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A Nonlinear Drain Resistance pHEMT model for Millimeter-wave High Power Amplifiers 毫米波大功率放大器的非线性漏极电阻pHEMT模型
2008 European Microwave Integrated Circuit Conference Pub Date : 2008-10-01 DOI: 10.1109/EMICC.2008.4772284
A. Inoue, H. Amasuga, S. Goto, M. Miyazaki
{"title":"A Nonlinear Drain Resistance pHEMT model for Millimeter-wave High Power Amplifiers","authors":"A. Inoue, H. Amasuga, S. Goto, M. Miyazaki","doi":"10.1109/EMICC.2008.4772284","DOIUrl":"https://doi.org/10.1109/EMICC.2008.4772284","url":null,"abstract":"A high power pHEMT with longer drain-gate separation can operate at higher voltage. However, it shows large output power loss at millimeter-wave in addition to the conventional parasitic power dissipation. The nonlinear drain resistance Rd of the pHEMT is found to cause the large power loss, although it behaves as a conventional resistor at low frequency. The nonlinearity of the Rd is modeled and shows good agreement with the measurement. Comparisons of pHEMTs with different nonlinear Rd also support the model.","PeriodicalId":344657,"journal":{"name":"2008 European Microwave Integrated Circuit Conference","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133209061","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Gate Width Dependence of Noise Parameters and Scalable Noise Model for HEMTs hemt噪声参数的门宽依赖性及可扩展噪声模型
2008 European Microwave Integrated Circuit Conference Pub Date : 2008-10-01 DOI: 10.1109/EMICC.2008.4772288
Yu Zhu, Cejun Wei, O. Klimashov, Binghui Li, C. Zhang, Y. Tkachenko
{"title":"Gate Width Dependence of Noise Parameters and Scalable Noise Model for HEMTs","authors":"Yu Zhu, Cejun Wei, O. Klimashov, Binghui Li, C. Zhang, Y. Tkachenko","doi":"10.1109/EMICC.2008.4772288","DOIUrl":"https://doi.org/10.1109/EMICC.2008.4772288","url":null,"abstract":"Explicit expressions describing the gate width dependences of HEMTs noise parameters have been obtained experimentally. The minimum noise figure and optimum source admittance are proportional to gate width, and noise resistance is inversely proportional to gate width. A scalable noise model is then developed, which accurately predicates noise parameters in a broad gate width range. The scalable noise model can be attached to any nonlinear signal model to predicate both noise and nonlinear signal responses.","PeriodicalId":344657,"journal":{"name":"2008 European Microwave Integrated Circuit Conference","volume":"65 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127073755","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
An Integrated IQ Demodulator with Integrated Low-Power Multi-Gigabit BPSK / ASK Analog Signal Processor in 90nm CMOS 集成IQ解调器与集成低功耗多千兆BPSK / ASK模拟信号处理器在90纳米CMOS
2008 European Microwave Integrated Circuit Conference Pub Date : 2008-10-01 DOI: 10.1109/EMICC.2008.4772248
D. Yeh, S. Sarkar, S. Pinel, Procheta Sen, J. Laskar
{"title":"An Integrated IQ Demodulator with Integrated Low-Power Multi-Gigabit BPSK / ASK Analog Signal Processor in 90nm CMOS","authors":"D. Yeh, S. Sarkar, S. Pinel, Procheta Sen, J. Laskar","doi":"10.1109/EMICC.2008.4772248","DOIUrl":"https://doi.org/10.1109/EMICC.2008.4772248","url":null,"abstract":"In this paper, two integrated low-power broadband 90 nm-CMOS analog solutions are demonstrated to demodulate the multi-gigabit BPSK/ASK signal up to 3 Gbps. In the coherent BPSK mode, a transmission speed over 2.5 Gbps is achievable with a carrier frequency range of 8.5-9.5 GHz for a total DC power consumption of 73 mW with more than 20 dB conversion gain. A minimum sensitivity of -35 dBm is demonstrated for this demodulator with 33 dB dynamic range. In the non-coherent ASK mode, a transmission speed over 3 Gbps is achieved for a carrier frequency range of 6-9 GHz at DC power consumption of 32 mW. A minimum sensitivity of -26 dBm is demonstrated for the demodulator with 21 dB dynamic range. This is the best trade-off in terms of data rate and power consumption of CMOS demodulators reported at around 10 GHz carrier frequencies.","PeriodicalId":344657,"journal":{"name":"2008 European Microwave Integrated Circuit Conference","volume":"87 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115059712","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
Silicon-Germanium for Phased Array Radars 相控阵雷达用硅锗
2008 European Microwave Integrated Circuit Conference Pub Date : 2008-10-01 DOI: 10.1109/EMICC.2008.4772280
H. Berg, H. Thiesies, E. Hemmendorff, Georgios Sidiropoulos, J. Hedman
{"title":"Silicon-Germanium for Phased Array Radars","authors":"H. Berg, H. Thiesies, E. Hemmendorff, Georgios Sidiropoulos, J. Hedman","doi":"10.1109/EMICC.2008.4772280","DOIUrl":"https://doi.org/10.1109/EMICC.2008.4772280","url":null,"abstract":"Phase and amplitude controlling ICs realized in a low cost standard silicon process are demonstrated. The design of several ICs at S-, C- and X-band has shown that silicon germanium is a strong contender to gallium arsenide where lowest noise figure is not vital. This applies also to the T/R-modules suited for military AESA-radars. The circuits presented in this paper are manufactured by austriamicrosystems in their 0.35 mum SiGe-BiCMOS process with an fT of 70 GHz.","PeriodicalId":344657,"journal":{"name":"2008 European Microwave Integrated Circuit Conference","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116978403","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
60 GHz Frequency Conversion 90 nm CMOS Circuits 60 GHz变频90纳米CMOS电路
2008 European Microwave Integrated Circuit Conference Pub Date : 2008-10-01 DOI: 10.1109/EMICC.2008.4772228
M. Kantanen, J. Holmberg, T. Karttaavi, J. Volotinen
{"title":"60 GHz Frequency Conversion 90 nm CMOS Circuits","authors":"M. Kantanen, J. Holmberg, T. Karttaavi, J. Volotinen","doi":"10.1109/EMICC.2008.4772228","DOIUrl":"https://doi.org/10.1109/EMICC.2008.4772228","url":null,"abstract":"This paper presents design and a characterisation of an active single-stage single-ended 30 to 60 GHz frequency doubler and a resistive down conversion mixer with differential buffer stage. These MMICs are realised using 90-nm CMOS process. The doubler exhibit 7.1 dB conversion loss and 10.8 dB fundamental frequency suppression with 0 dBm input power and 13.7 mW power consumption. Maximum output power of -4.2 dBm is achieved with 5 dBm input power. The mixer has 9.8 dB conversion gain with +5 dBm local oscillator level. The compression point P1dB is -2 dBm with 14 mW power consumption.","PeriodicalId":344657,"journal":{"name":"2008 European Microwave Integrated Circuit Conference","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124058938","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
A 0.13-μm SiGe BiCMOS LNA for 24-GHz automotive short-range radar 用于24 ghz汽车近程雷达的0.13 μm SiGe BiCMOS LNA
2008 European Microwave Integrated Circuit Conference Pub Date : 2008-10-01 DOI: 10.1109/EMICC.2008.4772341
E. Ragonese, A. Scuderi, G. Palmisano
{"title":"A 0.13-μm SiGe BiCMOS LNA for 24-GHz automotive short-range radar","authors":"E. Ragonese, A. Scuderi, G. Palmisano","doi":"10.1109/EMICC.2008.4772341","DOIUrl":"https://doi.org/10.1109/EMICC.2008.4772341","url":null,"abstract":"In this paper a 24-GHz low-noise amplifier for automotive short-range radar applications is presented. The circuit was fabricated in a 0.13-μm SiGe BiCMOS process and includes three fully differential transformer-loaded cascode stages with variable gain functionality. The amplifier provides an outstanding power gain of 35 dB and a noise figure as low as 3.4 dB, exhibiting a reverse isolation better than -60 dB. The circuit guarantees an input 1-dB compression point of -12 dBm, while drawing 56 mA from a 2.4-V supply.","PeriodicalId":344657,"journal":{"name":"2008 European Microwave Integrated Circuit Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130806317","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Widebandgap Semiconductor HFET Models for Microwave CAD 微波CAD中宽带隙半导体HFET模型
2008 European Microwave Integrated Circuit Conference Pub Date : 2008-10-01 DOI: 10.1109/EMICC.2008.4772285
R. Trew, W. Kuang, Y. Liu, G. Bilbro
{"title":"Widebandgap Semiconductor HFET Models for Microwave CAD","authors":"R. Trew, W. Kuang, Y. Liu, G. Bilbro","doi":"10.1109/EMICC.2008.4772285","DOIUrl":"https://doi.org/10.1109/EMICC.2008.4772285","url":null,"abstract":"Physics-based device models integrated into harmonic-balance microwave CAD simulators add flexibility and the ability to investigate both device and circuit design parameters before fabrication and prototyping. Accurate formulation of these models requires that relevant physical phenomena affecting the performance of these devices be identified and suitable models developed. In this work it is shown that inclusion of space-charge induced source resistance, RF channel breakdown, and gate tunnel leakage and surface conduction in AlGaN/GaN HFETs produce a simulator that produces excellent agreement between simulated and measured data for amplifiers fabricated with these devices. This type of simulator is very useful for advanced optimization investigations.","PeriodicalId":344657,"journal":{"name":"2008 European Microwave Integrated Circuit Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130289237","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
The Fundamental Design Approach of The RF-DC Conversion Circuit for Optimizing Its Characteristics 优化RF-DC转换电路特性的基本设计方法
2008 European Microwave Integrated Circuit Conference Pub Date : 2008-10-01 DOI: 10.1109/EMICC.2008.4772306
T. Yamamoto, K. Fujimori, M. Sanagi, S. Nogi
{"title":"The Fundamental Design Approach of The RF-DC Conversion Circuit for Optimizing Its Characteristics","authors":"T. Yamamoto, K. Fujimori, M. Sanagi, S. Nogi","doi":"10.1109/EMICC.2008.4772306","DOIUrl":"https://doi.org/10.1109/EMICC.2008.4772306","url":null,"abstract":"A Rectifying Antenna (Rectenna) is one of the most important components for a wireless power transmission. It has been developed for many applications such as Space Solar Power System (SSPS), Radio Frequency IDentification (RF-ID), and electric vehicle etc. The Rectenna consisting of RF-DC conversion circuits and receiving antennas needs to be designed for high conversion efficiency to achieve efficient power transmission. In this paper, we investigated the RF-DC conversion circuits by the theoretical analysis. And, we propose the theoretical formula for calculating the output DC voltage in giving the input voltage. The result that is calculated by the formula agreed with the simulator's result, so, we confirmed the validity of the formula we derived. The theory and the formula we derived are useful in order to know the basic operation of the RF-DC conversion circuit, and to design the circuit efficiently.","PeriodicalId":344657,"journal":{"name":"2008 European Microwave Integrated Circuit Conference","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126909655","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Innovative and Complete Dummy Filling Strategy for RF Inductors Integrated in an Advanced Copper BEOL 集成在先进铜BEOL中的射频电感器的创新和完整假体填充策略
2008 European Microwave Integrated Circuit Conference Pub Date : 2008-10-01 DOI: 10.1109/EMICC.2008.4772223
C. Pastore, F. Gianesello, D. Gloria, Emmanuelle Serret, P. Benech
{"title":"Innovative and Complete Dummy Filling Strategy for RF Inductors Integrated in an Advanced Copper BEOL","authors":"C. Pastore, F. Gianesello, D. Gloria, Emmanuelle Serret, P. Benech","doi":"10.1109/EMICC.2008.4772223","DOIUrl":"https://doi.org/10.1109/EMICC.2008.4772223","url":null,"abstract":"A complete strategy to manage dummy fills inside and underneath a large spectrum of integrated RF inductors realized in a 0.13 mum CMOS technology using a Damascene Copper Back End of Line (BEOL) is presented here. The main motivation of this paper is first to evaluate through a Design Of Experiment (DOE) modeling, the impact on RF inductor performances of dummy fills inserted inside or underneath the coils, and then determine the right metal fill density to insert to be compliant with Digital metal density rules without degrading their electrical performances.","PeriodicalId":344657,"journal":{"name":"2008 European Microwave Integrated Circuit Conference","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123022999","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Tapped integrated inductors: Modelling and Application in Multi-Band RF Circuits 抽头集成电感:建模及其在多频带射频电路中的应用
2008 European Microwave Integrated Circuit Conference Pub Date : 2008-10-01 DOI: 10.1109/EMICC.2008.4772272
M. Dehan, J. Borremans, P. Wambacq, S. Decoutere
{"title":"Tapped integrated inductors: Modelling and Application in Multi-Band RF Circuits","authors":"M. Dehan, J. Borremans, P. Wambacq, S. Decoutere","doi":"10.1109/EMICC.2008.4772272","DOIUrl":"https://doi.org/10.1109/EMICC.2008.4772272","url":null,"abstract":"As CMOS scales down and sees is cost per mm2 increasing, area-aware RF design solutions are called for. Integrated inductors with multiple taps allow for low-area multi-band RF circuit design. This work reports on the design of these inductors and provides modelling and extraction procedures demonstrated on 4-port measurements. Additionally, the application of such inductors is demonstrated on a low-area switchable dual-band VCO in 90 nm CMOS with an area of only 0.04 mm2. Dual-band operation around 3.5 and 10 GHz is achieved, with a high FOM of 182 dB. This performance demonstrates the opportunities using tapped inductors for high-performance area-aware RF design.","PeriodicalId":344657,"journal":{"name":"2008 European Microwave Integrated Circuit Conference","volume":"126 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115263300","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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