.1007/978-3-663-02557-3_11","DOIUrl":"https://doi.org/10.1007/978-3-663-02557-3_11","url":null,"abstract":"","PeriodicalId":351690,"journal":{"name":"Halbleiter und Phosphore","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1958-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122705946","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Der nicht-elektronische Energietransport in Phosphoren 磷化硫的非电子运输
Halbleiter und Phosphore Pub Date : 1958-12-31 DOI: 10.1007/978-3-663-02557-3_17
W. Hoogenstraaten
{"title":"Der nicht-elektronische Energietransport in Phosphoren","authors":"W. Hoogenstraaten","doi":"10.1007/978-3-663-02557-3_17","DOIUrl":"https://doi.org/10.1007/978-3-663-02557-3_17","url":null,"abstract":"","PeriodicalId":351690,"journal":{"name":"Halbleiter und Phosphore","volume":"73 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1958-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122780021","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Die Dotierung von Indiumarsenid mit den Metallen der ersten Nebengruppe des periodischen Systems 再给indiobd输掉定期系统第一组的金属
Halbleiter und Phosphore Pub Date : 1958-12-31 DOI: 10.1007/978-3-663-02557-3_62
E. Schillmann
{"title":"Die Dotierung von Indiumarsenid mit den Metallen der ersten Nebengruppe des periodischen Systems","authors":"E. Schillmann","doi":"10.1007/978-3-663-02557-3_62","DOIUrl":"https://doi.org/10.1007/978-3-663-02557-3_62","url":null,"abstract":"","PeriodicalId":351690,"journal":{"name":"Halbleiter und Phosphore","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1958-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123153267","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Trap Concentrations in Germanium, their Determination from Lifetime Measurements and the Relation to a Practical Breakdown Voltage in p-n Junction Rectifiers 锗的阱浓度,从寿命测量测定及其与pn结整流器实际击穿电压的关系
Halbleiter und Phosphore Pub Date : 1958-12-31 DOI: 10.1007/978-3-663-02557-3_23
F. Rose
{"title":"Trap Concentrations in Germanium, their Determination from Lifetime Measurements and the Relation to a Practical Breakdown Voltage in p-n Junction Rectifiers","authors":"F. Rose","doi":"10.1007/978-3-663-02557-3_23","DOIUrl":"https://doi.org/10.1007/978-3-663-02557-3_23","url":null,"abstract":"","PeriodicalId":351690,"journal":{"name":"Halbleiter und Phosphore","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1958-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129884133","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Über den Durchschlag in p-n-Übergängen in Germanium Über den Durchschlag in p-n-Übergängen in Germanium
Halbleiter und Phosphore Pub Date : 1958-12-31 DOI: 10.1007/978-3-663-02557-3_94
B. Wul
{"title":"Über den Durchschlag in p-n-Übergängen in Germanium","authors":"B. Wul","doi":"10.1007/978-3-663-02557-3_94","DOIUrl":"https://doi.org/10.1007/978-3-663-02557-3_94","url":null,"abstract":"","PeriodicalId":351690,"journal":{"name":"Halbleiter und Phosphore","volume":"57 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1958-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121973135","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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