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Modeling Of Minority Carrier Mobility And Dopant-dependent Bandgap Narrowing For Accurate Device Simulation

Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits Pub Date : 1990-06-03 DOI:10.1109/NUPAD.1990.748278
N. Shigyo, H. Tanimoto, M. Norishima, S. Yasuda
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少数载流子迁移率的建模和依赖于掺杂剂的带隙缩小，用于精确的器件仿真
本文章由计算机程序翻译，如有差异，请以英文原文为准。
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Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits
Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits
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