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Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits最新文献

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Connection of Network and Device Simulation 网络连接与设备仿真
Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits Pub Date : 1990-06-03 DOI: 10.1109/NUPAD.1990.748283
P. Dickinger, P. Lindorfer, G. Nanz, S. Selberherr
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引用次数: 1
Merged Bipolar Transistor Models Including Substrate Current 合并双极晶体管模型，包括衬底电流
Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits Pub Date : 1990-06-03 DOI: 10.1109/NUPAD.1990.748281
S. Inohira, T. Shimni, H. Masuda, K. Iida
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引用次数: 1
Diffusion Simulation Using Boundary-fitted Coordinate Transformation 基于边界拟合坐标变换的扩散模拟
Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits Pub Date : 1990-06-03 DOI: 10.1109/NUPAD.1990.748286
N. Konishi, M. Nakamura, H. Amakawa
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引用次数: 0
Modeling Of Minority Carrier Mobility And Dopant-dependent Bandgap Narrowing For Accurate Device Simulation 少数载流子迁移率的建模和依赖于掺杂剂的带隙缩小，用于精确的器件仿真
Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits Pub Date : 1990-06-03 DOI: 10.1109/NUPAD.1990.748278
N. Shigyo, H. Tanimoto, M. Norishima, S. Yasuda
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引用次数: 0
Adaptive Mesh Refinement For Multilayer Process Simulation 多层过程模拟的自适应网格细化
Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits Pub Date : 1990-06-03 DOI: 10.1109/NUPAD.1990.748290
B. Baccus, D. Collard, E. Dubois
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引用次数: 0
A Boundary-Element/Multipole Algorithm for Self-Consistent Poisson Calculations in Monte-Carlo Simulation 蒙特卡罗模拟中自洽泊松计算的边界元/多极算法
Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits Pub Date : 1990-06-03 DOI: 10.1109/NUPAD.1990.748287
J. Lloyd, J. Phillips, J. White
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引用次数: 0
A Comprehensive Model Of Inversion Layer Hole Mobility For Simulation Of Submicron Mosfets 用于亚微米mosfet模拟的反转层空穴迁移率综合模型
Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits Pub Date : 1990-06-03 DOI: 10.1109/NUPAD.1990.748266
V. Agostinelli, H. Shin, A. Tasch
{"title":"A Comprehensive Model Of Inversion Layer Hole Mobility For Simulation Of Submicron Mosfets","authors":"V. Agostinelli, H. Shin, A. Tasch","doi":"10.1109/NUPAD.1990.748266","DOIUrl":"https://doi.org/10.1109/NUPAD.1990.748266","url":null,"abstract":"","PeriodicalId":348970,"journal":{"name":"Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133833555","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Faster Device Modeling using Adaptive Spatial Meshes and Continuation 更快的设备建模使用自适应空间网格和延续
Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits Pub Date : 1990-06-03 DOI: 10.1109/NUPAD.1990.748289
W. M. Coughran
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引用次数: 6
Rta-simulations With the 2-d Process Simulator Promis rta -simulation With 2-d Process Simulator promises
Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits Pub Date : 1990-06-03 DOI: 10.1109/NUPAD.1990.748253
G. Hobler, S. Halania, K. Wimmer, S. Selberherr, H. Potzl
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引用次数: 10
A Comparison of Algorithms for, Large-Scale Device Simulation 大规模器件仿真的算法比较
Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits Pub Date : 1990-06-03 DOI: 10.1109/NUPAD.1990.748261
G. Heiser, C. Pommerell, J. Weis, M. Annaratone, W. Fichtner
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引用次数: 2
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